| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Activation of Si implanted in GaAs at high intensity As co-implantation
|
Akimov, A.N
|
|
2001
|
63 |
4 |
p. 491-494
|
artikel
|
| 2 |
Alloying of silicon on Ti6Al4V using high intensity pulsed plasma beams
|
Richter, E
|
|
2001
|
63 |
4 |
p. 523-527
|
artikel
|
| 3 |
Analysis of the wear process of nitrogen implanted HSS stamping dies
|
Narojczyk, J.
|
|
2001
|
63 |
4 |
p. 691-695
|
artikel
|
| 4 |
Application of high intensity pulsed ion and plasma beams in modification of materials
|
Piekoszewski, J
|
|
2001
|
63 |
4 |
p. 475-481
|
artikel
|
| 5 |
Application of ion beams to nuclear waste issues:
|
Thomé, Lionel
|
|
2001
|
63 |
4 |
p. 619-626
|
artikel
|
| 6 |
Cathode sputtering as a pre-treatment for gas nitriding
|
Baranowska, J
|
|
2001
|
63 |
4 |
p. 517-522
|
artikel
|
| 7 |
Changes in the structure and properties of TiN coatings irradiated with Ti ions of moderate energies
|
Andreyev, M
|
|
2001
|
63 |
4 |
p. 541-544
|
artikel
|
| 8 |
Changes of properties of selected glasses irradiated with gamma rays and neutrons: a short overview
|
Słowiński, B.
|
|
2001
|
63 |
4 |
p. 585-589
|
artikel
|
| 9 |
Damage evolution and track formation in crystalline InP and GaAs during swift Kr and Xe ion irradiation
|
Komarov, Fadei
|
|
2001
|
63 |
4 |
p. 657-663
|
artikel
|
| 10 |
Detection of secondary electrons in a retarding electric field
|
Slówko, W
|
|
2001
|
63 |
4 |
p. 463-467
|
artikel
|
| 11 |
Effect of plasma nitriding and TiN plasma deposition on stress corrosion cracking of 40HM steel
|
Lunarska, Ellina
|
|
2001
|
63 |
4 |
p. 469-473
|
artikel
|
| 12 |
Electrical properties of polyethylene modified by multistage ion implantation
|
Odzhaev, V.B
|
|
2001
|
63 |
4 |
p. 581-583
|
artikel
|
| 13 |
Electron and ion high-resolution interaction studies using sector field mass spectrometry: propane a case study
|
Fiegele, T
|
|
2001
|
63 |
4 |
p. 561-569
|
artikel
|
| 14 |
Evolution of mechanical properties in tool steel implanted with high energy nitrogen ions
|
Budzyński, P
|
|
2001
|
63 |
4 |
p. 737-742
|
artikel
|
| 15 |
Fluorination effects in electron-scattering processes—comparative study
|
Szmytkowski, Czesław
|
|
2001
|
63 |
4 |
p. 545-548
|
artikel
|
| 16 |
Formation of device isolation in GaAs with polyenergetic ion implantation
|
Komarov, F.F.
|
|
2001
|
63 |
4 |
p. 577-579
|
artikel
|
| 17 |
Generation of high-intensity pulsed ion and plasma beams for material processing
|
Werner, Z.
|
|
2001
|
63 |
4 |
p. 701-708
|
artikel
|
| 18 |
Gettering of metal impurities to cavities formed by hydrogen and helium implantation in silicon
|
Kamarou, Andrey
|
|
2001
|
63 |
4 |
p. 609-612
|
artikel
|
| 19 |
Hundred MeV heavy ion irradiation effect on boron diffusion in Si
|
Skuratov, V.A.
|
|
2001
|
63 |
4 |
p. 571-575
|
artikel
|
| 20 |
Hydrogen-ion implantation in GaAs
|
Gawlik, G
|
|
2001
|
63 |
4 |
p. 697-700
|
artikel
|
| 21 |
Influence of nitrogen ion implantation on tribological properties of tool steel NC10
|
Budzyński, P
|
|
2001
|
63 |
4 |
p. 731-736
|
artikel
|
| 22 |
In situ investigation of phase transitions of implanted silicon at powerful light irradiation
|
Fattakhov, Ya.V
|
|
2001
|
63 |
4 |
p. 649-655
|
artikel
|
| 23 |
Investigation of current sheet dynamics in the IPD accelerator
|
Rabiński, Marek
|
|
2001
|
63 |
4 |
p. 513-516
|
artikel
|
| 24 |
Investigation of ion implantation for fabrication of p–n junctions with modified silicon surface for photovoltaic devices
|
Jaroszewicz, B
|
|
2001
|
63 |
4 |
p. 721-724
|
artikel
|
| 25 |
Ion bombardment in surface passivation of GaAs
|
Synowiec, Z
|
|
2001
|
63 |
4 |
p. 487-490
|
artikel
|
| 26 |
Ion sputter induced surface morphology—biomedical implications
|
Kowalski, Z.W
|
|
2001
|
63 |
4 |
p. 603-608
|
artikel
|
| 27 |
Ion sputtering of microparticles in SIMS depth profile analysis
|
Konarski, Piotr
|
|
2001
|
63 |
4 |
p. 685-689
|
