nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
A comprehensive analytical study of an undoped symmetrical double-gate MOSFET after considering quantum confinement parameter
|
Wen, Tiw Pei |
|
2010 |
|
2-3 |
p. 162-170 9 p. |
artikel |
2 |
Advanced materials welcomed at IEDM
|
McDonald, Jo Ann |
|
1995 |
|
2-3 |
p. xv-xviii nvt p. |
artikel |
3 |
Alcohol sensors based on SWNT as chemical sensors: Monte Carlo and Langevin dynamics simulation
|
Mahdavian, L. |
|
2010 |
|
2-3 |
p. 142-149 8 p. |
artikel |
4 |
Algebraic microscopic approach to drift-diffusion
|
Orlowski, Marius |
|
1995 |
|
2-3 |
p. 243-248 6 p. |
artikel |
5 |
A low-power 2.45GHz WPAN modulator/demodulator
|
Wang, Chua-Chin |
|
2010 |
|
2-3 |
p. 150-154 5 p. |
artikel |
6 |
An analytical approach to dynamic crosstalk in coupled interconnects
|
Kaushik, Brajesh Kumar |
|
2010 |
|
2-3 |
p. 85-92 8 p. |
artikel |
7 |
A novel spread-spectrum clock generator for suppressing conducted EMI in switching power supply
|
Guo, Haiyan |
|
2010 |
|
2-3 |
p. 93-98 6 p. |
artikel |
8 |
Application of genetic algorithm in computing the tradeoffs between power consumption versus delay in digital integrated circuit design
|
Sosa, J. |
|
2010 |
|
2-3 |
p. 135-141 7 p. |
artikel |
9 |
A step-up transformer impedance transformation technique for efficient power harvesting of passive transponders
|
Soltani, Nima |
|
2010 |
|
2-3 |
p. 75-84 10 p. |
artikel |
10 |
Atomistic evaluation of diffusion theories for the diffusion of dopants in vacancy gradients
|
List, S. |
|
1995 |
|
2-3 |
p. 261-264 4 p. |
artikel |
11 |
BMFET versus BJT in reverse bias safe operations
|
Busatto, G. |
|
1996 |
|
2-3 |
p. 243-250 8 p. |
artikel |
12 |
CAESAR: The virtual IC factory as an integrated TCAD user environment
|
Axelrad, V. |
|
1995 |
|
2-3 |
p. 191-202 12 p. |
artikel |
13 |
Calculation of the blocking capability of SOI power devices under the influence of interconnections
|
Falck, Elmar |
|
1996 |
|
2-3 |
p. 201-207 7 p. |
artikel |
14 |
Consistent treatment of carrier emission and capture kinetics in electrothermal and energy transport models
|
Wachutka, Gerhard |
|
1995 |
|
2-3 |
p. 307-315 9 p. |
artikel |
15 |
Defect detection of IC wafer based on two-dimension wavelet transform
|
Liu, Hongxia |
|
2010 |
|
2-3 |
p. 171-177 7 p. |
artikel |
16 |
Device modelling for the 1990s
|
Kosina, H. |
|
1995 |
|
2-3 |
p. 217-233 17 p. |
artikel |
17 |
Didactical concepts and tools for explaining power electronics applications
|
Kern, Ansgar |
|
1996 |
|
2-3 |
p. 139-147 9 p. |
artikel |
18 |
Editorial board
|
|
|
2010 |
|
2-3 |
p. IFC- 1 p. |
artikel |
19 |
Educational issues for power semiconductor devices
|
Spirito, Paolo |
|
1996 |
|
2-3 |
p. 109-120 12 p. |
artikel |
20 |
Educational software for power VDMOS transistors
|
Prijić, Z. |
|
1996 |
|
2-3 |
p. 131-138 8 p. |
artikel |
21 |
Electro-elastic simulation of a piezoresistive pressure sensor
|
Ciampolini, P. |
|
1995 |
|
2-3 |
p. 265-272 8 p. |
artikel |
22 |
