| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A brief description of the laser-induced surface breakdown of refractory metals—III. Generation of basins of local surface dynamics by material related inhomogeneities
|
Lugomer, S
|
|
1995
|
46 |
12 |
p. 1423-1431
9 p.
|
artikel
|
| 2 |
A method for determining the fast neutral portion of ion beams
|
Nedialkov, M
|
|
1995
|
46 |
12 |
p. 1455-1457
3 p.
|
artikel
|
| 3 |
An improved throughput method for the measurement of outgassing rates of materials
|
Yang, Y
|
|
1995
|
46 |
12 |
p. 1371-1376
6 p.
|
artikel
|
| 4 |
An MIS diode employing a-C:H film as the insulator
|
Alves, Marco AR
|
|
1995
|
46 |
12 |
p. 1461-1463
3 p.
|
artikel
|
| 5 |
Applicability of the rf-only mode in a quadrupole mass spectrometer for direct analysis of keV ions
|
Hiroki, S
|
|
1995
|
46 |
12 |
p. 1445-1447
3 p.
|
artikel
|
| 6 |
Author index
|
|
|
1995
|
46 |
12 |
p. VII-XXVI
nvt p.
|
artikel
|
| 7 |
Bulk micromachining of Si by Lithography and Reactive Ion Etching (LIRIE)
|
Rangelow, IW
|
|
1995
|
46 |
12 |
p. 1361-1369
9 p.
|
artikel
|
| 8 |
Deposition and properties of hydrophilic films prepared by plasma polymerization of Ar/n-hexane/H2O
|
Biederman, H
|
|
1995
|
46 |
12 |
p. 1413-1418
6 p.
|
artikel
|
| 9 |
Effect of modified evaporation source on the structural characteristics of CdS films
|
Ashour, A
|
|
1995
|
46 |
12 |
p. 1419-1421
3 p.
|
artikel
|
| 10 |
Inelastic electron tunneling spectroscopy of Sn oxide tunnel barriers
|
Hatta, E
|
|
1995
|
46 |
12 |
p. 1377-1380
4 p.
|
artikel
|
| 11 |
Influence of intrinsic electric fields on passive film chemistry and structure
|
Cocke, DL
|
|
1995
|
46 |
12 |
p. 1397-1399
3 p.
|
artikel
|
| 12 |
Macrocrystalline silicon thin films prepared by RF reactive magnetron sputter deposition
|
Cerqueira, MF
|
|
1995
|
46 |
12 |
p. 1385-1390
6 p.
|
artikel
|
| 13 |
Methods of controllable internal rupture in solids and liquids for obtaining atomically-clean surfaces and investigating their adhesion
|
Maniks, J
|
|
1995
|
46 |
12 |
p. 1439-1444
6 p.
|
artikel
|
| 14 |
Nitrogen implantation of Ti and Ti+AI films deposited on tool steel
|
Huang, C-T
|
|
1995
|
46 |
12 |
p. 1465-1472
8 p.
|
artikel
|
| 15 |
Phase formation and microstructure of Nb1 − x Al xN alloy films grown on MgO (001) by reactive sputtering: a new ternary phase
|
Selinder, TI
|
|
1995
|
46 |
12 |
p. 1401-1406
6 p.
|
artikel
|
| 16 |
Plasma polymerization processes: Plasma technology, volume 3
|
Steckelmacher, Walter
|
|
1995
|
46 |
12 |
p. 1474-
1 p.
|
artikel
|
| 17 |
Processes on the target, discharge and NbN film behaviour in reactive dc magnetron deposition
|
Brčka, J
|
|
1995
|
46 |
12 |
p. 1407-1412
6 p.
|
artikel
|
| 18 |
Properties of PdCu(110) single crystal alloy surfaces: reversible changes of domain sizes
|
Loboda-Cackovic, J
|
|
1995
|
46 |
12 |
p. 1449-1453
5 p.
|
artikel
|
| 19 |
Surface phases on silicon: Preparation, structures and properties
|
Steckelmacher, W.
|
|
1995
|
46 |
12 |
p. 1473-
1 p.
|
artikel
|
| 20 |
Surface science techniques
|
Steckelmacher, Walter
|
|
1995
|
46 |
12 |
p. 1473-1474
2 p.
|
artikel
|
| 21 |
Surface smoothness of YBCO thin-films deposited by RF-sputtering
|
Inoue, N
|
|
1995
|
46 |
12 |
p. 1381-1384
4 p.
|
artikel
|
| 22 |
Switching effects in Se90 − x Sb x Bi10 thin films
|
Hegab, NA
|
|
1995
|
46 |
12 |
p. 1351-1355
5 p.
|
artikel
|
| 23 |
Technological versions for diffusive metallizing by the PVDM element scheme method
|
Shishkov, RI
|
|
1995
|
46 |
12 |
p. 1357-1360
4 p.
|
artikel
|
| 24 |
The freon flooding technique in SIMS analysis
|
Sielanko, J
|
|
1995
|
46 |
12 |
p. 1459-1460
2 p.
|
artikel
|
| 25 |
Titanium nitride deposited by high rate rf hollow cathode plasma jet reactive process
|
Baránkova, H
|
|
1995
|
46 |
12 |
p. 1433-1438
6 p.
|
artikel
|
| 26 |
Vaccum diary
|
|
|
1995
|
46 |
12 |
p. i-iii
nvt p.
|
artikel
|
| 27 |
X-ray photoelectron spectroscopic studies of kaolinite and montmorillonite
|
Barr, TL
|
|
1995
|
46 |
12 |
p. 1391-1395
5 p.
|
artikel
|
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