| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Advances in automated wire and die bonding
|
|
|
|
15 |
4 |
p. 59
|
artikel
|
| 2 |
Advances in contamination control of processing chemicals in VLSI
|
|
|
|
15 |
4 |
p. 62
|
artikel
|
| 3 |
An approach to ensure stability of precision laser trimmed thick film resistors
|
|
|
|
15 |
4 |
p. 60-61
|
artikel
|
| 4 |
An automated, low power, high speed complementary PLA design system for VLSI applications
|
Powell, S.
|
|
|
15 |
4 |
p. 47-54
|
artikel
|
| 5 |
A new failure mechanism in thin gold films at elevated temperatures
|
|
|
|
15 |
4 |
p. 63
|
artikel
|
| 6 |
Applications of ellipsometry to in situ study of the growth of hydrogenated amorphous films
|
|
|
|
15 |
4 |
p. 63-64
|
artikel
|
| 7 |
A simulative approach to electron conduction is thick-film resistors
|
|
|
|
15 |
4 |
p. 60
|
artikel
|
| 8 |
A single-chip CMOS analog front-end for high-speed modems
|
Fotouhi, B.
|
|
|
15 |
4 |
p. 5-19
|
artikel
|
| 9 |
Assembley equipment users speak out
|
|
|
|
15 |
4 |
p. 63
|
artikel
|
| 10 |
Back-contact resistor network pares wire count in ECL hybrids
|
|
|
|
15 |
4 |
p. 60
|
artikel
|
| 11 |
Ceramic on metal substrates produced by plasma spraying for thick film technology
|
|
|
|
15 |
4 |
p. 64
|
artikel
|
| 12 |
Chip-carriers change their course
|
|
|
|
15 |
4 |
p. 60
|
artikel
|
| 13 |
CMOS single-chip digital signal processor
|
Hara, Hideo
|
|
|
15 |
4 |
p. 20-28
|
artikel
|
| 14 |
Combinatorial reliability analysis of multiprocessor computers
|
|
|
|
15 |
4 |
p. 58
|
artikel
|
| 15 |
Current noise is thick and thin film resistors
|
|
|
|
15 |
4 |
p. 60
|
artikel
|
| 16 |
Density upgrading in tape automated bonding
|
|
|
|
15 |
4 |
p. 59-60
|
artikel
|
| 17 |
Developments in crystal growth from high-temperature solutions
|
|
|
|
15 |
4 |
p. 64
|
artikel
|
| 18 |
Device modeling
|
|
|
|
15 |
4 |
p. 59
|
artikel
|
| 19 |
Diffusion of zinc into ion-implanted gallium arsenide
|
|
|
|
15 |
4 |
p. 63
|
artikel
|
| 20 |
Editorial
|
Butcher, John
|
|
|
15 |
4 |
p. 3
|
artikel
|
| 21 |
Effects of MBE growth conditions on carbon contamination in GaAs
|
|
|
|
15 |
4 |
p. 63
|
artikel
|
| 22 |
Evaluation of Du Pont copper-compatible resistor system
|
|
|
|
15 |
4 |
p. 61
|
artikel
|
| 23 |
Experience with polymer thick film technology
|
|
|
|
15 |
4 |
p. 60
|
artikel
|
| 24 |
Failure modes induced in TTL-LS bipolar logics by negative inputs
|
|
|
|
15 |
4 |
p. 58
|
artikel
|
| 25 |
Float-zoning of semiconductor silicon: a perspective
|
|
|
|
15 |
4 |
p. 62
|
artikel
|
| 26 |
Integrable tunable dual-function integrator/differentiator network with extremely low value grounded capacitor
|
Nandi, S.
|
|
|
15 |
4 |
p. 41-46
|
artikel
|
| 27 |
Ion beam etching with reactive gases
|
|
|
|
15 |
4 |
p. 64
|
artikel
|
| 28 |
Ion projection microlithography
|
|
|
|
15 |
4 |
p. 64
|
artikel
|
| 29 |
Minority carrier diffusion length in LPE InxGa1−xP:N layers (χ<0.01)
|
|
|
|
15 |
4 |
p. 61
|
artikel
|
| 30 |
Model for transient and permanent error-detection and fault-isolation coverage
|
|
|
|
15 |
4 |
p. 58-59
|
artikel
|
| 31 |
Non-homogeneous electrical transport through silicon-on-sapphire thin films: evidence of the internal stress influence
|
|
|
|
15 |
4 |
p. 61-62
|
artikel
|
| 32 |
[No title]
|
Stoddart, R.
|
|
|
15 |
4 |
p. 55
|
artikel
|
| 33 |
[No title]
|
Bayford, Richard
|
|
|
15 |
4 |
p. 55-56
|
artikel
|
| 34 |
[No title]
|
Bayford, Richard
|
|
|
15 |
4 |
p. 56-57
|
artikel
|
| 35 |
[No title]
|
Brazier, T.
|
|
|
15 |
4 |
p. 57
|
artikel
|
| 36 |
On discrete hazard functions
|
|
|
|
15 |
4 |
p. 61
|
artikel
|
| 37 |
Particle size analysis techniques for metal powders and frits used in thick-film pastes
|
|
|
|
15 |
4 |
p. 62-63
|
artikel
|
| 38 |
Parts control and reliability assurance of RF hybrids
|
|
|
|
15 |
4 |
p. 59
|
artikel
|
| 39 |
Properties of digital microelectronic systems from the viewpoint of signal transmission
|
|
|
|
15 |
4 |
p. 58
|
artikel
|
| 40 |
Self-consistent theory of diagonal and off-diogonal disorder in the screened impurity band of doped semiconductors
|
|
|
|
15 |
4 |
p. 64
|
artikel
|
| 41 |
Temperature verification of hybrid microelectronic circuit design
|
|
|
|
15 |
4 |
p. 59
|
artikel
|
| 42 |
The ageing behaviour of commercial thick-film resistors
|
|
|
|
15 |
4 |
p. 61
|
artikel
|
| 43 |
The design of a truly random monolithic noise generator
|
Penzhorn, W.T.
|
|
|
15 |
4 |
p. 29-40
|
artikel
|
| 44 |
The influence of hydrogen gas on the characteristics of amorphous silicon deposited by RF sputtering
|
|
|
|
15 |
4 |
p. 62
|
artikel
|
| 45 |
The properties of thick-film resistors on dielectrics
|
|
|
|
15 |
4 |
p. 62
|
artikel
|
| 46 |
Thermal analysis helps keep hybrid microcircuits cool
|
|
|
|
15 |
4 |
p. 60
|
artikel
|
| 47 |
Thermal characteristics of a hybrid microcircuit
|
|
|
|
15 |
4 |
p. 59
|
artikel
|
| 48 |
The use of hybrid microelectronics in the construction of ionselective electrodes
|
|
|
|
15 |
4 |
p. 60
|
artikel
|
| 49 |
Thin-film systems for hybrid circuits—produced by plasmatron atomizers
|
|
|
|
15 |
4 |
p. 60
|
artikel
|
| 50 |
Time-resolved optical transmission during pulsed-laser annealing of ion-implanted amorphous silico-on-sapphire
|
|
|
|
15 |
4 |
p. 63
|
artikel
|
| 51 |
VLSI metallization using aluminium and its alloys. Part I
|
|
|
|
15 |
4 |
p. 62
|
artikel
|
| 52 |
VLSI metallization using aluminium and its alloys. Part II
|
|
|
|
15 |
4 |
p. 62
|
artikel
|
| 53 |
Wafer processing in the early 1980s
|
|
|
|
15 |
4 |
p. 63
|
artikel
|
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