| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A low-power, high-frequency, all-NMOS all-current-mirror sinusoidal quadrature oscillator
|
Leelasantitham, A.
|
|
|
35 |
9 |
p. 713-721
|
artikel
|
| 2 |
A new small-signal MOSFET model and parameter extraction method for RF IC's application
|
Chang, Kow-Ming
|
|
|
35 |
9 |
p. 749-759
|
artikel
|
| 3 |
Body ballast resistor enhances ESD robustness of deep sub-micron CMOS circuit
|
Wem Lee, Jam
|
|
|
35 |
9 |
p. 783-788
|
artikel
|
| 4 |
Computational study of variations in gap size for the electrostatic levitating force of MEMS device using dual BEM
|
Chyuan, Shiang-Woei
|
|
|
35 |
9 |
p. 739-748
|
artikel
|
| 5 |
Design and analysis of planar printed microwave and PBG filters using an FDTD method
|
Tong, Ming-Sze
|
|
|
35 |
9 |
p. 777-781
|
artikel
|
| 6 |
Diamond icosahedron on a TiN-coated steel substrate
|
Breza, J.
|
|
|
35 |
9 |
p. 709-712
|
artikel
|
| 7 |
Dielectric properties in Au/SnO2/n-Si (MOS) structures irradiated under 60Co-γ rays
|
Tuğluoğlu, N
|
|
|
35 |
9 |
p. 731-738
|
artikel
|
| 8 |
Editorial board
|
|
|
|
35 |
9 |
p. i
|
artikel
|
| 9 |
Effects of temperature and aperture size on nanojet ejection process by molecular dynamics simulation
|
Fang, Te-Hua
|
|
|
35 |
9 |
p. 687-691
|
artikel
|
| 10 |
High-voltage NMOS design in fully implanted twin-well CMOS
|
Santos, P.M
|
|
|
35 |
9 |
p. 723-730
|
artikel
|
| 11 |
Impact of barrier deposition process on electrical and reliability performance of Cu/CVD low k SiOCH metallization
|
Tsang, C.F.
|
|
|
35 |
9 |
p. 693-700
|
artikel
|
| 12 |
Investigation of the novel attributes of a single-halo double gate SOI MOSFET: 2D simulation study
|
Reddy, G.Venkateshwar
|
|
|
35 |
9 |
p. 761-765
|
artikel
|
| 13 |
Mechanisms of nanooxidation of Si(100) from atomic force microscopy
|
Fang, Te-Hua
|
|
|
35 |
9 |
p. 701-707
|
artikel
|
| 14 |
Systematic design of the pipelined analog-to-digital converter with radix<2
|
Nejati, Babak
|
|
|
35 |
9 |
p. 767-776
|
artikel
|
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