| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
AlGaAs/GaAs heterojunction bipolar transistors for power applications: issues of thermal effect and reliability
|
Liou, J.J
|
|
|
32 |
5-6 |
p. 419-431
|
artikel
|
| 2 |
A monolithic IGBT gate driver for intelligent power modules implemented in 0.8μm high voltage (50V) CMOS process
|
Park, J.M
|
|
|
32 |
5-6 |
p. 537-541
|
artikel
|
| 3 |
Analytical modelling of electrical characteristics in γ-irradiated power VDMOS transistors
|
Manić, I
|
|
|
32 |
5-6 |
p. 485-490
|
artikel
|
| 4 |
A new generation of power lateral and vertical floating islands MOS structures
|
Morancho, F
|
|
|
32 |
5-6 |
p. 509-516
|
artikel
|
| 5 |
Design, tests and applications of 3.3kV asymmetrical thyristor
|
Chamund, D.J
|
|
|
32 |
5-6 |
p. 463-471
|
artikel
|
| 6 |
High-power robust semiconductor electronics technologies in the new millennium
|
Shenai, K
|
|
|
32 |
5-6 |
p. 397-408
|
artikel
|
| 7 |
Improving the dynamic avalanche breakdown of high voltage planar devices using semi-resistive field plates
|
Dragomirescu, D
|
|
|
32 |
5-6 |
p. 473-479
|
artikel
|
| 8 |
Integration of power devices in advanced mixed signal analog BiCMOS technology
|
Efland, T.R
|
|
|
32 |
5-6 |
p. 409-418
|
artikel
|
| 9 |
Local lifetime control by light ion irradiation: impact on blocking capability of power P–i–N diode
|
Hazdra, P
|
|
|
32 |
5-6 |
p. 449-456
|
artikel
|
| 10 |
Monolithic integration of a high-performance clustered insulated gate bipolar transistor with low-voltage components to form a 3kV intelligent power chip
|
Sweet, M
|
|
|
32 |
5-6 |
p. 527-536
|
artikel
|
| 11 |
New laser technology for wire bonding in power devices
|
Kostrubiec, F
|
|
|
32 |
5-6 |
p. 543-546
|
artikel
|
| 12 |
Numerical analysis on the LDMOS with a double epi-layer and trench electrodes
|
Park, I.-Y
|
|
|
32 |
5-6 |
p. 497-502
|
artikel
|
| 13 |
PatentsALERT
|
|
|
|
32 |
5-6 |
p. 547-552
|
artikel
|
| 14 |
Physically based compact device models for circuit modelling applications
|
Mawby, P.A.
|
|
|
32 |
5-6 |
p. 433-447
|
artikel
|
| 15 |
Power superjunction devices: an analytic model for breakdown voltage
|
Strollo, A.G.M
|
|
|
32 |
5-6 |
p. 491-496
|
artikel
|
| 16 |
Progress in power semiconductors
|
Charitat, Georges
|
|
|
32 |
5-6 |
p. 395
|
artikel
|
| 17 |
Radial confinement in lateral power devices
|
Krishnan, S
|
|
|
32 |
5-6 |
p. 481-484
|
artikel
|
| 18 |
Self-protection functions in direct light-triggered high-power thyristors
|
Niedernostheide, F.-J
|
|
|
32 |
5-6 |
p. 457-461
|
artikel
|
| 19 |
SiC power DIMOS with double implanted Al/B P-well
|
Godignon, P
|
|
|
32 |
5-6 |
p. 503-507
|
artikel
|
| 20 |
Silicon-on-insulator power integrated circuits
|
Garner, D.M
|
|
|
32 |
5-6 |
p. 517-526
|
artikel
|
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