| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Absorption tail of polycrystalline semiconductor films
|
Maity, AB
|
|
1995
|
46 |
3 |
p. 319-322
4 p.
|
artikel
|
| 2 |
A reliable compact ultra-high vacuum scanning tunneling microscope
|
Lyubinetsky, IV
|
|
1995
|
46 |
3 |
p. 219-222
4 p.
|
artikel
|
| 3 |
Computer simulation of film thickness distribution in symmetrical magnet magnetron sputtering
|
Fan, Qi-hua
|
|
1995
|
46 |
3 |
p. 229-232
4 p.
|
artikel
|
| 4 |
CVV Auger line shapes in FeS2
|
Raikar, Ganesh N
|
|
1995
|
46 |
3 |
p. 211-217
7 p.
|
artikel
|
| 5 |
Deposition and properties of titanium nitride films produced by dc reactive magnetron sputtering
|
Meng, Li-Jian
|
|
1995
|
46 |
3 |
p. 233-239
7 p.
|
artikel
|
| 6 |
Determination of optical constants and band gaps of bilayered semiconductor films
|
Bhattacharyya, D
|
|
1995
|
46 |
3 |
p. 309-313
5 p.
|
artikel
|
| 7 |
Development of pressure-time dependence methods for the calibration of vacuum gauges: a review
|
Kuz'min, VV
|
|
1995
|
46 |
3 |
p. 251-264
14 p.
|
artikel
|
| 8 |
Effect of sample temperature on the irradiation effects of energetic particles in the YBCO system
|
Das, SK
|
|
1995
|
46 |
3 |
p. 227-228
2 p.
|
artikel
|
| 9 |
Electrical properties of thin gold films on (3-Mercaptopropyl)trimethoxysilane (MPS) treated glass substrates
|
Newton, MI
|
|
1995
|
46 |
3 |
p. 315-318
4 p.
|
artikel
|
| 10 |
Electron temperature measurements in uhv systems by spectroscopic and Langmuir probe techniques
|
Desai, TM
|
|
1995
|
46 |
3 |
p. 223-226
4 p.
|
artikel
|
| 11 |
Hydrogen profiling and the stoichiometry of an a-SiN x : H film
|
Avasthi, DK
|
|
1995
|
46 |
3 |
p. 265-267
3 p.
|
artikel
|
| 12 |
Investigation of multilayered Ge/Si structures with varying thicknesses
|
Kiselev, NA
|
|
1995
|
46 |
3 |
p. 269-276
8 p.
|
artikel
|
| 13 |
On the ion energy transfer to the substrate during titanium deposition in a hollow cathode arc discharge
|
Kersten, H
|
|
1995
|
46 |
3 |
p. 305-308
4 p.
|
artikel
|
| 14 |
Simulation of isotope effects in the sputtering of 63Cu–65Cu
|
Zheng, Li-Ping
|
|
1995
|
46 |
3 |
p. 277-280
4 p.
|
artikel
|
| 15 |
Small area X-ray photoelectron spectroscopy (SAXPS) analysis of microscopic contamination in semiconductor materials and processes
|
Marks, MR
|
|
1995
|
46 |
3 |
p. 281-286
6 p.
|
artikel
|
| 16 |
Some recent advances in silicon microtechnology and their dependence on processing technique
|
Hurley, RE
|
|
1995
|
46 |
3 |
p. 287-293
7 p.
|
artikel
|
| 17 |
Studies of atom beams produced by a saddle field source used for depositing diamond-like carbon films on glass
|
Voevodin, AA
|
|
1995
|
46 |
3 |
p. 299-303
5 p.
|
artikel
|
| 18 |
Study on depth profiles of hydrogen in the surface region of metal by ERDA
|
Changgeng, Liao
|
|
1995
|
46 |
3 |
p. 295-297
3 p.
|
artikel
|
| 19 |
Surface morphology of films having columnar grains
|
Bhattacharyya, D
|
|
1995
|
46 |
3 |
p. 241-245
5 p.
|
artikel
|
| 20 |
The influence of surface topographic features on angular distribution of sputtered atoms
|
Zhenxia, Wang
|
|
1995
|
46 |
3 |
p. 247-250
4 p.
|
artikel
|
| 21 |
Vacuum diary
|
|
|
1995
|
46 |
3 |
p. i-
1 p.
|
artikel
|
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