| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A behavioral model development methodology for microwave components and integration in VHDL-AMS
|
Doménech-Asensi, Ginés
|
|
2007
|
|
4-5 |
p. 489-495
7 p.
|
artikel
|
| 2 |
A compact temperature sensor for a 1.0 μm CMOS technology using lateral p-n-p transistors
|
Montané, Enric
|
|
1998
|
|
4-5 |
p. 277-281
5 p.
|
artikel
|
| 3 |
A comparative study of electrical and optical properties of InN and In0.48Ga0.52N
|
Gunes, M.
|
|
2009
|
|
4-5 |
p. 872-874
3 p.
|
artikel
|
| 4 |
Active thermography application for solder thickness measurement in surface mounted device technology
|
Wiecek, Boguslaw
|
|
1998
|
|
4-5 |
p. 223-228
6 p.
|
artikel
|
| 5 |
Adsorption of small molecules on graphene
|
Leenaerts, O.
|
|
2009
|
|
4-5 |
p. 860-862
3 p.
|
artikel
|
| 6 |
Advanced quantum dot and photonic crystal technologies for integrated nanophotonic circuits
|
Sugimoto, Y.
|
|
2009
|
|
4-5 |
p. 736-740
5 p.
|
artikel
|
| 7 |
AIXTRON GmbH — The CVD engineering company
|
O'Connell, Sarah
|
|
1996
|
|
4-5 |
p. i-ii
nvt p.
|
artikel
|
| 8 |
AlAs oxidation process in GaAs/AlGaAs/AlAs heterostructures grown by molecular beam epitaxy on GaAs (n11)A substrates
|
Vaccaro, P.O
|
|
1999
|
|
4-5 |
p. 387-391
5 p.
|
artikel
|
| 9 |
AlGaAs/GaAs and InGaAs/GaAs quantum wells grown on GaAs (111)A substrates
|
Watanabe, Toshihide
|
|
1996
|
|
4-5 |
p. 411-421
11 p.
|
artikel
|
| 10 |
A look-ahead synthesis technique with backtracking for switching activity reduction in low power high-level synthesis
|
Xing, Xianwu
|
|
2007
|
|
4-5 |
p. 595-605
11 p.
|
artikel
|
| 11 |
A MOS transistor thermal sub-circuit for the SPICE circuit simulator
|
Nooshabadi, Saeiid
|
|
1998
|
|
4-5 |
p. 229-234
6 p.
|
artikel
|
| 12 |
Analysis of slow traps centres in submicron MOSFETs by random telegraph signal technique
|
Sghaier, N.
|
|
2007
|
|
4-5 |
p. 610-614
5 p.
|
artikel
|
| 13 |
An analysis of interconnect delay minimization by low-voltage repeater insertion
|
Chandel, Rajeevan
|
|
2007
|
|
4-5 |
p. 649-655
7 p.
|
artikel
|
| 14 |
An efficient thermal simulation tool for ICs, microsystem elements and MCMs: the μS-THERMANAL
|
Csendes, A.
|
|
1998
|
|
4-5 |
p. 241-255
15 p.
|
artikel
|
| 15 |
Anodic porous alumina structural characteristics study based on SEM image processing and analysis
|
Raimundo, Daniel S.
|
|
2009
|
|
4-5 |
p. 844-847
4 p.
|
artikel
|
| 16 |
Arsenic vapor pressure dependence of surface morphology and silicon doping in molecular beam epitaxial grown GaAs (n11)A (n=1–4) substrates
|
Ohachi, T.
|
|
1999
|
|
4-5 |
p. 471-476
6 p.
|
artikel
|
| 17 |
A scanning tunneling microscopy study of the GaAs(112) surfaces
|
Geelhaar, L.
|
|
1999
|
|
4-5 |
p. 393-396
4 p.
|
artikel
|
| 18 |
Backside contact effect on the morphological and optical features of porous silicon photonic crystals
|
Huanca, Danilo Roque
|
|
2009
|
|
4-5 |
p. 744-748
5 p.
|
artikel
|
| 19 |
Blue/green luminescence based on Zn(S)Se/GaAs heterostructures
|
Hizem, N.
|
|
2007
|
|
4-5 |
p. 496-500
5 p.
|
artikel
|
| 20 |
Calculation of the effective indices of a GaN/In x Ga1− x N optical guiding structure
|
Anani, Macho
|
|
2007
|
|
4-5 |
p. 505-508
4 p.
