| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Accurate single section model of charge coupled devices for computer aided design
|
Kumar, U.
|
|
|
14 |
4 |
p. 51-56
|
artikel
|
| 2 |
A ‘low-risk’ design approach to silicon integrated circuits
|
Prazic, B.D.
|
|
|
14 |
4 |
p. 11-19
|
artikel
|
| 3 |
A moisture protection screening test for hybrid circuit encapsulants
|
|
|
|
14 |
4 |
p. 62-63
|
artikel
|
| 4 |
Anomalous thermoelastic effect in silicon
|
|
|
|
14 |
4 |
p. 64
|
artikel
|
| 5 |
A simple NMOS constant voltage and current source
|
Haskard, M.R.
|
|
|
14 |
4 |
p. 31-37
|
artikel
|
| 6 |
Book Review
|
Krejcik, M.
|
|
|
14 |
4 |
p. 59
|
artikel
|
| 7 |
Book Review
|
Krejcik, M.
|
|
|
14 |
4 |
p. 59
|
artikel
|
| 8 |
Book Review
|
Krejcik, M.
|
|
|
14 |
4 |
p. 60
|
artikel
|
| 9 |
Book Review
|
Stoddart, R.
|
|
|
14 |
4 |
p. 60
|
artikel
|
| 10 |
Breakdown voltage of discrete capacitors under single-pulse conditions
|
|
|
|
14 |
4 |
p. 63
|
artikel
|
| 11 |
CF4/O2 plasma accelerated aluminium metallisation corrosion in plastic encapsulated ICs in the presence of contaminated die attach epoxies
|
|
|
|
14 |
4 |
p. 64
|
artikel
|
| 12 |
C-MOS inspires the best chips yet for computer, consumer and communication applications
|
|
|
|
14 |
4 |
p. 61
|
artikel
|
| 13 |
C-MOS PROM density hits 16-K
|
|
|
|
14 |
4 |
p. 62
|
artikel
|
| 14 |
Combination of thick film dielectric/thin film conductor for fine pattern formation of multi-layer substrate
|
|
|
|
14 |
4 |
p. 63
|
artikel
|
| 15 |
Considerations in formulation and manufacturing of thick film inks
|
|
|
|
14 |
4 |
p. 64
|
artikel
|
| 16 |
Devices and circuits for bipolar (V) LSI
|
|
|
|
14 |
4 |
p. 61
|
artikel
|
| 17 |
Editorial
|
Butcher, John
|
|
|
14 |
4 |
p. 3
|
artikel
|
| 18 |
Electroless nickel resistors formed on IMST substrate
|
|
|
|
14 |
4 |
p. 62
|
artikel
|
| 19 |
Experimental study of two-terminal distributed parameter impedance networks
|
Ahmad, S.
|
|
|
14 |
4 |
p. 45-49
|
artikel
|
| 20 |
Failure mechanisms that cause high electrical leakage in multilayer ceramic capacitors
|
|
|
|
14 |
4 |
p. 63
|
artikel
|
| 21 |
Gallium arsenide integrated circuits technologies
|
|
|
|
14 |
4 |
p. 61
|
artikel
|
| 22 |
Gate-voltage limitations for thin channel MIS and Schottky buried-channel charge-coupled devices
|
|
|
|
14 |
4 |
p. 63-64
|
artikel
|
| 23 |
Gold conductor pastes for high density circuit
|
|
|
|
14 |
4 |
p. 64
|
artikel
|
| 24 |
High frequency magnetic bubble devices
|
|
|
|
14 |
4 |
p. 62
|
artikel
|
| 25 |
Latent B-radiation damage in hermetically sealed NMOS devices
|
|
|
|
14 |
4 |
p. 64
|
artikel
|
| 26 |
Magnetic bubble propagation for the dual conductor current-access test circuit
|
|
|
|
14 |
4 |
p. 61
|
artikel
|
| 27 |
Modified CMOS inverters
|
Dokić, Branko
|
|
|
14 |
4 |
p. 39-44
|
artikel
|
| 28 |
Multi-MOS structure speeds layout of VLSI chips
|
|
|
|
14 |
4 |
p. 61
|
artikel
|
| 29 |
Preparation and some magnetic properties of amorphous rare earth-transition metal films with perpendicular anistropy for bubble memories
|
|
|
|
14 |
4 |
p. 62
|
artikel
|
| 30 |
Preparation and some magnetic properties of amorphous rare earth-transition metal films with perpendicular anistropy for bubble memory
|
|
|
|
14 |
4 |
p. 62
|
artikel
|
| 31 |
Review of ion-implanted bubble devices
|
|
|
|
14 |
4 |
p. 61
|
artikel
|
| 32 |
Single-chip 1200 bits/sec modem filters
|
Gregorian, R.
|
|
|
14 |
4 |
p. 21-29
|
artikel
|
| 33 |
The reflow attachment and reliability testing of ceramic chip carriers
|
|
|
|
14 |
4 |
p. 63
|
artikel
|
| 34 |
The use of silicone RTV rubber for alpha particle protection on silicon integrated circuits
|
|
|
|
14 |
4 |
p. 64
|
artikel
|
| 35 |
Thick film circuits: present state and future development
|
|
|
|
14 |
4 |
p. 62
|
artikel
|
| 36 |
Thick-film laser trimming principles, techniques and recommendations
|
|
|
|
14 |
4 |
p. 63
|
artikel
|
| 37 |
Trends in gate array technology
|
Hardage, C.
|
|
|
14 |
4 |
p. 5-10
|
artikel
|
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