| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A comparison of optical and electronic residue position-coded look-up tables
|
|
|
1989
|
20 |
5 |
p. 48-
1 p.
|
artikel
|
| 2 |
A comparison of VLSI architecture of finite field multipliers using dual, normal, or standard bases
|
|
|
1989
|
20 |
5 |
p. 49-
1 p.
|
artikel
|
| 3 |
A digitally programmable dual-input differentiator
|
Sanyal, S.K.
|
|
1989
|
20 |
5 |
p. 17-23
7 p.
|
artikel
|
| 4 |
An integrated AlGaAs two-beam laser diode-photodiode array fabricated with reactive ion beam etching
|
|
|
1989
|
20 |
5 |
p. 47-
1 p.
|
artikel
|
| 5 |
Annealing technology under arsenic overpressure for GaAs LSI — influence on dislocation and threshold voltage
|
|
|
1989
|
20 |
5 |
p. 48-
1 p.
|
artikel
|
| 6 |
Approach to high speed operation of InGaAs/InP monolithic PIN/amplifier
|
|
|
1989
|
20 |
5 |
p. 48-
1 p.
|
artikel
|
| 7 |
A programmable fuzzifier integrated circuit — synthesis, design, and fabrication
|
|
|
1989
|
20 |
5 |
p. 49-
1 p.
|
artikel
|
| 8 |
A v-groove Schottky/pn diode
|
Ang, Simon S.
|
|
1989
|
20 |
5 |
p. 7-12
6 p.
|
artikel
|
| 9 |
Editorial
|
Butcher, John
|
|
1989
|
20 |
5 |
p. iv-
1 p.
|
artikel
|
| 10 |
Electron microscope analysis of thermally annealed semi-insulating gallium arsenide
|
Sinha, M.P.
|
|
1989
|
20 |
5 |
p. 13-15
3 p.
|
artikel
|
| 11 |
Formation of submicron PMOS transistors by implantation into silicide
|
|
|
1989
|
20 |
5 |
p. 48-
1 p.
|
artikel
|
| 12 |
Forthcoming events
|
|
|
1989
|
20 |
5 |
p. 60-
1 p.
|
artikel
|
| 13 |
Gallium arsenide HEMTs for low-noise GHz communications engineering
|
Dämbkes, Heinrich
|
|
1989
|
20 |
5 |
p. 1-6
6 p.
|
artikel
|
| 14 |
IEEE International conference on microelectronic Test structures
|
|
|
1989
|
20 |
5 |
p. iii-
1 p.
|
artikel
|
| 15 |
Monolithic integration of LD/HBTs on a semi-insulating InP substrate
|
|
|
1989
|
20 |
5 |
p. 47-
1 p.
|
artikel
|
| 16 |
MOSIS — a gateway to silicon
|
|
|
1989
|
20 |
5 |
p. 48-49
2 p.
|
artikel
|
| 17 |
OEIC photoreceiver using InP system with a 5 V source voltage supply
|
|
|
1989
|
20 |
5 |
p. 48-
1 p.
|
artikel
|
| 18 |
Optoelectronic neural networks based on holographically interconnected processors
|
|
|
1989
|
20 |
5 |
p. 48-
1 p.
|
artikel
|
| 19 |
Parliamentary report
|
|
|
1989
|
20 |
5 |
p. 50-55
6 p.
|
artikel
|
| 20 |
Performance limits of mixed analogue/digital circuits with scaled MOSFETs
|
|
|
1989
|
20 |
5 |
p. 49-
1 p.
|
artikel
|
| 21 |
Present status of semiconductor integrated optical circuits
|
|
|
1989
|
20 |
5 |
p. 47-
1 p.
|
artikel
|
| 22 |
Research and development
|
|
|
1989
|
20 |
5 |
p. 56-59
4 p.
|
artikel
|
| 23 |
Scintillation analysis: ‘see’ into the heart of the chip
|
|
|
1989
|
20 |
5 |
p. 49-
1 p.
|
artikel
|
| 24 |
Simplified analysis of body-contact effect for MOSFET/SOI
|
|
|
1989
|
20 |
5 |
p. 49-
1 p.
|
artikel
|
| 25 |
The implementation and applications of current conveyors
|
Kumar, U.
|
|
1989
|
20 |
5 |
p. 25-46
22 p.
|
artikel
|
| 26 |
The state of the art of the optoelectronics integrated circuit (OEIC) and its future prospect
|
|
|
1989
|
20 |
5 |
p. 47-
1 p.
|
artikel
|
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