| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Anodic plasma nitriding with a molybdenum cathode
|
Benda, M
|
|
1995
|
46 |
1 |
p. 43-47
5 p.
|
artikel
|
| 2 |
Bombardment-induced light emission spectroscopy of GaAs
|
Ghose, Debabrata
|
|
1995
|
46 |
1 |
p. 13-16
4 p.
|
artikel
|
| 3 |
Coatings tribology: Properties, techniques and applications in surface engineering
|
Steckelmacher, W
|
|
1995
|
46 |
1 |
p. 88-
1 p.
|
artikel
|
| 4 |
Comparison of the sensitivities of ionization gauges to hydrogen and deuterium
|
Jousten, K
|
|
1995
|
46 |
1 |
p. 9-12
4 p.
|
artikel
|
| 5 |
Correlations between mean sputter depth and ion fluence during sputtering of binary component materials
|
Zheng, Li-Ping
|
|
1995
|
46 |
1 |
p. 49-51
3 p.
|
artikel
|
| 6 |
Determination of effective mass of electrons in ternary compound semiconductors
|
Bhattacharyya, D
|
|
1995
|
46 |
1 |
p. 1-3
3 p.
|
artikel
|
| 7 |
Editorial Board
|
|
|
1995
|
46 |
1 |
p. IFC-
1 p.
|
artikel
|
| 8 |
Exact determination of the real substrate temperature and film thickness in vacuum epitaxial growth systems by visible laser interferometry
|
Sitter, H
|
|
1995
|
46 |
1 |
p. 69-76
8 p.
|
artikel
|
| 9 |
Handbook of surface metrology
|
Steckelmacher, W
|
|
1995
|
46 |
1 |
p. 87-
1 p.
|
artikel
|
| 10 |
Investigation of the effects of pretreatment on the interaction between a GaAs(100) surface and an oxygen (ECR) plasma
|
Mikhailov, GM
|
|
1995
|
46 |
1 |
p. 65-68
4 p.
|
artikel
|
| 11 |
Ion kinetic aspects of plasma chemical deposition of PMMA (Polymethylmethacrylate) films
|
Zeuner, Michael
|
|
1995
|
46 |
1 |
p. 27-31
5 p.
|
artikel
|
| 12 |
Laser heating of a two-layer system with temperature dependent front surface absorptance
|
El-Adawi, MK
|
|
1995
|
46 |
1 |
p. 37-42
6 p.
|
artikel
|
| 13 |
Low temperature chemical vapour deposition of diamond on tungsten carbides using CF4 gas doping for machine tool applications
|
Trava-Airoldi, VJ
|
|
1995
|
46 |
1 |
p. 5-8
4 p.
|
artikel
|
| 14 |
Physics of thin films
|
Steckelmacher, W
|
|
1995
|
46 |
1 |
p. 86-
1 p.
|
artikel
|
| 15 |
Physics of thin films
|
Steckelmacher, W
|
|
1995
|
46 |
1 |
p. 85-86
2 p.
|
artikel
|
| 16 |
Plasma physics: Basic theory with fusion applications
|
Steckelmacher, W
|
|
1995
|
46 |
1 |
p. 86-
1 p.
|
artikel
|
| 17 |
Rf plasma properties of flat electrodes with multi-input terminals
|
Hirakuri, KK
|
|
1995
|
46 |
1 |
p. 57-60
4 p.
|
artikel
|
| 18 |
Solid helium three
|
Steckelmacher, W
|
|
1995
|
46 |
1 |
p. 87-
1 p.
|
artikel
|
| 19 |
Structure and composition related properties of titania thin films
|
Krishna, M Ghanashyam
|
|
1995
|
46 |
1 |
p. 33-36
4 p.
|
artikel
|
| 20 |
Studies of the grain boundary effect in electrodeposited cadmium telluride films from optical measurements
|
Dutta, J
|
|
1995
|
46 |
1 |
p. 17-22
6 p.
|
artikel
|
| 21 |
Surface roughening resulting from ion irradiation of multilayered materials
|
Pranevicius, L
|
|
1995
|
46 |
1 |
p. 77-84
8 p.
|
artikel
|
| 22 |
The analysis of the surface structure of Al-films anodically oxidized in an oxygen plasma
|
Sun, Da-Ming
|
|
1995
|
46 |
1 |
p. 61-64
4 p.
|
artikel
|
| 23 |
The influence of Ar+ and Xe+ ion beam incidence angle on the depth resolution in AES
|
Liday, J
|
|
1995
|
46 |
1 |
p. 53-55
3 p.
|
artikel
|
| 24 |
The materials science of thin films
|
Steckelmacher, W
|
|
1995
|
46 |
1 |
p. 85-
1 p.
|
artikel
|
| 25 |
The measurement of the intensity profile of an electron gun using modulation techniques
|
Crapper, MD
|
|
1995
|
46 |
1 |
p. 23-25
3 p.
|
artikel
|
| 26 |
VACUUM Diary
|
|
|
1995
|
46 |
1 |
p. i-
1 p.
|
artikel
|
| 27 |
Vacuum science and technology: Pioneers of the 20th century
|
Steckelmacher, W
|
|
1995
|
46 |
1 |
p. 86-87
2 p.
|
artikel
|
| 28 |
VLSI Fabrication principles: Silicon and gallium arsenide
|
Steckelmacher, W
|
|
1995
|
46 |
1 |
p. 87-88
2 p.
|
artikel
|
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