|
artikel
|
| 21 |
Carbon nanotubes as a basis for terahertz emitters and detectors
|
Rosenau da Costa, M.
|
|
2009
|
|
4-5 |
p. 776-778
3 p.
|
artikel
|
| 22 |
Carbon nanotubes interacting with vitamins: First principles calculations
|
de Menezes, Vivian M.
|
|
2009
|
|
4-5 |
p. 877-879
3 p.
|
artikel
|
| 23 |
Carriers temperature for an operating silicon p–n junction
|
Boukhatem, M.H.
|
|
2007
|
|
4-5 |
p. 615-619
5 p.
|
artikel
|
| 24 |
Cathodoluminescence investigations of vertically stacked, sub-μm arrays of sidewall quantum wires on patterned GaAs (311)A substrates
|
Jahn, U
|
|
1999
|
|
4-5 |
p. 445-448
4 p.
|
artikel
|
| 25 |
Cathodoluminescence study of pyramidal facets in piezoelectric InGaAs/GaAs multiple quantum well pin photodiodes
|
Romero, M.J
|
|
1999
|
|
4-5 |
p. 427-431
5 p.
|
artikel
|
| 26 |
Cluster and thin layer of compound semiconductor growth on hexagonal and vicinal cubic surface and the simulation of atom behavior
|
Vaitkus, J.
|
|
1999
|
|
4-5 |
p. 335-340
6 p.
|
artikel
|
| 27 |
Comparative study of the GaAs (113), (115), (001), (1 1 5), (1 1 3), and (110) surfaces by atomic force microscopy, low energy electron diffraction, and reflectance anisotropy spectroscopy
|
Pristovsek, Markus
|
|
1999
|
|
4-5 |
p. 449-453
5 p.
|
artikel
|
| 28 |
Conversion efficiency enhancement of AlGaAs quantum well solar cells
|
Rimada, J.C.
|
|
2007
|
|
4-5 |
p. 513-518
6 p.
|
artikel
|
| 29 |
Design and fabrication of a magnetic bi-stable electromagnetic MEMS relay
|
Fu, Shi
|
|
2007
|
|
4-5 |
p. 556-563
8 p.
|
artikel
|
| 30 |
Design of sequential circuits by quantum-dot cellular automata
|
Huang, J.
|
|
2007
|
|
4-5 |
p. 525-537
13 p.
|
artikel
|
| 31 |
Determination of the quality of the soldering of semiconductor chips by the alternating-heat-flux method
|
Malinski, Miroslaw
|
|
1998
|
|
4-5 |
p. 209-213
5 p.
|
artikel
|
| 32 |
Dissociation of excitons in organic light-emitting diodes
|
Huang, Jin Zhao
|
|
2007
|
|
4-5 |
p. 501-504
4 p.
|
artikel
|
| 33 |
3D real-space quantum transport simulation of nanowire MOS transistors: Influence of the ionized doping impurity
|
Bescond, M.
|
|
2009
|
|
4-5 |
p. 756-758
3 p.
|
artikel
|
| 34 |
Dynamic equilibrium of magnetic ions in Cd(Mn)Te quantum dots
|
Clément, T.
|
|
2009
|
|
4-5 |
p. 733-735
3 p.
|
artikel
|
| 35 |
Editorial
|
Henini (Guest Editor), M
|
|
1999
|
|
4-5 |
p. 313-
1 p.
|
artikel
|
| 36 |
Editorial board
|
|
|
2009
|
|
4-5 |
p. IFC-
1 p.
|
artikel
|
| 37 |
Editorial board
|
|
|
2007
|
|
4-5 |
p. IFC-
1 p.
|
artikel
|
| 38 |
Effect of magnetic field on galvanomagnetic properties of mica/Bi/EuS heterostructures
|
Rogacheva, E.I.
|
|
2009
|
|
4-5 |
p. 821-823
3 p.
|
artikel
|
| 39 |
Effect of the substrate orientation on the self-organisation of (InGa)As/GaAs quantum dots
|
Henini, M
|
|
1999
|
|
4-5 |
p. 319-322
4 p.
|
artikel
|
| 40 |
Electric field effects on the carrier migration in self-assembled InAs/GaAs quantum dots
|
Marques, F.A.M.
|
|
2009
|
|
4-5 |
p. 838-840
3 p.
|
artikel
|
| 41 |
Electromodulation spectroscopy of the ground and excited state transitions in GaInN/AlInN multi-quantum wells
|
Kudrawiec, R.
|
|
2009
|
|
4-5 |
p. 805-808
4 p.
