| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Active device prescreening for hybrids
|
|
|
|
11 |
6 |
p. 38
|
artikel
|
| 2 |
Active simulations using current conveyors
|
Pal, K.
|
|
|
11 |
6 |
p. 27-28
|
artikel
|
| 3 |
A high-stability RC circuit using high nitrogen doped tantalum
|
|
|
|
11 |
6 |
p. 39
|
artikel
|
| 4 |
Air film system for handling semiconductor wafers
|
|
|
|
11 |
6 |
p. 40
|
artikel
|
| 5 |
Analysis of microprocessors test generation — its meaning and use
|
|
|
|
11 |
6 |
p. 41
|
artikel
|
| 6 |
An analysis of LPCVD system parameters for polysilicon, silicon nitride and silicon dioxide deposition
|
|
|
|
11 |
6 |
p. 39
|
artikel
|
| 7 |
A new resistor system for high reliability applications
|
|
|
|
11 |
6 |
p. 38
|
artikel
|
| 8 |
An overview of E-beam mask-making
|
|
|
|
11 |
6 |
p. 40
|
artikel
|
| 9 |
A programmable pseudo-random noise generator
|
Greenshield, G.
|
|
|
11 |
6 |
p. 25-26
|
artikel
|
| 10 |
A thick film capacitive temperature sensor using barium strontium titanate glass formulations
|
|
|
|
11 |
6 |
p. 41
|
artikel
|
| 11 |
Book Review
|
Matthews, R.B.
|
|
|
11 |
6 |
p. 42
|
artikel
|
| 12 |
Book Review
|
Weatherley, R.T.
|
|
|
11 |
6 |
p. 42
|
artikel
|
| 13 |
Book Review
|
Weatherley, R.T.
|
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|
11 |
6 |
p. 42
|
artikel
|
| 14 |
Characteristics of three-terminal metal-tunnel Oxide-n/p + devices
|
|
|
|
11 |
6 |
p. 40
|
artikel
|
| 15 |
Classified index to articles — Vols. 10 & 11 inclusive
|
|
|
|
11 |
6 |
p. 43-44
|
artikel
|
| 16 |
C-MOS LSI: comparing second-generation approaches
|
|
|
|
11 |
6 |
p. 41
|
artikel
|
| 17 |
Computer controlled optical microprojection system for one micron structures
|
|
|
|
11 |
6 |
p. 40
|
artikel
|
| 18 |
Diffusion of boron into silicon from doped oxide source
|
Prasad, P.M.
|
|
|
11 |
6 |
p. 21-24
|
artikel
|
| 19 |
Digital phase-locked loop finds clock signal in bit stream
|
|
|
|
11 |
6 |
p. 36
|
artikel
|
| 20 |
Double epitaxy method for the simultaneous manufacture of I2L-arrangements and insulated transistors
|
|
|
|
11 |
6 |
p. 40
|
artikel
|
| 21 |
Echo-cancelling chip opens way to increased use of satellite channels
|
|
|
|
11 |
6 |
p. 37
|
artikel
|
| 22 |
ECL accelerates to new system speeds with high-density byte-slice parts
|
|
|
|
11 |
6 |
p. 36
|
artikel
|
| 23 |
Editorial
|
Butcher, John
|
|
|
11 |
6 |
p. 3
|
artikel
|
| 24 |
Electron-exciton inelastic collision cross sections for different semiconductors
|
|
|
|
11 |
6 |
p. 37
|
artikel
|
| 25 |
Electronic dielectric constant of III–V semiconductors
|
|
|
|
11 |
6 |
p. 39
|
artikel
|
| 26 |
Electronics for the motor industry — What will be the impact?
|
Westbrook, M.
|
|
|
11 |
6 |
p. 31-35
|
artikel
|
| 27 |
Electron trapping in neutron-irradiated very thin films of Al2O3
|
|
|
|
11 |
6 |
p. 39
|
artikel
|
| 28 |
Energy levels and degeneracy ratios for magnesium in n-type silicon
|
|
|
|
11 |
6 |
p. 38
|
artikel
|
| 29 |
E-Prom doubles bit density without adding a pin
|
|
|
|
11 |
6 |
p. 37
|
artikel
|
| 30 |
Evaluation delay cut by low-cost microprocessor development
|
|
|
|
11 |
6 |
p. 37
|
artikel
|
| 31 |
Generalised transport equations for semiconductors
|
|
|
|
11 |
6 |
p. 41
|
artikel
|
| 32 |
Hermetic packages for hybrid circuits
|
|
|
|
11 |
6 |
p. 37
|
artikel
|
| 33 |
HMOS II static RAMs overtake bipolar competition
|
|
|
|
11 |
6 |
p. 36
|
artikel
|
| 34 |
Hybrid IC structures using solder reflow technology
|
|
|
|
11 |
6 |
p. 37
|
artikel
|
| 35 |
Integrated bandsplit filter system for a dual-tone-multifrequency receiver
|
Gregorian, R.
