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                             70 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Active device prescreening for hybrids
11 6 p. 38
artikel
2 Active simulations using current conveyors Pal, K.

11 6 p. 27-28
artikel
3 A high-stability RC circuit using high nitrogen doped tantalum
11 6 p. 39
artikel
4 Air film system for handling semiconductor wafers
11 6 p. 40
artikel
5 Analysis of microprocessors test generation — its meaning and use
11 6 p. 41
artikel
6 An analysis of LPCVD system parameters for polysilicon, silicon nitride and silicon dioxide deposition
11 6 p. 39
artikel
7 A new resistor system for high reliability applications
11 6 p. 38
artikel
8 An overview of E-beam mask-making
11 6 p. 40
artikel
9 A programmable pseudo-random noise generator Greenshield, G.

11 6 p. 25-26
artikel
10 A thick film capacitive temperature sensor using barium strontium titanate glass formulations
11 6 p. 41
artikel
11 Book Review Matthews, R.B.

11 6 p. 42
artikel
12 Book Review Weatherley, R.T.

11 6 p. 42
artikel
13 Book Review Weatherley, R.T.

11 6 p. 42
artikel
14 Characteristics of three-terminal metal-tunnel Oxide-n/p + devices
11 6 p. 40
artikel
15 Classified index to articles — Vols. 10 & 11 inclusive
11 6 p. 43-44
artikel
16 C-MOS LSI: comparing second-generation approaches
11 6 p. 41
artikel
17 Computer controlled optical microprojection system for one micron structures
11 6 p. 40
artikel
18 Diffusion of boron into silicon from doped oxide source Prasad, P.M.

11 6 p. 21-24
artikel
19 Digital phase-locked loop finds clock signal in bit stream
11 6 p. 36
artikel
20 Double epitaxy method for the simultaneous manufacture of I2L-arrangements and insulated transistors
11 6 p. 40
artikel
21 Echo-cancelling chip opens way to increased use of satellite channels
11 6 p. 37
artikel
22 ECL accelerates to new system speeds with high-density byte-slice parts
11 6 p. 36
artikel
23 Editorial Butcher, John

11 6 p. 3
artikel
24 Electron-exciton inelastic collision cross sections for different semiconductors
11 6 p. 37
artikel
25 Electronic dielectric constant of III–V semiconductors
11 6 p. 39
artikel
26 Electronics for the motor industry — What will be the impact? Westbrook, M.

11 6 p. 31-35
artikel
27 Electron trapping in neutron-irradiated very thin films of Al2O3
11 6 p. 39
artikel
28 Energy levels and degeneracy ratios for magnesium in n-type silicon
11 6 p. 38
artikel
29 E-Prom doubles bit density without adding a pin
11 6 p. 37
artikel
30 Evaluation delay cut by low-cost microprocessor development
11 6 p. 37
artikel
31 Generalised transport equations for semiconductors
11 6 p. 41
artikel
32 Hermetic packages for hybrid circuits
11 6 p. 37
artikel
33 HMOS II static RAMs overtake bipolar competition
11 6 p. 36
artikel
34 Hybrid IC structures using solder reflow technology
11 6 p. 37
artikel
35 Integrated bandsplit filter system for a dual-tone-multifrequency receiver Gregorian, R.

11 6 p. 5-12
artikel
36 Low expansivity organic substrate for flip-chip bonding
11 6 p. 38
artikel
37 MNOS technology — will it survive?
11 6 p. 36
artikel
38 Model for describing emission characteristics of electron-beam evaporation sources
11 6 p. 41
artikel
39 Modular IC tester is easily optimised
11 6 p. 41
artikel
40 Monolithic MICs gain momentum as gallium arsenide MSI nears
11 6 p. 37
artikel
41 Multiprocessors architectures
11 6 p. 41
artikel
42 Negative Hall effect of hot holes in silicon
11 6 p. 39
artikel
43 New generation of electronic components and how they influence printed circuit boards
11 6 p. 37-38
artikel
44 Nonequilibrium response of m.o.s. devices to a linear voltage ramp in the presence of illumination
11 6 p. 36
artikel
45 Now for the math-processing chips
11 6 p. 41
artikel
46 Observation of a donor exciton band in silicon
11 6 p. 41
artikel
47 Older processes revamped as new arrivals extend performance limits
11 6 p. 41
artikel
48 One-chip data-encryption unit accesses memory directly
11 6 p. 36
artikel
49 One micron range photoresist imaging; a practical approach
11 6 p. 40
artikel
50 On the splitting of the exciton ground state in silicon
11 6 p. 37
artikel
51 Peripheral chips shift microprocessor systems into high gear
11 6 p. 37
artikel
52 pn Junction applications and transport properties in polysilicon rods
11 6 p. 38-39
artikel
53 Polysilicon production: cost analysis of conventional process
11 6 p. 38
artikel
54 Pressure oxidation of silicon: an emerging technology
11 6 p. 40
artikel
55 Processing considerations to achieve optimum performance from low TCR resistor systems
11 6 p. 38
artikel
56 Redistribution of dopant impurities in oxidising ambients
11 6 p. 37
artikel
57 Reed relays in microprocessor-based data-acquisition systems Brown, Peter

11 6 p. 29-30
artikel
58 Role of chlorine in silicon oxidation (Part 1)
11 6 p. 39
artikel
59 Role of chlorine in silicon oxidation — Part II
11 6 p. 40
artikel
60 Scaled process adds new life to bipolar RAMs
11 6 p. 37
artikel
61 Silver migration and the reliability of Pd/Ag conductors in thick-film dielectric crossover structures
11 6 p. 39
artikel
62 Simple S-parameter measurement of base spreading resistance Unwin, R.T.

11 6 p. 18-20
artikel
63 Store coupling of unequal microprocessors
11 6 p. 41
artikel
64 Temperature dependence of the Hall coefficient of thin films
11 6 p. 39
artikel
65 The determination of interfacial and bulk properties of gold and m.o.s. structures using quasiequilibrium and non-steady-state linear voltage-ramp techniques
11 6 p. 38
artikel
66 Theoretical estimates of the sheet resistance of Gaussian n-type ion-implanted layers in semiconductors: phosphorus in silicon
11 6 p. 41
artikel
67 The use of saddle-field ion sources for etching semiconductor materials Goldspink, G.F.

11 6 p. 13-17
artikel
68 Tunnels in semiconductor epitaxy
11 6 p. 39
artikel
69 V-MOS chip joins microprocessor to handle signals in real time
11 6 p. 41
artikel
70 Yield improvement on L.S.I.
11 6 p. 40
artikel
                             70 gevonden resultaten
 
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