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                             103 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Absolute emission cross sections in collisions between Ar+ and He, Ne Zi-ming, Lei
 1989
 39 2-4 p. 409-411
3 p.
 artikel
2 Accelerator-based chemiluminescence from steady-state gas-surface reactions Veje, E.
 1989
 39 2-4 p. 429-430
2 p.
 artikel
3 A Monte Carlo simulation of angular distribution in low energy sputtering Li-Ping, Zheng
 1989
 39 2-4 p. 353-354
2 p.
 artikel
4 A Monte Carlo simulation of range and damage distributions for energetic ions in amorphous solids Li, Wen-Zhi
 1989
 39 2-4 p. 339-341
3 p.
 artikel
5 A Monte Carlo simulation of the effect of the surface oxide layer on blocking dips Pan, Zhengying
 1989
 39 2-4 p. 343-345
3 p.
 artikel
6 Analysis of InGaAs/InP multi-quantum-well structures by ion backscattering Leier, H
 1989
 39 2-4 p. 79-82
4 p.
 artikel
7 A new SILO process for VLSI isolation using N2 + ion implantation Li, Duan
 1989
 39 2-4 p. 211-213
3 p.
 artikel
8 An improved on-demand beam pulsing system and its application to art and archaeology Xianzhou Zeng,
 1989
 39 2-4 p. 91-95
5 p.
 artikel
9 Annealing of ion induced damage and alteration of composition in the near-surface of ion-implanted LiNbO3 Wei, Shang
 1989
 39 2-4 p. 287-288
2 p.
 artikel
10 Anodic polarization study of the effect of double ion beam mixing on Duralumin corrosion behavior Peilu, Wang
 1989
 39 2-4 p. 289-291
3 p.
 artikel
11 Application of RIKEN 160 cm cyclotron Kohno, Isao
 1989
 39 2-4 p. 401-404
4 p.
 artikel
12 Argon-boron double implantation in silicon Lu-quan, Gao
 1989
 39 2-4 p. 195-197
3 p.
 artikel
13 A study of the chemical driving force in ion mixing of metal-metal systems Jian-Qiang, Lü
 1989
 39 2-4 p. 275-277
3 p.
 artikel
14 A study on phase transformation of As heavily implanted Si during post-processing following rapid thermal annealing Zhiheng, Lu
 1989
 39 2-4 p. 159-162
4 p.
 artikel
15 Atomic spectroscopy and polarized beams at small accelerators using grazing ion-surface scattering Winter, H
 1989
 39 2-4 p. 375-379
5 p.
 artikel
16 Beam identification system for a 2 MV mass separator Lennard, WN
 1989
 39 2-4 p. 413-415
3 p.
 artikel
17 Boron implantation of diamond-like carbon films Shichang, Cheng
 1989
 39 2-4 p. 183-185
3 p.
 artikel
18 Boron profiles in amorphous and crystalline silicon Zhihao, Zheng
 1989
 39 2-4 p. 323-324
2 p.
 artikel
19 Channeling studies in strained-layer epitaxial structures Davies, JA
 1989
 39 2-4 p. 73-77
5 p.
 artikel
20 Channeling studies of Pb1−xSnxTe/PbSeyTe1−y epitaxial structures Robinson, BJ
 1989
 39 2-4 p. 133-135
3 p.
 artikel
21 Characterization of high-energy heavy-ion implanted InP crystals by a variety of techniques Xiong, Fulin
 1989
 39 2-4 p. 177-182
6 p.
 artikel
22 Characterization of radiation damage by ellipsometry and channeling Shuzhi, Zhang
 1989
 39 2-4 p. 147-149
3 p.
 artikel
23 Coating film formation by dynamic mixing method Fujimoto, Fuminori
 1989
 39 2-4 p. 361-366
6 p.
 artikel
24 Concentration profiling of nitrogen in steel and amorphous silicon by 15N(p,αγ)12C nuclear reaction analysis Changgeng, Liao
 1989
 39 2-4 p. 119-120
2 p.
 artikel
25 Depth profile of 18O at the titanium surfaces using the nuclear reaction 18O(p, α)15N Xiting, Lu
 1989
 39 2-4 p. 123-124
2 p.
 artikel
26 Distribution of deposited energy by low energy ion implantation in compound materials Binyao, Jiang
 1989
 39 2-4 p. 331-333
3 p.
 artikel
27 Editorial: Software survey section 1989
 39 2-4 p. I-IV
nvt p.
 artikel
28 Effects of B, N, Cr and Mo ion implantation on the corrosion resistance of pure iron and its alloys (GCr15 and Cr4Mo4V) Haolin, Lu
 1989
 39 2-4 p. 187-189
3 p.
 artikel
29 Effects of ion implantation on nitriding metal by the plasma source nitriding Nunogaki, M
 1989
 39 2-4 p. 281-284
4 p.
 artikel
30 Electrical properties of AlMn amorphous films formed by ion beam mixing Fan, Xiangjun
 1989
 39 2-4 p. 251-253
3 p.
 artikel
31 Electronic sputtering of biomolecules and its application in mass spectrometry Håkansson, P.
 1989
 39 2-4 p. 397-399
3 p.
 artikel
32 Electronic stopping powers derived from range measurements for ions at low velocity Yueyuan, Xia
 1989
 39 2-4 p. 347-349
3 p.