|
artikel
|
| 42 |
Electronic transport through a T-shaped four-quantum dot system
|
Yin, Haitao
|
|
2007
|
|
4-5 |
p. 570-575
6 p.
|
artikel
|
| 43 |
Electro, thermal and elastic characterizations of suspended micro beams
|
Lin, Liwei
|
|
1998
|
|
4-5 |
p. 269-276
8 p.
|
artikel
|
| 44 |
Epitaxial lateral overgrowth of InP/GaAs (100) heterostructures by metalorganic chemical vapor deposition
|
Xiong, Deping
|
|
2007
|
|
4-5 |
p. 606-609
4 p.
|
artikel
|
| 45 |
Epitaxy of Mn-based magnetic thin films on semiconductors
|
De Boeck, J.
|
|
1996
|
|
4-5 |
p. 383-392
10 p.
|
artikel
|
| 46 |
European Nano Systems 2007
|
Courtois, Bernard
|
|
2009
|
|
4-5 |
p. 655-
1 p.
|
artikel
|
| 47 |
Exchange-induced band hybridization in InAs/GaSb based type II and broken-gap quantum well systems
|
Xu, W.
|
|
2009
|
|
4-5 |
p. 809-811
3 p.
|
artikel
|
| 48 |
Excitonic properties of ordered and disordered SiGe nanocrystals
|
de Oliveira, E.L.
|
|
2009
|
|
4-5 |
p. 762-765
4 p.
|
artikel
|
| 49 |
Experimental study on the condition of the formation of electric field domains in multiple finite-superlattices
|
Ohtani, N.
|
|
2009
|
|
4-5 |
p. 818-820
3 p.
|
artikel
|
| 50 |
Fabrication and characterization of p-Si/n-ZnO heterostructured junctions
|
Klason, P.
|
|
2009
|
|
4-5 |
p. 706-710
5 p.
|
artikel
|
| 51 |
Fabrication and characterization of stacked ZnO and ZnOGa2O3 layers for the realization of bulk acoustic wave resonated membranes
|
Zaatar, Y.
|
|
2007
|
|
4-5 |
p. 538-546
9 p.
|
artikel
|
| 52 |
First-principles study of band-gap reduction in GaN/GaSb superlattices
|
Ishikawa, M.
|
|
2009
|
|
4-5 |
p. 824-826
3 p.
|
artikel
|
| 53 |
First-principles study of metal atom adsorption on the boron-doped carbon nanotubes
|
Ni, M.Y.
|
|
2009
|
|
4-5 |
p. 863-866
4 p.
|
artikel
|
| 54 |
Formation of II–VI nanostructures on vicinal surfaces
|
Mariette, H
|
|
1999
|
|
4-5 |
p. 329-334
6 p.
|
artikel
|
| 55 |
Fully digital strategy for fast calibration and test of ΣΔ ADCs
|
De Venuto, Daniela
|
|
2007
|
|
4-5 |
p. 474-481
8 p.
|
artikel
|
| 56 |
Geometric dependence of the dielectric properties of quantum dots arrays
|
Camacho, A.S.
|
|
2009
|
|
4-5 |
p. 835-837
3 p.
|
artikel
|
| 57 |
Giant piezoelectric effect in GaN self-assembled quantum dots
|
Widmann, F
|
|
1999
|
|
4-5 |
p. 353-356
4 p.
|
artikel
|
| 58 |
Growth and characterization of HTSC thin films for microelectronic devices
|
Perrin, A.
|
|
1996
|
|
4-5 |
p. 343-360
18 p.
|
artikel
|
| 59 |
Growth of GaAs epitaxial layers on porous silicon
|
Kang, T.W.
|
|
1996
|
|
4-5 |
p. 423-436
14 p.
|
artikel
|
| 60 |
High performance low power CMOS dynamic logic for arithmetic circuits
|
Navarro-Botello, Victor
|
|
2007
|
|
4-5 |
p. 482-488
7 p.
|
artikel
|
| 61 |
High resolution temperature mapping of microelectronic structures using quantitative fluorescence microthermography
|
Herzum, C.
|
|
1998
|
|
4-5 |
p. 163-170
8 p.
|
artikel
|
| 62 |
Hole states in vertically coupled double Ge/Si quantum dots
|
Yakimov, A.I.
|
|
2009
|
|
4-5 |
p. 785-787
3 p.
|
artikel
|
| 63 |
Improving the performance of organic thin-film transistor with a doped interlayer
|
Hu, Wei
|
|
2007
|
|
4-5 |
p. 509-512
4 p.
