| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Aspects of the processing of semiconductor optoelectronic devices
|
Clements, S.J.
|
|
1990
|
40 |
4 |
p. 363-367
5 p.
|
artikel
|
| 2 |
Control of defects in the heteroepitaxial growth of GaAs on silicon
|
Bradley, RR
|
|
1990
|
40 |
4 |
p. 339-346
8 p.
|
artikel
|
| 3 |
Depth profiling techniques for the elemental analysis of semiconductor layers
|
Sykes, DE
|
|
1990
|
40 |
4 |
p. 347-349
3 p.
|
artikel
|
| 4 |
Effect of nitrogen ion bombardment at copper-alumina interface
|
Bhattacharyya, Varsha P.
|
|
1990
|
40 |
4 |
p. 371-376
6 p.
|
artikel
|
| 5 |
Energy distributions of cathode fall ions in the light of Boltzmann equation
|
Wroński, Z.
|
|
1990
|
40 |
4 |
p. 387-394
8 p.
|
artikel
|
| 6 |
Etch diagnostics for new III–V and other semiconductors
|
Field, D.
|
|
1990
|
40 |
4 |
p. 357-361
5 p.
|
artikel
|
| 7 |
Gallium arsenide processing—state of the manufacturing art
|
Webb, Alan
|
|
1990
|
40 |
4 |
p. 337-
1 p.
|
artikel
|
| 8 |
Ion-assisted processing of GaAs for optical devices
|
Darbyshire, DA
|
|
1990
|
40 |
4 |
p. 351-355
5 p.
|
artikel
|
| 9 |
Mechanical and optical properties of oxide thin films deposited by pulsed laser reactive evaporation
|
Shi, L.
|
|
1990
|
40 |
4 |
p. 399-405
7 p.
|
artikel
|
| 10 |
Modern vacuum practice
|
Steckelmacher, W
|
|
1990
|
40 |
4 |
p. 421-
1 p.
|
artikel
|
| 11 |
New patents
|
|
|
1990
|
40 |
4 |
p. i-viii
nvt p.
|
artikel
|
| 12 |
Period pressure instabilities in an oil diffusion pumped system
|
Flexman, J.
|
|
1990
|
40 |
4 |
p. 381-385
5 p.
|
artikel
|
| 13 |
PLISD: a new high-vacuum sputtering technique for thin film deposition
|
Shi, L.
|
|
1990
|
40 |
4 |
p. 395-397
3 p.
|
artikel
|
| 14 |
Ranges, straggling and carrier concentration profiles of 0.5–6.0 MeV phosphorus in silicon
|
Yuguang, Wu
|
|
1990
|
40 |
4 |
p. 407-410
4 p.
|
artikel
|
| 15 |
Symposium on the Auger effect, Paris, 30–31 March 1989
|
Steckelmacher, W
|
|
1990
|
40 |
4 |
p. 415-419
5 p.
|
artikel
|
| 16 |
Temperature induced structural rearrangements of Ag/a-C:H composite films and their dc electrical conduction
|
Biederman, H.
|
|
1990
|
40 |
4 |
p. 377-380
4 p.
|
artikel
|
| 17 |
The effects of sample distance on Al-film structure when using magnetron sputtering ion-plating
|
Wan, Lijun
|
|
1990
|
40 |
4 |
p. 411-414
4 p.
|
artikel
|
| 18 |
Vacuum mechatronics
|
Steckelmacher, W
|
|
1990
|
40 |
4 |
p. 421-
1 p.
|
artikel
|
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