| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Abrasive wear resistance of ion-deposited hard-carbon films as a function of deposition energy
|
|
|
1989
|
39 |
5 |
p. 513-
1 p.
|
artikel
|
| 2 |
A comparison between Sb and As implantation for the formation of highly conducting shallow silicon layers
|
|
|
1989
|
39 |
5 |
p. 506-
1 p.
|
artikel
|
| 3 |
A comparison of tungsten film deposition techniques for very large scale integration technology
|
|
|
1989
|
39 |
5 |
p. 494-495
2 p.
|
artikel
|
| 4 |
A correlation between the enthalpy of mixing and the internal strain energy in the III–V alloy semiconductor system
|
|
|
1989
|
39 |
5 |
p. 515-
1 p.
|
artikel
|
| 5 |
Adhesion and structure of TiN arc coatings
|
|
|
1989
|
39 |
5 |
p. 499-
1 p.
|
artikel
|
| 6 |
Adhesion measurements of chemically vapor deposited and physically vapor deposited hard coatings on WCCo substrates
|
|
|
1989
|
39 |
5 |
p. 500-
1 p.
|
artikel
|
| 7 |
Adhesion of physically vapor-deposited titanium coatings to beryllium substrates
|
|
|
1989
|
39 |
5 |
p. 501-
1 p.
|
artikel
|
| 8 |
Adhesion testing by the scratch test method: the influence of intrinsic and extrinsic parameters on the critical load
|
|
|
1989
|
39 |
5 |
p. 501-
1 p.
|
artikel
|
| 9 |
Adsorption and reaction of oxygen on Cu(110) in O2/H2 and O2/CO gas mixtures
|
|
|
1989
|
39 |
5 |
p. 491-
1 p.
|
artikel
|
| 10 |
Advanced layer material constitution
|
|
|
1989
|
39 |
5 |
p. 516-
1 p.
|
artikel
|
| 11 |
A flowmeter to determine complex volumes and small volumes of glass tubes used in vacuum gauge calibrations
|
|
|
1989
|
39 |
5 |
p. 490-
1 p.
|
artikel
|
| 12 |
A lidar system for measuring atmospheric pressure and temperature profiles
|
|
|
1989
|
39 |
5 |
p. 490-
1 p.
|
artikel
|
| 13 |
A measurement of the distribution of argon in sputter-deposited very large scale integration metallization
|
|
|
1989
|
39 |
5 |
p. 494-
1 p.
|
artikel
|
| 14 |
American vacuum society recommended practices for pumping hazardous gases
|
|
|
1989
|
39 |
5 |
p. 491-
1 p.
|
artikel
|
| 15 |
A model for damage release in ion-implanted silicon
|
|
|
1989
|
39 |
5 |
p. 506-507
2 p.
|
artikel
|
| 16 |
Analysis of molecular-beam epitaxially grown ZnSe on GaAs and GaP by means of ion channeling
|
|
|
1989
|
39 |
5 |
p. 513-
1 p.
|
artikel
|
| 17 |
Analytical relationship for the oxidation of silicon in dry oxygen in the thin-film regime
|
|
|
1989
|
39 |
5 |
p. 491-
1 p.
|
artikel
|
| 18 |
An efficient algorithm for the simulation of hyperthermal energy ion scattering
|
|
|
1989
|
39 |
5 |
p. 525-
1 p.
|
artikel
|
| 19 |
An electron spectroscopy study of the growth and thermally activated diffusion of nickel thin films on Al(111) and Al2O3/Al(111)
|
|
|
1989
|
39 |
5 |
p. 529-
1 p.
|
artikel
|
| 20 |
A new hybrid molecular pump with large throughput
|
|
|
1989
|
39 |
5 |
p. 489-
1 p.
|
artikel
|
| 21 |
Angular distributions of sputtered atoms from ion-bombarded surfaces
|
|
|
1989
|
39 |
5 |
p. 497-
1 p.
|
artikel
|
| 22 |
Annealing of Sb+-ion-implanted Si
|
|
|
1989
|
39 |
5 |
p. 506-
1 p.
|
artikel
|
| 23 |
Anomalous deposition rate dependence of hydrogenated amorphous silicon on substrate temperature
|
|
|
1989
|
39 |
5 |
p. 498-
1 p.
|
artikel
|
| 24 |
An optimized in situ argon sputter cleaning process for device quality low-temperature (T ⩽ 800°C) epitaxial silicon: bipolar transistor and pn junction characterization
|
|
|
1989
|
39 |
5 |
p. 496-
1 p.
|
artikel
|
| 25 |
A novel mass-spectrometric sampling technique for lifetime studies of gas lasers
|
|
|
1989
|
39 |
5 |
p. 524-
1 p.
|
artikel
|
| 26 |
An RIE process for GaAs using Cl2
|
|
|
1989
|
39 |
5 |
p. 519-
1 p.
|
artikel
|
| 27 |
Antimony passivation of molecular-beam epitaxially grown GaAs surfaces
|
|
|
1989
|
39 |
5 |
p. 512-
1 p.
|
artikel
|
| 28 |
A quasi-direct-current sputtering technique for the deposition of dielectrics at enhanced rates
|
|
|
1989
|
39 |
5 |
p. 497-498
2 p.
|
artikel
|
| 29 |
A Schottky barrier study of beam incidence in argon ion beam etching
|
|
|
1989
|
39 |
5 |
p. 520-
1 p.
|
artikel
|
| 30 |
A simulation of keV electron scatterings in a charged-up specimen
|
|
|
1989
|
39 |
5 |
p. 525-
1 p.
|
artikel
|
| 31 |
A statistical study of the combined effects of substrate temperature, bias, annealing and a Cr3Si2 undercoating on the tribological properties r.f. sputtered MoS2 coatings
|
|
|
1989
|
39 |
5 |
p. 494-
1 p.
|
artikel
|
| 32 |
A study of crack initiation and propagation in Ni Cr thermally sprayed coatings using acoustic emission techniques
|
|
|
1989
|
39 |
5 |
p. 499-500
2 p.
|
artikel
|
| 33 |
A study of the leakage mechanisms of silicided n
+/p junctions
|
|
|
1989
|
39 |
5 |
p. 518-
1 p.
|
artikel
|
| 34 |
A study of the liquid Pr-ion source
|
|
|
1989
|
39 |
5 |
p. 505-
1 p.
|
artikel
|
| 35 |
A study of the oxidation of selected metal silicides
|
|
|
1989
|
39 |
5 |
p. 518-
1 p.
|
artikel
|
| 36 |
Asymmetric double Langmuir probe: small signal application
|
|
|
1989
|
39 |
5 |
p. 522-
1 p.
|
artikel
|
| 37 |
A theory of interaction between fast ions and solids
|
|
|
1989
|
39 |
5 |
p. 523-
1 p.
|
artikel
|
| 38 |
Atomic force microscopy and scanning tunneling microscopy with a combination atomic force microscope/scanning tunneling microscope
|
|
|
1989
|
39 |
5 |
p. 526-
1 p.
|
artikel
|
| 39 |
Auger electron spectroscopy and Rutherford backscattering spectroscopy studies of TiN and TiC coatings prepared by the activated reactive evaporation process
|
|
|
1989
|
39 |
5 |
p. 525-526
2 p.
|
artikel
|
| 40 |
Automatic measurement of high pressures
|
|
|
1989
|
39 |
5 |
p. 490-
1 p.
|
artikel
|
| 41 |
Background reduction for heavy element accelerator mass spectrometry
|
|
|
1989
|
39 |
5 |
p. 524-
1 p.
|
artikel
|
| 42 |
Basic mechanisms for the lattice-site occupation of metallic elements implanted into aluminium
|
|
|
1989
|
39 |
5 |
p. 523-
1 p.
|
artikel
|
| 43 |
Behaviour of implanted helium in boron carbide in the temperature range 750 to 1720°C
|
|
|
1989
|
39 |
5 |
p. 509-510
2 p.
|
artikel
|
| 44 |
Behaviour of the oxide film in MOS devices
|
|
|
1989
|
39 |
5 |
p. 518-
1 p.
