no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
1 |
A comparison of MOS processes for VLSI Part I
|
|
|
|
18 |
5 |
p. 61 |
article |
2 |
A comprehensive sequence for the electron beam exposure system
|
|
|
|
18 |
5 |
p. 63 |
article |
3 |
Ammonium persulfate as a stripping and cleaning oxidant
|
|
|
|
18 |
5 |
p. 62 |
article |
4 |
An approach to ensure stability of precision laser trimmed thick film resistors
|
|
|
|
18 |
5 |
p. 64 |
article |
5 |
A novel memory device for VLSI E2PROM
|
|
|
|
18 |
5 |
p. 60 |
article |
6 |
A simulative approach to electron conduction is thickfilm resistors
|
|
|
|
18 |
5 |
p. 64 |
article |
7 |
Bipolar device packaging-electrical, thermal, and mechanical stress considerations
|
|
|
|
18 |
5 |
p. 61 |
article |
8 |
Bipolar gate array delivers fast signal processing
|
|
|
|
18 |
5 |
p. 60 |
article |
9 |
Book review
|
Shute, Malcolm |
|
|
18 |
5 |
p. 45 |
article |
10 |
Ceramic on metal substrates produced by plasma spraying for thick film technology
|
|
|
|
18 |
5 |
p. 62 |
article |
11 |
Compatibility in microcomputers
|
|
|
|
18 |
5 |
p. 59 |
article |
12 |
Computer power to the people: computer resource centres or home terminals? Two scenarios
|
|
|
|
18 |
5 |
p. 61 |
article |
13 |
Computers put you in the picture
|
|
|
|
18 |
5 |
p. 59 |
article |
14 |
Current noise is thick and thin film resistors
|
|
|
|
18 |
5 |
p. 64 |
article |
15 |
CV characteristics of MOS capacitors with two top capacitive contacts
|
McGillivray, I.G. |
|
|
18 |
5 |
p. 25-27 |
article |
16 |
Data processing caught in the act
|
|
|
|
18 |
5 |
p. 60 |
article |
17 |
Design for testability—a survey
|
|
|
|
18 |
5 |
p. 63 |
article |
18 |
Design system for semicustom VLSI circuits
|
|
|
|
18 |
5 |
p. 61 |
article |
19 |
Design systems for VLSI circuits
|
|
|
|
18 |
5 |
p. 47 |
article |
20 |
Developments in crystal growth from high-temperature solutions
|
|
|
|
18 |
5 |
p. 62 |
article |
21 |
Editorial
|
Butcher, John B. |
|
|
18 |
5 |
p. 3 |
article |
22 |
Electrical properties of Si−SiO2 structures treated in helium plasma
|
Kassabov, J. |
|
|
18 |
5 |
p. 5-12 |
article |
23 |
Evaluation of Du Pont copper-compatible resistor system
|
|
|
|
18 |
5 |
p. 64 |
article |
24 |
Failures induced by electromigration in ECL 100k devices
|
|
|
|
18 |
5 |
p. 62 |
article |
25 |
Fast CMOS logic bids for TTL sockets in most systems
|
|
|
|
18 |
5 |
p. 60 |
article |
26 |
Fifth generation computing promises optimistic outlook for 1990's
|
|
|
|
18 |
5 |
p. 59 |
article |
27 |
Forthcoming events
|
|
|
|
18 |
5 |
p. 58 |
article |
28 |
Handbook of Microelectronics Packaging and Interconnection Technologies
|
Pitt, Keith |
|
|
18 |
5 |
p. 45-46 |
article |
29 |
Impact of custom VLSI technology
|
|
|
|
18 |
5 |
p. 60 |
article |
30 |
Improved planar isolation with buried-channel MOS-FETs
|
|
|
|
18 |
5 |
p. 61 |
article |
31 |
Interactive authoring system on a small personal computer
|
|
|
|
18 |
5 |
p. 60 |
article |
32 |
Investigation of thick film technology for microwave applications
|
Stennes, M.J. |
|
|
18 |
5 |
p. 29-35 |
article |
33 |
It's still fast times for a hot industry
|
|
|
|
18 |
5 |
p. 61 |
article |
34 |
Metal migrations outside the package during accelerated life tests
|
|
|
|
18 |
5 |
p. 63 |
article |
35 |
Methodologies for full custom VLSI design
|
|
|
|
18 |
5 |
p. 61 |
article |
36 |
Modular approach to CMOS technology tailors process to application
|
|
|
|
18 |
5 |
p. 60 |
article |
37 |
On discrete hazard functions
|
|
|
|
18 |
5 |
p. 63 |
article |
38 |
Parliamentary report
|
|
|
|
18 |
5 |
p. 49-51 |
article |
39 |
Personal computer graphics standards
|
|
|
|
18 |
5 |
p. 59 |
article |
40 |
Removal processes for damage and contamination after CF4/40%H2 reactive ion etching of silicon
|
Singh, Awatar |
|
|
18 |
5 |
p. 13-24 |
article |
41 |
Research and Development
|
|
|
|
18 |
5 |
p. 52-57 |
article |
42 |
Roop
|
|
|
|
18 |
5 |
p. 60 |
article |
43 |
Second generation' silicon compilers
|
Dlay, S.S. |
|
|
18 |
5 |
p. 37-44 |
article |
44 |
Self-consistent theory of diagonal and off-diagonal disorder in the screened impurity band of doped semiconductors
|
|
|
|
18 |
5 |
p. 62 |
article |
45 |
Semiconductor processing
|
|
|
|
18 |
5 |
p. 63 |
article |
46 |
Solder pastes for microelectronics
|
|
|
|
18 |
5 |
p. 62 |
article |
47 |
Status and prospects for gallium arsenide technology
|
|
|
|
18 |
5 |
p. 60 |
article |
48 |
The ageing behaviour of commercial thick-film resistors
|
|
|
|
18 |
5 |
p. 63-64 |
article |
49 |
The bubble is surfacing
|
|
|
|
18 |
5 |
p. 59 |
article |
50 |
The integrated office: its present and future
|
|
|
|
18 |
5 |
p. 59-60 |
article |
51 |
Thermal Design of Electronic Circuit Boards and Packages
|
Pitt, Keith |
|
|
18 |
5 |
p. 46 |
article |
52 |
The role of inorganic materials in dry-processed resist technology
|
|
|
|
18 |
5 |
p. 62 |
article |
53 |
Transition to one micro technology: Part 2
|
|
|
|
18 |
5 |
p. 61 |
article |
54 |
Using micros to manage production
|
|
|
|
18 |
5 |
p. 60 |
article |
55 |
ZRM 20—an electron-beam mask and wafer measuring and inspection system
|
|
|
|
18 |
5 |
p. 63 |
article |