| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
An approach to computer aided design of multilayer hybrids, Part I
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|
12 |
2 |
p. 38
|
artikel
|
| 2 |
An approach to computer aided design of multilayer hybrids, Part II
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|
12 |
2 |
p. 38
|
artikel
|
| 3 |
A new approach to high volume hermetic hybrid packaging
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12 |
2 |
p. 37
|
artikel
|
| 4 |
A novel approach for higher yield in thick-film resistors
|
Matkari, A.K.
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12 |
2 |
p. 32-34
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artikel
|
| 5 |
Application and reliability of copper plated through hole printed wiring boards
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12 |
2 |
p. 37-38
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artikel
|
| 6 |
Applications of auger and photoelectron spectroscopy in characterising IC materials
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12 |
2 |
p. 40
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artikel
|
| 7 |
A practical air-fireable base metal resistor system
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12 |
2 |
p. 37
|
artikel
|
| 8 |
A thin-film transistor with polytetrafluoroethylene as insulator
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12 |
2 |
p. 39
|
artikel
|
| 9 |
A transmission-line analog simulating thin-film distributed-RC elements
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12 |
2 |
p. 38-39
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artikel
|
| 10 |
Book Review
|
Anand, K.V.
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12 |
2 |
p. 43
|
artikel
|
| 11 |
Book Review
|
Webb, N.G.
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12 |
2 |
p. 43
|
artikel
|
| 12 |
Book Review
|
Matthews, R.B.
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|
12 |
2 |
p. 43-44
|
artikel
|
| 13 |
Book Review
|
Godfrey, John
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12 |
2 |
p. 44
|
artikel
|
| 14 |
Bubble memory family extends to megabit size
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12 |
2 |
p. 37
|
artikel
|
| 15 |
Bumped tape-automated bonding (BTAB) practical application guidelines
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12 |
2 |
p. 38
|
artikel
|
| 16 |
Charge neutrality and the internal electric field produced by impurity diffusion
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|
12 |
2 |
p. 40
|
artikel
|
| 17 |
C-MOS picks up ground
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|
12 |
2 |
p. 36
|
artikel
|
| 18 |
CMOS, present and future
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12 |
2 |
p. 36
|
artikel
|
| 19 |
Conductance noise investigations on symmetrical planar resistors with finite contacts
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12 |
2 |
p. 38
|
artikel
|
| 20 |
Contribution to range statistics of Boron implanted into Silicon at high energies
|
Lutsch, A.G.K.
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|
12 |
2 |
p. 25-29
|
artikel
|
| 21 |
CVD films for interlayer dielectrics
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12 |
2 |
p. 40
|
artikel
|
| 22 |
Dependence of the saturisation intensity of p-type germanium on impurity concentration and residual absorption at 10.59 μm
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|
12 |
2 |
p. 39
|
artikel
|
| 23 |
Description and use of electron beam accessed memory systems
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|
12 |
2 |
p. 41
|
artikel
|
| 24 |
Drawing the lines for VLSI
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|
12 |
2 |
p. 36
|
artikel
|
| 25 |
Editorial
|
Butcher, John
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12 |
2 |
p. 3
|
artikel
|
| 26 |
Electrical properties of anodic aluminium-oxide films
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12 |
2 |
p. 39
|
artikel
|
| 27 |
Fabrication of a six-level multilayer structure
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12 |
2 |
p. 37
|
artikel
|
| 28 |
Geometry effects of small MOSFET devices
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12 |
2 |
p. 36
|
artikel
|
| 29 |
Heat exchange optimisation technique for high-power hybrid IC's
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12 |
2 |
p. 37
|
artikel
|
| 30 |
High-resolution switched-capacitor D/A converter
|
Gregorian, Roubik
|
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|
12 |
2 |
p. 10-13
|
artikel
|
| 31 |
High voltage stable resistors on multilayer dielectric
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|
12 |
2 |
p. 39
|
artikel
|
| 32 |
How a new generation of microprocessors supports modular programming in high-level languages
|
Hartman, Alfred C.
