| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Advanced materials welcomed at IEDM
|
McDonald, Jo Ann
|
|
|
26 |
2-3 |
p. xv-xviii
|
artikel
|
| 2 |
Algebraic microscopic approach to drift-diffusion
|
Orlowski, Marius
|
|
|
26 |
2-3 |
p. 243-248
|
artikel
|
| 3 |
Atomistic evaluation of diffusion theories for the diffusion of dopants in vacancy gradients
|
List, S.
|
|
|
26 |
2-3 |
p. 261-264
|
artikel
|
| 4 |
CAESAR: The virtual IC factory as an integrated TCAD user environment
|
Axelrad, V.
|
|
|
26 |
2-3 |
p. 191-202
|
artikel
|
| 5 |
Consistent treatment of carrier emission and capture kinetics in electrothermal and energy transport models
|
Wachutka, Gerhard
|
|
|
26 |
2-3 |
p. 307-315
|
artikel
|
| 6 |
Device modelling for the 1990s
|
Kosina, H.
|
|
|
26 |
2-3 |
p. 217-233
|
artikel
|
| 7 |
Electro-elastic simulation of a piezoresistive pressure sensor
|
Ciampolini, P.
|
|
|
26 |
2-3 |
p. 265-272
|
artikel
|
| 8 |
First international workshop on growth, characterization and exploitation of epitaxial III–V compound semiconductors on novel index surfaces, Trento (Italy), 4–7 December 1994
|
Henini, M.
|
|
|
26 |
2-3 |
p. xix-xxiii
|
artikel
|
| 9 |
Guest editorial
|
Stojadinović, Ninoslav D.
|
|
|
26 |
2-3 |
p. 77-78
|
artikel
|
| 10 |
High speed semiconductor devices: Circuit aspects and fundamental behaviour
|
Henini, M.
|
|
|
26 |
2-3 |
p. xxviii
|
artikel
|
| 11 |
High-speed VLSI interconnections: Modeling analysis and simulation
|
Harris, M.S.
|
|
|
26 |
2-3 |
p. xxx
|
artikel
|
| 12 |
InP HBTs: Growth, processing and applications
|
Henini, M.
|
|
|
26 |
2-3 |
p. xxviii-xxix
|
artikel
|
| 13 |
Introduction to neural networks
|
Hurst, S.L.
|
|
|
26 |
2-3 |
p. xxx
|
artikel
|
| 14 |
Lifetime calculations of MOSFETs using depth-dependent non-local impact ionization
|
van Dort, M.J.
|
|
|
26 |
2-3 |
p. 301-305
|
artikel
|
| 15 |
Mechanical stress simulation during gate formation of MOS devices considering crystallization-induced stress of phosphorus-doped silicon thin films
|
Miura, Hideo
|
|
|
26 |
2-3 |
p. 249-253
|
artikel
|
| 16 |
Modelling high concentration boron diffusion with dynamic clustering: influence of the initial conditions
|
Baccus, Bruno
|
|
|
26 |
2-3 |
p. 235-242
|
artikel
|
| 17 |
MOSFET models for VLSI circuit simulation
|
Arora, N.
|
|
|
26 |
2-3 |
p. xxvi-xxvii
|
artikel
|
| 18 |
Multigrid methods for process simulation
|
Joppich, W.
|
|
|
26 |
2-3 |
p. xxvii-xxviii
|
artikel
|
| 19 |
News update
|
|
|
|
26 |
2-3 |
p. i-vii
|
artikel
|
| 20 |
NTT develops prototype nanostructure silicon single-electron transistor operating near room temperature
|
|
|
|
26 |
2-3 |
p. viii-x
|
artikel
|
| 21 |
Physical modelling of the enhanced diffusion of boron due to ion implantation in thin-base npn bipolar transistors
|
Mouis, M.
|
|
|
26 |
2-3 |
p. 255-259
|
artikel
|
| 22 |
Process simulation for the 1990s
|
Stippel, H.
|
|
|
26 |
2-3 |
p. 203-215
|
artikel
|
| 23 |
Properties of Group III nitrides
|
Henini, M.
|
|
|
26 |
2-3 |
p. xxix-xxx
|
artikel
|
| 24 |
Technology CAD at AT&T
|
Lloyd, Peter
|
|
|
26 |
2-3 |
p. 79-97
|
artikel
|
| 25 |
Technology CAD at OKI
|
Ueda, J.
|
|
|
26 |
2-3 |
p. 159-175
|
artikel
|
| 26 |
Technology CAD at Stanford University: physics, algorithms, software and applications
|
Dutton, Robert W.
|
|
|
26 |
2-3 |
p. 99-111
|
artikel
|
| 27 |
The 1994 international conference on electronic materials (ICEM 94)
|
Tu, Charles W.
|
|
|
26 |
2-3 |
p. xi-xiii
|
artikel
|
| 28 |
The MASTER Framework
|
Hopper, Peter J.
|
|
|
26 |
2-3 |
p. 177-190
|
artikel
|
| 29 |
The stationary semiconductor device equations
|
Markowich, P.A.
|
|
|
26 |
2-3 |
p. xxv-xxvi
|
artikel
|
| 30 |
The STORM technology CAD system
|
Lorenz, J.
|
|
|
26 |
2-3 |
p. 113-135
|
artikel
|
| 31 |
The Viennese integrated system for technology CAD applications
|
Halama, S.
|
|
|
26 |
2-3 |
p. 137-158
|
artikel
|
| 32 |
Three-dimensional implementation of a unified transport model
|
Pierantoni, A.
|
|
|
26 |
2-3 |
p. 287-300
|
artikel
|
| 33 |
Two-dimensional numerical simulations of high-efficiency silicon solar cells
|
Heiser, G.
|
|
|
26 |
2-3 |
p. 273-286
|
artikel
|
Tijdschrift beschrijving