|
artikel
|
| 64 |
Improving the performance of the organic thin-film transistors with thin insulating lithium fluoride buffer layer
|
Hu, Wei
|
|
2007
|
|
4-5 |
p. 632-636
5 p.
|
artikel
|
| 65 |
Influence of carbonaceous electrodes on capacitance and breakdown voltage for hybrid capacitor
|
Albina, A.
|
|
2007
|
|
4-5 |
p. 642-648
7 p.
|
artikel
|
| 66 |
Influence of catalyst supporters on catalyst nanoparticles in synthesis of single-walled carbon nanotubes
|
Inoue, Shuhei
|
|
2009
|
|
4-5 |
p. 692-696
5 p.
|
artikel
|
| 67 |
Influence of electrode characteristics on the performance of organic light-emitting devices
|
You, Zhong Zhi
|
|
2007
|
|
4-5 |
p. 564-569
6 p.
|
artikel
|
| 68 |
Influence of substrate misorientation on the optical and structural properties of InGaAs/GaAs single strained quantum wells grown on (111)B GaAs by molecular beam epitaxy
|
Sánchez, J.J.
|
|
1999
|
|
4-5 |
p. 373-378
6 p.
|
artikel
|
| 69 |
Initial stages of InP/GaP (100) and (111)A,B grown by metal organic chemical vapor deposition
|
Borgi, K.
|
|
1999
|
|
4-5 |
p. 347-351
5 p.
|
artikel
|
| 70 |
International Conference on Superlattices, Nanostructures and Nanodevices (ICSNN 2008)
|
de Aquino Farias, Gil
|
|
2009
|
|
4-5 |
p. 711-
1 p.
|
artikel
|
| 71 |
Li batteries with porous sol–gel cathodes
|
Dima, Antonela
|
|
2007
|
|
4-5 |
p. 637-641
5 p.
|
artikel
|
| 72 |
Light emission and the quantum efficiency of lateral p–n junctions on patterned GaAs (100) substrates
|
Koo, B.J
|
|
1999
|
|
4-5 |
p. 403-407
5 p.
|
artikel
|
| 73 |
Low-dimensional devices fabricated by molecular beam epitaxy regrowth over patterned δ-doped backgates
|
Leadbeater, M.L.
|
|
1999
|
|
4-5 |
p. 315-318
4 p.
|
artikel
|
| 74 |
Low dimensional structures and devices: epitaxial deposition techniques and materials systems
|
Henini, M.
|
|
1996
|
|
4-5 |
p. 253-255
3 p.
|
artikel
|
| 75 |
Magnetocapacitance of a MODFET under two-dimensional periodic potential modulation
|
Kliros, G.S.
|
|
2007
|
|
4-5 |
p. 625-631
7 p.
|
artikel
|
| 76 |
Mathematical modelling of a porous silicon-based pellistor-type catalytic flammable gas sensor
|
Kolev, S.D.
|
|
1998
|
|
4-5 |
p. 235-239
5 p.
|
artikel
|
| 77 |
MBE growth of fluorides
|
Sugiyama, Muneshiro
|
|
1996
|
|
4-5 |
p. 361-382
22 p.
|
artikel
|
| 78 |
MBE growth physics: application to device technology
|
Herman, Marian A.
|
|
1996
|
|
4-5 |
p. 257-296
40 p.
|
artikel
|
| 79 |
MCP Wafer Technology profile
|
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|
1996
|
|
4-5 |
p. xxi-xxv
nvt p.
|
artikel
|
| 80 |
Metalorganic vapor phase epitaxy growth and properties of GaAs/AlGaAs and InGaAs/GaAs quantum well structures on (111)A GaAs substrates
|
Cho, Soohaeng
|
|
1999
|
|
4-5 |
p. 455-459
5 p.
|
artikel
|
| 81 |
Mid-infrared absorption by short-period InAs/GaSb type II superlattices
|
Li, L.L.
|
|
2009
|
|
4-5 |
p. 815-817
3 p.
|
artikel
|
| 82 |
Mn x Zn1− x Fe2− y R y O4 (R=Gd, Eu) ferrite nanocrystals for magnetocaloric applications
|
Calderón-Ortiz, E.
|
|
2009
|
|
4-5 |
p. 677-680
4 p.
|
artikel
|
| 83 |
Modeling and fabrication of a microelectromechanical microwave switch
|
Dai, Ching-Liang
|
|
2007
|
|
4-5 |
p. 519-524
6 p.
