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                             106 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 AFM studies of polyaniline nanofilms irradiated with gamma rays Laranjeira, J.M.G.

34 5-8 p. 511-513
artikel
2 An analytic model for breakdown voltage of gated diodes Han, S.K.

34 5-8 p. 525-527
artikel
3 A new type of quantum wells: stacking faults in silicon carbide Iwata, Hisaomi

34 5-8 p. 371-374
artikel
4 Atomic and electronic structures of In x Ga1−x N quantum dots de Oliveira, C.

34 5-8 p. 725-727
artikel
5 Atomic force microscopy and optical characterization of PbS quantum dots grown in glass matrix Silva, R.S.

34 5-8 p. 647-649
artikel
6 Atomistic description of the electronic structure of T-shaped quantum wires Aizpurua, J.

34 5-8 p. 603-606
artikel
7 ‘Atomistic’ simulation of ultra-submicron MESFETs Vaz, K.F.

34 5-8 p. 599-602
artikel
8 BaFe12O19 thin film grown by an aqueous sol–gel process Santos, J.V.A

34 5-8 p. 565-567
artikel
9 Band structure anisotropy effects on the hole transport transient in 4H–SiC Flores, M.Z.S

34 5-8 p. 717-719
artikel
10 Boltzmann transport equation based supply function for tunnelling from inversion layers Vercik, A.

34 5-8 p. 533-535
artikel
11 Breakdown voltage and on-resistance of multi-RESURF LDMOS Choi, E.K.

34 5-8 p. 683-686
artikel
12 Calculations of the inter-subband scattering rates of electrons in GaAs/AlGaAs quantum wells Lee, H.C.

34 5-8 p. 671-673
artikel
13 Challenges in the implementation of Nanoelectronics Tsu, Raphael

34 5-8 p. 329-332
artikel
14 Co-dot-array formation along scratches on Si(111) surface by electroless deposition Kim, Changman

34 5-8 p. 607-609
artikel
15 Confined excitons in Si/SrTiO3 quantum wells Pereira, T.A.S.

34 5-8 p. 507-509
artikel
16 Controllable growth of semiconductor nanometer structures Wang, Z.G

34 5-8 p. 379-382
artikel
17 Correlation energy of coupled double electron layers Cândido, L.

34 5-8 p. 569-570
artikel
18 Coupled quantum dots: effect of inter-dot interactions Apel, V.M.

34 5-8 p. 729-731
artikel
19 Coupled rate equation modeling of self-assembled quantum dot photoluminescence de Sales, F.V.

34 5-8 p. 705-707
artikel
20 Cross-sectional Scanning Probe Microscopy of GaN-based p–n heterostructures da Silva, M.I.N.

34 5-8 p. 571-573
artikel
21 DC field response of hot carriers under circular polarized intense microwave fields in semiconductors limited to two-dimension Ishida, Norihisa

34 5-8 p. 691-693
artikel
22 Design of microsensor for gases and liquids flow measurements Rodrigues, R.J.

34 5-8 p. 709-711
artikel
23 Different aspect ratio pyramidal tips obtained by wet etching of (100) and (111) silicon Resnik, D.

34 5-8 p. 591-593
artikel
24 Dynamical and thermodynamic properties of III-nitrides Pereira, L.S.

34 5-8 p. 655-657
artikel
25 Editorial Board
34 5-8 p. i
artikel
26 Effects of a perturbative spike in open quantum dots: suppression of the conductance and discreet states imaging Mendoza, M.

34 5-8 p. 499-502
artikel
27 Effects of growth interruption during the formation of InAs/GaAs self-assembled quantum dots grown by molecular beam epitaxy Iizuka, K.

34 5-8 p. 611-613
artikel
28 Electrical characterization of InGaN quantum well p–n heterostructures González, J.C.

34 5-8 p. 455-457
artikel
29 Electric-field and space-charge distributions in InAs/GaAs quantum-dot infrared photodetectors: ensemble Monte Carlo particle modeling Ryzhii, M.

34 5-8 p. 411-414
artikel
30 Electron emission from nanostructures Huq, S.E

34 5-8 p. 401-404
artikel
31 Electronic and magnetic properties of iron chains on carbon nanotubes Fagan, Solange B.

34 5-8 p. 481-484
artikel
32 Electronic anisotropy of the GaAs(001) surface studied by energy loss spectroscopy Balzarotti, A.

34 5-8 p. 595-597
artikel
33 Electronic properties of BN nanocones under electric fields Machado, M.

34 5-8 p. 545-547
artikel
34 Electronic spectrum of two coupled semiconductor quantum disks under external fields Muñoz, E.

34 5-8 p. 733-736
artikel
35 Electrorefractive properties of modified five-layer asymmetric coupled quantum well (FACQW) Arakawa, T

34 5-8 p. 387-390
artikel
36 Evolution of the two-dimensional towards three-dimensional Landau states in wide parabolic quantum well Sergio, C.S.

34 5-8 p. 763-766
artikel
37 Fabrication and characterization of boron-related nanowires Wu, J.Z.

