| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A quarter century of microelectronics: what happened in analog electronics and what is ahead?
|
Davidse, Jan
|
|
|
25 |
1 |
p. xvii-xxii
|
artikel
|
| 2 |
A quarter of a century of microelectronics
|
Moore, Gordon E.
|
|
|
25 |
1 |
p. xi-xv
|
artikel
|
| 3 |
Developments in single wafer multiprocessing
|
Harrison, H.B.
|
|
|
25 |
1 |
p. 1-8
|
artikel
|
| 4 |
Digital and microprocessor engineering
|
Hurst, S.L.
|
|
|
25 |
1 |
p. 77
|
artikel
|
| 5 |
Editorial Board
|
|
|
|
25 |
1 |
p. II
|
artikel
|
| 6 |
Effect of parasitic resistances on electrical characteristics of an amorphous silicon TFT
|
Gangopadhyay, U.
|
|
|
25 |
1 |
p. 27-32
|
artikel
|
| 7 |
Electronic packaging, microelectronics, and interconnection dictionary
|
Griffiths, G.W.
|
|
|
25 |
1 |
p. 78
|
artikel
|
| 8 |
ESD and transient protection of microwave semiconductor devices and integrated circuits based on field emitter structures
|
Bock, K.
|
|
|
25 |
1 |
p. 69-74
|
artikel
|
| 9 |
Field-programmable gate arrays
|
Hurst, S.L.
|
|
|
25 |
1 |
p. 77-78
|
artikel
|
| 10 |
Heat sink analysis for two-terminal cylindrical microwave oscillator devices
|
Batchelor, A.R.
|
|
|
25 |
1 |
p. 33-40
|
artikel
|
| 11 |
High-power GaAs FET amplifiers
|
Hurst, S.L.
|
|
|
25 |
1 |
p. 75
|
artikel
|
| 12 |
Hot carrier design considerations for MOS devices and circuits
|
Morant, M.J.
|
|
|
25 |
1 |
p. 75
|
artikel
|
| 13 |
Logic synthesis and optimization
|
Harris, M.S.
|
|
|
25 |
1 |
p. 78
|
artikel
|
| 14 |
MOSFET parameter extraction from static, dynamic and transient current measurements
|
Bauza, D.
|
|
|
25 |
1 |
p. 41-61
|
artikel
|
| 15 |
New silicon device structures: a quantum leap in microelectronics development
|
Dimitrijev, Sima
|
|
|
25 |
1 |
p. 9-16
|
artikel
|
| 16 |
Optical computing: an introduction
|
Bannister, B.R.
|
|
|
25 |
1 |
p. 76
|
artikel
|
| 17 |
Quarter century of field of microelectronics and “microelectronics journal”: Joint crossroads for further progress and development
|
Stojadinovic, Ninoslav D.
|
|
|
25 |
1 |
p. iii-ix
|
artikel
|
| 18 |
Quarter century of microelectronics in Japan
|
Uenohara, Michiyuki
|
|
|
25 |
1 |
p. xxiii-xxviii
|
artikel
|
| 19 |
Realistic expectations
|
McDonald, Jo Ann
|
|
|
25 |
1 |
p. xix-xxxi
|
artikel
|
| 20 |
Semiconductors and electronic devices
|
Hurst, S.L.
|
|
|
25 |
1 |
p. 77
|
artikel
|
| 21 |
Sensitivity and response times of doped tin oxide integrated gas sensors
|
Nayak, M.S
|
|
|
25 |
1 |
p. 17-25
|
artikel
|
| 22 |
The effect of process parameters on dc self-bias voltage in reactive ion etching of GaAs using CH4/H2
|
Sahafi, H.F.
|
|
|
25 |
1 |
p. 63-68
|
artikel
|
| 23 |
25 Years of microelectronics journal?
|
|
|
|
25 |
1 |
p. i-ii
|
artikel
|
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