nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Analysis of the detectivity for triple-layer heterojunction GaSb/GaInAsSb infrared detectors
|
Yuan, Tian |
|
|
34 |
4 |
p. 305-312 |
artikel |
2 |
Analytical GTO turn-off model under snubberless turn-off condition
|
Li, Xuening |
|
|
34 |
4 |
p. 297-304 |
artikel |
3 |
A novel hydrodynamic model for nanoscale devices simulation
|
Liu, Enfeng |
|
|
34 |
4 |
p. 289-296 |
artikel |
4 |
A probabilistic approach to determine radiative recombination carrier lifetimes in quantum well solar cells
|
Rault, Francis K. |
|
|
34 |
4 |
p. 265-270 |
artikel |
5 |
Defocusing image to pattern contact holes using attenuated phase shift masks
|
Singh, Navab |
|
|
34 |
4 |
p. 237-245 |
artikel |
6 |
Design of a micromachined thermal accelerometer: thermal simulation and experimental results
|
Mailly, F. |
|
|
34 |
4 |
p. 275-280 |
artikel |
7 |
Editorial Board
|
|
|
|
34 |
4 |
p. i |
artikel |
8 |
Metal–insulator phase transition in vanadium oxides films
|
Golan, G. |
|
|
34 |
4 |
p. 255-258 |
artikel |
9 |
Microstructure study and hyper frequency electromagnetic characterization of novel hexagonal compounds
|
Zhang, Hongguo |
|
|
34 |
4 |
p. 281-287 |
artikel |
10 |
New photoluminescence lines in Vanadium doped GaAs grown by MOVPE
|
Bchetnia, A. |
|
|
34 |
4 |
p. 271-274 |
artikel |
11 |
PatentsALERT
|
|
|
|
34 |
4 |
p. 315-319 |
artikel |
12 |
Superheterodyne amplification of sub-millimeter electromagnetic waves in an n-GaAs film
|
Koshevaya, S. |
|
|
34 |
4 |
p. 231-235 |
artikel |
13 |
System-on-a-Chip: Design and Test
|
Stojcev, Mile |
|
|
34 |
4 |
p. 313-314 |
artikel |
14 |
Thickness dependent dielectric breakdown of PECVD low-k carbon doped silicon dioxide dielectric thin films: modeling and experiments
|
Zhou, H. |
|
|
34 |
4 |
p. 259-264 |
artikel |
15 |
Using microchannels to cool microprocessors: a transmission-line-matrix study
|
Belhardj, S. |
|
|
34 |
4 |
p. 247-253 |
artikel |