34 5-8 p. 463-470
artikel
38 Formation dynamics of neutral and negatively charged excitons in double barrier resonant tunnelling structures Vercik, A.

34 5-8 p. 659-661
artikel
39 Formation of III–V low dimensional structures and their applications to intelligent quantum chips Hasegawa, Hideki

34 5-8 p. 341-345
artikel
40 Formation of Si/SiO x interface and its influence on photoluminescence of Si nano-crystallites Becerril-Espinoza, F.G.

34 5-8 p. 759-761
artikel
41 Gate dielectrics for Si, SiC, and GaN as synthesized by jet vapor deposition Ma, T.P.

34 5-8 p. 363-370
artikel
42 Generation and characterization of polymeric tridimensional microstructures for micromachine application Mousinho, A.P.

34 5-8 p. 651-653
artikel
43 Growth and quality control of MBE-based SiGe-HBT for amplifier applications Liu, Daoguang

34 5-8 p. 587-589
artikel
44 H-band emission in single heterojunctions Qu, Fanyao

34 5-8 p. 755-757
artikel
45 High density plasma chemical vapor deposition of diamond-like carbon films Mousinho, A.P.

34 5-8 p. 627-629
artikel
46 High performance quantum cascade lasers at λ∼6μm Razeghi, M.

34 5-8 p. 383-385
artikel
47 High power lasers based on submonolayer InAs–GaAs quantum dots and InGaAs quantum wells Kovsh, A.R

34 5-8 p. 491-493
artikel
48 Hybrid and effective satellites for studying superlattices Morelhão, S.L.

34 5-8 p. 695-699
artikel
49 Impurity binding energies in semiconductor Fibonacci superlattices Vasconcelos, M.S.

34 5-8 p. 503-505
artikel
50 Incorporation of carrier capture and escape processes into a self-consistent cw model for Quantum Well lasers Borruel, L.

34 5-8 p. 675-677
artikel
51 Influence of crystals distribution on the photoluminescence properties of nanocrystalline silicon thin films Cerqueira, M.F.

34 5-8 p. 375-378
artikel
52 Influence of nitrogen on carrier localization in InGaAsN/GaAs single quantum wells Misiewicz, J.

34 5-8 p. 737-739
artikel
53 Introduction to the low dimensional structures and devices conference (LDSD'2002) Fortaleza, Brazil: December 8–13, 2002 Henini, Mohamed

34 5-8 p. 321-322
artikel
54 Investigation of electronic properties of space-charge quantum wires Marletta, A.

34 5-8 p. 663-665
artikel
55 Large room temperature Rabi-splitting in II–VI semiconductor microcavity quantum structures Pawlis, A.

34 5-8 p. 439-442
artikel
56 Lateral confinement of carriers in ultrathin semiconductor quantum wells Shtinkov, N.

34 5-8 p. 459-462
artikel
57 Lateral p–n junctions for high-density LED arrays Vaccaro, Pablo O.

34 5-8 p. 355-357
artikel
58 Lattice dynamics in wide band gap materials based superlattices Lemos, V.

34 5-8 p. 395-399
artikel
59 Light emission from cubic InGaN nanostructures Lischka, K.

34 5-8 p. 427-433
artikel
60 Li x Mn2O4 thin films characterization by X-ray, electrical conductivity and XANES Meneses, C.T

34 5-8 p. 561-563
artikel
61 Low growth rate InAs/GaAs quantum dots for room-temperature luminescence over 1.3μm da Silva, M.J.

34 5-8 p. 631-633
artikel
62 Luminescence study of silicon nanostructures prepared by ion beam mixing Ovchinnikov, V

34 5-8 p. 579-581
artikel
63 Material and device issues of AlGaN/GaN HEMTs on silicon substrates Javorka, P.

34 5-8 p. 435-437
artikel
64 Morphological and optical properties of p-type GaAs(001) layers doped with silicon Lamas, T.E.

34 5-8 p. 701-703
artikel
65 Non-linear effects on the power dependent photocurrent of self-assembled InAs/GaAs quantum dots Monte, A.F.G.

34 5-8 p. 667-669
artikel
66 Optical spectra of quantum dot aggregates in sub-wetting layer region Král, K.

34 5-8 p. 583-585
artikel
67 p-HEMT with tailored field Mil'shtein, S

34 5-8 p. 359-361
artikel
68 Photoluminescence and optical absorption in CdS x Se1−x nanocrystals Mendes Junior, D.R.

34 5-8 p. 643-645
artikel
69 Photoluminescence of Ge nano-crystallites embedded in silicon oxide Torchynska, T.V.

34 5-8 p. 541-543
artikel
70 Photomodulation spectroscopy applied to low-dimensional semiconductor structures Misiewicz, J.

34 5-8 p. 351-353
artikel
71 Plasma etching of DLC films for microfluidic channels Massi, M.

34 5-8 p. 635-638
artikel
72 Plasmon–LO phonon interaction effects on the intrasubband and intersubband transition energies in a quantum well wire Borges, A.N.