Experimental and numerical analysis of GTO's snubberless turn-off operations
|
Khatir, Z. |
|
1996 |
|
2-3 |
p. 231-241 11 p. |
artikel |
23 |
First international workshop on growth, characterization and exploitation of epitaxial III–V compound semiconductors on novel index surfaces, Trento (Italy), 4–7 December 1994
|
Henini, M. |
|
1995 |
|
2-3 |
p. xix-xxiii nvt p. |
artikel |
24 |
Guest editorial
|
Stojadinović, Ninoslav D. |
|
1995 |
|
2-3 |
p. 77-78 2 p. |
artikel |
25 |
High speed semiconductor devices: Circuit aspects and fundamental behaviour
|
Henini, M. |
|
1995 |
|
2-3 |
p. xxviii- 1 p. |
artikel |
26 |
High-speed VLSI interconnections: Modeling analysis and simulation
|
Harris, M.S. |
|
1995 |
|
2-3 |
p. xxx- 1 p. |
artikel |
27 |
High voltage wiring using biased polysilicon field plates
|
Murray, A.F.J. |
|
1996 |
|
2-3 |
p. 209-215 7 p. |
artikel |
28 |
InP HBTs: Growth, processing and applications
|
Henini, M. |
|
1995 |
|
2-3 |
p. xxviii-xxix nvt p. |
artikel |
29 |
Introduction to neural networks
|
Hurst, S.L. |
|
1995 |
|
2-3 |
p. xxx- 1 p. |
artikel |
30 |
Lifetime calculations of MOSFETs using depth-dependent non-local impact ionization
|
van Dort, M.J. |
|
1995 |
|
2-3 |
p. 301-305 5 p. |
artikel |
31 |
List of reviewer
|
|
|
1996 |
|
2-3 |
p. 251- 1 p. |
artikel |
32 |
Mechanical stress simulation during gate formation of MOS devices considering crystallization-induced stress of phosphorus-doped silicon thin films
|
Miura, Hideo |
|
1995 |
|
2-3 |
p. 249-253 5 p. |
artikel |
33 |
Modelling and improving the on-resistance of LDMOS RESURF devices
|
Charitat, G. |
|
1996 |
|
2-3 |
p. 181-190 10 p. |
artikel |
34 |
Modelling high concentration boron diffusion with dynamic clustering: influence of the initial conditions
|
Baccus, Bruno |
|
1995 |
|
2-3 |
p. 235-242 8 p. |
artikel |
35 |
MOSFET models for VLSI circuit simulation
|
Arora, N. |
|
1995 |
|
2-3 |
p. xxvi-xxvii nvt p. |
artikel |
36 |
Multigrid methods for process simulation
|
Joppich, W. |
|
1995 |
|
2-3 |
p. xxvii-xxviii nvt p. |
artikel |
37 |
New lossless inductance simulators realization using a minimum active and passive components
|
Kaçar, Fırat |
|
2010 |
|
2-3 |
p. 109-113 5 p. |
artikel |
38 |
News and updates in device application, process, and materials, being applied in today's microelectronics industry
|
|
|
1996 |
|
2-3 |
p. i-xxiv nvt p. |
artikel |
39 |
News update
|
|
|
1995 |
|
2-3 |
p. i-vii nvt p. |
artikel |
40 |
NTT develops prototype nanostructure silicon single-electron transistor operating near room temperature
|
|
|
1995 |
|
2-3 |
p. viii-x nvt p. |
artikel |
41 |
Numerical simulation of the insulated base MOS-controlled thyristor
|
Flores, D. |
|
1996 |
|
2-3 |
p. 177-180 4 p. |
artikel |
42 |
Optimal placement of heat generating components at various levels of electronics packaging
|
Suwa, Tohru |
|
2010 |
|
2-3 |
p. 129-134 6 p. |
artikel |
43 |
Physical modelling of the enhanced diffusion of boron due to ion implantation in thin-base npn bipolar transistors
|
Mouis, M. |
|
1995 |
|
2-3 |
