| no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
| 1 |
A comprehensive analytical study of an undoped symmetrical double-gate MOSFET after considering quantum confinement parameter
|
Wen, Tiw Pei
|
|
2010
|
|
2-3 |
p. 162-170
9 p.
|
article
|
| 2 |
Advanced materials welcomed at IEDM
|
McDonald, Jo Ann
|
|
1995
|
|
2-3 |
p. xv-xviii
nvt p.
|
article
|
| 3 |
Alcohol sensors based on SWNT as chemical sensors: Monte Carlo and Langevin dynamics simulation
|
Mahdavian, L.
|
|
2010
|
|
2-3 |
p. 142-149
8 p.
|
article
|
| 4 |
Algebraic microscopic approach to drift-diffusion
|
Orlowski, Marius
|
|
1995
|
|
2-3 |
p. 243-248
6 p.
|
article
|
| 5 |
A low-power 2.45GHz WPAN modulator/demodulator
|
Wang, Chua-Chin
|
|
2010
|
|
2-3 |
p. 150-154
5 p.
|
article
|
| 6 |
An analytical approach to dynamic crosstalk in coupled interconnects
|
Kaushik, Brajesh Kumar
|
|
2010
|
|
2-3 |
p. 85-92
8 p.
|
article
|
| 7 |
A novel spread-spectrum clock generator for suppressing conducted EMI in switching power supply
|
Guo, Haiyan
|
|
2010
|
|
2-3 |
p. 93-98
6 p.
|
article
|
| 8 |
Application of genetic algorithm in computing the tradeoffs between power consumption versus delay in digital integrated circuit design
|
Sosa, J.
|
|
2010
|
|
2-3 |
p. 135-141
7 p.
|
article
|
| 9 |
A step-up transformer impedance transformation technique for efficient power harvesting of passive transponders
|
Soltani, Nima
|
|
2010
|
|
2-3 |
p. 75-84
10 p.
|
article
|
| 10 |
Atomistic evaluation of diffusion theories for the diffusion of dopants in vacancy gradients
|
List, S.
|
|
1995
|
|
2-3 |
p. 261-264
4 p.
|
article
|
| 11 |
BMFET versus BJT in reverse bias safe operations
|
Busatto, G.
|
|
1996
|
|
2-3 |
p. 243-250
8 p.
|
article
|
| 12 |
CAESAR: The virtual IC factory as an integrated TCAD user environment
|
Axelrad, V.
|
|
1995
|
|
2-3 |
p. 191-202
12 p.
|
article
|
| 13 |
Calculation of the blocking capability of SOI power devices under the influence of interconnections
|
Falck, Elmar
|
|
1996
|
|
2-3 |
p. 201-207
7 p.
|
article
|
| 14 |
Consistent treatment of carrier emission and capture kinetics in electrothermal and energy transport models
|
Wachutka, Gerhard
|
|
1995
|
|
2-3 |
p. 307-315
9 p.
|
article
|
| 15 |
Defect detection of IC wafer based on two-dimension wavelet transform
|
Liu, Hongxia
|
|
2010
|
|
2-3 |
p. 171-177
7 p.
|
article
|
| 16 |
Device modelling for the 1990s
|
Kosina, H.
|
|
1995
|
|
2-3 |
p. 217-233
17 p.
|
article
|
| 17 |
Didactical concepts and tools for explaining power electronics applications
|
Kern, Ansgar
|
|
1996
|
|
2-3 |
p. 139-147
9 p.
|
article
|
| 18 |
Editorial board
|
|
|
2010
|
|
2-3 |
p. IFC-
1 p.
|
article
|
| 19 |
Educational issues for power semiconductor devices
|
Spirito, Paolo
|
|
1996
|
|
2-3 |
p. 109-120
12 p.
|
article
|
| 20 |
Educational software for power VDMOS transistors
|
Prijić, Z.
|
|
1996
|
|
2-3 |
p. 131-138
8 p.
|
article
|
| 21 |
Electro-elastic simulation of a piezoresistive pressure sensor
|
Ciampolini, P.
|
|
1995
|
|
2-3 |
p. 265-272
8 p.
|
article
|
| 22 |
Experimental and numerical analysis of GTO's snubberless turn-off operations
|
Khatir, Z.
