| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A bibliography on silicon nitride films
|
|
|
|
13 |
6 |
p. 41
|
artikel
|
| 2 |
A 2400-bit/s microprocessor-based modem
|
|
|
|
13 |
6 |
p. 40
|
artikel
|
| 3 |
A CMOS process for VLSI instrumentation
|
Yi, Tong Qin
|
|
|
13 |
6 |
p. 29-32
|
artikel
|
| 4 |
A computer-aided design system for hybrid circuits
|
|
|
|
13 |
6 |
p. 40
|
artikel
|
| 5 |
A low-leakage-current CdSe thin-film transistor
|
|
|
|
13 |
6 |
p. 41
|
artikel
|
| 6 |
A new EPR centre due to dislocations in phosphorous doped silicon
|
|
|
|
13 |
6 |
p. 42
|
artikel
|
| 7 |
A notation for designing restoring logic circuitry in CMOS
|
Rem, Martin
|
|
|
13 |
6 |
p. 5-10
|
artikel
|
| 8 |
A novel approach for higher yield in thick-film resistors
|
|
|
|
13 |
6 |
p. 42
|
artikel
|
| 9 |
A physical interpretation of dispersive transport in disordered semiconductors
|
|
|
|
13 |
6 |
p. 42
|
artikel
|
| 10 |
Book Review
|
Krejcik, Milos
|
|
|
13 |
6 |
p. 38
|
artikel
|
| 11 |
Book Review
|
Daruvala, D.J.
|
|
|
13 |
6 |
p. 38
|
artikel
|
| 12 |
Calculation of the self-induced field profile produced by steady-state distribution of signal carriers in charge-coupled device
|
|
|
|
13 |
6 |
p. 41
|
artikel
|
| 13 |
Can velocity overshoot or ballistic transport be efficient in submicron devices?
|
Institut d'Electronique Fondamentale,
|
|
|
13 |
6 |
p. 18-22
|
artikel
|
| 14 |
Classified index to articles — Vols. 12 & 13 inclusive
|
|
|
|
13 |
6 |
p. 43-44
|
artikel
|
| 15 |
CMOS a-d converter interfaces easily with many microprocessors
|
|
|
|
13 |
6 |
p. 39
|
artikel
|
| 16 |
Control chip and driver program unlock magnetic-bubble potential
|
|
|
|
13 |
6 |
p. 39-40
|
artikel
|
| 17 |
Creating the integrated engineering design office
|
Jones, Harvey
|
|
|
13 |
6 |
p. 15-17
|
artikel
|
| 18 |
3-d MOSFETs shrink statie RAM cells and analog circuit blocks
|
|
|
|
13 |
6 |
p. 39
|
artikel
|
| 19 |
E-beam machines paired with optics pare wafer costs
|
|
|
|
13 |
6 |
p. 42
|
artikel
|
| 20 |
Editorial
|
Butcher, John
|
|
|
13 |
6 |
p. 3-4
|
artikel
|
| 21 |
Effect of device reliability on memory reliability
|
|
|
|
13 |
6 |
p. 40
|
artikel
|
| 22 |
Electron beam finds memory faults, reconfigures chips
|
|
|
|
13 |
6 |
p. 42
|
artikel
|
| 23 |
ESR studies of thermally oxidised silicon wafers
|
|
|
|
13 |
6 |
p. 42
|
artikel
|
| 24 |
Evaluation of CMOS transistor related design rules
|
|
|
|
13 |
6 |
p. 39
|
artikel
|
| 25 |
Evaluation of inhomogeneous resistive layers by a four point method
|
|
|
|
13 |
6 |
p. 42
|
artikel
|
| 26 |
Face-down TAB for hybrids
|
|
|
|
13 |
6 |
p. 40
|
artikel
|
| 27 |
Fast on-chip memory extends 16-bit family's reach
|
|
|
|
13 |
6 |
p. 39
|
artikel
|
| 28 |
Field enhanced carrier generation in MOS-capacitors containing defects
|
|
|
|
13 |
6 |
p. 41
|
artikel
|
| 29 |
Functional and in-circuit testing team up to tackle VLSI in the '80s
|
|
|
|
13 |
6 |
p. 42
|
artikel
|
| 30 |
Growth and characterisation of large diameter undoped semi-insulating GaAs for direct ion implanted FET technology
|
|
|
|
13 |
6 |
p. 42
|
artikel
|
| 31 |
Implant gettering and ion beam detection of generation impurities in silicon
|
Golja, B.
|
|
|
13 |
6 |
p. 23-28
|
artikel
|
| 32 |
Ion implantation for GaAs field-effect transistors and integrated circuits
|
|
|
|
13 |
6 |
p. 41
|
artikel
|
| 33 |
Is epitaxy right for MOS?
|
|
|
|
13 |
6 |
p. 39
|
artikel
|
| 34 |
Maximising a 64-K RAMs operating margins
|
|
|
|
13 |
6 |
p. 40
|
artikel
|
| 35 |
Minority carrier injection and storage into a heavily doped emitter. Approximate solution for auger recombination
|
|
|
|
13 |
6 |
p. 41
|
artikel
|
| 36 |
Modified SEM depicts operation of dense chips
|
|
|
|
13 |
6 |
p. 42
|
artikel
|
| 37 |
Monolithically integrated circuits on gallium-arsenide basis, part 2
|
|
|
|
13 |
6 |
p. 41
|
artikel
|
| 38 |
Monolithic integrated filter — an overview
|
|
|
|
13 |
6 |
p. 41
|
artikel
|
| 39 |
MOS threshold voltage monitoring
|
|
|
|
13 |
6 |
p. 41
|
artikel
|
| 40 |
New approach to thick-film resistor design
|
|
|
|
13 |
6 |
p. 41
|
artikel
|
| 41 |
Optimal performance of HMOS VLSI circuits
|
Kadir, H. Al Abdul
|
|
|
13 |
6 |
p. 11-14
|
artikel
|
| 42 |
Origins and mimimisation of defects in sputtered thin-films
|
|
|
|
13 |
6 |
p. 42
|
artikel
|
| 43 |
Plasma planarisation
|
|
|
|
13 |
6 |
p. 42
|
artikel
|
| 44 |
Rapid determination of concentration and mobility profiles on thin GaAs layers
|
|
|
|
13 |
6 |
p. 39
|
artikel
|
| 45 |
Strain sensitivity of thick-film resistors
|
|
|
|
13 |
6 |
p. 40
|
artikel
|
| 46 |
Strip architecture fits microcomputer into less silicon
|
|
|
|
13 |
6 |
p. 40
|
artikel
|
| 47 |
Surface enhanced and disorder induced Raman scattering from silver films
|
|
|
|
13 |
6 |
p. 41
|
artikel
|
| 48 |
Survey of the international state of special LSI circuits for the PCM technique
|
|
|
|
13 |
6 |
p. 39
|
artikel
|
| 49 |
The effect of boron redistribution on the theshold voltage of n-channel MOS transistors in CMOS structures
|
|
|
|
13 |
6 |
p. 41-42
|
artikel
|
| 50 |
The performance of DSW machines for VLSI research
|
Stevenson, J.T.M.
|
|
|
13 |
6 |
p. 33-37
|
artikel
|
| 51 |
Thermal transients in electronic packages
|
|
|
|
13 |
6 |
p. 40-41
|
artikel
|
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