| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
About an influence of Ar ion beam of very low energy on a-Si:H properties
|
Kopáni, M
|
|
2002
|
67 |
1 |
p. 149-153
5 p.
|
artikel
|
| 2 |
Adsorption of GeH2 on the bare and hydrogenated Ge(001) surfaces
|
Çakmak, M
|
|
2002
|
67 |
1 |
p. 21-25
5 p.
|
artikel
|
| 3 |
Characteristics of interfacial bonding distribution of Gd2O3–GaAs structure
|
Yang, Jun-Kyu
|
|
2002
|
67 |
1 |
p. 161-167
7 p.
|
artikel
|
| 4 |
Effect of methanol concentration on flatband potential shift of n-type Si in CH3CN/CH3OH mixture containing a redox couple
|
Gabouze, N.
|
|
2002
|
67 |
1 |
p. 75-80
6 p.
|
artikel
|
| 5 |
Electrical properties of sulfur-passivated III–V compound devices
|
Eftekhari, G.
|
|
2002
|
67 |
1 |
p. 81-90
10 p.
|
artikel
|
| 6 |
Fermi-level pinning and passivation on the oxide-covered and bare silicon surfaces and interfaces
|
Mizsei, Janos
|
|
2002
|
67 |
1 |
p. 59-67
9 p.
|
artikel
|
| 7 |
Investigation on the interface formation of ambient-pressure-dried SiO2 aerogel film deposited on GaAs
|
Park, Sung-Woo
|
|
2002
|
67 |
1 |
p. 155-159
5 p.
|
artikel
|
| 8 |
Isotope effect in the adsorption of H and D on the Si(111) surface from electrolytes
|
Chikalova-Luzina, O.P.
|
|
2002
|
67 |
1 |
p. 27-30
4 p.
|
artikel
|
| 9 |
Modification of GaAs(100) and GaN(0001) surfaces by treatment in alcoholic sulfide solutions
|
Konenkova, Elena V
|
|
2002
|
67 |
1 |
p. 43-52
10 p.
|
artikel
|
| 10 |
[No title]
|
Szuber, Jacek
|
|
2002
|
67 |
1 |
p. 1-
1 p.
|
artikel
|
| 11 |
Photoelectron emission from heterojunctions with intralayers: band-offset changes vs. band-bending effects
|
Horn, K
|
|
2002
|
67 |
1 |
p. 115-123
9 p.
|
artikel
|
| 12 |
Properties of semiconductor surfaces covered with very thin insulating overlayers prepared by impacts of low-energy particles
|
Pinčı́k, E
|
|
2002
|
67 |
1 |
p. 131-141
11 p.
|
artikel
|
| 13 |
Rigorous analysis of photoluminescence efficiency for characterisation of electronic properties of InP(100) surfaces
|
Adamowicz, B
|
|
2002
|
67 |
1 |
p. 3-10
8 p.
|
artikel
|
| 14 |
Structures and electronic states of InAs (001) and (111)B surfaces passivated with sulfur studied by AES, LEED, UPS, XPS, and IPES
|
Fukuda, Y.
|
|
2002
|
67 |
1 |
p. 37-41
5 p.
|
artikel
|
| 15 |
Study and characterization of the structures Au/Al2O3/Si and Au/Al0/Al2O3/Si
|
Gruzza, B.
|
|
2002
|
67 |
1 |
p. 125-129
5 p.
|
artikel
|
| 16 |
Surface and bulk values of real part of refractive index of GaSe
|
Kępińska, M
|
|
2002
|
67 |
1 |
p. 143-147
5 p.
|
artikel
|
| 17 |
Surface passivation by dissociative molecular adsorption
|
Srivastava, G.P.
|
|
2002
|
67 |
1 |
p. 11-20
10 p.
|
artikel
|
| 18 |
Surface preparation and effective contact formation for GaAs surface
|
Kang, Min-Gu
|
|
2002
|
67 |
1 |
p. 91-100
10 p.
|
artikel
|
| 19 |
Thermal and plasma nitridation of GaSe crystal
|
Balitskii, O.A
|
|
2002
|
67 |
1 |
p. 69-73
5 p.
|
artikel
|
| 20 |
Tuning Schottky barrier heights by organic modification of metal-semiconductor contacts
|
Zahn, Dietrich R.T.
|
|
2002
|
67 |
1 |
p. 101-113
13 p.
|
artikel
|
| 21 |
XPS study of the surface Fermi level of (NH4)2S x -passivated GaAs(100) surface
|
Szuber, J
|
|
2002
|
67 |
1 |
p. 53-58
6 p.
|
artikel
|
| 22 |
Zn-induced features at the GaAs(110) surface: a first-principles study
|
Ferraz, A.C
|
|
2002
|
67 |
1 |
p. 31-35
5 p.
|
artikel
|
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