| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
ALE-3
|
|
|
|
24 |
8 |
p. 715-716
|
artikel
|
| 2 |
An introduction to GaAs/GaAlAs HBTs for power applications
|
Crouch, M.A.
|
|
|
24 |
8 |
p. 779-794
|
artikel
|
| 3 |
A second decade of semiconductor heterojunction devices
|
Kelly, M.J.
|
|
|
24 |
8 |
p. 723-739
|
artikel
|
| 4 |
Compound semiconductor update
|
|
|
|
24 |
8 |
p. 713-714
|
artikel
|
| 5 |
Current-mode highpass, bandpass and lowpass filters using the operational amplifier pole
|
Higashimura, Masami
|
|
|
24 |
8 |
p. 863-866
|
artikel
|
| 6 |
Deep-submicron HEMT technology
|
Abe, Masayuki
|
|
|
24 |
8 |
p. 741-753
|
artikel
|
| 7 |
Electrical characterization and reliability of double-doped drain MOS transistors compatible with an EEPROM process
|
Pavan, Paolo
|
|
|
24 |
8 |
p. 827-839
|
artikel
|
| 8 |
EQEC 94 / CLEO Europe 94
|
|
|
|
24 |
8 |
p. 716-717
|
artikel
|
| 9 |
ESPREC 94
|
|
|
|
24 |
8 |
p. 717
|
artikel
|
| 10 |
EuroMBE VIII
|
|
|
|
24 |
8 |
p. 715
|
artikel
|
| 11 |
EXMATECH 94
|
|
|
|
24 |
8 |
p. 715
|
artikel
|
| 12 |
Fractional superlattices and their device applications
|
Fukui, Takashi
|
|
|
24 |
8 |
p. 795-803
|
artikel
|
| 13 |
Geometrical effects in SRO-MISS switching devices
|
Majlis, B.Yeop
|
|
|
24 |
8 |
p. 841-848
|
artikel
|
| 14 |
ICEM 94
|
|
|
|
24 |
8 |
p. 717
|
artikel
|
| 15 |
ICMOVPE-VII
|
|
|
|
24 |
8 |
p. 716
|
artikel
|
| 16 |
IIT 94
|
|
|
|
24 |
8 |
p. 716
|
artikel
|
| 17 |
II–VI compounds & related optoelectronic materials
|
Prior, Kevin
|
|
|
24 |
8 |
p. 707-712
|
artikel
|
| 18 |
IPRM VI
|
|
|
|
24 |
8 |
p. 715
|
artikel
|
| 19 |
ISSCC94
|
|
|
|
24 |
8 |
p. 715
|
artikel
|
| 20 |
Light-activated switching based on light-induced band-structure modifications
|
Weegels, L.M.
|
|
|
24 |
8 |
p. 817-825
|
artikel
|
| 21 |
MBE at Nanyang Technological University
|
Yoon, S.F.
|
|
|
24 |
8 |
p. 699-701
|
artikel
|
| 22 |
MBE growth of pseudomorphic HEMT structures for MMIC applications
|
Claxton, Peter A.
|
|
|
24 |
8 |
p. 755-761
|
artikel
|
| 23 |
MBE-VIII
|
|
|
|
24 |
8 |
p. 716
|
artikel
|
| 24 |
MEJ-LDSD 1993, 1994, 1995
|
Szweda, Roy
|
|
|
24 |
8 |
p. 697-698
|
artikel
|
| 25 |
MRS Fall Meeting
|
|
|
|
24 |
8 |
p. 717
|
artikel
|
| 26 |
MRS Spring Meeting
|
|
|
|
24 |
8 |
p. 715
|
artikel
|
| 27 |
Nanostructure optical emitters based on quasibound electron energy levels
|
Henderson, Gregory N.
|
|
|
24 |
8 |
p. 805-816
|
artikel
|
| 28 |
New life for GaAs emitters
|
Moore, Alan
|
|
|
24 |
8 |
p. 703-706
|
artikel
|
| 29 |
Resonant tunnelling double barrier heterostructures
|
Lippens, D.
|
|
|
24 |
8 |
p. 763-778
|
artikel
|
| 30 |
SI 35 MC VIII
|
|
|
|
24 |
8 |
p. 716
|
artikel
|
| 31 |
Simulation of thermal effects in integrated circuits with SPICE - a behavioural model approach
|
Rudolph, H.
|
|
|
24 |
8 |
p. 849-861
|
artikel
|
| 32 |
The first microelectronics journal special issue on low dimensional structures and devices
|
Henini, Mohamed
|
|
|
24 |
8 |
p. 719-721
|
artikel
|
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