| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Amplitude modulators based on the Stark effect
|
Souza, P.L.
|
|
|
33 |
4 |
p. 341-348
|
artikel
|
| 2 |
Determination of the minimum island size for full exciton localization due to thickness fluctuations in Zn1−x Cd xSe quantum wells
|
Dı́az-Arencibia, P.
|
|
|
33 |
4 |
p. 337-339
|
artikel
|
| 3 |
Electrical and optical properties of self-assembled quantum dots
|
Henini, M.
|
|
|
33 |
4 |
p. 313-318
|
artikel
|
| 4 |
Electrical field effects in n-type MOSFET and metal–nonmetal transition
|
Souza de Almeida, J.
|
|
|
33 |
4 |
p. 371-373
|
artikel
|
| 5 |
Electrical resistivity, MNM transition and band-gap narrowing of cubic GaN:Si
|
Moysés Araújo, C.
|
|
|
33 |
4 |
p. 365-369
|
artikel
|
| 6 |
Electronic properties of Fibonacci quasi-periodic heterostructures
|
Velasco, V.R.
|
|
|
33 |
4 |
p. 361-364
|
artikel
|
| 7 |
Energy levels of a quantum ring in a lateral electric field
|
Llorens, J.M.
|
|
|
33 |
4 |
p. 355-359
|
artikel
|
| 8 |
IV–VI Compound heterostructures grown by molecular beam epitaxy
|
Ueta, A.Y.
|
|
|
33 |
4 |
p. 331-335
|
artikel
|
| 9 |
Origin of the radiative emission in blue–green light emitting diodes based on GaN/InGaN heterostructures
|
Leite, J.R.
|
|
|
33 |
4 |
p. 323-329
|
artikel
|
| 10 |
Preface
|
Tutor-Sánchez, Joaquı́n
|
|
|
33 |
4 |
p. 311
|
artikel
|
| 11 |
Quantum wires and quantum dots defined by lithography with an atomic force microscope
|
Lüscher, S.
|
|
|
33 |
4 |
p. 319-321
|
artikel
|
| 12 |
Surface relaxation frequency of ground-state exciton in quantum wells
|
Atenco-Analco, N.
|
|
|
33 |
4 |
p. 375-378
|
artikel
|
| 13 |
Temperature dependence of Raman scattering and luminescence of the disordered Zn0.5Cd0.5Se alloy
|
Camacho, J
|
|
|
33 |
4 |
p. 349-353
|
artikel
|
| 14 |
The dielectric response function of systems with reduced dimensionality
|
Rodrı́guez-Coppola, H.
|
|
|
33 |
4 |
p. 379-385
|
artikel
|
Tijdschrift beschrijving