| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Alloy broadening effect on optical properties of InGaAs grown by MOCVD with TMAs precursor
|
Hellara, J.
|
|
|
35 |
2 |
p. 207-212
|
artikel
|
| 2 |
A novel harmless trimming for micro-device with defects and particles in arbitrary geometry by fine milling of focused ion beam
|
Fu, Yongqi
|
|
|
35 |
2 |
p. 111-115
|
artikel
|
| 3 |
Applications of LIGA technology to precision manufacturing of high-aspect-ratio micro-components and -systems: a review
|
Malek, Chantal Khan
|
|
|
35 |
2 |
p. 131-143
|
artikel
|
| 4 |
Design and development of high-frequency thermoacoustic engines for thermal management in microelectronics
|
Symko, O.G.
|
|
|
35 |
2 |
p. 185-191
|
artikel
|
| 5 |
Design of a high speed parallel encoder for convolutional codes
|
Msir, A.
|
|
|
35 |
2 |
p. 151-166
|
artikel
|
| 6 |
Editorial Board
|
|
|
|
35 |
2 |
p. i
|
artikel
|
| 7 |
Modelling of binary phase modulation in surface stabilized ferroelectric liquid crystal spatial light modulators
|
Lee, Yongmin.
|
|
|
35 |
2 |
p. 193-201
|
artikel
|
| 8 |
Monolithic integration of thin film μ-heater array with 4-channel WDM transmitter
|
Ryu, Sang-Wan
|
|
|
35 |
2 |
p. 203-206
|
artikel
|
| 9 |
On the simulation of the formation and dissolution of silicon self-interstitial clusters and the corresponding inverse modeling problem
|
Heitzinger, Clemens
|
|
|
35 |
2 |
p. 167-171
|
artikel
|
| 10 |
PatentsALERT
|
|
|
|
35 |
2 |
p. 213-221
|
artikel
|
| 11 |
Properties of wurtzite GaN MESFETs studied by two-dimensional full band Monte Carlo approach
|
Guo, Baozeng
|
|
|
35 |
2 |
p. 117-123
|
artikel
|
| 12 |
Simulation and comparison of MOS inversion layer quantum mechanics effects in SiGe PMOSFET and Si PMOSFET
|
Rong, Yang
|
|
|
35 |
2 |
p. 145-149
|
artikel
|
| 13 |
Single-electron winner-take-all network
|
Guimarães, J.G.
|
|
|
35 |
2 |
p. 173-178
|
artikel
|
| 14 |
Study of GaAs layers grown on Ge substrates by MOVPE and in situ monitored by laser reflectometry
|
Rebey, A
|
|
|
35 |
2 |
p. 179-184
|
artikel
|
| 15 |
Study of the long-wavelength optic phonons in AlGaInP and AlGaInAs
|
Chen, Lianhui
|
|
|
35 |
2 |
p. 125-130
|
artikel
|
| 16 |
The absorption coefficient of low dimensional semiconductor systems: the photoluminescence of InGaN quantum dot
|
Rodrı́guez-Coppola, H.
|
|
|
35 |
2 |
p. 103-110
|
artikel
|
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