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                             97 results found
no title author magazine year volume issue page(s) type
1 Analog switch device using a MOS structure Juárez, H.
 2008
 3-4 p. 651-655
5 p.
 article
2 A new type of structural defects in CdZnSe/ZnSe heterostructures Borkovska, L.
 2008
 3-4 p. 589-593
5 p.
 article
3 Bandstructure and photoluminescence of SiGe islands with controlled Ge concentration Brehm, M.
 2008
 3-4 p. 485-488
4 p.
 article
4 Bipolar transistor with quantum well base Mil'shtein, S.
 2008
 3-4 p. 631-634
4 p.
 article
5 Building semiconductor nanostructures atom by atom Korkusinski, M.
 2008
 3-4 p. 318-326
9 p.
 article
6 Capacitance: A property of nanoscale materials based on spatial symmetry of discrete electrons LaFave Jr., Tim
 2008
 3-4 p. 617-623
7 p.
 article
7 Characteristics and fabrication of nanohole array on InP semiconductor substrate using nanoporous alumina Jung, Mi
 2008
 3-4 p. 526-528
3 p.
 article
8 Characterizing total correlations in multipartite systems Paz-Silva, Gerardo A.
 2008
 3-4 p. 699-701
3 p.
 article
9 Chirp compression with single chirped mirrors and its assembly Yakushev, S.O.
 2008
 3-4 p. 690-695
6 p.
 article
10 Comparative investigation of optical and structural properties of porous SiC Rodriguez, M.M.
 2008
 3-4 p. 494-498
5 p.
 article
11 Computer simulation of an operation of the GaInP/AlGaInP QW VCSELs: Excitation of various transverse LP ij modes Piskorski, Łukasz
 2008
 3-4 p. 638-640
3 p.
 article
12 Dependence of the photoluminescence energy and carrier lifetime of the carrier density in nitride quantum well López, M.R.
 2008
 3-4 p. 447-449
3 p.
 article
13 Depression of the superconducting critical temperature and finite-size scaling relation in YBa2Cu3O7− δ /La2/3Ca1/3MnO3 bilayers Morán, O.
 2008
 3-4 p. 556-559
4 p.
 article
14 Dielectric function analysis of ZnSe and CdSe using parametric semiconductor model Jung, Y.W.
 2008
 3-4 p. 570-572
3 p.
 article
15 Direct and indirect exciton states in GaAs-(Ga, Al)As double quantum wells under crossed electric and magnetic fields Oliveira, L.E.
 2008
 3-4 p. 398-401
4 p.
 article
16 Editorial Board 2008
 3-4 p. IFC-
1 p.
 article
17 Effect of CdTe monolayer insertion on CdZnTe/ZnTe quantum well characteristics Kryshtab, T.
 2008
 3-4 p. 418-422
5 p.
 article
18 Effect of eccentricity and boundary conditions on the edge superconducting states in mesoscopic rings Moncada, E.
 2008
 3-4 p. 459-462
4 p.
 article
19 Effect of Fe doping on structural and magnetic properties of La2/3Ca1/3Mn1− y Fe y O3 (y=0–0.03) thin films Arnache, O.
 2008
 3-4 p. 544-547
4 p.
 article
20 Effect of the Dresselhaus spin splitting on the effective Landé g-factor in GaAs–(Ga,Al)As quantum wells under in-plane or growth-direction magnetic fields Porras-Monenegro, N.
 2008
 3-4 p. 390-393
4 p.
 article
21 Effects of external fields on the excitonic emission from single InAs/GaAs quantum dots Holtz, P.O.
 2008
 3-4 p. 331-334
4 p.
 article
22 Effects of geometry, applied hydrostatic pressure and magnetic field on the electron–hole transition energy in a GaAs–Ga1− x Al x As pillbox immersed in a system of Ga1− y Al y As Ramos-Arteaga, S.M.
 2008
 3-4 p. 450-454
5 p.
 article
23 Effects of hydrostatic pressure and crossed electric and magnetic fields on shallow-donor states in GaAs / Ga 1 - x Al x As quantum wells Tangarife, E.