|
artikel
|
| 45 |
Build-up and annealing of damage produced by low-energy argon ions at Si(111) surface
|
|
|
1989
|
39 |
5 |
p. 507-
1 p.
|
artikel
|
| 46 |
Calculation of desorption energy distribution applied to temperature programmed H2O desorption from silicate glass surface
|
|
|
1989
|
39 |
5 |
p. 491-
1 p.
|
artikel
|
| 47 |
Calibration of a Fenn-type nozzle beam source
|
|
|
1989
|
39 |
5 |
p. 506-
1 p.
|
artikel
|
| 48 |
Cathodic arc plasma deposition of TiC and TiC
x
N1−x
|
|
|
1989
|
39 |
5 |
p. 504-
1 p.
|
artikel
|
| 49 |
Ceramic coatings produced by means of a gas tunnel-type plasma jet
|
|
|
1989
|
39 |
5 |
p. 504-
1 p.
|
artikel
|
| 50 |
Channel electron multiplier compatibility with Viton and Apiezon-L vacuum grease
|
|
|
1989
|
39 |
5 |
p. 491-492
2 p.
|
artikel
|
| 51 |
Characteristics of Cl-doped ZnSe layers grown by molecular-beam epitaxy
|
|
|
1989
|
39 |
5 |
p. 513-
1 p.
|
artikel
|
| 52 |
Characterization of a commercial electron impact fast atom beam source
|
Xu, NS
|
|
1989
|
39 |
5 |
p. 475-484
10 p.
|
artikel
|
| 53 |
Characterization of epitaxial films by grazing-incidence X-ray diffraction
|
|
|
1989
|
39 |
5 |
p. 529-
1 p.
|
artikel
|
| 54 |
Characterization of ion beam etching induced defects in GaAs
|
|
|
1989
|
39 |
5 |
p. 519-
1 p.
|
artikel
|
| 55 |
Characterization of microcrystallinity in hydrogenated silicon thin films
|
|
|
1989
|
39 |
5 |
p. 529-
1 p.
|
artikel
|
| 56 |
Characterization of MoSe2 thin films
|
|
|
1989
|
39 |
5 |
p. 497-
1 p.
|
artikel
|
| 57 |
Characterization of phosphate crystal nucleation and growth on coldrolled steel
|
|
|
1989
|
39 |
5 |
p. 493-
1 p.
|
artikel
|
| 58 |
Characterization of plasma-deposited silicon nitride coating used for integrated circuit encapsulation
|
|
|
1989
|
39 |
5 |
p. 504-
1 p.
|
artikel
|
| 59 |
Characterization of reactive broad beam radio-frequency ion source
|
|
|
1989
|
39 |
5 |
p. 504-
1 p.
|
artikel
|
| 60 |
Characterization of r.f. sputtered zirconia coatings
|
|
|
1989
|
39 |
5 |
p. 495-
1 p.
|
artikel
|
| 61 |
Chemical cleaning of metal surfaces in vacuum systems by exposure to reactive gases
|
|
|
1989
|
39 |
5 |
p. 491-
1 p.
|
artikel
|
| 62 |
Chemically bonded diamondlike films from ion-beam deposition
|
|
|
1989
|
39 |
5 |
p. 512-
1 p.
|
artikel
|
| 63 |
Chemical modifications in irradiated polymers
|
|
|
1989
|
39 |
5 |
p. 509-
1 p.
|
artikel
|
| 64 |
Collision-induced absorption in the fundamental band of nitrogen gas
|
|
|
1989
|
39 |
5 |
p. 521-
1 p.
|
artikel
|
| 65 |
Columnar structure of obliquely deposited iron films prepared at low substrate temperatures
|
|
|
1989
|
39 |
5 |
p. 493-
1 p.
|
artikel
|
| 66 |
Comparison of electrical defects in Ge+ and Si+ preamorphized BF2-implanted silicon
|
|
|
1989
|
39 |
5 |
p. 506-
1 p.
|
artikel
|
| 67 |
Composition, microstructure, and properties of crystalline molybdenum silicide thin films produced by annealing of amorphous Mo/Si multilayers
|
|
|
1989
|
39 |
5 |
p. 515-516
2 p.
|
artikel
|
| 68 |
Contamination effects in glow discharge deposition systems
|
|
|
1989
|
39 |
5 |
p. 502-
1 p.
|
artikel
|
| 69 |
Control of ion bombardment energy in the low-temperature deposition of highly transparent and conducting In2O3 and ZnO thin films by activated reactive evaporation
|
|
|
1989
|
39 |
5 |
p. 492-
1 p.
|
artikel
|
| 70 |
Correlation of process and system parameters with structure and properties of physically vapour-deposited hard coatings
|
|
|
1989
|
39 |
5 |
p. 492-
1 p.
|
artikel
|
| 71 |
Cross-sectional transmission electron microscopy chracterization of the interface between plasma-sprayed TiC and Inconel
|
|
|
1989
|
39 |
5 |
p. 527-
1 p.
|
artikel
|
| 72 |
Crystal growth of Ge studied by reflection high-energy electron diffraction and photoemission
|
|
|
1989
|
39 |
5 |
p. 527-
1 p.
|
artikel
|
| 73 |
Crystallization of amorphous silicon during thin-film gold reaction
|
|
|
1989
|
39 |
5 |
p. 515-
1 p.
|
artikel
|
| 74 |
Damage calculations at high ion energy—Part II
|
|
|
1989
|
39 |
5 |
p. 508-
1 p.
|
artikel
|
| 75 |
Dc and rf magnetron sputter deposition of NbN films with simultaneous control of the nitrogen consumption
|
|
|
1989
|
39 |
5 |
p. 499-
1 p.
|
artikel
|
| 76 |
Deceleration ion optical system for sputtering measurements between 50 and 500 eV as function of angle of incidence
|
|
|
1989
|
39 |
5 |
p. 505-
1 p.
|
artikel
|
| 77 |
Dechanneling at an interface of finite width
|
|
|
1989
|
39 |
5 |
p. 523-
1 p.
|
artikel
|
| 78 |
Defining the fractal nature of thin-film top surfaces from microdensitometer analysis of electron micrographs of surface replicas
|
|
|
1989
|
39 |
5 |
p. 528-
1 p.
|
artikel
|
| 79 |
Depletion of carbon in UHMW PE due to 340 keV D+ implantation
|
|
|
1989
|
39 |
5 |
p. 507-
1 p.
|
artikel
|
| 80 |
Deposition and characterization of ternary nitrides
|
|
|
1989
|
39 |
5 |
p. 503-
1 p.
|
artikel
|
| 81 |
Deposition of Si
x
C1−x
: films by reactive r.f. sputtering
|
|
|
1989
|
39 |
5 |
p. 493-494
2 p.
|
artikel
|
| 82 |
Design and performance of a high repetition rate TEA CO2 laser
|
|
|
1989
|
39 |
5 |
p. 521-
1 p.
|
artikel
|
| 83 |
Detection of atomic surface structure on NbSe2 and NbSe3, at 77 and 4.2 K using scanning tunneling microscopy
|
|
|
1989
|
39 |
5 |
p. 527-528
2 p.
|
artikel
|
| 84 |
Diffusion in InP using evaporated Zn3P2 film with transient annealing
|
|
|
1989
|
39 |
5 |
p. 493-
1 p.
|
artikel
|
| 85 |
Diffusion of B and As from polycrystalline silicon during rapid optical annealing
|
|
|
1989
|
39 |
5 |
p. 512-
1 p.
|
artikel
|
| 86 |
Diffusions of Sb, Ga, Ge, and (As) in TiSi2
|
|
|
1989
|
39 |
5 |
p. 518-
1 p.
|
artikel
|
| 87 |
Dose rate dependence and time constant of the ion-beam-induced crystallization mechanism in silicon
|
|
|
1989
|
39 |
5 |
p. 512-513
2 p.
|
artikel
|
| 88 |
Editorial: Software survey section
|
|
|
1989
|
39 |
5 |
p. i-iv
nvt p.
|
artikel
|
| 89 |
Effect of object potentials on the wake of a flowing plasma
|
|
|
1989
|
39 |
5 |
p. 521-
1 p.