|
|
1996
|
|
2-3 |
p. 231-241
11 p.
|
article
|
| 23 |
First international workshop on growth, characterization and exploitation of epitaxial III–V compound semiconductors on novel index surfaces, Trento (Italy), 4–7 December 1994
|
Henini, M.
|
|
1995
|
|
2-3 |
p. xix-xxiii
nvt p.
|
article
|
| 24 |
Guest editorial
|
Stojadinović, Ninoslav D.
|
|
1995
|
|
2-3 |
p. 77-78
2 p.
|
article
|
| 25 |
High speed semiconductor devices: Circuit aspects and fundamental behaviour
|
Henini, M.
|
|
1995
|
|
2-3 |
p. xxviii-
1 p.
|
article
|
| 26 |
High-speed VLSI interconnections: Modeling analysis and simulation
|
Harris, M.S.
|
|
1995
|
|
2-3 |
p. xxx-
1 p.
|
article
|
| 27 |
High voltage wiring using biased polysilicon field plates
|
Murray, A.F.J.
|
|
1996
|
|
2-3 |
p. 209-215
7 p.
|
article
|
| 28 |
InP HBTs: Growth, processing and applications
|
Henini, M.
|
|
1995
|
|
2-3 |
p. xxviii-xxix
nvt p.
|
article
|
| 29 |
Introduction to neural networks
|
Hurst, S.L.
|
|
1995
|
|
2-3 |
p. xxx-
1 p.
|
article
|
| 30 |
Lifetime calculations of MOSFETs using depth-dependent non-local impact ionization
|
van Dort, M.J.
|
|
1995
|
|
2-3 |
p. 301-305
5 p.
|
article
|
| 31 |
List of reviewer
|
|
|
1996
|
|
2-3 |
p. 251-
1 p.
|
article
|
| 32 |
Mechanical stress simulation during gate formation of MOS devices considering crystallization-induced stress of phosphorus-doped silicon thin films
|
Miura, Hideo
|
|
1995
|
|
2-3 |
p. 249-253
5 p.
|
article
|
| 33 |
Modelling and improving the on-resistance of LDMOS RESURF devices
|
Charitat, G.
|
|
1996
|
|
2-3 |
p. 181-190
10 p.
|
article
|
| 34 |
Modelling high concentration boron diffusion with dynamic clustering: influence of the initial conditions
|
Baccus, Bruno
|
|
1995
|
|
2-3 |
p. 235-242
8 p.
|
article
|
| 35 |
MOSFET models for VLSI circuit simulation
|
Arora, N.
|
|
1995
|
|
2-3 |
p. xxvi-xxvii
nvt p.
|
article
|
| 36 |
Multigrid methods for process simulation
|
Joppich, W.
|
|
1995
|
|
2-3 |
p. xxvii-xxviii
nvt p.
|
article
|
| 37 |
New lossless inductance simulators realization using a minimum active and passive components
|
Kaçar, Fırat
|
|
2010
|
|
2-3 |
p. 109-113
5 p.
|
article
|
| 38 |
News and updates in device application, process, and materials, being applied in today's microelectronics industry
|
|
|
1996
|
|
2-3 |
p. i-xxiv
nvt p.
|
article
|
| 39 |
News update
|
|
|
1995
|
|
2-3 |
p. i-vii
nvt p.
|
article
|
| 40 |
NTT develops prototype nanostructure silicon single-electron transistor operating near room temperature
|
|
|
1995
|
|
2-3 |
p. viii-x
nvt p.
|
article
|
| 41 |
Numerical simulation of the insulated base MOS-controlled thyristor
|
Flores, D.
|
|
1996
|
|
2-3 |
p. 177-180
4 p.
|
article
|
| 42 |
Optimal placement of heat generating components at various levels of electronics packaging
|
Suwa, Tohru
|
|
2010
|
|
2-3 |
p. 129-134
6 p.
|
article
|
| 43 |
Physical modelling of the enhanced diffusion of boron due to ion implantation in thin-base npn bipolar transistors
|
Mouis, M.
|
|
1995
|
|
2-3 |
p. 255-259
5 p.
