| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Advances in testing LSI populated boards
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12 |
1 |
p. 42-43
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artikel
|
| 2 |
Aging of solder connection to Ti-Pd-Au films
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12 |
1 |
p. 42
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artikel
|
| 3 |
A low-cost thin-film mocrocircuit process
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12 |
1 |
p. 41
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artikel
|
| 4 |
Analysis of the effects of mechanical stress on the properties of p-channel MOS structures. Part I. Choice of the theoretical model. The effect of stress on the valence band structure in silicon
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12 |
1 |
p. 42
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artikel
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| 5 |
Annealing of ion implanted layers by laser beam
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12 |
1 |
p. 41
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artikel
|
| 6 |
Application of the ZBA-10 electron-beam exposure system in the production of precision photomasks with pattern element dimensions in the submicron range
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12 |
1 |
p. 41
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artikel
|
| 7 |
Applied Circuit Theory (Matrix and Computer Methods)
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12 |
1 |
p. 44
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artikel
|
| 8 |
Ar-ion implant damage gettering of generation impurities in silicon employing voltage ramping and nitrogen back-scattering
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12 |
1 |
p. 43
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artikel
|
| 9 |
A simple method of analysing distributed RC notch-filters
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Ahmad, S.
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12 |
1 |
p. 18-22
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artikel
|
| 10 |
A user's performance profile of a thick-film resistor system
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12 |
1 |
p. 39
|
artikel
|
| 11 |
Basis sets for the study of point defects in solids using Green's-function methods
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12 |
1 |
p. 43
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artikel
|
| 12 |
Book Review
|
Mander, H.F.
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12 |
1 |
p. 44
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artikel
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| 13 |
Coding and decoding of Wafers
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12 |
1 |
p. 40
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artikel
|
| 14 |
Compensation for inefficiency in charge transfer device transversal filters
|
Dutta Roy, S.C.
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12 |
1 |
p. 5-7
|
artikel
|
| 15 |
Computer aids for reliability prediction and spares provisioning
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12 |
1 |
p. 43
|
artikel
|
| 16 |
Design considerations for molecular beam epitaxy systems
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12 |
1 |
p. 40
|
artikel
|
| 17 |
Detection and identification of potential impurities activated by neutron irradiation of Czochraiski silicon
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12 |
1 |
p. 40
|
artikel
|
| 18 |
Digital communication devices
|
Williams, Eric Ll.
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12 |
1 |
p. 8-17
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artikel
|
| 19 |
Direct wafer exposure
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12 |
1 |
p. 41
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artikel
|
| 20 |
Editorial
|
Butcher, John
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|
12 |
1 |
p. 3
|
artikel
|
| 21 |
Editorial Board
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|
12 |
1 |
p. 1
|
artikel
|
| 22 |
Effect of structural defects on degradation of diffused GaAs LED's
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12 |
1 |
p. 40
|
artikel
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| 23 |
Electron-beam-induced-current investigations on MOS and MNOS devices
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12 |
1 |
p. 43
|
artikel
|
| 24 |
Experience gathered with the application of the special-type ZRM-12 scanning electron microscope in the semiconductor industry
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12 |
1 |
p. 42
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artikel
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| 25 |
Experimental verification of the model of silicon epitaxy
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12 |
1 |
p. 42
|
artikel
|
| 26 |
Innovations which reduce costs and turn around time of integrated circuit production for small electronic engineering companies
|
Poole, K.F.
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12 |
1 |
p. 33-38
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artikel
|
| 27 |
Investigations of gold surface-state energy levels in gold-doped MOS transistors
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12 |
1 |
p. 41
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artikel
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| 28 |
Memory testing: characterisation, timing and patterns
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12 |
1 |
p. 43
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artikel
|
| 29 |
Microfiltration of high purity deionised water
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12 |
1 |
p. 41
|
artikel
|
| 30 |
Micromechanical membrane switches on silicon
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12 |
1 |
p. 43
|
artikel
|
| 31 |
Model of 1/f noise in ion-implanted resistors as a function of the resistance, determined by a reverse bias voltage
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12 |
1 |
p. 43
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artikel
|
| 32 |
Monemolecular resists: a new class of high resolution resists for electron beam microlithography
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12 |
1 |
p. 42
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artikel
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| 33 |
Optical switching in metal tunnel-insulator n-p + silicon devices
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12 |
1 |
p. 43
|
artikel
|
| 34 |
Radiation hardened MOS technology
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12 |
1 |
p. 42
|
artikel
|
| 35 |
Recent advances in liquid crystal materials
|
Sage, I.
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12 |
1 |
p. 30-32
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artikel
|
| 36 |
Semiconductor superlattices by MBE and their characterisation
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12 |
1 |
p. 40
|
artikel
|
| 37 |
Semiconductor surface and crystal physics studies by MBE
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12 |
1 |
p. 41
|
artikel
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| 38 |
Silicon epitaxial films of submicrometer thickness
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12 |
1 |
p. 39
|
artikel
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| 39 |
Silicon epitaxy
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12 |
1 |
p. 42
|
artikel
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| 40 |
Simplified relations for determining flat-band capacitance and impurity concentration in MOS structures
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12 |
1 |
p. 39
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artikel
|
| 41 |
Solar-grade silicon by directional solidification in carbon crucibles
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12 |
1 |
p. 40
|
artikel
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| 42 |
Some annealing properties of low-energy-antimony-implanted silicon resistors
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12 |
1 |
p. 39-40
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artikel
|
| 43 |
Standardisation
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|
12 |
1 |
p. 40
|
artikel
|
| 44 |
Study of the surface properties of thermally oxidised silicon using surface acoustic wave attenuation
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12 |
1 |
p. 42
|
artikel
|
| 45 |
Surface-acoustic-wave filters prove versatile in vhf applications
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12 |
1 |
p. 43
|
artikel
|
| 46 |
Surface state study of ion implanted GaAs (Se) from photoreflectance
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12 |
1 |
p. 41
|
artikel
|
| 47 |
Temperature aging of external connections condensation soldered to Ti-Pol-Au thin films
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12 |
1 |
p. 41
|
artikel
|
| 48 |
The adherence of chromium and titanium films deposited on alumina, quartx, and glass — testing and improvement of electron-beam-deposition techniques
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12 |
1 |
p. 40
|
artikel
|
| 49 |
The effect of RF annealing upon electon-beam irradiated MIS structures
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12 |
1 |
p. 41
|
artikel
|
| 50 |
The electon beam: a better way to make semiconductor masks
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12 |
1 |
p. 41
|
artikel
|
| 51 |
The limitations of reactively-bonded thick film gold conductors
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12 |
1 |
p. 40
|
artikel
|
| 52 |
The MPUR mask projection and alignment repeater of VEB Carl Zeiss JENA
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12 |
1 |
p. 42
|
artikel
|
| 53 |
Thick film resistors at liquid nitrogen temperature and at microwave frequencies
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12 |
1 |
p. 43
|
artikel
|
| 54 |
Trends in packaging and interconnection of integrated circuits
|
Saunders, A.G.
|
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|
12 |
1 |
p. 23-29
|
artikel
|
| 55 |
Vibration, shock and intense noise testing for reliability
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|
12 |
1 |
p. 42
|
artikel
|
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