|
artikel
|
| 90 |
Effect of oxygen on fluorine-based remote plasma etching of silicon and silicon dioxide
|
|
|
1989
|
39 |
5 |
p. 519-
1 p.
|
artikel
|
| 91 |
Effect of peak overlap on Auger peak amplitude measurement error in dN/dE mode
|
Godowski, P
|
|
1989
|
39 |
5 |
p. 439-442
4 p.
|
artikel
|
| 92 |
Effects of different glow discharge conditions on deposition rates of copper in a dc magnetron sputtering system
|
Rizk, A
|
|
1989
|
39 |
5 |
p. 471-473
3 p.
|
artikel
|
| 93 |
Effects of oxygen partial pressure on the properties of reactively evaporated thin films of indium oxide
|
|
|
1989
|
39 |
5 |
p. 492-
1 p.
|
artikel
|
| 94 |
Effects of process parameters on the ionization in triode ion plating
|
|
|
1989
|
39 |
5 |
p. 503-
1 p.
|
artikel
|
| 95 |
Effects of substrate bias on the resistivity and microstructure of molybdenum and molybdenum silicide films
|
|
|
1989
|
39 |
5 |
p. 495-
1 p.
|
artikel
|
| 96 |
Elastic scattering and charge exchange in He+ ion scattering from alkali metal overlayers
|
|
|
1989
|
39 |
5 |
p. 525-
1 p.
|
artikel
|
| 97 |
Electrical properties of Be+ ion-implanted Al
x
Ga1−x
As p-n junctions
|
|
|
1989
|
39 |
5 |
p. 508-509
2 p.
|
artikel
|
| 98 |
Electrochromic properties of sputtered nickel-oxide films
|
|
|
1989
|
39 |
5 |
p. 498-
1 p.
|
artikel
|
| 99 |
Electron beam direct writing technology: system and process
|
|
|
1989
|
39 |
5 |
p. 504-
1 p.
|
artikel
|
| 100 |
Electron beam time-of-flight plasma potential diagnostic
|
|
|
1989
|
39 |
5 |
p. 522-
1 p.
|
artikel
|
| 101 |
Electronic device for the analysis of electron diffraction patterns
|
|
|
1989
|
39 |
5 |
p. 526-
1 p.
|
artikel
|
| 102 |
Electron microscopy of electron damage in tantalum carbide
|
|
|
1989
|
39 |
5 |
p. 526-
1 p.
|
artikel
|
| 103 |
Electron spin resonance investigation of ion beam modified amorphous hydrogenated (diamondlike) carbon
|
|
|
1989
|
39 |
5 |
p. 525-
1 p.
|
artikel
|
| 104 |
Electron stimulated desorption from GaAs(100) surface
|
|
|
1989
|
39 |
5 |
p. 529-
1 p.
|
artikel
|
| 105 |
Electron stimulated desorption of gases at technological surfaces of aluminium
|
Ding, MQ
|
|
1989
|
39 |
5 |
p. 463-469
7 p.
|
artikel
|
| 106 |
Energy flux onto an RF magnetron surface
|
|
|
1989
|
39 |
5 |
p. 497-
1 p.
|
artikel
|
| 107 |
energy-loss image formation in scanning transmission ion microscopy
|
|
|
1989
|
39 |
5 |
p. 528-
1 p.
|
artikel
|
| 108 |
Enhanced elimination of implantation damage upon exceeding the solid solubility
|
|
|
1989
|
39 |
5 |
p. 506-
1 p.
|
artikel
|
| 109 |
Epitaxial growth of LiNbO3LiTaO3 thin films on Al2O3
|
|
|
1989
|
39 |
5 |
p. 512-
1 p.
|
artikel
|
| 110 |
Etching of tungsten with XeF2: an x-ray photoelectron spectroscopy study
|
|
|
1989
|
39 |
5 |
p. 520-
1 p.
|
artikel
|
| 111 |
Evaluation of adhesion strength of thin hard coatings
|
|
|
1989
|
39 |
5 |
p. 500-
1 p.
|
artikel
|
| 112 |
Evaluation of crystalline quality of zirconium dioxide films on silicon by means of ion-beam channeling
|
|
|
1989
|
39 |
5 |
p. 523-
1 p.
|
artikel
|
| 113 |
Experimental comparison of micro-PIXE with other methods utilized for biomineralization studies
|
|
|
1989
|
39 |
5 |
p. 529-
1 p.
|
artikel
|
| 114 |
Fabrication and structure of Mo/Ta superlattices
|
|
|
1989
|
39 |
5 |
p. 498-
1 p.
|
artikel
|
| 115 |
Fabrication of ultrathin unsupported foils
|
|
|
1989
|
39 |
5 |
p. 492-
1 p.
|
artikel
|
| 116 |
Failure mode analysis of coated tools
|
|
|
1989
|
39 |
5 |
p. 500-
1 p.
|
artikel
|
| 117 |
Field microscopy of 180–230 keV Xe+ ion damage in tungsten
|
|
|
1989
|
39 |
5 |
p. 509-
1 p.
|
artikel
|
| 118 |
Films of rare earth oxides formed by electron beam evaporation
|
|
|
1989
|
39 |
5 |
p. 492-
1 p.
|
artikel
|
| 119 |
1/f noise in a quarter-micron GaAs Hall device made by focused ion-beam implantation
|
|
|
1989
|
39 |
5 |
p. 506-
1 p.
|
artikel
|
| 120 |
Focused ion beam technology
|
|
|
1989
|
39 |
5 |
p. 504-
1 p.
|
artikel
|
| 121 |
Focused MeV beam line for microanalysis at Osaka
|
|
|
1989
|
39 |
5 |
p. 505-
1 p.
|
artikel
|
| 122 |
Formation of PtSi in the presence of W and Al
|
|
|
1989
|
39 |
5 |
p. 517-
1 p.
|
artikel
|
| 123 |
Fracture testing of silicon microelements in situ in a scanning electron microscope
|
|
|
1989
|
39 |
5 |
p. 528-
1 p.
|
artikel
|
| 124 |
From diamond-like carbon to diamond coatings
|
|
|
1989
|
39 |
5 |
p. 503-
1 p.
|
artikel
|
| 125 |
Fundamental aspects of the electronic structure, materials properties and lubrication performance of sputtered MoS2 films
|
|
|
1989
|
39 |
5 |
p. 494-
1 p.
|
artikel
|
| 126 |
Further improvements in end point detection using a wide angle ion beam souce
|
|
|
1989
|
39 |
5 |
p. 520-
1 p.
|
artikel
|
| 127 |
GaAs on Si technology
|
|
|
1989
|
39 |
5 |
p. 510-511
2 p.
|
artikel
|
| 128 |
Gallium arsenide on silicon: a review
|
|
|
1989
|
39 |
5 |
p. 510-
1 p.
|
artikel
|
| 129 |
Gases released by surface flashover of insulators
|
|
|
1989
|
39 |
5 |
p. 491-
1 p.
|
artikel
|
| 130 |
Generation of divacancies in silicon irradiated by 2-MeV electrons: depth and dose dependence
|
|
|
1989
|
39 |
5 |
p. 509-
1 p.
|
artikel
|
| 131 |
Glow discharge characteriztics when magnetron sputtering copper in different plasma atmospheres operated at low input power
|
|
|
1989
|
39 |
5 |
p. 497-
1 p.
|
artikel
|
| 132 |
Glow discharge techniques for conditioning high-vacuum systems
|
|
|
1989
|
39 |
5 |
p. 490-
1 p.
|
artikel
|
| 133 |
Growth and characterization of indium telluride thin films
|
|
|
1989
|
39 |
5 |
p. 492-
1 p.
|
artikel
|
| 134 |
Growth and luminescence spectroscopy of a CuCl quantum well structure
|
|
|
1989
|
39 |
5 |
p. 514-
1 p.
|
artikel
|
| 135 |
Growth and modeling of highly doped, thin-layer silicon-modulation-doped superlattices by intermittent solid-phase epitaxy
|
|
|
1989
|
39 |
5 |
p. 513-
1 p.
