| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A general method in synthesis of pass-transistor circuits
|
Marković, D
|
|
2000
|
|
11-12 |
p. 991-998
8 p.
|
artikel
|
| 2 |
Amorphous silicon detector and thin film transistor technology for large-area imaging of X-rays
|
Nathan, A
|
|
2000
|
|
11-12 |
p. 883-891
9 p.
|
artikel
|
| 3 |
An improved technology of 6H-SiC power diodes
|
Badila, M.
|
|
2000
|
|
11-12 |
p. 955-962
8 p.
|
artikel
|
| 4 |
Atomic force microscopy investigation of dislocation structures and deformation characteristics in neutron-irradiated silicon detectors
|
Golan, G
|
|
2000
|
|
11-12 |
p. 937-944
8 p.
|
artikel
|
| 5 |
Computer-aided test flow in core-based design
|
Zivkovic, V.A
|
|
2000
|
|
11-12 |
p. 999-1008
10 p.
|
artikel
|
| 6 |
Crosstalk effects in mixed-signal ICs in deep submicron digital CMOS technology
|
Liberali, V.
|
|
2000
|
|
11-12 |
p. 893-904
12 p.
|
artikel
|
| 7 |
Editorial
|
Stojadinovic, N.
|
|
2000
|
|
11-12 |
p. 837-
1 p.
|
artikel
|
| 8 |
Evaluation of electron pressure effect in low-field drain region of submicron GaAs MESFET using ensemble Monte Carlo simulation
|
Yamada, Y
|
|
2000
|
|
11-12 |
p. 923-927
5 p.
|
artikel
|
| 9 |
Index
|
|
|
2000
|
|
11-12 |
p. XI-XIII
nvt p.
|
artikel
|
| 10 |
Integration challenges in sub-0.25μm CMOS-based technologies
|
Badenes, G
|
|
2000
|
|
11-12 |
p. 861-871
11 p.
|
artikel
|
| 11 |
Investigation of the thermal performance of micro-whisker structured silicon heat spreaders for power devices
|
Hanreich, G
|
|
2000
|
|
11-12 |
p. 969-973
5 p.
|
artikel
|
| 12 |
Microelectronics and photonics — the future
|
Suhir, E.
|
|
2000
|
|
11-12 |
p. 839-851
13 p.
|
artikel
|
| 13 |
Mixed-mode device simulation
|
Grasser, T
|
|
2000
|
|
11-12 |
p. 873-881
9 p.
|
artikel
|
| 14 |
Numerical analysis of SOI LDMOS using a recessed source and a trench drain
|
Yoo, S.-J
|
|
2000
|
|
11-12 |
p. 963-967
5 p.
|
artikel
|
| 15 |
Optimised high-frequency performance of Auger-suppressed magnetoconcentration photoconductors
|
Jakšić, Z
|
|
2000
|
|
11-12 |
p. 981-990
10 p.
|
artikel
|
| 16 |
Quantum engineering of nanoelectronic devices: the role of quantum emission in limiting drift velocity and diffusion coefficient
|
Arora, V.K
|
|
2000
|
|
11-12 |
p. 853-859
7 p.
|
artikel
|
| 17 |
rescuer — the new solution in multidomain simulations
|
Zubert, M.
|
|
2000
|
|
11-12 |
p. 945-954
10 p.
|
artikel
|
| 18 |
Silicon microstructure for precise measurements of mechanical moments
|
Vujanic, A
|
|
2000
|
|
11-12 |
p. 975-980
6 p.
|
artikel
|
| 19 |
Study of the DC biasing effect on insertion losses in high-frequency interconnections
|
Gospodinova, M.
|
|
2000
|
|
11-12 |
p. 1009-1014
6 p.
|
artikel
|
| 20 |
The design and development of a novel flyback planar transformer for high frequency switch mode DC–DC converter applications
|
Arshak, K.I.
|
|
2000
|
|
11-12 |
p. 929-935
7 p.
|
artikel
|
| 21 |
The influence of strong electric field on the interface in the Al–SiO2-n-Si Auger transistor
|
Rogachev, A.A.
|
|
2000
|
|
11-12 |
p. 905-911
7 p.
|
artikel
|
| 22 |
Thorough analysis of quantum mechanical effects on MOS structure characteristics in threshold region
|
Ma, Yutao
|
|
2000
|
|
11-12 |
p. 913-921
9 p.
|
artikel
|
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