| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A 10-bit 4 GS/s Pipelined-SAR ADC based on loop-unrolled and partial-interleaving
|
Zhou, Weimin
|
|
|
160 |
C |
p.
|
artikel
|
| 2 |
A 20-bit 1MS/s SAR ADC suppressing the dynamic error caused by thermal effect in the static comparator
|
Zhu, Zhenyu
|
|
|
160 |
C |
p.
|
artikel
|
| 3 |
A broadband high gain driver amplifier with gain compensation for current-reuse
|
Gong, Tingwei
|
|
|
160 |
C |
p.
|
artikel
|
| 4 |
A 16-channel, multi-level Time-to-Digital Converter for high precision ToF measurement
|
Zhao, Ziwei
|
|
|
160 |
C |
p.
|
artikel
|
| 5 |
A cross-matrix arbiter PUF with high reliability and ML-resistance for IoT device security
|
He, Zhangqing
|
|
|
160 |
C |
p.
|
artikel
|
| 6 |
A 8-22.8 GHz dual feedback wideband CMOS low-noise amplifier including package effects
|
Du, Yongqian
|
|
|
160 |
C |
p.
|
artikel
|
| 7 |
A 10–15 GHz four-antenna phased array beamforming receiver with eight-simultaneous beams in 55-nm CMOS Technology
|
Li, Bin
|
|
|
160 |
C |
p.
|
artikel
|
| 8 |
Algorithm of the inter-channel mismatches calibration in TIADC
|
Wang, Chengjie
|
|
|
160 |
C |
p.
|
artikel
|
| 9 |
A microwave probe tip height measurement method for wafer testing
|
Dou, Long
|
|
|
160 |
C |
p.
|
artikel
|
| 10 |
A 0.000159 mm2 2.9 μm-pitch 4.3fJ/Conv 6-bit SAR ADC for high throughput parallel readout of analog SRAM computing-in-memory
|
Wu, Lin
|
|
|
160 |
C |
p.
|
artikel
|
| 11 |
A 500 MS/s 12b single channel SAR-assisted pipelined ADC with two-stage open-loop dynamic amplifier
|
Su, Qing
|
|
|
160 |
C |
p.
|
artikel
|
| 12 |
An adaptive background light rejection technique with integrated laser interference filter for direct time-of-flight sensors
|
Wang, Huazhen
|
|
|
160 |
C |
p.
|
artikel
|
| 13 |
An efficient surface-potential-based compact model for dynamically depleted silicon-on-insulator MOSFETs
|
Yu, Tianye
|
|
|
160 |
C |
p.
|
artikel
|
| 14 |
A novel 8T2R NVSRAM with synchronizing write and store function
|
Su, Bowen
|
|
|
160 |
C |
p.
|
artikel
|
| 15 |
A 15.4 nW, 59 ppm/ ∘ C CMOS voltage reference circuit with process and temperature compensation
|
Wang, Annan
|
|
|
160 |
C |
p.
|
artikel
|
| 16 |
A true random number generator based on autonomous Boolean network with imbalanced node oscillation rings
|
Yi, Maoxiang
|
|
|
160 |
C |
p.
|
artikel
|
| 17 |
Automated solutions for CNN model acceleration on mobile platforms
|
Liu, Yuhao
|
|
|
160 |
C |
p.
|
artikel
|
| 18 |
Drain side pocket-based Germanium nanotube tunnel FET for low power complementary ternary inverter
|
Saini, Navneet Kaur
|
|
|
160 |
C |
p.
|
artikel
|
| 19 |
Editorial Board
|
|
|
|
160 |
C |
p.
|
artikel
|
| 20 |
PRLM: A parallel loading mechanism for a deep neural network accelerator based on NoC
|
Ouyang, Yiming
|
|
|
160 |
C |
p.
|
artikel
|
| 21 |
Study of DRAM data failure mechanism and mitigation scheme under the combination of TID and row hammer
|
Wu, Zhenlin
|
|
|
160 |
C |
p.
|
artikel
|
| 22 |
Temperature dependence of dynamic performance of SiC MOSFETs in a half-bridge configuration
|
Wang, Tianlu
|
|
|
160 |
C |
p.
|
artikel
|
| 23 |
Theoretical study of carrier transport with quantum confinement effects in GaN HEMT by the Schrödinger-equation modulated drift–diffusion model
|
Huang, Qinyi
|
|
|
160 |
C |
p.
|
artikel
|
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