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|
12 |
2 |
p. 14-20
|
artikel
|
| 33 |
IC combines optical sensor, trigger
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|
12 |
2 |
p. 37
|
artikel
|
| 34 |
Introduction to chamical vapour deposition
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12 |
2 |
p. 40
|
artikel
|
| 35 |
Investigations into the most favourable application of projection lithography
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12 |
2 |
p. 40
|
artikel
|
| 36 |
J-K flip-flop for C-MOS integrated circuits
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|
12 |
2 |
p. 36
|
artikel
|
| 37 |
Limit values an properties of bipolar and MOS transistors for highest integrated (VLSI) switching circuits
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|
12 |
2 |
p. 36-37
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artikel
|
| 38 |
LSI ready to make a mark on packet-switching networks
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12 |
2 |
p. 36
|
artikel
|
| 39 |
Microcomputer can stand alone or join forces with other chips
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12 |
2 |
p. 37
|
artikel
|
| 40 |
Microcomputer grants wishes
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12 |
2 |
p. 37
|
artikel
|
| 41 |
Microprocessor implementation of the Kalman filter
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12 |
2 |
p. 41
|
artikel
|
| 42 |
Microprocessors: from characterisation to production
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12 |
2 |
p. 37
|
artikel
|
| 43 |
Microprogrammable digital filter implementation using bipolar microprocessors
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12 |
2 |
p. 41
|
artikel
|
| 44 |
On the behaviour of buried oxygen implanted layers in highly doped GaAs
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12 |
2 |
p. 39
|
artikel
|
| 45 |
Part II: LSI circuit simplifies packet-network connection
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12 |
2 |
p. 36
|
artikel
|
| 46 |
Pinhole elimination in hard masks
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12 |
2 |
p. 41
|
artikel
|
| 47 |
Positron annihilation in boron-implanted N-type silicon
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|
12 |
2 |
p. 40
|
artikel
|
| 48 |
Potential distribution and multi-terminal DC resistance computations for LSI technology
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|
12 |
2 |
p. 41
|
artikel
|
| 49 |
Preliminary studies of a thick-film hybrid base coupled logic (BCL) circuit
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|
12 |
2 |
p. 38
|
artikel
|
| 50 |
Radial distortion in cambered wafers
|
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|
12 |
2 |
p. 40
|
artikel
|
| 51 |
Reliability of clip-on terminals soldered to Ta-Ta2N-NiCr-Pd-Au thin-films
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|
12 |
2 |
p. 39
|
artikel
|
| 52 |
Reliable thyristors and triacs in TO-220 plastic packages
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|
12 |
2 |
p. 39
|
artikel
|
| 53 |
Review and analysis of laser annealing
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|
12 |
2 |
p. 41
|
artikel
|
| 54 |
Simple techniques for making patterns of tin-oxide films
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|
12 |
2 |
p. 40
|
artikel
|
| 55 |
Simulated inductances using current conveyors and their applications
|
Pal, K.
|
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|
12 |
2 |
p. 30-31
|
artikel
|
| 56 |
Single IC emits multiple signals
|
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|
12 |
2 |
p. 37
|
artikel
|
| 57 |
Software aids to microcomputer system reliability
|
Wood, A.R.
|
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|
12 |
2 |
p. 21-24
|
artikel
|
| 58 |
Some problems and possible solution for hybrid microcircuit reliability
|
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|
12 |
2 |
p. 38
|
artikel
|
| 59 |
Some problems and possible solutions for hybrid microcircuit reliability
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|
12 |
2 |
p. 38
|
artikel
|
| 60 |
Sputtering system has high yield
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|
12 |
2 |
p. 40
|
artikel
|
| 61 |
Survey of computer-aided electrical analysis of integrated circuit interconnections
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|
12 |
2 |
p. 40
|
artikel
|
| 62 |
The new microelectronic processing technology: a review of the state-of-the-art
|
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|
12 |
2 |
p. 41
|
artikel
|
| 63 |
The role of transport in very small devices for VLSI
|
Ferry, D.K.
|
|
|
12 |
2 |
p. 5-9
|
artikel
|
| 64 |
Thin-film devices on silicon chip withstand up to 500°C
|
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|
12 |
2 |
p. 37
|
artikel
|
| 65 |
Time resolved photoluminescence near the “band gap” in amorphous silicon
|
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|
12 |
2 |
p. 39
|
artikel
|
| 66 |
Topological and experimental analysis of stationary behaviour of transferred-electron devices with non-uniform geometry
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|
12 |
2 |
p. 39
|
artikel
|
| 67 |
Ultraviolet photoelectron investigation of Si (111)/Au interface at high temperatures
|
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|
12 |
2 |
p. 39
|
artikel
|
| 68 |
VLSI tester rushes along at 100 MHz
|
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|
12 |
2 |
p. 41
|
artikel
|
| 69 |
5-volt-only, non-volatile RAM owes it all to polysilicon
|
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|
12 |
2 |
p. 37
|
artikel
|
| 70 |
Xe+ ion beam cratering of Cu-Al thin-film multistructure
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|
12 |
2 |
p. 40
|
artikel
|
| 71 |
X-ray lithography
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12 |
2 |
p. 41
|
artikel
|
| 72 |
X-ray lithography unit gains speed by printing six wafers at a time
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12 |
2 |
p. 41
|
artikel
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