| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
AIXTRON GmbH — The CVD engineering company
|
O'Connell, Sarah
|
|
|
27 |
4-5 |
p. i-ii
|
artikel
|
| 2 |
AlGaAs/GaAs and InGaAs/GaAs quantum wells grown on GaAs (111)A substrates
|
Watanabe, Toshihide
|
|
|
27 |
4-5 |
p. 411-421
|
artikel
|
| 3 |
Epitaxy of Mn-based magnetic thin films on semiconductors
|
De Boeck, J.
|
|
|
27 |
4-5 |
p. 383-392
|
artikel
|
| 4 |
Growth and characterization of HTSC thin films for microelectronic devices
|
Perrin, A.
|
|
|
27 |
4-5 |
p. 343-360
|
artikel
|
| 5 |
Growth of GaAs epitaxial layers on porous silicon
|
Kang, T.W.
|
|
|
27 |
4-5 |
p. 423-436
|
artikel
|
| 6 |
Low dimensional structures and devices: epitaxial deposition techniques and materials systems
|
Henini, M.
|
|
|
27 |
4-5 |
p. 253-255
|
artikel
|
| 7 |
MBE growth of fluorides
|
Sugiyama, Muneshiro
|
|
|
27 |
4-5 |
p. 361-382
|
artikel
|
| 8 |
MBE growth physics: application to device technology
|
Herman, Marian A.
|
|
|
27 |
4-5 |
p. 257-296
|
artikel
|
| 9 |
MCP Wafer Technology profile
|
|
|
|
27 |
4-5 |
p. xxi-xxv
|
artikel
|
| 10 |
MOVPE growth of III–V compounds for optoelectronic and electronic applications
|
Behet, M.
|
|
|
27 |
4-5 |
p. 297-334
|
artikel
|
| 11 |
News and updates in device application, process and materials, being applied in today's microelectronics industry
|
|
|
|
27 |
4-5 |
p. xxvii-l
|
artikel
|
| 12 |
Porous silicon: a route towards a Si-based photonics?
|
Pavesi, Lorenzo
|
|
|
27 |
4-5 |
p. 437-448
|
artikel
|
| 13 |
R&D of compound semiconductor materials in Japan energy
|
Sato, S.
|
|
|
27 |
4-5 |
p. xv-xx
|
artikel
|
| 14 |
Scaling of MOVPE processes between 1 × 2″ and 95 × 2″ wafers
|
Schmitz, Dietmar
|
|
|
27 |
4-5 |
p. 335-342
|
artikel
|
| 15 |
Stoichiometric low temperature (SLT) GaAs and AlGaAs grown by molecular beam epitaxy
|
Missous, M.
|
|
|
27 |
4-5 |
p. 393-409
|
artikel
|
| 16 |
VGF Excellence at AXT: a major force in manufacturing III-V semiconductor substrates
|
Liu, Xiao
|
|
|
27 |
4-5 |
p. iii-xiii
|
artikel
|
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