| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Advanced methods for diagnostics of the GTO thyristor
|
Hátle, M.
|
|
|
24 |
1-2 |
p. 147-155
|
artikel
|
| 2 |
Analysis of new lateral insulated gate bipolar transistor structures for power applications
|
Godignon, P.
|
|
|
24 |
1-2 |
p. 87-97
|
artikel
|
| 3 |
A review of modern power semiconductor devices
|
Hudgins, J.L.
|
|
|
24 |
1-2 |
p. 41-54
|
artikel
|
| 4 |
ASICs Vitesse Introduces VIPER low cost gate array family
|
|
|
|
24 |
1-2 |
p. 20-27
|
artikel
|
| 5 |
A smart power transistor for high voltage inverter applications
|
Gabriel, Rupprecht
|
|
|
24 |
1-2 |
p. 55-60
|
artikel
|
| 6 |
Computer architecture: a quantitative approach
|
Shute, M.
|
|
|
24 |
1-2 |
p. 157-158
|
artikel
|
| 7 |
Designing with high performance ASICs
|
|
|
|
24 |
1-2 |
p. 28
|
artikel
|
| 8 |
Digital hardware testing: Transistor-level modelling and testing
|
|
|
|
24 |
1-2 |
p. 29-30
|
artikel
|
| 9 |
Digital system design (2nd edition)
|
Harris, M.S.
|
|
|
24 |
1-2 |
p. 157
|
artikel
|
| 10 |
Discrete surface mount products for power applications
|
Hollander, Dave
|
|
|
24 |
1-2 |
p. 15-19
|
artikel
|
| 11 |
Editorial Board
|
|
|
|
24 |
1-2 |
p. iv
|
artikel
|
| 12 |
Editorial — something special for 1993
|
Szweda, Roy
|
|
|
24 |
1-2 |
p. 1
|
artikel
|
| 13 |
ESD effects in power MOSFETs: a review
|
Zupac, Dragan
|
|
|
24 |
1-2 |
p. 125-138
|
artikel
|
| 14 |
Forthcoming events
|
|
|
|
24 |
1-2 |
p. 159
|
artikel
|
| 15 |
Guest editorial: Power microelectronics — The three phases
|
Stojadinovic, Ninoslav
|
|
|
24 |
1-2 |
p. 2-3
|
artikel
|
| 16 |
High voltage bipolar transistor with new planar termination
|
Aloïsi, P.A.
|
|
|
24 |
1-2 |
p. 75-85
|
artikel
|
| 17 |
Hitachi HEMT provides boost for DBS
|
|
|
|
24 |
1-2 |
p. 27
|
artikel
|
| 18 |
Intel P6 available in 18 months
|
|
|
|
24 |
1-2 |
p. 27
|
artikel
|
| 19 |
Markets and marketing strategies for smart power ICs
|
Wilson, Peter
|
|
|
24 |
1-2 |
p. 5-9
|
artikel
|
| 20 |
Microwave integrated circuits
|
Free, C.E.
|
|
|
24 |
1-2 |
p. 158-159
|
artikel
|
| 21 |
Motorola reveals 68060 technical details
|
|
|
|
24 |
1-2 |
p. 27
|
artikel
|
| 22 |
Power devices modelling: on and off state
|
Charitat, G.
|
|
|
24 |
1-2 |
p. 99-113
|
artikel
|
| 23 |
Power semiconductor devices for the 1990s
|
Jayant Baliga, B.
|
|
|
24 |
1-2 |
p. 31-39
|
artikel
|
| 24 |
RTP System uses microwave heating
|
|
|
|
24 |
1-2 |
p. 27
|
artikel
|
| 25 |
Stable calculation for power device simulation with inductive load circuit: application of an integral method
|
Iwamuro, Noriyuki
|
|
|
24 |
1-2 |
p. 139-145
|
artikel
|
| 26 |
Surviving the ASIC experience
|
|
|
|
24 |
1-2 |
p. 28-29
|
artikel
|
| 27 |
Temperature dependence of on-resistance in low-voltage power VDMOS transistors
|
Pavlović, Z.
|
|
|
24 |
1-2 |
p. 115-124
|
artikel
|
| 28 |
The bipolar mode FET: a new power device combining FET with BJT operation
|
Spirito, Paolo
|
|
|
24 |
1-2 |
p. 61-74
|
artikel
|
| 29 |
The power semiconductor market in Europe
|
Towers, Matthew
|
|
|
24 |
1-2 |
p. 11-13
|
artikel
|
Tijdschrift beschrijving