nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
A low-energy ion beam system for studying energetic ion deposition on Silicon surfaces
|
Shoji, Fumiya |
|
1999 |
53 |
3-4 |
p. 459-464 6 p. |
artikel |
2 |
Analysis of photoemission lines in silicon nitrided layers formed by low-energy nitrogen ion implantation in silicon
|
Benkherourou, O. |
|
1999 |
53 |
3-4 |
p. 427-433 7 p. |
artikel |
3 |
Book review
|
|
|
1999 |
53 |
3-4 |
p. 481- 1 p. |
artikel |
4 |
Energy exponents in thermal spike models of interface mixing
|
Carter, G. |
|
1999 |
53 |
3-4 |
p. 399-403 5 p. |
artikel |
5 |
Erratum
|
|
|
1999 |
53 |
3-4 |
p. 483-485 3 p. |
artikel |
6 |
HREM and nanoindentation studies of BN:C films deposited by reactive sputtering from a B4C target
|
Johansson, M.P. |
|
1999 |
53 |
3-4 |
p. 451-457 7 p. |
artikel |
7 |
Influence of the inhomogeneity of a focused photon beam on the stability of the ion current in an ion source with an effusion molecular beam
|
Michalak, Leszek |
|
1999 |
53 |
3-4 |
p. 465-472 8 p. |
artikel |
8 |
Mechanical, electrical and optical properties of a-C:H:N films deposited by plasma CVD technique
|
Chakrabarti, K. |
|
1999 |
53 |
3-4 |
p. 405-413 9 p. |
artikel |
9 |
Optical and electrical properties of vacuum evaporated In doped Se amorphous thin films
|
Fayek, S.A. |
|
1999 |
53 |
3-4 |
p. 447-450 4 p. |
artikel |
10 |
Properties of multicomponent surface layers produced on steels by modified plasma nitriding processes
|
Wierzchoń, T. |
|
1999 |
53 |
3-4 |
p. 473-479 7 p. |
artikel |
11 |
Spectroscopic studies in glassy semiconducting Ge x Se1−x
|
Fouad, S.S. |
|
1999 |
53 |
3-4 |
p. 415-419 5 p. |
artikel |
12 |
Statistical reliability of time delay values for nitrogen-filled tube at pressure of 1.3mbar
|
Pejović, M.M. |
|
1999 |
53 |
3-4 |
p. 435-440 6 p. |
artikel |
13 |
Temperature and light soaking dependence of the dc electrical conductivity of binary amorphous Sb–Se Films
|
Fadel, M. |
|
1999 |
53 |
3-4 |
p. 367-372 6 p. |
artikel |
14 |
Temperature effects on the depth profiling of alloys
|
Galdikas, A. |
|
1999 |
53 |
3-4 |
p. 381-388 8 p. |
artikel |
15 |
The Avrami–Johnson–Mehl model and irradiation induced phase changes in silicon
|
Carter, G. |
|
1999 |
53 |
3-4 |
p. 389-397 9 p. |
artikel |
16 |
The effects of vapour incidence on the microstructrure and related properties of condensed GeS2 thin films
|
Starbova, K. |
|
1999 |
53 |
3-4 |
p. 441-445 5 p. |
artikel |
17 |
The helicoid multi-groove frictional pump as a direct compressor in the atmosphere under re-examination of the coefficient of the internal viscosity
|
Valamontes, S.E. |
|
1999 |
53 |
3-4 |
p. 421-425 5 p. |
artikel |
18 |
The kinetics of thin film island growth at initial stages
|
Urbonavičius, E. |
|
1999 |
53 |
3-4 |
p. 377-380 4 p. |
artikel |
19 |
Vacuum pressure thermal thin-film sensor
|
Berlicki, T.M. |
|
1999 |
53 |
3-4 |
p. 373-376 4 p. |
artikel |