 2008
 3-4 p. 431-434
4 p.
 article
24 Electron dynamics in superlattices subject to crossed magnetic and electric fields Orlita, M.
 2008
 3-4 p. 628-630
3 p.
 article
25 Electron ensemble coherence and terahertz radiation amplification in a cascade superlattice structure Demarina, N.V.
 2008
 3-4 p. 624-627
4 p.
 article
26 Electronic and optical properties of ordered porous germanium Guzmán, David
 2008
 3-4 p. 523-525
3 p.
 article
27 Electronic and thermal transport in hot carrier solar cells with low-dimensional contacts O’Dwyer, M.F.
 2008
 3-4 p. 656-659
4 p.
 article
28 Electron magnetotransport in GaAs/AlGaAs superlattices with weak and strong inter-well coupling Smrčka, L.
 2008
 3-4 p. 411-413
3 p.
 article
29 Electron pumping through quantum dots defined in parallel etched quantum wires Blumenthal, M.D.
 2008
 3-4 p. 365-368
4 p.
 article
30 Energy spectrum in a concentric double quantum ring of GaAs–(Ga,Al)As under applied magnetic fields Culchac, F.J.
 2008
 3-4 p. 402-406
5 p.
 article
31 Energy states in GaAs delta-doped field effect transistors under hydrostatic pressure Martínez-Orozco, J.C.
 2008
 3-4 p. 648-650
3 p.
 article
32 Etched quantum dots for all-optical and electro-optical switches Bickel, Nathan
 2008
 3-4 p. 362-364
3 p.
 article
33 Exciton diamagnetic shift in GaAs / Ga 1 - x Al x As quantum wells under in-plane magnetic fields Duque, C.A.
 2008
 3-4 p. 407-410
4 p.
 article
34 Excitonic dynamics of a quantum dot coupled to a laser-driven semiconductor microcavity Pretel, Alberto
 2008
 3-4 p. 682-684
3 p.
 article
35 Fabrication, characterization, and analysis of photodetectors metal-porous silicon with different geometry and thickness of the porous silicon layer García Salgado, G.
 2008
 3-4 p. 489-493
5 p.
 article
36 Formation and characterization of surface metal nanostructures with tunable optical properties Ovchinnikov, V.
 2008
 3-4 p. 664-668
5 p.
 article
37 Free-standing SiO2 films containing Si nanocrystals directly suitable for transmission electron microscopy Novikov, S.
 2008
 3-4 p. 518-522
5 p.
 article
38 Highly circular-polarized single photon generation from a single quantum dot at zero magnetic field Kobayashi, H.
 2008
 3-4 p. 327-330
4 p.
 article
39 Impurity states in a spherical GaAs–Ga 1 - x Al x As quantum dots: Effects of hydrostatic pressure Perez-Merchancano, S.T.
 2008
 3-4 p. 383-386
4 p.
 article
40 Influence of the hydrostatic pressure onto the electronic and transport properties of n-type double δ -doped GaAs quantum wells Rodriguez-Vargas, I.
 2008
 3-4 p. 438-441
4 p.
 article
41 Influence of Zr concentration on crystalline structure and its electronic properties in the new Zr x Al 1 - x N compound in wurtzite phase: An ab initio study Elizabeth Escorcia–Salas, G.
 2008
 3-4 p. 579-581
3 p.
 article
42 Integrated InGaAsP MQW Mach–Zehnder modulator May-Arrioja, D.A.
 2008
 3-4 p. 660-663
4 p.
 article
43 Kinematic study of refraction properties of an opal-based photonic crystal Salcedo-Reyes, J.C.
 2008
 3-4 p. 427-430
4 p.
 article
44 Lateral Fano resonance and Kondo effect in the strong coupling regime of a quantum dot embedded in a quantum wire Valenzuela, Y.
 2008
 3-4 p. 387-389
3 p.
 article
45 Linear conductance through parallel coupled quantum dots Franco, R.
 2008
 3-4 p. 354-358
5 p.
 article
46 Low frequency noise spectroscopy in InAs/GaAs resonant tunneling quantum dot infrared photodetectors Rupani, R.A.
 2008
 3-4 p. 307-313
7 p.
 article
47 Low temperature SnO2 films deposited by APCVD Morales, C.
 2008
 3-4 p. 586-588
3 p.
 article
48 Magnetoexciton states and diamagnetic shifts in GaAs - Ga 1 - x Al x As quantum dots/ultrathin quantum wells under growth-direction magnetic fields Barticevic, Z.
