| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Advances in reduced pressure silicon epitaxy
|
|
|
|
12 |
4 |
p. 42
|
artikel
|
| 2 |
A high speed 64×4 bit 100 K-compatible ECL-RAM with 6 NS access time
|
|
|
|
12 |
4 |
p. 40
|
artikel
|
| 3 |
Aluminium alloy as an interconnecting material in the fabrication of integrated circuits
|
|
|
|
12 |
4 |
p. 42
|
artikel
|
| 4 |
An influence of the rate of epitaxial growth on physical properties of gallium nitride
|
|
|
|
12 |
4 |
p. 42
|
artikel
|
| 5 |
An integrated LSI design aids system
|
Martin, G.
|
|
|
12 |
4 |
p. 18-22
|
artikel
|
| 6 |
An overview of the electronics industry in Europe
|
Mackintosh, I.M.
|
|
|
12 |
4 |
p. 33-38
|
artikel
|
| 7 |
A review of self-scanned image sensors
|
Beynon, J.D.E.
|
|
|
12 |
4 |
p. 11-17
|
artikel
|
| 8 |
A ULA is more than silicon
|
|
|
|
12 |
4 |
p. 40
|
artikel
|
| 9 |
Book Review
|
Jowett, Charles
|
|
|
12 |
4 |
p. 43
|
artikel
|
| 10 |
Book Review
|
Tillotson, John
|
|
|
12 |
4 |
p. 44
|
artikel
|
| 11 |
Book Review
|
Matthews, R.B.
|
|
|
12 |
4 |
p. 44
|
artikel
|
| 12 |
Book Review
|
Pitt, K.E.G.
|
|
|
12 |
4 |
p. 44
|
artikel
|
| 13 |
Book Review
|
Jowett, Charles
|
|
|
12 |
4 |
p. 43-44
|
artikel
|
| 14 |
Circuit-board packing considerations for optimum utilisation of chip carriers
|
|
|
|
12 |
4 |
p. 40
|
artikel
|
| 15 |
C-MOS multiplier speeds task for microprocessors
|
|
|
|
12 |
4 |
p. 40
|
artikel
|
| 16 |
Design aspects and reliability of a synchroniser made in MOS technology
|
|
|
|
12 |
4 |
p. 40
|
artikel
|
| 17 |
Determination of existing stress in silicon films on sapphire substrate using raman spectroscopy
|
|
|
|
12 |
4 |
p. 42
|
artikel
|
| 18 |
Development of the thick-film capacitor and its application for hybrid circuit modules
|
|
|
|
12 |
4 |
p. 41
|
artikel
|
| 19 |
Editorial
|
Butcher, John
|
|
|
12 |
4 |
p. 3
|
artikel
|
| 20 |
Electronics — Strategies for failure
|
Heikes, R.R.
|
|
|
12 |
4 |
p. 30-32
|
artikel
|
| 21 |
Gate-voltage limitations for thin channel MIS and schottky buried-channel charge-coupled devices
|
Swart, P.L.
|
|
|
12 |
4 |
p. 5-10
|
artikel
|
| 22 |
Gold/chromium metallisations for electronic devices
|
|
|
|
12 |
4 |
p. 42
|
artikel
|
| 23 |
High density uncommitted arrays using an advanced CMOS technology
|
|
|
|
12 |
4 |
p. 40
|
artikel
|
| 24 |
IBM multichip multilayer ceramic modules for LSI chips — design for performance and density
|
|
|
|
12 |
4 |
p. 40
|
artikel
|
| 25 |
Influence of the substrate on the electrical properties of thick-film resistors
|
|
|
|
12 |
4 |
p. 41
|
artikel
|
| 26 |
Large scale digital hybrid microcircuits for new military systems
|
|
|
|
12 |
4 |
p. 41
|
artikel
|
| 27 |
Laser annealing to round the edges of silicon structures
|
|
|
|
12 |
4 |
p. 42
|
artikel
|
| 28 |
Methods, equipment and materials for the wire contacting of semiconductor chips
|
|
|
|
12 |
4 |
p. 42
|
artikel
|
| 29 |
Microcrack detection in silicon crystals with an ultrasonic sonoprobe
|
|
|
|
12 |
4 |
p. 42
|
artikel
|
| 30 |
Paraconductivity of Ge-covered tin films
|
|
|
|
12 |
4 |
p. 42
|
artikel
|
| 31 |
Programmable components: the shape of VLSI to come
|
|
|
|
12 |
4 |
p. 39
|
artikel
|
| 32 |
Research and development of IC technology in Japan
|
|
|
|
12 |
4 |
p. 39
|
artikel
|
| 33 |
Reversible breakdown voltage collapse in silicon gate-controlled diodes
|
|
|
|
12 |
4 |
p. 41
|
artikel
|
| 34 |
Silver migration in thick film conductors and chip attachment resins
|
Coleman, M.V.
|
|
|
12 |
4 |
p. 23-29
|
artikel
|
| 35 |
Simple process propels bipolar PROMs to 16-K density and beyond
|
|
|
|
12 |
4 |
p. 40
|
artikel
|
| 36 |
Some problems and possible solutions for hybrid microcircuit reliability
|
|
|
|
12 |
4 |
p. 41
|
artikel
|
| 37 |
Spacial resolution of SEM-EBIC images
|
|
|
|
12 |
4 |
p. 42
|
artikel
|
| 38 |
Swirl defects in silicon single crystals
|
|
|
|
12 |
4 |
p. 42
|
artikel
|
| 39 |
TCR control of Ni/Cr resistors
|
|
|
|
12 |
4 |
p. 41
|
artikel
|
| 40 |
Temperature dependence of open-circuit photovoltage of a back-surface field semiconductor junction
|
|
|
|
12 |
4 |
p. 42
|
artikel
|
| 41 |
Thermal studies of a plastic dual-in-line package
|
|
|
|
12 |
4 |
p. 40
|
artikel
|
| 42 |
The role of hybrids in LSI systems
|
|
|
|
12 |
4 |
p. 41
|
artikel
|
| 43 |
VLSI directions and impact
|
|
|
|
12 |
4 |
p. 40
|
artikel
|
| 44 |
VLSI/LSI circuit functions: their challenges, rewards and problems
|
|
|
|
12 |
4 |
p. 39
|
artikel
|
| 45 |
VLSI with a vengeance
|
|
|
|
12 |
4 |
p. 39
|
artikel
|
| 46 |
Wafer stepper steps up yield and resolution in IC lithography
|
|
|
|
12 |
4 |
p. 42
|
artikel
|
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