| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A physical-based noise macromodel for fast simulation of switching noise generation
|
Elvira, Luis
|
|
|
35 |
8 |
p. 677-684
|
artikel
|
| 2 |
A signal processing ASIC for ISFET-based chemical sensors
|
Chung, Wen-Yaw
|
|
|
35 |
8 |
p. 667-675
|
artikel
|
| 3 |
Comparative analysis of the DC performance of DG MOSFETs on highly-doped and near-intrinsic silicon layers
|
Jankovic, Nebojsa D
|
|
|
35 |
8 |
p. 647-653
|
artikel
|
| 4 |
Editorial board
|
|
|
|
35 |
8 |
p. i
|
artikel
|
| 5 |
Electronic structures of high-k transition metal silicates: first-principles calculations
|
Samantaray, C.B
|
|
|
35 |
8 |
p. 655-658
|
artikel
|
| 6 |
Epitaxy of Nanostructures
|
Henini, M
|
|
|
35 |
8 |
p. 685
|
artikel
|
| 7 |
IGBT gate driver IC with full-bridge output stage using a modified standard CMOS process
|
Pérez-Tomás, A
|
|
|
35 |
8 |
p. 659-666
|
artikel
|
| 8 |
Investigation of manufacturing variations of planar InP/InGaAs avalanche photodiodes for optical receivers
|
Lee, Bongyong
|
|
|
35 |
8 |
p. 635-640
|
artikel
|
| 9 |
Semiconductors: Data Handbook
|
Henini, M
|
|
|
35 |
8 |
p. 685
|
artikel
|
| 10 |
Size dependence saturation and absorption of PbS quantum dots
|
Kang, K
|
|
|
35 |
8 |
p. 629-633
|
artikel
|
| 11 |
Study of asymmetrical effects of silicon submicron transistors
|
Uddin, Ashraf
|
|
|
35 |
8 |
p. 641-645
|
artikel
|
| 12 |
X-ray Scattering from Semiconductors (2nd Edition)
|
Henini, M
|
|
|
35 |
8 |
p. 685-686
|
artikel
|
Tijdschrift beschrijving