p. 255-259 5 p. |
artikel |
44 |
Power semiconductor devices — continuous development
|
Grant, Duncan |
|
1996 |
|
2-3 |
p. 161-176 16 p. |
artikel |
45 |
Power semiconductor devices — continuous development
|
Stojadinović, N. |
|
1996 |
|
2-3 |
p. 105-107 3 p. |
artikel |
46 |
Process design and optimization of the channel doping profile in power VDMOSFETs
|
Pantić, D. |
|
1996 |
|
2-3 |
p. 191-200 10 p. |
artikel |
47 |
Process simulation for the 1990s
|
Stippel, H. |
|
1995 |
|
2-3 |
p. 203-215 13 p. |
artikel |
48 |
Process variation-aware performance analysis of asynchronous circuits
|
Raji, Mohsen |
|
2010 |
|
2-3 |
p. 99-108 10 p. |
artikel |
49 |
Properties of Group III nitrides
|
Henini, M. |
|
1995 |
|
2-3 |
p. xxix-xxx nvt p. |
artikel |
50 |
Resistorless realization of current-mode first-order allpass filter using current differencing transconductance amplifiers
|
Tangsrirat, Worapong |
|
2010 |
|
2-3 |
p. 178-183 6 p. |
artikel |
51 |
SEMDEM — educational software for bipolar semiconductor devices
|
Turowski, Marek |
|
1996 |
|
2-3 |
p. 121-129 9 p. |
artikel |
52 |
Simplified model for ballistic current–voltage characteristic in cylindrical nanowires
|
Kurniawan, Oka |
|
2010 |
|
2-3 |
p. 155-161 7 p. |
artikel |
53 |
Simulation of power semiconductor systems as an educational tool
|
Žáček, Jaroslav |
|
1996 |
|
2-3 |
p. 149-159 11 p. |
artikel |
54 |
Simulation of transient thermal effects during GTO turn off
|
Mawby, P.A. |
|
1996 |
|
2-3 |
p. 217-229 13 p. |
artikel |
55 |
Spurious signals due to amplitude quantization in direct digital frequency synthesizers
|
Tian, Xinguang |
|
2010 |
|
2-3 |
p. 114-120 7 p. |
artikel |
56 |
Technology CAD at AT&T
|
Lloyd, Peter |
|
1995 |
|
2-3 |
p. 79-97 19 p. |
artikel |
57 |
Technology CAD at OKI
|
Ueda, J. |
|
1995 |
|
2-3 |
p. 159-175 17 p. |
artikel |
58 |
Technology CAD at Stanford University: physics, algorithms, software and applications
|
Dutton, Robert W. |
|
1995 |
|
2-3 |
p. 99-111 13 p. |
artikel |
59 |
The design and optimization methodology of a low-distortion sub- μ W sample-and-hold stage for weak bio-currents
|
Yuan, Jie |
|
2010 |
|
2-3 |
p. 121-128 8 p. |
artikel |
60 |
The 1994 international conference on electronic materials (ICEM 94)
|
Tu, Charles W. |
|
1995 |
|
2-3 |
p. xi-xiii nvt p. |
artikel |
61 |
The MASTER Framework
|
Hopper, Peter J. |
|
1995 |
|
2-3 |
p. 177-190 14 p. |
artikel |
62 |
The stationary semiconductor device equations
|
Markowich, P.A. |
|
1995 |
|
2-3 |
p. xxv-xxvi nvt p. |
artikel |
63 |
The STORM technology CAD system
|
Lorenz, J. |
|
1995 |
|
2-3 |
p. 113-135 23 p. |
artikel |
64 |
The Viennese integrated system for technology CAD applications
|
Halama, S. |
|
1995 |
|
2-3 |
p. 137-158 22 p. |
artikel |
65 |
Three-dimensional implementation of a unified transport model
|
Pierantoni, A. |
|
1995 |
|
2-3 |
p. 287-300 14 p. |
artikel |
66 |
Two-dimensional numerical simulations of high-efficiency silicon solar cells
|
Heiser, G. |
|
1995 |
|
2-3 |
p. 273-286 14 p. |
artikel |