|
article
|
| 44 |
Power semiconductor devices — continuous development
|
Grant, Duncan
|
|
1996
|
|
2-3 |
p. 161-176
16 p.
|
article
|
| 45 |
Power semiconductor devices — continuous development
|
Stojadinović, N.
|
|
1996
|
|
2-3 |
p. 105-107
3 p.
|
article
|
| 46 |
Process design and optimization of the channel doping profile in power VDMOSFETs
|
Pantić, D.
|
|
1996
|
|
2-3 |
p. 191-200
10 p.
|
article
|
| 47 |
Process simulation for the 1990s
|
Stippel, H.
|
|
1995
|
|
2-3 |
p. 203-215
13 p.
|
article
|
| 48 |
Process variation-aware performance analysis of asynchronous circuits
|
Raji, Mohsen
|
|
2010
|
|
2-3 |
p. 99-108
10 p.
|
article
|
| 49 |
Properties of Group III nitrides
|
Henini, M.
|
|
1995
|
|
2-3 |
p. xxix-xxx
nvt p.
|
article
|
| 50 |
Resistorless realization of current-mode first-order allpass filter using current differencing transconductance amplifiers
|
Tangsrirat, Worapong
|
|
2010
|
|
2-3 |
p. 178-183
6 p.
|
article
|
| 51 |
SEMDEM — educational software for bipolar semiconductor devices
|
Turowski, Marek
|
|
1996
|
|
2-3 |
p. 121-129
9 p.
|
article
|
| 52 |
Simplified model for ballistic current–voltage characteristic in cylindrical nanowires
|
Kurniawan, Oka
|
|
2010
|
|
2-3 |
p. 155-161
7 p.
|
article
|
| 53 |
Simulation of power semiconductor systems as an educational tool
|
Žáček, Jaroslav
|
|
1996
|
|
2-3 |
p. 149-159
11 p.
|
article
|
| 54 |
Simulation of transient thermal effects during GTO turn off
|
Mawby, P.A.
|
|
1996
|
|
2-3 |
p. 217-229
13 p.
|
article
|
| 55 |
Spurious signals due to amplitude quantization in direct digital frequency synthesizers
|
Tian, Xinguang
|
|
2010
|
|
2-3 |
p. 114-120
7 p.
|
article
|
| 56 |
Technology CAD at AT&T
|
Lloyd, Peter
|
|
1995
|
|
2-3 |
p. 79-97
19 p.
|
article
|
| 57 |
Technology CAD at OKI
|
Ueda, J.
|
|
1995
|
|
2-3 |
p. 159-175
17 p.
|
article
|
| 58 |
Technology CAD at Stanford University: physics, algorithms, software and applications
|
Dutton, Robert W.
|
|
1995
|
|
2-3 |
p. 99-111
13 p.
|
article
|
| 59 |
The design and optimization methodology of a low-distortion sub- μ W sample-and-hold stage for weak bio-currents
|
Yuan, Jie
|
|
2010
|
|
2-3 |
p. 121-128
8 p.
|
article
|
| 60 |
The 1994 international conference on electronic materials (ICEM 94)
|
Tu, Charles W.
|
|
1995
|
|
2-3 |
p. xi-xiii
nvt p.
|
article
|
| 61 |
The MASTER Framework
|
Hopper, Peter J.
|
|
1995
|
|
2-3 |
p. 177-190
14 p.
|
article
|
| 62 |
The stationary semiconductor device equations
|
Markowich, P.A.
|
|
1995
|
|
2-3 |
p. xxv-xxvi
nvt p.
|
article
|
| 63 |
The STORM technology CAD system
|
Lorenz, J.
|
|
1995
|
|
2-3 |
p. 113-135
23 p.
|
article
|
| 64 |
The Viennese integrated system for technology CAD applications
|
Halama, S.
|
|
1995
|
|
2-3 |
p. 137-158
22 p.
|
article
|
| 65 |
Three-dimensional implementation of a unified transport model
|
Pierantoni, A.
|
|
1995
|
|
2-3 |
p. 287-300
14 p.
|
article
|
| 66 |
Two-dimensional numerical simulations of high-efficiency silicon solar cells
|
Heiser, G.
|
|
1995
|
|
2-3 |
p. 273-286
14 p.
|
article
|
Journal description