|
artikel
|
| 84 |
Modelling and experimental study of heat deposition and transport in a semiconductor laser diode
|
Lewis, D.
|
|
1998
|
|
4-5 |
p. 171-179
9 p.
|
artikel
|
| 85 |
Momentum dependent scattering matrix elements in quantum cascade laser transport
|
Schmielau, Tim
|
|
2009
|
|
4-5 |
p. 869-871
3 p.
|
artikel
|
| 86 |
Morphological instabilities during homoepitaxy on vicinal GaAs(110) surfaces
|
Tejedor, P
|
|
1999
|
|
4-5 |
p. 477-482
6 p.
|
artikel
|
| 87 |
MOVPE growth of III–V compounds for optoelectronic and electronic applications
|
Behet, M.
|
|
1996
|
|
4-5 |
p. 297-334
38 p.
|
artikel
|
| 88 |
Multiperiod piezoelectric-barrier all-optical light modulator
|
Ortiz, V
|
|
1999
|
|
4-5 |
p. 409-412
4 p.
|
artikel
|
| 89 |
(N11)A GaAs: a preferable platform for high quality GaAs/AlGaAs structures
|
Shtrikman, H.
|
|
1999
|
|
4-5 |
p. 323-328
6 p.
|
artikel
|
| 90 |
Nanosculpture: Three-dimensional CMOS device structures for the ULSI era
|
Park, Byung-Gook
|
|
2009
|
|
4-5 |
p. 769-772
4 p.
|
artikel
|
| 91 |
Nanostructures defined by the local oxidation of the ferromagnetic GaMnAs layer
|
Voves, J.
|
|
2009
|
|
4-5 |
p. 697-705
9 p.
|
artikel
|
| 92 |
Neutral shallow donors near a metallic interface
|
Slachmuylders, A.F.
|
|
2009
|
|
4-5 |
p. 753-755
3 p.
|
artikel
|
| 93 |
New relaxation mechanisms in InGaAs/GaAs (111) multiple quantum well
|
Gutiérrez, M.
|
|
1999
|
|
4-5 |
p. 467-470
4 p.
|
artikel
|
| 94 |
News and updates in device application, process and materials, being applied in today's microelectronics industry
|
|
|
1996
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|
4-5 |
p. xxvii-l
nvt p.
|
artikel
|
| 95 |
Non-linear graphene optics for terahertz applications
|
Mikhailov, S.A.
|
|
2009
|
|
4-5 |
p. 712-715
4 p.
|
artikel
|
| 96 |
[No title]
|
De Venuto, Daniela
|
|
2007
|
|
4-5 |
p. 453-
1 p.
|
artikel
|
| 97 |
Novel properties of light transmission in multilayer stacks of air/silver thin films
|
Robledo-Martinez, Arturo
|
|
2009
|
|
4-5 |
p. 788-790
3 p.
|
artikel
|
| 98 |
Observation and numerical analysis of quantum subband energies from photoluminescence spectra of organic multiple-quantum wells
|
Ohtani, Naoki
|
|
2009
|
|
4-5 |
p. 867-868
2 p.
|
artikel
|
| 99 |
Optical and morphological properties of In(Ga)As/GaAs quantum dots grown on novel index surfaces
|
Sanguinetti, S.
|
|
1999
|
|
4-5 |
p. 419-425
7 p.
|
artikel
|
| 100 |
Optical filters based in quasiperiodic photonic crystal
|
Vasconcelos, M.S.
|
|
2009
|
|
4-5 |
p. 851-853
3 p.
|
artikel
|
| 101 |
Optical investigation of the relaxation process in InGaAs/GaAs single strained quantum wells grown on (001) and (111)B GaAs substrates
|
Sánchez, J.J.
|
|
1999
|
|
4-5 |
p. 363-366
4 p.
|
artikel
|
| 102 |
Optical study of germanium nanostructures grown on a Si(118) vicinal substrate
|
Bremond, G
|
|
1999
|
|
4-5 |
p. 357-362
6 p.
|
artikel
|
| 103 |
Optical transitions of Al0.35Ga0.65As/GaAs asymmetric double quantum wells grown on GaAs(n11)A (n≤4) substrates
|
Feng, J.M
|
|
1999
|
|
4-5 |
p. 433-437
5 p.
|
artikel
|
| 104 |
Patterning 0.05μm gate on pHEMT
|
Mil'shtein, S.
|
|
2009
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