|
artikel
|
| 136 |
Growth and properties of TiN and TiO
x
N
y
diffusion barriers in silicon on sapphire integrated circuits
|
|
|
1989
|
39 |
5 |
p. 495-
1 p.
|
artikel
|
| 137 |
Growth and structure aluminum films on (001) silicon carbide
|
|
|
1989
|
39 |
5 |
p. 515-
1 p.
|
artikel
|
| 138 |
Growth of GaAs, AlGaAs, and InGaAs on (111) B GaAs by molecular-beam epitaxy
|
|
|
1989
|
39 |
5 |
p. 511-
1 p.
|
artikel
|
| 139 |
Growth of thin-film niobium and niobium oxide layers by molecular-beam epitaxy
|
|
|
1989
|
39 |
5 |
p. 512-
1 p.
|
artikel
|
| 140 |
Hard molybdenum coatings prepared by cathodic magnetron sputtering
|
|
|
1989
|
39 |
5 |
p. 495-
1 p.
|
artikel
|
| 141 |
Heating and confinement of a stellarator plasma—a review of theory and experiments (1980–1985)
|
|
|
1989
|
39 |
5 |
p. 521-
1 p.
|
artikel
|
| 142 |
Helium cryopumping for fusion applications
|
|
|
1989
|
39 |
5 |
p. 489-490
2 p.
|
artikel
|
| 143 |
Helium microprobe analysis of nickel silicide diodes
|
|
|
1989
|
39 |
5 |
p. 517-
1 p.
|
artikel
|
| 144 |
Highly selective etching of Si3N4 over SiO2 employing a downstream type reactor
|
|
|
1989
|
39 |
5 |
p. 518-
1 p.
|
artikel
|
| 145 |
High-selectivity, silicon dioxide dry etching process
|
|
|
1989
|
39 |
5 |
p. 518-
1 p.
|
artikel
|
| 146 |
High temperature microhardness of hard coatings produced by physical and chemical vapor deposition
|
|
|
1989
|
39 |
5 |
p. 499-
1 p.
|
artikel
|
| 147 |
Imaging and characterization of film coating using scanning acoustic microscopy
|
|
|
1989
|
39 |
5 |
p. 527-
1 p.
|
artikel
|
| 148 |
Imaging of tritium implanted into graphite
|
|
|
1989
|
39 |
5 |
p. 521-
1 p.
|
artikel
|
| 149 |
Implant-dose mapping using infrared transmission
|
|
|
1989
|
39 |
5 |
p. 507-
1 p.
|
artikel
|
| 150 |
Implanted boron depth profiles in the AZ111 photoresist
|
|
|
1989
|
39 |
5 |
p. 509-
1 p.
|
artikel
|
| 151 |
Incorporation of argon in titanium silicon multilayer structures during sputter deposition
|
|
|
1989
|
39 |
5 |
p. 496-
1 p.
|
artikel
|
| 152 |
Influence of surface roughness on electron emission and sputtering in charged beam-surface interactions
|
|
|
1989
|
39 |
5 |
p. 498-
1 p.
|
artikel
|
| 153 |
Influence of the pumping speed on the hysteresis effect in the reactive sputtering of thin films
|
|
|
1989
|
39 |
5 |
p. 496-
1 p.
|
artikel
|
| 154 |
Influence of the substrate orientation on Si incorporation in molecular-beam epitaxial GaAs
|
|
|
1989
|
39 |
5 |
p. 512-
1 p.
|
artikel
|
| 155 |
In situ ellipsometry comparison of the nucleation and growth of sputtered and glow-discharge a-Si:H
|
|
|
1989
|
39 |
5 |
p. 496-
1 p.
|
artikel
|
| 156 |
Instrinsic stress and structural properties of mixed composition thin films
|
|
|
1989
|
39 |
5 |
p. 493-
1 p.
|
artikel
|
| 157 |
Interatomic potential in solids and its applications to range calculations
|
|
|
1989
|
39 |
5 |
p. 523-
1 p.
|
artikel
|
| 158 |
Interfacial reactions in bimetallic AgSn thin film couples
|
|
|
1989
|
39 |
5 |
p. 516-
1 p.
|
artikel
|
| 159 |
Interfacial reactions of platinum thin films on (111) and (001) germanium
|
|
|
1989
|
39 |
5 |
p. 517-
1 p.
|
artikel
|
| 160 |
Interpretation of Langmuir, heat-flux, deposition, trapping and gridded energy analyser probe data for impure plasmas
|
|
|
1989
|
39 |
5 |
p. 522-
1 p.
|
artikel
|
| 161 |
Intrinsic stress in AIN prepared by dual-ion-beam sputtering
|
|
|
1989
|
39 |
5 |
p. 501-
1 p.
|
artikel
|
| 162 |
Invariance principles and plasma confinement
|
|
|
1989
|
39 |
5 |
p. 520-
1 p.
|
artikel
|
| 163 |
Investigation of a radial transmission line transformer for high-gradient particle accelerators
|
|
|
1989
|
39 |
5 |
p. 505-
1 p.
|
artikel
|
| 164 |
Investigation of GaAs/(Al,Ga)As multiple quantum wells grown on Ge and Si substrates by molecular-beam epitaxy
|
|
|
1989
|
39 |
5 |
p. 513-
1 p.
|
artikel
|
| 165 |
Investigation of plasma-grown planar alumina films for use in the modeling of bulk alumina
|
|
|
1989
|
39 |
5 |
p. 503-
1 p.
|
artikel
|
| 166 |
Investigation of thin-film Ni/single-crystal SiC interface reaction
|
|
|
1989
|
39 |
5 |
p. 515-
1 p.
|
artikel
|
| 167 |
Ion-assisted deposition of lanthanum fluoride thin films
|
|
|
1989
|
39 |
5 |
p. 502-
1 p.
|
artikel
|
| 168 |
Ion-beam-induced desorption of Ar
n
+ ion clusters
|
|
|
1989
|
39 |
5 |
p. 502-
1 p.
|
artikel
|
| 169 |
Ion beam mixing effects in Ag precipitates embedded in MgO crystals
|
|
|
1989
|
39 |
5 |
p. 514-
1 p.
|
artikel
|
| 170 |
Ion beam mixing of metal-sapphire interfaces
|
|
|
1989
|
39 |
5 |
p. 514-
1 p.
|
artikel
|
| 171 |
Ion bombardment effect on Si homoepitaxial growth from ion molecular beams
|
|
|
1989
|
39 |
5 |
p. 512-
1 p.
|
artikel
|
| 172 |
Ion implantation in glasses and concomitant effects
|
|
|
1989
|
39 |
5 |
p. 507-
1 p.
|
artikel
|
| 173 |
Ionization-drift turbulence in rf magnetron plasmas
|
|
|
1989
|
39 |
5 |
p. 522-
1 p.
|
artikel
|
| 174 |
Ion source for production of metastable He+
(2S
1
2
) ions
|
|
|
1989
|
39 |
5 |
p. 505-
1 p.
|
artikel
|
| 175 |
IR transmittance studies of hydrogen-free and hydrogenated silicon nitride and silicon oxynitride films deposited by reactive sputtering
|
|
|
1989
|
39 |
5 |
p. 494-
1 p.
|
artikel
|
| 176 |
Large grain size CdTe films grown on glass substrates
|
|
|
1989
|
39 |
5 |
p. 529-
1 p.
|
artikel
|
| 177 |
Laser diagnostic techniques for reactive ion etching: plasma understanding to process control
|
|
|
1989
|
39 |
5 |
p. 519-
1 p.
|
artikel
|
| 178 |
Lattice sites of Yb in Si-A planar channeling study
|
|
|
1989
|
39 |
5 |
p. 523-
1 p.
|
artikel
|
| 179 |
Lattice vacancies in TiN and HfN films: a study by positron annihilation
|
|
|
1989
|
39 |
5 |
p. 524-
1 p.
|
artikel
|
| 180 |
Leak detection on the DIII-D tokamak using helium entrainment techniques
|
|
|
1989
|
39 |
5 |
p. 490-
1 p.
|
artikel
|
| 181 |
LEED method to study surface atom vibrations
|
|
|
1989
|
39 |
5 |
p. 525-
1 p.