artikel
|
| 28 |
Ion-sputter-modification of metal targets
|
Wilk, J
|
|
2001
|
63 |
4 |
p. 597-601
|
artikel
|
| 29 |
Low energy Cs+ and Cl− ion implantation into Si — SIMS investigations
|
Hereć, J
|
|
2001
|
63 |
4 |
p. 743-748
|
artikel
|
| 30 |
Modification of single crystal stainless steel structure (Fe–Cr–Ni–Mn) by high-power ion beam
|
Pogrebnjak, A.D
|
|
2001
|
63 |
4 |
p. 483-486
|
artikel
|
| 31 |
Monte Carlo modeling of the IBAD growth of the optical films
|
Oleszkiewicz, Waldemar
|
|
2001
|
63 |
4 |
p. 613-617
|
artikel
|
| 32 |
Monte Carlo simulation of the concentration distribution of sputtered cathode material in glow discharge plasma
|
Hereć, J
|
|
2001
|
63 |
4 |
p. 507-512
|
artikel
|
| 33 |
Morphology of working environment microparticles
|
Konarski, Piotr
|
|
2001
|
63 |
4 |
p. 679-683
|
artikel
|
| 34 |
[No title]
|
Mączka, Dariusz
|
|
2001
|
63 |
4 |
p. 455-456
|
artikel
|
| 35 |
Optical properties and chemical structure of ion implanted a-SiC:H
|
Tsvetkova, T
|
|
2001
|
63 |
4 |
p. 749-753
|
artikel
|
| 36 |
Optical responses of ion implanted nanoparticles in silica and glass
|
Townsend, P.D
|
|
2001
|
63 |
4 |
p. 641-647
|
artikel
|
| 37 |
Plasma of the cathode zone of glow discharges and its interaction with the cathode surface
|
Wroński, Z
|
|
2001
|
63 |
4 |
p. 535-539
|
artikel
|
| 38 |
RBS and channeling studies of GaAs implanted with In+ ions
|
Kulik, M.
|
|
2001
|
63 |
4 |
p. 755-759
|
artikel
|
| 39 |
RBS and ellipsometric studies of near surface GaAs ion implanted layers
|
Kulik, M.
|
|
2001
|
63 |
4 |
p. 761-766
|
artikel
|
| 40 |
Secondary electron detector with a micro-porous plate for environmental SEM
|
Slówko, Witold
|
|
2001
|
63 |
4 |
p. 457-461
|
artikel
|
| 41 |
Simulation of two-beam ion implantation in the multilayer and multicomponent targets
|
Komarov, A.F
|
|
2001
|
63 |
4 |
p. 495-499
|
artikel
|
| 42 |
Size-dependent fragmentation of carbon dioxide clusters
|
Dąbek, Józef
|
|
2001
|
63 |
4 |
p. 555-560
|
artikel
|
| 43 |
Some current issues in the use and application of ionised plasma for silicon semiconductor processing research
|
Hurley, R.E
|
|
2001
|
63 |
4 |
p. 627-639
|
artikel
|
| 44 |
Spectrometer for the study of electron-assisted processes
|
Szmytkowski, Czesław
|
|
2001
|
63 |
4 |
p. 549-554
|
artikel
|
| 45 |
Structural and micromechanical properties of ion-beam mixed tungsten-on-steel system
|
Jagielski, J
|
|
2001
|
63 |
4 |
p. 671-677
|
artikel
|
| 46 |
Synchrotron investigation of strain profiles in the implanted semiconductors
|
Wierzchowski, W
|
|
2001
|
63 |
4 |
p. 767-773
|
artikel
|
| 47 |
The effect of nitrogen ion irradiation on the operational temperature regime of working surfaces of electrical contacts
|
Karwat, Czesław
|
|
2001
|
63 |
4 |
p. 665-669
|
artikel
|
| 48 |
The influence of calcium and/or phosphorus ion implantation on the structure and corrosion resistance of titanium
|
Krupa, D
|
|
2001
|
63 |
4 |
p. 715-719
|
artikel
|
| 49 |
The influence of high energy krypton ion irradiation on optical and electronic properties of diamond
|
Melnikov, A
|
|
2001
|
63 |
4 |
p. 725-730
|
artikel
|
| 50 |
The influence of the interaction potential on the fractal dimension of the collision cascade
|
Martan, Janusz
|
|
2001
|
63 |
4 |
p. 529-533
|
artikel
|
| 51 |
Transfer function model of a planar magnetron for control purposes
|
Stec, Andrzej
|
|
2001
|
63 |
4 |
p. 709-713
|
artikel
|
| 52 |
Using of the high-grade layered structures for the demonstration of the depth resolution of the RBS method
|
Kobzev, A.P
|
|
2001
|
63 |
4 |
p. 501-505
|
artikel
|
| 53 |
Vavilov–Cherenkov radiation emitted by heavy ions near the threshold
|
Ruzicka, J
|
|
2001
|
63 |
4 |
p. 591-595
|
artikel
|
| 54 |
Volume 63 author index
|
|
|
2001
|
63 |
4 |
p. IX-XI
|
artikel
|
| 55 |
Volume 63 contents
|
|
|
2001
|
63 |
4 |
p. III-VIII
|
artikel
|
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