nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
A compact C–V model for 120nm AlGaN/GaN HEMT with modified field dependent mobility for high frequency applications
|
Gangwani, Parvesh |
|
2007 |
|
8-9 |
p. 848-854 7 p. |
artikel |
2 |
A model for the resonant tunneling semiconductor-controlled rectifier
|
Barkana, B.D. |
|
2007 |
|
8-9 |
p. 871-876 6 p. |
artikel |
3 |
A monolithic buck DC–DC converter with on-chip PWM circuit
|
Lin, Yeong-Tsair |
|
2007 |
|
8-9 |
p. 923-930 8 p. |
artikel |
4 |
An analytical two-dimensional model for AlGaN/GaN HEMT with polarization effects for high power applications
|
Tyagi, Rajesh K. |
|
2007 |
|
8-9 |
p. 877-883 7 p. |
artikel |
5 |
A new SIMPLORER model for single-electron transistors
|
Boubaker, A. |
|
2007 |
|
8-9 |
p. 894-899 6 p. |
artikel |
6 |
An ultra-high level second-order nonlinear optical susceptibility in strained asymmetric GaN–AlGaN–AlN quantum wells: Towards all-optical devices and systems
|
Rostami, A. |
|
2007 |
|
8-9 |
p. 900-904 5 p. |
artikel |
7 |
A systematic dry etching process for profile control of quantum dots and nanoconstrictions
|
Sutikno, Madnarski |
|
2007 |
|
8-9 |
p. 823-827 5 p. |
artikel |
8 |
Characteristics of high Al content Al x Ga1− x N grown by metalorganic chemical vapor deposition
|
Wang, Xiaoyan |
|
2007 |
|
8-9 |
p. 838-841 4 p. |
artikel |
9 |
Characteristics of SiCN microstructures for harsh environment and high-power MEMS applications
|
Chung, Gwiy-Sang |
|
2007 |
|
8-9 |
p. 888-893 6 p. |
artikel |
10 |
Editorial Board
|
|
|
2007 |
|
8-9 |
p. IFC- 1 p. |
artikel |
11 |
Estimation of gate-to-channel tunneling current in ultra-thin oxide sub-50nm double gate devices
|
Mukhopadhyay, Saibal |
|
2007 |
|
8-9 |
p. 931-941 11 p. |
artikel |
12 |
Evaluation, prediction and reduction of routing congestion
|
Saeedi, Mehdi |
|
2007 |
|
8-9 |
p. 942-958 17 p. |
artikel |
13 |
Fabrication and effect of the dielectric permittivity on the ideality factor of MEH-PPV Schottky diodes doped with electron acceptor fluorescent dyes
|
Ahmed, Fatima E. |
|
2007 |
|
8-9 |
p. 834-837 4 p. |
artikel |
14 |
Features of a tunnel diode oscillator at different temperatures
|
Al-Harthi, S. |
|
2007 |
|
8-9 |
p. 817-822 6 p. |
artikel |
15 |
Fractal analysis of InGaN self-assemble quantum dots grown by MOCVD
|
Lam, K.T. |
|
2007 |
|
8-9 |
p. 905-909 5 p. |
artikel |
16 |
Influence of the composition fluctuation and the disorder on the bowing band gap in semiconductor materials
|
Ben Fredj, A. |
|
2007 |
|
8-9 |
p. 860-870 11 p. |
artikel |
17 |
Investigation of Zr–N thin films for use as diffusion barrier in Cu metallization
|
Wang, Ying |
|
2007 |
|
8-9 |
p. 910-914 5 p. |
artikel |
18 |
Iterative optimization of tail breaking force of 1mil wire thermosonic ball bonding processes and the influence of plasma cleaning
|
Lee, J. |
|
2007 |
|
8-9 |
p. 842-847 6 p. |
artikel |
19 |
Organic thin film transistors with double insulator layers
|
Liu, X. |
|
2007 |
|
8-9 |
p. 919-922 4 p. |
artikel |
20 |
Simulation and fabrication of HF microelectromechanical bandpass filter
|
Dai, Ching-Liang |
|
2007 |
|
8-9 |
p. 828-833 6 p. |
artikel |
21 |
Surface micromachined RF MEMS variable capacitor
|
Fang, Dong-Ming |
|
2007 |
|
8-9 |
p. 855-859 5 p. |
artikel |
22 |
The influence of nitrogen and fluorine on the dielectric constant of hydrogenated amorphous carbon (a-C:H) films
|
Guerino, M. |
|
2007 |
|
8-9 |
p. 915-918 4 p. |
artikel |
23 |
X-ray diffraction studies of electrostatic sprayed SnO2:F films
|
Zaouk, D. |
|
2007 |
|
8-9 |
p. 884-887 4 p. |
artikel |