|
artikel
|
| 182 |
Lithographic properties of amorphous WO3 films exposed to photons, electrons, and hydrogen plasma
|
|
|
1989
|
39 |
5 |
p. 519-
1 p.
|
artikel
|
| 183 |
Low-energy broad area electron beam for etching microelectronic materials
|
|
|
1989
|
39 |
5 |
p. 505-
1 p.
|
artikel
|
| 184 |
Low energy electron diffraction analysis of the Si(111)7x7 structure
|
|
|
1989
|
39 |
5 |
p. 527-
1 p.
|
artikel
|
| 185 |
Low temperature annealing of He+ implanted optical waveguides in LiNbO3
|
|
|
1989
|
39 |
5 |
p. 508-
1 p.
|
artikel
|
| 186 |
Magnetically enhanced reactive ion etching of silicon in bromine plasmas
|
|
|
1989
|
39 |
5 |
p. 519-
1 p.
|
artikel
|
| 187 |
Magnetic deflection analysis of supersonic metastable atom beams
|
|
|
1989
|
39 |
5 |
p. 505-
1 p.
|
artikel
|
| 188 |
Magnetoreflectivity study of excitons in molecular-beam epitaxially grown Zn1−x
Fe
x
Se crystals
|
|
|
1989
|
39 |
5 |
p. 510-
1 p.
|
artikel
|
| 189 |
Mass analyzed secondary ion microscopy
|
|
|
1989
|
39 |
5 |
p. 524-
1 p.
|
artikel
|
| 190 |
Mass-sensitive ion energy analyzer for multispecies plasmas
|
|
|
1989
|
39 |
5 |
p. 522-
1 p.
|
artikel
|
| 191 |
Mass spectometry during molecular-beam epitaxy: an alternative to reflection high-energy electron diffraction
|
|
|
1989
|
39 |
5 |
p. 524-
1 p.
|
artikel
|
| 192 |
Measurement of channeling radiation using a 45 MeV betatron
|
|
|
1989
|
39 |
5 |
p. 523-524
2 p.
|
artikel
|
| 193 |
Measurement of charge-to-mass ratio (Q/m) distribution of an ionized cluster beam by a special type of quadrupole mass analyzer
|
|
|
1989
|
39 |
5 |
p. 490-
1 p.
|
artikel
|
| 194 |
Measurements of hydrogen in metal-oxide-semiconductor structures using nuclear reaction profiling
|
|
|
1989
|
39 |
5 |
p. 524-
1 p.
|
artikel
|
| 195 |
Measurements of vapour stream density with the electron emission method
|
|
|
1989
|
39 |
5 |
p. 493-
1 p.
|
artikel
|
| 196 |
Mechanical property and structure relationships in hard coatings for cutting tools
|
|
|
1989
|
39 |
5 |
p. 502-
1 p.
|
artikel
|
| 197 |
Metastable phases and thermodynamic equilibrium
|
|
|
1989
|
39 |
5 |
p. 516-517
2 p.
|
artikel
|
| 198 |
Microstructural change of Al on H implantation
|
|
|
1989
|
39 |
5 |
p. 510-
1 p.
|
artikel
|
| 199 |
Microstructure and physical properties of polycrystalline metastable Ti0.5Al0.5N alloys grown by d.c. magnetron sputter deposition
|
|
|
1989
|
39 |
5 |
p. 494-
1 p.
|
artikel
|
| 200 |
Microstructure of Fe implanted yttria stabilized zirconia studied by Mössbauer spectroscopy and TEM
|
|
|
1989
|
39 |
5 |
p. 528-
1 p.
|
artikel
|
| 201 |
Molecular-beam and deposition of high-T
c superconductors
|
|
|
1989
|
39 |
5 |
p. 511-
1 p.
|
artikel
|
| 202 |
Molecular-beam epitaxial growth and exciton lifetime studies of lattice-matched and coherently strained quantum wells
|
|
|
1989
|
39 |
5 |
p. 511-
1 p.
|
artikel
|
| 203 |
Molecular-beam epitaxial growth mechanisms on the GaAs(100) surface
|
|
|
1989
|
39 |
5 |
p. 511-
1 p.
|
artikel
|
| 204 |
Molecular beam stabilized CO2 laser
|
|
|
1989
|
39 |
5 |
p. 522-
1 p.
|
artikel
|
| 205 |
Monte Carlo investigations of the ion microprobe
|
|
|
1989
|
39 |
5 |
p. 525-
1 p.
|
artikel
|
| 206 |
Morphology of thermally etched GaAs substrate and molecular-beam epitaxial layers grown on its substrate
|
|
|
1989
|
39 |
5 |
p. 512-
1 p.
|
artikel
|
| 207 |
Multilayer PIXE analysis
|
|
|
1989
|
39 |
5 |
p. 529-530
2 p.
|
artikel
|
| 208 |
Neutron radiation effects in GaAs ion-implanted metal-semiconductor field-effect transistors
|
|
|
1989
|
39 |
5 |
p. 507-
1 p.
|
artikel
|
| 209 |
New achievements in Hg1−x
Cd
x
Te grown by molecular-beam epitaxy
|
|
|
1989
|
39 |
5 |
p. 511-
1 p.
|
artikel
|
| 210 |
Novel high-pressure isolation cell capable of reaching 120 atm mounted in an ultrahigh-vacuum chamber
|
|
|
1989
|
39 |
5 |
p. 491-
1 p.
|
artikel
|
| 211 |
Nuclear reaction analysis of shallow B and BF2 implants in Si
|
|
|
1989
|
39 |
5 |
p. 523-
1 p.
|
artikel
|
| 212 |
Observation of a dose-rate dependence in the production of point defects in quartz
|
|
|
1989
|
39 |
5 |
p. 507-
1 p.
|
artikel
|
| 213 |
Observation of laser-induced collisional energy transfer in xenon-argon mixtures
|
|
|
1989
|
39 |
5 |
p. 521-
1 p.
|
artikel
|
| 214 |
On the existence of point defects in physical vapor deposited films of TiN, ZrN, and HfN
|
|
|
1989
|
39 |
5 |
p. 502-503
2 p.
|
artikel
|
| 215 |
Operational limits and confinement in JET
|
|
|
1989
|
39 |
5 |
p. 520-
1 p.
|
artikel
|
| 216 |
Optical properties of spray-deposited tin oxide films
|
|
|
1989
|
39 |
5 |
p. 502-
1 p.
|
artikel
|
| 217 |
Optical properties of the thermal oxide-GaAs rough interface
|
|
|
1989
|
39 |
5 |
p. 516-
1 p.
|
artikel
|
| 218 |
Optical response of switching SmS in thin films prepared by reactive evaporation
|
|
|
1989
|
39 |
5 |
p. 493-
1 p.
|
artikel
|
| 219 |
Orientation control of the silicon film on insulator by laser recrystallization
|
|
|
1989
|
39 |
5 |
p. 515-
1 p.
|
artikel
|
| 220 |
Oxygen behavior during titanium silicide formation by rapid thermal annealing
|
|
|
1989
|
39 |
5 |
p. 515-
1 p.
|
artikel
|
| 221 |
Pattern transfer by dry etching through stencil masks
|
|
|
1989
|
39 |
5 |
p. 519-
1 p.
|
artikel
|
| 222 |
Performance of a planar magnetron sputtering apparatus with complex targets
|
|
|
1989
|
39 |
5 |
p. 496-
1 p.
|
artikel
|
| 223 |
Performance of the SRS vacuum system
|
|
|
1989
|
39 |
5 |
p. 489-
1 p.
|
artikel
|
| 224 |
Performance of the titanium sublimation trap in relatively poor vacuum systems
|
|
|
1989
|
39 |
5 |
p. 489-
1 p.
|
artikel
|
| 225 |
Phase stability of CuNiFe alloys under ion irradiation
|
|
|
1989
|
39 |
5 |
p. 510-
1 p.
|
artikel
|
| 226 |
Phenomenology of e-irradiated polymer breakdown
|
Marque, JP
|
|
1989
|
39 |
5 |
p. 443-452
10 p.
|
artikel
|
| 227 |
Phosphorus-divacanct complexes in irradiated silicon
|
|
|
1989
|
39 |
5 |
p. 508-
1 p.