34 5-8 p. 529-531
artikel
73 Proximity-induced superconductivity and its re-entrance effect in niobium/multi-walled carbon nanotube junctions Haruyama, J.

34 5-8 p. 537-539
artikel
74 Quantum dots: lasers and amplifiers Bimberg, Dieter

34 5-8 p. 323-328
artikel
75 Quantum sensing using Type II InAs/GaSb superlattice for infrared detection Razeghi, Manijeh

34 5-8 p. 405-410
artikel
76 Quasi-lateral 2DEG–2DHG junction in AlGaAs/GaAs Kaestner, B.

34 5-8 p. 423-425
artikel
77 Reliability physics study for semiconductor-polymer device development Teixeira, Dyanna G.D.

34 5-8 p. 713-715
artikel
78 Resonant tunneling diode circuits using Pspice Sellai, A.

34 5-8 p. 741-745
artikel
79 Role of the spin–orbit interaction in elastic scattering of electrons in quantum wells Huang, H.C.

34 5-8 p. 687-690
artikel
80 Second-harmonic generation in gallium nanoparticle monolayers across the solid-to-liquid phase transition Stella, A.

34 5-8 p. 619-621
artikel
81 Self-assembled quantum dots on GaAs for optoelectronic applications Henini, M.

34 5-8 p. 333-336
artikel
82 Si-based quantum staircase terahertz lasers Sun, G.

34 5-8 p. 391-393
artikel
83 Spectroscopy of different sites in Pr3+-doped oxyfluoride glass ceramics Wang, X.J.

34 5-8 p. 549-551
artikel
84 Spin-polarized transport in low-dimensional systems da Cunha Lima, I.C.

34 5-8 p. 475-480
artikel
85 Spin transport through quantum dots da Cunha Lima, A.T.

34 5-8 p. 337-339
artikel
86 Spintronics and exchange engineering in coupled quantum dots Leburton, Jean-Pierre

34 5-8 p. 485-489
artikel
87 Stochastic interpretation of the Wigner transport in nanostructures Nedjalkov, M.

34 5-8 p. 443-445
artikel
88 Structural study of the InAs quantum-dot nucleation on GaAs(001) Patella, F.

34 5-8 p. 419-422
artikel
89 Study of internal electric fields in AlGaAs/GaAs two-dimensional electron gas heterostructures Zamora-Peredo, L.

34 5-8 p. 521-523
artikel
90 Study of the misfit dislocations in semiconductor heterostructures by density functional TB molecular dynamics and path probability methods Masuda-Jindo, K.

34 5-8 p. 615-617
artikel
91 Study on the growth mechanism of Bi-2212 ribbon-like thin films on flat Ag substrate by the atomization technique Su, Y.J.

34 5-8 p. 679-681
artikel
92 The effects of external magnetic field on the surface charge distribution of spherical nanoparticles Qu, F.

34 5-8 p. 471-473
artikel
93 The effects of the nitrogen on the electrical and structural properties of the diamond-like carbon (DLC) films Guerino, M.

34 5-8 p. 639-641
artikel
94 The investigation of properties of electron transport in AlGaN/GaN heterostructures Danylyuk, S.V.

34 5-8 p. 575-577
artikel
95 Theoretical and practical research of the use of inductors for improving DLTS characterization of semiconductors Rangel-Kuoppa, Victor-Tapio

34 5-8 p. 751-753
artikel
96 Theoretical investigation of TiB2 nanotubes Guerini, S.

34 5-8 p. 495-497
artikel
97 Theoretical optical parameters for III-nitride semiconductors Silva Pinto, E.

34 5-8 p. 721-724
artikel
98 Theoretical studies of poly(para-phenylene vinylene) (PPV) and poly(para-phenylene) (PPP) De Carvalho, L.C.

34 5-8 p. 623-625
artikel
99 The peculiarities of mechanical bending of silicon wafers after diverse manufacturing operations Bidadi, H.

34 5-8 p. 515-519
artikel
100 Thermomechanical properties of the amorphous carbon nitride thin films Champi, A.

34 5-8 p. 553-555
artikel
101 Time-resolved measurements and spatial photoluminescence distribution in InAs/AlGaAs quantum dots Monte, A.F.G.

34 5-8 p. 747-749
artikel
102 Tunable InAs quantum-dot lasers grown on (100) InP Allen, C.Nı̀.

34 5-8 p. 415-417
artikel
103 Type-II quantum dots in magnetic fields: excitonic behaviour Janssens, K.L.

34 5-8 p. 347-350
artikel
104 Valley-fold and mountain-fold in the micro-origami technique Vaccaro, Pablo O.

34 5-8 p. 447-449
artikel
105 Vibrational spectra of adsorbed hydrogen on GaN(001) surfaces de Almeida, F.L.

34 5-8 p. 451-453
artikel
106 Yttria thin films doped with rare earth for applications in radiation detectors and thermoluminescent dosimeters Montes, P.J.R.

34 5-8 p. 557-559
artikel
                             106 gevonden resultaten
 
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