 2008
 3-4 p. 348-350
3 p.
 article
49 Magnetopolaron effects on the donor states in InP Osório, F.A.P.
 2008
 3-4 p. 573-575
3 p.
 article
50 Mean lifetimes of quasi-bound electronic states in rectangular GaAs/AlGaAs barriers Pichardo, X.A.
 2008
 3-4 p. 414-417
4 p.
 article
51 Miniband properties of superlattice quantum dot arrays fabricated by the edge-defined nanowires Yi, Jong Chang
 2008
 3-4 p. 369-374
6 p.
 article
52 Miniband structure of parabolic GaAs / Al x Ga 1 - x As superlattices Rodriguez-Vargas, I.
 2008
 3-4 p. 423-426
4 p.
 article
53 Nanostructures for nanoelectronics: No potential for room temperature applications? Geller, M.
 2008
 3-4 p. 302-306
5 p.
 article
54 Non-delta-function electronic spectral densities in individual quantum dots Král, Karel
 2008
 3-4 p. 375-377
3 p.
 article
55 [No title] Henini, Mohamed
 2008
 3-4 p. 301-
1 p.
 article
56 On way to ideal quantum dots Elyukhin, V.A.
 2008
 3-4 p. 351-353
3 p.
 article
57 Optical transitions in new trends organic materials Pérez-Merchancano, S.T.
 2008
 3-4 p. 576-578
3 p.
 article
58 Optoelectronic study in porous silicon thin films Torres, J.
 2008
 3-4 p. 482-484
3 p.
 article
59 Path integral approach to dissipation in solid-state qubits Reina, John H.
 2008
 3-4 p. 696-698
3 p.
 article
60 Photonic density of states maps for design of photonic crystal devices Sukhoivanov, I.A.
 2008
 3-4 p. 685-689
5 p.
 article
61 Polaron effects on the energy of a hydrogenic donor impurity in GaAs–(Ga,Al)As quantum-well wires Villamil, Pablo
 2008
 3-4 p. 466-471
6 p.
 article
62 Polaronic effects on the collective excitation energies in a quantum wire Machado, P.C.M.
 2008
 3-4 p. 463-465
3 p.
 article
63 Porous SiC layers on Si nanowire surface Diaz Cano, A.I.
 2008
 3-4 p. 507-511
5 p.
 article
64 Porous silicon optical cavity structure applied to high sensitivity organic solvent sensor Huanca, Danilo R.
 2008
 3-4 p. 499-506
8 p.
 article
65 Preparation of vertically aligned bundles of Mo6S9− x I x (4.5<x<6) nanowires Rangus, M.
 2008
 3-4 p. 475-477
3 p.
 article
66 Progress of quantum electronics and the future of wireless technologies Mil'shtein, Samson
 2008
 3-4 p. 669-673
5 p.
 article
67 Quasi-bound electronic states in parabolic GaAs/AlGaAs quantum wells and barriers Jelev-Vlaev, S.
 2008
 3-4 p. 442-446
5 p.
 article
68 Realization of a GaAs/AlGaAs-based quantum cellular automata cell Perez-Martinez, F.
 2008
 3-4 p. 674-677
4 p.
 article
69 Reconfigurable 1×4InP-based optical switch May-Arrioja, D.A.
 2008
 3-4 p. 644-647
4 p.
 article
70 Resonant tunneling in graphene microstructures Milton Pereira Jr., J.
 2008
 3-4 p. 534-536
3 p.
 article
71 Revisiting tunneling via Si-quantum dots Tsu, R.
 2008
 3-4 p. 335-343
9 p.
 article
72 Role of Cooper pairs for the generation of entangled photon pairs from single quantum dots Suemune, I.
 2008
 3-4 p. 344-347
4 p.