|
artikel
|
| 228 |
Physical characterisation of dry etching plasmas used in semiconductor fabrication
|
|
|
1989
|
39 |
5 |
p. 519-
1 p.
|
artikel
|
| 229 |
Planarization of aluminum alloy film during high rate sputtering
|
|
|
1989
|
39 |
5 |
p. 495-
1 p.
|
artikel
|
| 230 |
Planar optical waveguides fabricated in LiNbO3 by multiple He+ implantations
|
|
|
1989
|
39 |
5 |
p. 508-
1 p.
|
artikel
|
| 231 |
Plasma characteristics and etch uniformity in CF4 magnetron etching using an annular permanent magnet
|
|
|
1989
|
39 |
5 |
p. 519-
1 p.
|
artikel
|
| 232 |
Plasma conditions for the deposition of TiN by biased activated reactive evaporation and dependence of the resistivity on prefered orientation
|
|
|
1989
|
39 |
5 |
p. 503-
1 p.
|
artikel
|
| 233 |
Plasma deposition of SiO2 gate insulators for a-Si thin-film transistors
|
|
|
1989
|
39 |
5 |
p. 502-
1 p.
|
artikel
|
| 234 |
Plasma-processed Ag/P4Se10(80° deposited) films as a negative resist
|
|
|
1989
|
39 |
5 |
p. 501-
1 p.
|
artikel
|
| 235 |
Plasma source ion-implantation technique for surface modification of materials
|
|
|
1989
|
39 |
5 |
p. 506-
1 p.
|
artikel
|
| 236 |
Predicting thin-film stoichiometry in reactive sputtering
|
|
|
1989
|
39 |
5 |
p. 497-
1 p.
|
artikel
|
| 237 |
Preparation and characterization of some tin oxide films
|
|
|
1989
|
39 |
5 |
p. 492-
1 p.
|
artikel
|
| 238 |
Preparation and properties of cubic boron nitride coatings
|
|
|
1989
|
39 |
5 |
p. 504-
1 p.
|
artikel
|
| 239 |
Preparation and properties of the dc reactively sputtered tungsten oxide films
|
|
|
1989
|
39 |
5 |
p. 497-
1 p.
|
artikel
|
| 240 |
Preparation of titanium nitride films by reactive ion plating and the influence of discharge current density on the film properties
|
|
|
1989
|
39 |
5 |
p. 501-502
2 p.
|
artikel
|
| 241 |
Production of atomic or molecular nitrogen ion beams using a multicusp and a microwave ion source
|
|
|
1989
|
39 |
5 |
p. 504-505
2 p.
|
artikel
|
| 242 |
Progress in deep-etch synchrotron radiation lithography
|
|
|
1989
|
39 |
5 |
p. 520-
1 p.
|
artikel
|
| 243 |
Properties and performance of chemical vapour-deposited TiC-coated ball-bearing components
|
|
|
1989
|
39 |
5 |
p. 499-
1 p.
|
artikel
|
| 244 |
Pt4Si9 formation by hot substrate ion beam mixing
|
|
|
1989
|
39 |
5 |
p. 514-
1 p.
|
artikel
|
| 245 |
Radial current distribution at a planar magnetron cathode
|
|
|
1989
|
39 |
5 |
p. 498-
1 p.
|
artikel
|
| 246 |
Radiation damage and annealing in graphite implanted with H2
+ and Mo+
|
|
|
1989
|
39 |
5 |
p. 510-
1 p.
|
artikel
|
| 247 |
Radiation damage of gallium arsenide induced by reactive ion etching
|
|
|
1989
|
39 |
5 |
p. 519-
1 p.
|
artikel
|
| 248 |
Raman scattering as a technique of measuring film thickness: interference effects in thin growing films
|
|
|
1989
|
39 |
5 |
p. 525-
1 p.
|
artikel
|
| 249 |
Raman spectra of Al
x
In1−x
As grown molecular-beam epitaxy
|
|
|
1989
|
39 |
5 |
p. 513-
1 p.
|
artikel
|
| 250 |
Range calculations at high ion energy—Part I
|
|
|
1989
|
39 |
5 |
p. 508-
1 p.
|
artikel
|
| 251 |
Rapid thermal annealing of InP using GaAs and InP proximity caps
|
|
|
1989
|
39 |
5 |
p. 514-515
2 p.
|
artikel
|
| 252 |
Reactive ion etching of crystalline quartz for SAW devices
|
Spangenberg, B
|
|
1989
|
39 |
5 |
p. 453-461
9 p.
|
artikel
|
| 253 |
Reactive synthesis of well-oriented zinc-oxide films by means of the facing targets sputtering method
|
|
|
1989
|
39 |
5 |
p. 499-
1 p.
|
artikel
|
| 254 |
Recent trends in LPCVD and PECVD
|
|
|
1989
|
39 |
5 |
p. 502-
1 p.
|
artikel
|
| 255 |
Reflection high-energy electron diffraction oscillations during growth of metallic overlayers on ideal and nonideal metallic substrates
|
|
|
1989
|
39 |
5 |
p. 525-
1 p.
|
artikel
|
| 256 |
Relationship between substrate bias and microstructure in magnetron-sputtered AlCu films
|
|
|
1989
|
39 |
5 |
p. 494-
1 p.
|
artikel
|
| 257 |
Reliable and versatile scanning tunneling microscope
|
|
|
1989
|
39 |
5 |
p. 526-
1 p.
|
artikel
|
| 258 |
Remarks on channeling radiation
|
|
|
1989
|
39 |
5 |
p. 523-
1 p.
|
artikel
|
| 259 |
Repeated deposition studies of the occurrence of large scale coalescence effect of electric field on the ageing of island silver films
|
|
|
1989
|
39 |
5 |
p. 492-493
2 p.
|
artikel
|
| 260 |
Residual defects in silicon after As+ ion implantation at self-annealing regimes
|
|
|
1989
|
39 |
5 |
p. 507-
1 p.
|
artikel
|
| 261 |
Resistivity changes and phase evolution in W-N films deposited in NeN2 and ArN2 discharges
|
|
|
1989
|
39 |
5 |
p. 498-
1 p.
|
artikel
|
| 262 |
Reverse annealing and low-temperature diffusion of boron in boron-implanted silicon
|
|
|
1989
|
39 |
5 |
p. 506-
1 p.
|
artikel
|
| 263 |
Reverse sequence of formation of titanium nitrides by nitrogen implantation
|
|
|
1989
|
39 |
5 |
p. 509-
1 p.
|
artikel
|
| 264 |
Rf oscillations in dc planar sputtering magnetrons
|
|
|
1989
|
39 |
5 |
p. 495-496
2 p.
|
artikel
|
| 265 |
RH4Si5 formation in the multilayer geometry: explosive reaction versus nucleation-controlled kinetics
|
|
|
1989
|
39 |
5 |
p. 517-
1 p.
|
artikel
|
| 266 |
Scanning low energy electron loss microscopy (SLEELM): metals on semiconductors
|
|
|
1989
|
39 |
5 |
p. 528-529
2 p.
|
artikel
|
| 267 |
Scanning tunneling microscope for low temperature, high magnetic field, and spatially resolved spectroscopy
|
|
|
1989
|
39 |
5 |
p. 526-
1 p.
|
artikel
|
| 268 |
Scanning tunneling microscopy of cubic silicon carbide surfaces
|
|
|
1989
|
39 |
5 |
p. 527-
1 p.
|
artikel
|
| 269 |
Scrubbing characteristics of CCl4 and C2F6 with a titanium sublimation trap
|
|
|
1989
|
39 |
5 |
p. 491-
1 p.
|
artikel
|
| 270 |
Secondary ion mass spectrometry depth profiling of Mo/SiO2/Si structural samples
|
|
|
1989
|
39 |
5 |
p. 524-
1 p.
|
artikel
|
| 271 |
Selectively thermalized sputtering for the deposition of magnetic films with special anisotropies
|
|
|
1989
|
39 |
5 |
p. 498-
1 p.
