| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Advanced power semiconductors and ICs for DC/DC converter applications
|
Kinzer, Dan
|
|
|
35 |
3 |
p. 225-233
|
artikel
|
| 2 |
Advances in power semiconductor devices
|
Benda, Vitezslav
|
|
|
35 |
3 |
p. 223
|
artikel
|
| 3 |
A new triggering mode in a vertical bi-directional MOS-thyristor device
|
Bourennane, A.
|
|
|
35 |
3 |
p. 277-285
|
artikel
|
| 4 |
A novel double RESURF LDMOS for HVIC's
|
Hardikar, S.
|
|
|
35 |
3 |
p. 305-310
|
artikel
|
| 5 |
Axial lifetime control in silicon power diodes by irradiation with protons, alphas, low- and high-energy electrons
|
Hazdra, P.
|
|
|
35 |
3 |
p. 249-257
|
artikel
|
| 6 |
Design considerations for 6.5 kV IGBT devices
|
Vellvehı́, M.
|
|
|
35 |
3 |
p. 269-275
|
artikel
|
| 7 |
Editorial Board
|
|
|
|
35 |
3 |
p. i
|
artikel
|
| 8 |
High voltage amorphous silicon TFT for use in large area applications
|
Karim, K.S.
|
|
|
35 |
3 |
p. 311-315
|
artikel
|
| 9 |
High-voltage lateral trench gate SOI-LDMOSFETs
|
Park, J.M.
|
|
|
35 |
3 |
p. 299-304
|
artikel
|
| 10 |
Optimum design for minimum on-resistance of low voltage trench power MOSFET
|
Hong, Ji-Hoon
|
|
|
35 |
3 |
p. 287-289
|
artikel
|
| 11 |
Possibilities and limits of axial lifetime control by radiation induced centers in fast recovery diodes
|
Siemieniec, Ralf
|
|
|
35 |
3 |
p. 259-267
|
artikel
|
| 12 |
Progress in MOS-controlled bipolar devices and edge termination technologies
|
Sankara Narayanan, E.M.
|
|
|
35 |
3 |
p. 235-248
|
artikel
|
| 13 |
Thin-film silicon-on-sapphire LDMOS structures for RF power amplifier applications
|
Roig, J.
|
|
|
35 |
3 |
p. 291-297
|
artikel
|
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