| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Built-in electric fields in InAs quantum dots grown on (N11) GaAs substrates
|
Sanguinetti, S.
|
|
|
33 |
7 |
p. 583-588
|
artikel
|
| 2 |
Characterisation of strained (111)B InGaAs/GaAs quantum well lasers with intracavity optical modulator
|
Fleischmann, T
|
|
|
33 |
7 |
p. 547-552
|
artikel
|
| 3 |
Germanium islands embedded in strained silicon quantum wells grown on patterned substrates
|
Beyer, A
|
|
|
33 |
7 |
p. 525-529
|
artikel
|
| 4 |
Molecular beam epitaxy of quantum wires and quantum dots on patterned high-index substrates
|
Nötzel, Richard
|
|
|
33 |
7 |
p. 573-578
|
artikel
|
| 5 |
Observation of the pyroelectric effect in strained piezoelectric InGaAs/GaAs quantum-wells grown on (111) GaAs substrates
|
Cho, S.
|
|
|
33 |
7 |
p. 531-534
|
artikel
|
| 6 |
Optical anisotropy and photoluminescence temperature dependence for self-assembled InAs quantum islands grown on vicinal (001) InP substrates
|
Salem, B
|
|
|
33 |
7 |
p. 579-582
|
artikel
|
| 7 |
Optical characterisation of Ge islands grown on Si(110)
|
Ferrandis, P
|
|
|
33 |
7 |
p. 541-546
|
artikel
|
| 8 |
Patents alert
|
|
|
|
33 |
7 |
p. 595-603
|
artikel
|
| 9 |
Piezoelectric effects in semiconductor heterostructures: applications and consequences
|
Le Thomas, N.
|
|
|
33 |
7 |
p. 565-571
|
artikel
|
| 10 |
Preface
|
Henini, Mohamed
|
|
|
33 |
7 |
p. 523
|
artikel
|
| 11 |
Raman study of GaAs quantum wires grown with partial filling of corrugated (311)A AlAs surfaces
|
Efremov, M.D.
|
|
|
33 |
7 |
p. 535-540
|
artikel
|
| 12 |
Relaxation study of AlGaAs cladding layers in InGaAs/GaAs (111)B lasers designed for 1.0–1.1μm operation
|
Gutiérrez, M.
|
|
|
33 |
7 |
p. 553-557
|
artikel
|
| 13 |
Spontaneous emission study of (111) InGaAs/GaAs quantum well lasers
|
Ulloa, J.M.
|
|
|
33 |
7 |
p. 589-593
|
artikel
|
| 14 |
The role of climb and glide in misfit relief of InGaAs/GaAs(111)B heterostructures
|
Herrera, M.
|
|
|
33 |
7 |
p. 559-563
|
artikel
|
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