|
artikel
|
| 272 |
Selective reactive ion etching of GaAs on AlGaAs using CCl2F2 and He
|
|
|
1989
|
39 |
5 |
p. 520-
1 p.
|
artikel
|
| 273 |
SEM and EMPA analysis of impurities related to GaAs substrates and MBE grown GaAs layers
|
|
|
1989
|
39 |
5 |
p. 510-
1 p.
|
artikel
|
| 274 |
Si-ion implantation in GaAs and Al
x
Ga1−x
As
|
|
|
1989
|
39 |
5 |
p. 508-
1 p.
|
artikel
|
| 275 |
Silicon amorphization during heavy ion implantation—Part II
|
|
|
1989
|
39 |
5 |
p. 507-
1 p.
|
artikel
|
| 276 |
Silicon epitaxial growth for advanced device structures
|
|
|
1989
|
39 |
5 |
p. 510-
1 p.
|
artikel
|
| 277 |
Silicon-silicon dioxide interface: an infrared study
|
|
|
1989
|
39 |
5 |
p. 517-518
2 p.
|
artikel
|
| 278 |
Silicon surface cleaning by low dose argon-ion bombardment for low-temperature (750°C) epitaxial deposition. II. Epitaxial quality
|
|
|
1989
|
39 |
5 |
p. 513-
1 p.
|
artikel
|
| 279 |
Silicon surface cleaning by low dose argon-ion bombardment for low-temperature (750°C) epitaxial silicon deposition. I. Process considerations
|
|
|
1989
|
39 |
5 |
p. 513-
1 p.
|
artikel
|
| 280 |
Silicon trench etch in a hex reactor
|
|
|
1989
|
39 |
5 |
p. 518-
1 p.
|
artikel
|
| 281 |
Simple line-sampling apparatus for line frequency stroboscopic observation of periodic phenomena using scanning electron microscopy
|
|
|
1989
|
39 |
5 |
p. 526-
1 p.
|
artikel
|
| 282 |
Simultaneous formation of TiN and TiSi2 by lamp annealing in NH3 ambient and its application to diffusion barriers
|
|
|
1989
|
39 |
5 |
p. 517-
1 p.
|
artikel
|
| 283 |
Small multicusp H- source
|
|
|
1989
|
39 |
5 |
p. 505-
1 p.
|
artikel
|
| 284 |
Small scale reactor for plasma processing of moving substrate web
|
Griesser, Hans J
|
|
1989
|
39 |
5 |
p. 485-488
4 p.
|
artikel
|
| 285 |
Sodium diffusion in plasma-deposited amorphous oxygen-doped silicon nitride (a-SiON: H films)
|
|
|
1989
|
39 |
5 |
p. 502-
1 p.
|
artikel
|
| 286 |
Spherical targets impinged by intense ion beams
|
|
|
1989
|
39 |
5 |
p. 509-
1 p.
|
artikel
|
| 287 |
Sputtering yield and radiation damage by neutral beam bombardment
|
|
|
1989
|
39 |
5 |
p. 496-
1 p.
|
artikel
|
| 288 |
Stresses in sputtered TiSi multilayers and polycrystalline silicide films
|
|
|
1989
|
39 |
5 |
p. 516-
1 p.
|
artikel
|
| 289 |
Structural characterization of GaAs/ZnSe interfaces
|
|
|
1989
|
39 |
5 |
p. 514-
1 p.
|
artikel
|
| 290 |
Structural investigation of helium ion-beam-irradiated glassy carbon
|
|
|
1989
|
39 |
5 |
p. 528-
1 p.
|
artikel
|
| 291 |
Structural properties of the ZnSe/GaAs system grown by molecular-beam epitaxy
|
|
|
1989
|
39 |
5 |
p. 513-514
2 p.
|
artikel
|
| 292 |
Structure and composition of ZrN and (Ti,Al)N coatings
|
|
|
1989
|
39 |
5 |
p. 503-
1 p.
|
artikel
|
| 293 |
Structure, internal stresses, adhesion and wear resistance of sputtered alumina coatings
|
|
|
1989
|
39 |
5 |
p. 499-
1 p.
|
artikel
|
| 294 |
Structure, properties and applications of TiN coatings produced by sputter ion plating
|
|
|
1989
|
39 |
5 |
p. 504-
1 p.
|
artikel
|
| 295 |
Studies of Co/Ga1−x
Al
x
interfaces fabricated in ultrahigh vacuum
|
|
|
1989
|
39 |
5 |
p. 514-
1 p.
|
artikel
|
| 296 |
Studies of superconductors using a low-temperature, high-field scanning tunneling microscope
|
|
|
1989
|
39 |
5 |
p. 527-
1 p.
|
artikel
|
| 297 |
Study of molecular-beam epitaxy GaAs1−xSbx (x < 0.76) grown on GaAs (100)
|
|
|
1989
|
39 |
5 |
p. 511-
1 p.
|
artikel
|
| 298 |
Study of the initial aluminide phase growth in Al/Pt couples
|
|
|
1989
|
39 |
5 |
p. 518-
1 p.
|
artikel
|
| 299 |
Study of the rapid thermal nitridation and silicidation of Ti using elastic recoil detection. I. Ti on Si
|
|
|
1989
|
39 |
5 |
p. 514-
1 p.
|
artikel
|
| 300 |
Subharmonic responses of ion-implanted arrays reflecting magnetostatic forward volume waves
|
|
|
1989
|
39 |
5 |
p. 510-
1 p.
|
artikel
|
| 301 |
Surface and interface characterization of heat-treated (Ti,Al)N coatings on high speed steel substrates
|
|
|
1989
|
39 |
5 |
p. 526-
1 p.
|
artikel
|
| 302 |
Synthesis and properties of thin film polymorphs of molybdenum trioxide
|
|
|
1989
|
39 |
5 |
p. 493-
1 p.
|
artikel
|
| 303 |
The bombarding-angle dependence of sputtering yields under various surface conditions
|
|
|
1989
|
39 |
5 |
p. 496-497
2 p.
|
artikel
|
| 304 |
The effect of nitrogen content on the critical normal force in scratc testing of TiN films
|
|
|
1989
|
39 |
5 |
p. 500-
1 p.
|
artikel
|
| 305 |
The effects of processing parameters on the microstructure and properties of sputter-deposited TiW thin film diffusion barriers
|
|
|
1989
|
39 |
5 |
p. 495-
1 p.
|
artikel
|
| 306 |
The effects of surface topography in nuclear microprobe Rutherford backscattering analysis
|
|
|
1989
|
39 |
5 |
p. 523-
1 p.
|
artikel
|
| 307 |
The formation of a continuous amorphous layer by room-temperature implantation of boron into silicon
|
|
|
1989
|
39 |
5 |
p. 509-
1 p.
|
artikel
|
| 308 |
The Giotto implanted ion spectrometer (IIS): principles of the electronic operation and data collection
|
|
|
1989
|
39 |
5 |
p. 522-
1 p.
|
artikel
|
| 309 |
The heavy-ion microprobe at GSI—used for single ion micro-mechanics
|
|
|
1989
|
39 |
5 |
p. 505-
1 p.
|
artikel
|
| 310 |
The influence of electric field on the formation of radiation damage in silicon
|
|
|
1989
|
39 |
5 |
p. 508-
1 p.
|
artikel
|
| 311 |
The influence of N2, partial pressure and substrate bias on electron density and temperature in a dc sputtering diode
|
|
|
1989
|
39 |
5 |
p. 490-
1 p.
|
artikel
|
| 312 |
The influence of substrate temperature on the optical properties of ion-assisted reactively evaporated vanadium oxide thin films
|
|
|
1989
|
39 |
5 |
p. 493-
1 p.
|
artikel
|
| 313 |
The influence of the TiN deposition temperature on the critical load and hardness of hardened steels
|
|
|
1989
|
39 |
5 |
p. 500-
1 p.
|
artikel
|
| 314 |
The initial nucleation and growth of gold on sodium chloride for substrate temperatures between 123 and 448 K
|
|
|
1989
|
39 |
5 |
p. 492-
1 p.
|
artikel
|
| 315 |
The intercalation and exfoliation of tungsten disulfide
|
|
|
1989
|
39 |
5 |
p. 516-
1 p.
