| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analysis of RHEED intensities during formations of the CaF2/Si(111) and MgO/YSi2−x /Si(100) interface
|
Mazurek, Piotr
|
|
2000
|
57 |
2 |
p. 229-236
8 p.
|
artikel
|
| 2 |
A novel sulfur-passivation method and magnetic overlayers on passivated III–V semiconductor surface
|
Xinyi, Zhang
|
|
2000
|
57 |
2 |
p. 145-155
11 p.
|
artikel
|
| 3 |
Application of high-frequency contactless method of PEM investigations to examine near-surface layer of Si and GaAs
|
Nowak, M.
|
|
2000
|
57 |
2 |
p. 237-242
6 p.
|
artikel
|
| 4 |
Characterization of interface states at Au/InSb/InP(100) Schottky barrier diodes as a function of frequency
|
Akkal, B.
|
|
2000
|
57 |
2 |
p. 219-228
10 p.
|
artikel
|
| 5 |
Chemical nitridation of GaAs(100) by hydrazine-sulfide water solutions
|
Berkovits, V.L.
|
|
2000
|
57 |
2 |
p. 201-207
7 p.
|
artikel
|
| 6 |
Computer analysis of photon-induced non-equilibrium phenomena at Si and AlGaAs surfaces
|
Adamowicz, Boguslawa
|
|
2000
|
57 |
2 |
p. 111-120
10 p.
|
artikel
|
| 7 |
Editorial
|
|
|
2000
|
57 |
2 |
p. 109-
1 p.
|
artikel
|
| 8 |
GaAs surface passivation by ultra-high vacuum deposition of chalcogen atoms
|
Zahn, Dietrich R.T
|
|
2000
|
57 |
2 |
p. 139-144
6 p.
|
artikel
|
| 9 |
Molecular-beam epitaxy of ZnSe-based heterostructures on Na2S-passivated GaAs substrates
|
L'vova, T.V.
|
|
2000
|
57 |
2 |
p. 163-169
7 p.
|
artikel
|
| 10 |
New procedure for determination of the interface Fermi level position for atomic hydrogen cleaned GaAs(100) surface using photoemission
|
Szuber, J.
|
|
2000
|
57 |
2 |
p. 209-217
9 p.
|
artikel
|
| 11 |
Passivation of compound-semiconductor surfaces for low-noise terahertz devices
|
Hartnagel, H.L.
|
|
2000
|
57 |
2 |
p. 179-188
10 p.
|
artikel
|
| 12 |
Real-time spectroscopic ellipsometry for III–V surface modifications Hydrogen passivation, oxidation and nitridation by plasma processing
|
Bruno, G.
|
|
2000
|
57 |
2 |
p. 189-199
11 p.
|
artikel
|
| 13 |
Some effects of (NH4)2S x treatment of n-GaAs surface on electrical characteristics of metal-SiO2–GaAs structures
|
Kochowski, S.
|
|
2000
|
57 |
2 |
p. 157-162
6 p.
|
artikel
|
| 14 |
Sulfide treatment of GaSb surface: influence on the LPE growth of InGaAsSb/AlGaAsSb heterostructures
|
Papis, E
|
|
2000
|
57 |
2 |
p. 171-178
8 p.
|
artikel
|
| 15 |
The deposition of transition metal layers on sulphur-terminated InP(100) surfaces studies by core level photoemission spectroscopy
|
Hughes, G.J.
|
|
2000
|
57 |
2 |
p. 131-138
8 p.
|
artikel
|
| 16 |
Theoretical modelling of semiconductor surfaces and interfaces
|
Srivastava, G.P.
|
|
2000
|
57 |
2 |
p. 121-129
9 p.
|
artikel
|
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