| no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
| 1 |
A counter-based pseudo-exhaustive pattern generator for BIST applications
|
Voyiatzis, I.
|
|
|
35 |
11 |
p. 927-935
|
article
|
| 2 |
A method for deep etching in dielectric films for 3D-chip and photonics applications
|
Ramana Murthy, B.
|
|
|
35 |
11 |
p. 909-913
|
article
|
| 3 |
Analysis of instability line width and white wall created by the photolithography process
|
Kuo, Yang-Kuao
|
|
|
35 |
11 |
p. 915-922
|
article
|
| 4 |
Comparative study between electrical, optical and structural properties of annealed heavily carbon doped GaAs
|
Rebey, A.
|
|
|
35 |
11 |
p. 875-880
|
article
|
| 5 |
Corrigendum to “An overview of standards in electromagnetic compatibility for integrated circuits” [Microelectronics 35 (2004) 487–495]
|
Carlton, Ross M.
|
|
|
35 |
11 |
p. 937
|
article
|
| 6 |
Editorial board
|
|
|
|
35 |
11 |
p. i
|
article
|
| 7 |
Implementation of non-linear filters using nanoelectronic single-electron circuitry
|
Kafantaris, D.
|
|
|
35 |
11 |
p. 881-889
|
article
|
| 8 |
Pass-transistor based implementations of threshold logic gates for WOS filtering
|
Avedillo, María J.
|
|
|
35 |
11 |
p. 869-873
|
article
|
| 9 |
Performance comparison of state-of-the-art heterojunction bipolar devices (HBT) based on AlGaAs/GaAs, Si/SiGe and InGaAs/InP
|
Esame, Onur
|
|
|
35 |
11 |
p. 901-908
|
article
|
| 10 |
Self-aligned In0.49Ga0.51P/GaAs HBT DC and RF characteristics related with orientations
|
Shi, Ruiying
|
|
|
35 |
11 |
p. 923-925
|
article
|
| 11 |
Self-organized InAs/GaAs quantum dots multilayers with growth interruption emitting at 1.3μm
|
Bouzaïene, L.
|
|
|
35 |
11 |
p. 897-900
|
article
|
| 12 |
Structural and optical characterization of GaN grown on porous silicon substrate by MOVPE
|
Chaaben, N.
|
|
|
35 |
11 |
p. 891-895
|
article
|
Journal description