|
|
|
11 |
6 |
p. 5-12
|
artikel
|
| 36 |
Low expansivity organic substrate for flip-chip bonding
|
|
|
|
11 |
6 |
p. 38
|
artikel
|
| 37 |
MNOS technology — will it survive?
|
|
|
|
11 |
6 |
p. 36
|
artikel
|
| 38 |
Model for describing emission characteristics of electron-beam evaporation sources
|
|
|
|
11 |
6 |
p. 41
|
artikel
|
| 39 |
Modular IC tester is easily optimised
|
|
|
|
11 |
6 |
p. 41
|
artikel
|
| 40 |
Monolithic MICs gain momentum as gallium arsenide MSI nears
|
|
|
|
11 |
6 |
p. 37
|
artikel
|
| 41 |
Multiprocessors architectures
|
|
|
|
11 |
6 |
p. 41
|
artikel
|
| 42 |
Negative Hall effect of hot holes in silicon
|
|
|
|
11 |
6 |
p. 39
|
artikel
|
| 43 |
New generation of electronic components and how they influence printed circuit boards
|
|
|
|
11 |
6 |
p. 37-38
|
artikel
|
| 44 |
Nonequilibrium response of m.o.s. devices to a linear voltage ramp in the presence of illumination
|
|
|
|
11 |
6 |
p. 36
|
artikel
|
| 45 |
Now for the math-processing chips
|
|
|
|
11 |
6 |
p. 41
|
artikel
|
| 46 |
Observation of a donor exciton band in silicon
|
|
|
|
11 |
6 |
p. 41
|
artikel
|
| 47 |
Older processes revamped as new arrivals extend performance limits
|
|
|
|
11 |
6 |
p. 41
|
artikel
|
| 48 |
One-chip data-encryption unit accesses memory directly
|
|
|
|
11 |
6 |
p. 36
|
artikel
|
| 49 |
One micron range photoresist imaging; a practical approach
|
|
|
|
11 |
6 |
p. 40
|
artikel
|
| 50 |
On the splitting of the exciton ground state in silicon
|
|
|
|
11 |
6 |
p. 37
|
artikel
|
| 51 |
Peripheral chips shift microprocessor systems into high gear
|
|
|
|
11 |
6 |
p. 37
|
artikel
|
| 52 |
pn Junction applications and transport properties in polysilicon rods
|
|
|
|
11 |
6 |
p. 38-39
|
artikel
|
| 53 |
Polysilicon production: cost analysis of conventional process
|
|
|
|
11 |
6 |
p. 38
|
artikel
|
| 54 |
Pressure oxidation of silicon: an emerging technology
|
|
|
|
11 |
6 |
p. 40
|
artikel
|
| 55 |
Processing considerations to achieve optimum performance from low TCR resistor systems
|
|
|
|
11 |
6 |
p. 38
|
artikel
|
| 56 |
Redistribution of dopant impurities in oxidising ambients
|
|
|
|
11 |
6 |
p. 37
|
artikel
|
| 57 |
Reed relays in microprocessor-based data-acquisition systems
|
Brown, Peter
|
|
|
11 |
6 |
p. 29-30
|
artikel
|
| 58 |
Role of chlorine in silicon oxidation (Part 1)
|
|
|
|
11 |
6 |
p. 39
|
artikel
|
| 59 |
Role of chlorine in silicon oxidation — Part II
|
|
|
|
11 |
6 |
p. 40
|
artikel
|
| 60 |
Scaled process adds new life to bipolar RAMs
|
|
|
|
11 |
6 |
p. 37
|
artikel
|
| 61 |
Silver migration and the reliability of Pd/Ag conductors in thick-film dielectric crossover structures
|
|
|
|
11 |
6 |
p. 39
|
artikel
|
| 62 |
Simple S-parameter measurement of base spreading resistance
|
Unwin, R.T.
|
|
|
11 |
6 |
p. 18-20
|
artikel
|
| 63 |
Store coupling of unequal microprocessors
|
|
|
|
11 |
6 |
p. 41
|
artikel
|
| 64 |
Temperature dependence of the Hall coefficient of thin films
|
|
|
|
11 |
6 |
p. 39
|
artikel
|
| 65 |
The determination of interfacial and bulk properties of gold and m.o.s. structures using quasiequilibrium and non-steady-state linear voltage-ramp techniques
|
|
|
|
11 |
6 |
p. 38
|
artikel
|
| 66 |
Theoretical estimates of the sheet resistance of Gaussian n-type ion-implanted layers in semiconductors: phosphorus in silicon
|
|
|
|
11 |
6 |
p. 41
|
artikel
|
| 67 |
The use of saddle-field ion sources for etching semiconductor materials
|
Goldspink, G.F.
|
|
|
11 |
6 |
p. 13-17
|
artikel
|
| 68 |
Tunnels in semiconductor epitaxy
|
|
|
|
11 |
6 |
p. 39
|
artikel
|
| 69 |
V-MOS chip joins microprocessor to handle signals in real time
|
|
|
|
11 |
6 |
p. 41
|
artikel
|
| 70 |
Yield improvement on L.S.I.
|
|
|
|
11 |
6 |
p. 40
|
artikel
|
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