nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Advanced power semiconductors and ICs for DC/DC converter applications
|
Kinzer, Dan |
|
|
35 |
3 |
p. 225-233 |
artikel |
2 |
Advances in power semiconductor devices
|
Benda, Vitezslav |
|
|
35 |
3 |
p. 223 |
artikel |
3 |
A new triggering mode in a vertical bi-directional MOS-thyristor device
|
Bourennane, A. |
|
|
35 |
3 |
p. 277-285 |
artikel |
4 |
A novel double RESURF LDMOS for HVIC's
|
Hardikar, S. |
|
|
35 |
3 |
p. 305-310 |
artikel |
5 |
Axial lifetime control in silicon power diodes by irradiation with protons, alphas, low- and high-energy electrons
|
Hazdra, P. |
|
|
35 |
3 |
p. 249-257 |
artikel |
6 |
Design considerations for 6.5 kV IGBT devices
|
Vellvehı́, M. |
|
|
35 |
3 |
p. 269-275 |
artikel |
7 |
Editorial Board
|
|
|
|
35 |
3 |
p. i |
artikel |
8 |
High voltage amorphous silicon TFT for use in large area applications
|
Karim, K.S. |
|
|
35 |
3 |
p. 311-315 |
artikel |
9 |
High-voltage lateral trench gate SOI-LDMOSFETs
|
Park, J.M. |
|
|
35 |
3 |
p. 299-304 |
artikel |
10 |
Optimum design for minimum on-resistance of low voltage trench power MOSFET
|
Hong, Ji-Hoon |
|
|
35 |
3 |
p. 287-289 |
artikel |
11 |
Possibilities and limits of axial lifetime control by radiation induced centers in fast recovery diodes
|
Siemieniec, Ralf |
|
|
35 |
3 |
p. 259-267 |
artikel |
12 |
Progress in MOS-controlled bipolar devices and edge termination technologies
|
Sankara Narayanan, E.M. |
|
|
35 |
3 |
p. 235-248 |
artikel |
13 |
Thin-film silicon-on-sapphire LDMOS structures for RF power amplifier applications
|
Roig, J. |
|
|
35 |
3 |
p. 291-297 |
artikel |