| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
AC conductivity and dielectric properties of Sb2S3 films
|
Farid, A.M
|
|
2000
|
59 |
4 |
p. 932-939
8 p.
|
artikel
|
| 2 |
Anode surface temperature profile in MPD thrusters
|
Sheshadri, T.S
|
|
2000
|
59 |
4 |
p. 904-909
6 p.
|
artikel
|
| 3 |
An ultrahigh vacuum chemical vapor deposition system and its application to growth of nMOSFET and HBT structures
|
Luo, Guangli
|
|
2000
|
59 |
4 |
p. 927-931
5 p.
|
artikel
|
| 4 |
DC electric-field effect in bulk and thin-film Ge5As38Te57 chalcogenide glass
|
Abdel-All, A
|
|
2000
|
59 |
4 |
p. 845-853
9 p.
|
artikel
|
| 5 |
Effect of multiple scattering in the interaction of low-energy ions with the magnetite surfaces covered by xenon
|
Kim-Ngan, N.-T.H
|
|
2000
|
59 |
4 |
p. 868-876
9 p.
|
artikel
|
| 6 |
Gas-sensing properties of PdO-modified SnO2–Fe2O3 double-layer thin-film sensor prepared by PECVD technique
|
Tong, M.S
|
|
2000
|
59 |
4 |
p. 877-884
8 p.
|
artikel
|
| 7 |
Index
|
|
|
2000
|
59 |
4 |
p. XV-XVII
nvt p.
|
artikel
|
| 8 |
Passivation of GaAs surface by GaS
|
Islam, A.B.M.O
|
|
2000
|
59 |
4 |
p. 894-899
6 p.
|
artikel
|
| 9 |
Polycrystalline CuInSe2 thin films synthesized by microwave irradiation
|
Bernède, J.C
|
|
2000
|
59 |
4 |
p. 885-893
9 p.
|
artikel
|
| 10 |
Recent progress in plasma nitriding
|
Musil, J
|
|
2000
|
59 |
4 |
p. 940-951
12 p.
|
artikel
|
| 11 |
Temperature-programmed desorption (TPD) of water from iron, chromium, nickel and 304L stainless steel
|
Joly, J.P
|
|
2000
|
59 |
4 |
p. 854-867
14 p.
|
artikel
|
| 12 |
The absolute value of the degree of ionization in the electron-exchange theory of secondary ion emission of metals
|
Veksler, V.I
|
|
2000
|
59 |
4 |
p. 900-903
4 p.
|
artikel
|
| 13 |
The formation of Ti-silicides by a metal vapour vacuum arc ion source implantation and annealing process
|
Wang, S.B
|
|
2000
|
59 |
4 |
p. 919-926
8 p.
|
artikel
|
| 14 |
Thermal transpiration of helium and nitrogen in 50-μm bore silica capillaries
|
York, D.C
|
|
2000
|
59 |
4 |
p. 910-918
9 p.
|
artikel
|
Tijdschrift beschrijving