 article
73 Self-diffusion slowdown in liquid indium and gallium metals under nanoconfinement Lee, Min Kai
 2008
 3-4 p. 566-569
4 p.
 article
74 Semiconductor terahertz detectors and absorption enhancement using plasmons Perera, A.G.U.
 2008
 3-4 p. 601-606
6 p.
 article
75 Shaping electron field emission by ultrathin multilayered structure cathodes Semet, V.
 2008
 3-4 p. 607-616
10 p.
 article
76 Silicon in functional epitaxial oxides: A new group of nanostructures Fissel, A.
 2008
 3-4 p. 512-517
6 p.
 article
77 Single electron transport in a free-standing quantum dot Chorley, S.J.
 2008
 3-4 p. 314-317
4 p.
 article
78 Single-peak excitonic emission of CdSe ultra-thin quantum wells finished with fractional monolayers Alfaro-Martínez, Adrián
 2008
 3-4 p. 594-596
3 p.
 article
79 Spin effect on the resonant tunneling characteristics of a double-barrier heterostructures under longitudinal stresses Paredes Gutiérrez, H.
 2008
 3-4 p. 635-637
3 p.
 article
80 Spin polarization in ordered and disordered double-perovskites Aguilar, B.
 2008
 3-4 p. 560-562
3 p.
 article
81 Study of the electronic fundamental transition of zincblende InN/InGaN quantum wells Contreras-Solorio, D.A.
 2008
 3-4 p. 435-437
3 p.
 article
82 Study of the recombination around the excitonic region of MBE ZnSe:Cl thin films Martínez-Cantón, A.E.
 2008
 3-4 p. 582-585
4 p.
 article
83 Synthesis and photoluminescence of Y2O3:Yb3+–Er3+ nanofibers Martínez, A.
 2008
 3-4 p. 551-555
5 p.
 article
84 Synthesis, characterization and spectroscopy of carbon based nanoscale materials Segura, R.
 2008
 3-4 p. 529-533
5 p.
 article
85 Tb 0.5 Bi 0.5 MnO 3 : New material. A DFT study Grizalez, Miguel
 2008
 3-4 p. 563-565
3 p.
 article
86 The effect of complex and negative indices in the transmission of electromagnetic waves through superlattices Pereyra, P.
 2008
 3-4 p. 394-397
4 p.
 article
87 Thermionic refrigeration in low-dimensional structures O’Dwyer, M.F.
 2008
 3-4 p. 597-600
4 p.
 article
88 Thermoelectric power factor of LSCoO compounds Moreno, L.C.
 2008
 3-4 p. 548-550
3 p.
 article
89 The role of surface roughness on the electron confinement in semiconductor quantum rings Chaves, A.
 2008
 3-4 p. 455-458
4 p.
 article
90 Threshold analysis of highly detuned long-wavelength GaAs-based GaInNAsSb/GaNAsQWVCSELs Gutowski, Krzysztof
 2008
 3-4 p. 641-643
3 p.
 article
91 Transport properties of graphene nanoribbon heterostructures Rosales, L.
 2008
 3-4 p. 537-540
4 p.
 article
92 Tuning of the optical properties of [11k] grown InAs quantum dots by the capping layer Mlinar, V.
 2008
 3-4 p. 359-361
3 p.
 article
93 Ultra flexible SiGe/Si/Cr nanosprings Grützmacher, D.
 2008
 3-4 p. 478-481
4 p.
 article
94 Vacuum UV spectroscopic ellipsometry study on Ga 1 - x Cr x N ( 0 ⩽ x ⩽ 0.1 ) alloy films Ghong, T.H.
 2008
 3-4 p. 541-543
3 p.
 article
95 Vertically coupled quantum dots charged by exciton Mikhailov, I.D.
 2008
 3-4 p. 378-382
5 p.
 article
96 Very shallow boron junctions in Si by implantation and SOD diffusion obtained by RTP Plaza Castillo, J.
 2008
 3-4 p. 678-681
4 p.
 article
97 Vibrational states in low-dimensional structures: An application to silicon quantum wires Alfaro, Pedro
 2008
 3-4 p. 472-474
3 p.
 article
                             97 results found
 
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