| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Author index to vol. 22
|
|
|
1991
|
|
7-8 |
p. 121-
1 p.
|
artikel
|
| 2 |
Direct capacitance measurements of small geometry MOS transistors
|
Vitanov, P.
|
|
1991
|
|
7-8 |
p. 77-89
13 p.
|
artikel
|
| 3 |
Editorial
|
Butcher, John B.
|
|
1991
|
|
7-8 |
p. 4-
1 p.
|
artikel
|
| 4 |
Modelling the sidewall masked oxidation process using the boundary element method
|
Needs, M.J.
|
|
1991
|
|
7-8 |
p. 33-46
14 p.
|
artikel
|
| 5 |
New applications of low temperature PECVD silicon nitride films for microelectronic device fabrication
|
Dange, M.D.
|
|
1991
|
|
7-8 |
p. 19-26
8 p.
|
artikel
|
| 6 |
On the development of chip-net
|
Diwan, Parag
|
|
1991
|
|
7-8 |
p. 105-120
16 p.
|
artikel
|
| 7 |
Optimization of interconnect thickness for minimum propagation delays in VLSI
|
Gupta, Shobha
|
|
1991
|
|
7-8 |
p. 91-96
6 p.
|
artikel
|
| 8 |
Prediction of band discontinuities in semiconductor heterojunctions: A simple model
|
Karafyllidis, Yiannis
|
|
1991
|
|
7-8 |
p. 59-65
7 p.
|
artikel
|
| 9 |
Semi-insulating polysilicon heterojunctions on silicon
|
Ranade, R.M.
|
|
1991
|
|
7-8 |
p. 47-58
12 p.
|
artikel
|
| 10 |
Simulation of multiple etch fronts
|
Karafyllidis, Yiannis
|
|
1991
|
|
7-8 |
p. 97-104
8 p.
|
artikel
|
| 11 |
Subject index to vol. 22
|
|
|
1991
|
|
7-8 |
p. 122-125
4 p.
|
artikel
|
| 12 |
The effects of implantation dose and anneal temperature on the layered structure and electrical properties of oxygen-ion-implanted silicon-on-insulator
|
Dutta, Pradip K.
|
|
1991
|
|
7-8 |
p. 67-76
10 p.
|
artikel
|
| 13 |
Transient analysis of charge transport in the nitride of MNOS devices under Fowler-Nordheim injection conditions
|
Martin, F.
|
|
1991
|
|
7-8 |
p. 5-17
13 p.
|
artikel
|
| 14 |
Trap density of silicon chlorine oxides
|
Dimitrov, D.
|
|
1991
|
|
7-8 |
p. 27-32
6 p.
|
artikel
|
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