nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
A burst-mode receiver with quick response and high consecutive identical digit tolerance for advanced intra-vehicle optical networks
|
Inoue, Toshiyuki |
|
|
145 |
C |
p. |
artikel |
2 |
A comparative study of work function variations in III-V heterojunction and homojunction tunnel field-effect transistors
|
Guan, Yunhe |
|
|
145 |
C |
p. |
artikel |
3 |
A complementary ternary inverter based on the line tunneling field effect transistors
|
Lu, Bin |
|
|
145 |
C |
p. |
artikel |
4 |
A design method of bipolar junction transistor for high-precision remote temperature sensing
|
Wei, Linfeng |
|
|
145 |
C |
p. |
artikel |
5 |
A Fractional-N DTC-based ADPLL using path-select multi-delay line TDC and true fractional division technique
|
Jin, Zirui |
|
|
145 |
C |
p. |
artikel |
6 |
A 4–20 GHz switched-line true time delay in GaAs pHEMT technology
|
Wang, Jie |
|
|
145 |
C |
p. |
artikel |
7 |
A high gain-flatness C-band variable gain LNA in a 0.25 μm GaAs pHEMT process
|
Sun, Dengbao |
|
|
145 |
C |
p. |
artikel |
8 |
A 5 kHz-BW 18-bit zoom ADC with gain-enhanced CLS-assisted FIA
|
Xu, Wenjia |
|
|
145 |
C |
p. |
artikel |
9 |
A low-noise class AB amplifier fabricated by 180 nm BCD process for servo circuit of quartz flexible accelerometer
|
Li, Peipei |
|
|
145 |
C |
p. |
artikel |
10 |
A 1.5MSPS, 120 dB SFDR, ±10 V input range SAR ADC with sampling nonlinearity compensation and inherent 2-b coarse ADC for MSBs decision
|
Luo, Hongrui |
|
|
145 |
C |
p. |
artikel |
11 |
An evenly-spaced-phase all-digital DLL using dual-loop SAR control
|
Chen, Sijie |
|
|
145 |
C |
p. |
artikel |
12 |
A 65 nm CMOS rail-to-rail auto-zero operational amplifier based on charge pump internal power supply
|
Zhang, Jun-an |
|
|
145 |
C |
p. |
artikel |
13 |
An optimized EEGNet processor for low-power and real-time EEG classification in wearable brain–computer interfaces
|
Cao, Jiacheng |
|
|
145 |
C |
p. |
artikel |
14 |
A novel recessed-source negative capacitance gate-all-around tunneling field effect transistor for low-power applications
|
Wei, Weijie |
|
|
145 |
C |
p. |
artikel |
15 |
A 9T-SRAM based computing-in-memory with redundant unit and digital operation for boolean logic and MAC
|
Li, Xin |
|
|
145 |
C |
p. |
artikel |
16 |
A 28.9–38.8 μW dual-mode 10-bit column parallel single-slope ADC with minimum voltage feedback for CMOS image sensors
|
Yuan, Shengping |
|
|
145 |
C |
p. |
artikel |
17 |
A 55 μ W 2.4 GHz wake-up receiver with offset-based peak detection achieving −90dBm sensitivity for IoT applications
|
Zhao, Yan |
|
|
145 |
C |
p. |
artikel |
18 |
Editorial Board
|
|
|
|
145 |
C |
p. |
artikel |
19 |
Effect of ambipolarity suppression in PNPN TFET with dopant segregated Schottky-drain technique
|
Anam, Aadil |
|
|
145 |
C |
p. |
artikel |
20 |
GaN-based wide-band high-efficiency power amplifier with multi harmonic resonance
|
Zaid, Mohammad |
|
|
145 |
C |
p. |
artikel |
21 |
High throughput dynamic dual entropy source true random number generator based on FPGA
|
Chen, Yu |
|
|
145 |
C |
p. |
artikel |
22 |
Logic cloning based approximate signed multiplication circuits for FPGA
|
Kulkarni, Abhinav |
|
|
145 |
C |
p. |
artikel |
23 |
Non-fourier phonon heat transport in graphene nanoribbon field effect transistors based on modified phonon hydrodynamic lattice Boltzmann method
|
Rao, Xixin |
|
|
145 |
C |
p. |
artikel |
24 |
Optimization of junctionless stacked nanosheet FET – RF stability perspective
|
M, Balasubbareddy |
|
|
145 |
C |
p. |
artikel |
25 |
Performance investigation of different low power SRAM cell topologies using stacked-channel tri-gate junctionless FinFET
|
Singh, Devenderpal |
|
|
145 |
C |
p. |
artikel |
26 |
Real-time channel temperature monitoring of p-GaN HEMTs based on gate leakage current
|
Yin, Luqiao |
|
|
145 |
C |
p. |
artikel |
27 |
Study on the impact of the resonant cavity and lateral acoustic edge reflector for AlSc0.095N-based S0 mode Lamb-wave resonators
|
Zhao, Jicong |
|
|
145 |
C |
p. |
artikel |