| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Computer Organization and Architecture
|
Stojcev, M
|
|
|
31 |
5 |
p. 375-376
|
artikel
|
| 2 |
Design-For-Test for Digital ICs and Embedded Core Systems
|
Stojcev, M
|
|
|
31 |
5 |
p. 373-374
|
artikel
|
| 3 |
Distributed Operating Systems: Concepts and Practice
|
Stojcev, M
|
|
|
31 |
5 |
p. 374-375
|
artikel
|
| 4 |
Drain-current DLTS study of an GaAs/InP MESFET
|
Dermoul, I
|
|
|
31 |
5 |
p. 359-363
|
artikel
|
| 5 |
Dynamic formation of a parasitic barrier to electron flow in SiGe HBTs operating at high current densities
|
Roenker, K.P.
|
|
|
31 |
5 |
p. 353-358
|
artikel
|
| 6 |
ECRL-based low power flip-flop design
|
Ng, K.W.
|
|
|
31 |
5 |
p. 365-370
|
artikel
|
| 7 |
High performance cluster computing, Vols. I & II
|
Stojcev, M
|
|
|
31 |
5 |
p. 372-373
|
artikel
|
| 8 |
Logic and Computer Design Fundamentals
|
Stojcev, M
|
|
|
31 |
5 |
p. 371
|
artikel
|
| 9 |
Metal-to-semiconductor transition in nanocrystals: size and temperature dependence
|
Mikrajuddin,
|
|
|
31 |
5 |
p. 343-351
|
artikel
|
| 10 |
Modelling of submicronic MOSFET's ageing effects using spice
|
Djahli, F.
|
|
|
31 |
5 |
p. 333-337
|
artikel
|
| 11 |
Stress analysis in strain compensated arsenide/phosphide superlattices grown by chemical beam epitaxy. Part 1
|
Bensaoula, A.H.
|
|
|
31 |
5 |
p. 311-322
|
artikel
|
| 12 |
Stress analysis in strain compensated arsenide/phosphide superlattices grown by chemical beam epitaxy. Part 2
|
Rusakova, I.A
|
|
|
31 |
5 |
p. 323-331
|
artikel
|
| 13 |
Thermal modelling of a porous silicon-based pellistor-type catalytic flammable gas sensor with two supporting beams
|
Kolev, S.D
|
|
|
31 |
5 |
p. 339-342
|
artikel
|
| 14 |
Verilog Digital Computer Design: Algorithms into Hardware
|
Stojcev, M
|
|
|
31 |
5 |
p. 371-372
|
artikel
|
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