|
artikel
|
| 316 |
The interface formation and thermal stability of Ag overlayers grown on cubic SiC(100)
|
|
|
1989
|
39 |
5 |
p. 525-
1 p.
|
artikel
|
| 317 |
The interrelationship between internal stress, processing parameters and microstructure of physically vapour deposited and thermally sprayed coatings
|
|
|
1989
|
39 |
5 |
p. 500-501
2 p.
|
artikel
|
| 318 |
The mechanical properties of thin films: a review
|
|
|
1989
|
39 |
5 |
p. 501-
1 p.
|
artikel
|
| 319 |
The microstructure and electrical properties of contacts formed in the Ni/Al/Si system due to rapid processing
|
|
|
1989
|
39 |
5 |
p. 515-
1 p.
|
artikel
|
| 320 |
The model of nucleation of vacancy clusters in the cascade range in the stage of the thermal spike
|
|
|
1989
|
39 |
5 |
p. 508-
1 p.
|
artikel
|
| 321 |
Theoretical studies of the modern turbomolecular pump
|
|
|
1989
|
39 |
5 |
p. 489-
1 p.
|
artikel
|
| 322 |
Theory of scanning tunneling spectroscopy
|
|
|
1989
|
39 |
5 |
p. 527-
1 p.
|
artikel
|
| 323 |
Theory of the local tunneling spectrum of a variating adsorbate
|
|
|
1989
|
39 |
5 |
p. 527-
1 p.
|
artikel
|
| 324 |
The physical basis for numerical fluid simulations in laser fusion
|
|
|
1989
|
39 |
5 |
p. 520-521
2 p.
|
artikel
|
| 325 |
The preparation and characterization of titanium boride films
|
|
|
1989
|
39 |
5 |
p. 497-
1 p.
|
artikel
|
| 326 |
The relationship between hardness and scratch adhesion
|
|
|
1989
|
39 |
5 |
p. 500-
1 p.
|
artikel
|
| 327 |
Thermal behavior and range distribution of 209Bi implanted into the AI/V bilayer structure
|
|
|
1989
|
39 |
5 |
p. 514-
1 p.
|
artikel
|
| 328 |
Thermally and ion-induced reaction between Si and binary metallic alloys
|
|
|
1989
|
39 |
5 |
p. 517-
1 p.
|
artikel
|
| 329 |
Thermal nitridation of silicon dioxide films
|
|
|
1989
|
39 |
5 |
p. 517-
1 p.
|
artikel
|
| 330 |
The status of fusion research
|
|
|
1989
|
39 |
5 |
p. 520-
1 p.
|
artikel
|
| 331 |
The structure-mechanical property relationship of amorphous silicon monoxide thin films
|
|
|
1989
|
39 |
5 |
p. 501-
1 p.
|
artikel
|
| 332 |
The surface topography of pyrolitic carbons and of gold thin films by scanning tunneling microscopy:grain boundaries and surface defects
|
|
|
1989
|
39 |
5 |
p. 526-527
2 p.
|
artikel
|
| 333 |
The tribological properties of MoS2 coatings in vacuum, low relative humidity, and high relative humidity environments
|
|
|
1989
|
39 |
5 |
p. 498-
1 p.
|
artikel
|
| 334 |
Thin film characterization using a mechanical properties microprobe
|
|
|
1989
|
39 |
5 |
p. 500-
1 p.
|
artikel
|
| 335 |
Thin-film thermocouple gauge
|
|
|
1989
|
39 |
5 |
p. 490-
1 p.
|
artikel
|
| 336 |
Thomson parabola ion energy analyzer with a coincident and jitterfree applied electric field ramp
|
|
|
1989
|
39 |
5 |
p. 522-
1 p.
|
artikel
|
| 337 |
Three-dimensional computer simulation of ion beam scattering by an electrostatic reflector
|
|
|
1989
|
39 |
5 |
p. 525-
1 p.
|
artikel
|
| 338 |
TiN coatings on M2 steel produced by plasma-assisted chemical vapor deposition
|
|
|
1989
|
39 |
5 |
p. 503-504
2 p.
|
artikel
|
| 339 |
Titanium gettering in silicon: investigation by deep level transient spectroscopy and secondary ion mass spectroscopy
|
|
|
1989
|
39 |
5 |
p. 524-
1 p.
|
artikel
|
| 340 |
Ti
x
Al1−x
N films deposited plating with an arc evaporator
|
|
|
1989
|
39 |
5 |
p. 503-
1 p.
|
artikel
|
| 341 |
Transient enhanced diffusion of ion-implanted boron in Si during rapid thermal annealing
|
|
|
1989
|
39 |
5 |
p. 507-
1 p.
|
artikel
|
| 342 |
Transmission electron microscopy for the determination of the microstructure of thin films and interfaces
|
|
|
1989
|
39 |
5 |
p. 527-
1 p.
|
artikel
|
| 343 |
Transmission electron microscopy of elastic relaxation effects in Si-Ge strained layer superlattice structures
|
|
|
1989
|
39 |
5 |
p. 528-
1 p.
|
artikel
|
| 344 |
Transmission electron microscopy of gold-silicon interactions on the backside of silicon wafers
|
|
|
1989
|
39 |
5 |
p. 526-
1 p.
|
artikel
|
| 345 |
Transmission electron microscopy studies of brown and golden titanium nitride thin films as diffusion barriers in very large scale integrated circuits
|
|
|
1989
|
39 |
5 |
p. 528-
1 p.
|
artikel
|
| 346 |
Transport in refractory metals and their interaction with SiO2: coparison of tungsten and molybdenum
|
|
|
1989
|
39 |
5 |
p. 516-
1 p.
|
artikel
|
| 347 |
Tungsten and tungsten silicide etching in halogenated plasmas
|
|
|
1989
|
39 |
5 |
p. 518-
1 p.
|
artikel
|
| 348 |
Ultrahigh-vacuum system for surface studies using high-energy ion scattering and X-ray photoemission spectroscopy
|
|
|
1989
|
39 |
5 |
p. 529-
1 p.
|
artikel
|
| 349 |
Ultramicrohardness measurements of coated samples
|
|
|
1989
|
39 |
5 |
p. 501-
1 p.
|
artikel
|
| 350 |
Ultraviolet copper-ion laser with enhanced operation period due to UHV technology
|
|
|
1989
|
39 |
5 |
p. 521-
1 p.
|
artikel
|
| 351 |
Universal relations between range and damage profile parameters
|
|
|
1989
|
39 |
5 |
p. 508-
1 p.
|
artikel
|
| 352 |
Vacuum annealing studies of thin TiC layers on steels
|
|
|
1989
|
39 |
5 |
p. 511-
1 p.
|
artikel
|
| 353 |
Vacuum vessel heating system for the advanced toroidal facility
|
|
|
1989
|
39 |
5 |
p. 490-
1 p.
|
artikel
|
| 354 |
Variational and transport properties of high-pressure arc plasmas
|
|
|
1989
|
39 |
5 |
p. 522-
1 p.
|
artikel
|
| 355 |
Very high-vacuum heat treatment facility
|
|
|
1989
|
39 |
5 |
p. 491-
1 p.
|
artikel
|
| 356 |
Wafer back metallization for semiconductor packaging
|
|
|
1989
|
39 |
5 |
p. 516-
1 p.
|
artikel
|
| 357 |
Wall ion current in high-current vacuum arcs
|
|
|
1989
|
39 |
5 |
p. 521-
1 p.
|
artikel
|
| 358 |
Wavelength- and thickness-independent optical coatings for integrated circuit metallization layers
|
|
|
1989
|
39 |
5 |
p. 517-
1 p.
|
artikel
|
| 359 |
Wear resistance of metastable NiB alloys produced by chemical vapor deposition
|
|
|
1989
|
39 |
5 |
p. 499-
1 p.
|
artikel
|
| 360 |
WN
x
: Properties and applications
|
|
|
1989
|
39 |
5 |
p. 495-
1 p.
|
artikel
|
| 361 |
Young's modulus of TiN, TiC, ZrN and HfN
|
|
|
1989
|
39 |
5 |
p. 499-
1 p.
|
artikel
|
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