 artikel
33 Fast ion induced defects in silicon and semiconductor applications Hallén, A
 1989
 39 2-4 p. 199-202
4 p.
 artikel
34 Formation of Ag/Si and Al/Si films by ion assisted deposition Xian-zheng, Pan
 1989
 39 2-4 p. 425-428
4 p.
 artikel
35 Formation of GaP1−xNx alloys by double ion implantation Zhenjin, Lin
 1989
 39 2-4 p. 215-216
2 p.
 artikel
36 Formation of TiSi2 and shallow junction by As+ ion beam mixing and infrared rapid heat treatment Min, Ye
 1989
 39 2-4 p. 231-233
3 p.
 artikel
37 High energy ion implantation into silicon— an application in CMOS technology Grouillet, André
 1989
 39 2-4 p. 163-167
5 p.
 artikel
38 High-resolution PIXE with crystal spectrometer and position-sensitive proportional counter Ishii, K
 1989
 39 2-4 p. 97-100
4 p.
 artikel
39 Hydrogen implantation of the high Tc superconductor YBa2Cu3O7 Pang, Guo-qiang
 1989
 39 2-4 p. 285-286
2 p.
 artikel
40 Improvement of the fatigue lifetime of steel implanted with N after heat treatment Guiyun, Luo
 1989
 39 2-4 p. 279-280
2 p.
 artikel
41 Improving electric contacts by ion implantation Shiru, Xu
 1989
 39 2-4 p. 301-302
2 p.
 artikel
42 IMSOP—a program for the simulation and optimization of ion implantation Zhang, Bo-xu
 1989
 39 2-4 p. 351-352
2 p.
 artikel
43 Influence of As-flux on As enhanced diffusion and residual defects Tonghe, Zhang
 1989
 39 2-4 p. 235-238
4 p.
 artikel
44 Influence of Se+ and S+ implantation on deep levels in ZnSe 1989
 39 2-4 p. 433-
1 p.
 artikel
45 Influence of Se+ and S+ implantation on deep levels in ZnSe 1989
 39 2-4 p. 433-
1 p.
 artikel
46 Influence of temperature on He-implanted stainless steel Yupu, Li
 1989
 39 2-4 p. 267-269
3 p.
 artikel
47 Interaction effects between arsenic and boron ions implanted in silicon during furnace annealing and RTA Guohui, Li
 1989
 39 2-4 p. 205-207
3 p.
 artikel
48 Investigation of ion beam induced phase transformation in Ni/Si, Nb/Si, Mo/Si and Ti/Si systems Xihong, Yang
 1989
 39 2-4 p. 191-193
3 p.
 artikel
49 Ion-beam induced orientation growth of PtSi Lijia, Yang
 1989
 39 2-4 p. 227-229
3 p.
 artikel
50 Ion beam interactions with matter proceedings of the international symposium on applications of ion beams produced by small accelerators 1989
 39 2-4 p. 435-438
4 p.
 artikel
51 Ion beam mixing for ohmic contact formation to n-type GaAs Jie, Zhao
 1989
 39 2-4 p. 303-305
3 p.
 artikel
52 Ion beam profiling of small objects using resonant nuclear reactions Edge, RD
 1989
 39 2-4 p. 101-105
5 p.
 artikel
53 Ion-induced sputtering as a light source for atomic spectroscopy Veje, E
 1989
 39 2-4 p. 319-321
3 p.
 artikel
54 Lattice location of solute atoms by channeling Swanson, ML
 1989
 39 2-4 p. 87-90
4 p.
 artikel
55 Low energy ion beam scattering for surface analysis Heiland, W
 1989
 39 2-4 p. 367-371
5 p.
 artikel
56 L-shell ionization of Eu, Gd, Dy and Ho by 2.25–4.50 MeV incident Li2+ ions Xiaohong, Cai
 1989
 39 2-4 p. 393-395
3 p.
 artikel
57 Magnetic order at Tb surfaces determined by electron capture spectroscopy (ECS) Rau, C
 1989
 39 2-4 p. 129-131
3 p.
 artikel
58 Materials modification by MeV ion implantation Saris, FW
 1989
 39 2-4 p. 173-176
4 p.
 artikel
59 Megavolt system for ion implantation and analysis Koudijs, R
 1989
 39 2-4 p. 381-384
4 p.
 artikel
60 MeV He microbeam analysis of a semiconductor integrated circuit Peiran, Zhu
 1989
 39 2-4 p. 151-152
2 p.
 artikel
61 Modification of polyvinyl chloride surface electrostatic properties by an ion beam Shang-he, Liu
 1989
 39 2-4 p. 271-272
2 p.
 artikel
62 New patents 1989
 39 2-4 p. xvii-xxi
nvt p.
 artikel
63 Nitrogen profiling in implanted iron sample by 14N(d,α1)12C reaction Xuanwen, Hu
 1989
 39 2-4 p. 107-109
3 p.
 artikel
64 Nuclear reaction analysis of oxygen by means of a small magnetic spectrometer and a new deconvolution method Wei-lin, Jiang
 1989
 39 2-4 p. 115-117
3 p.
 artikel
65 Performance of a new high current implanter for ion hardening Sønderskov, Torben
 1989
 39 2-4 p. 373-374
2 p.
 artikel
66 Physics with fast molecular ions Gemmell, DS
 1989
 39 2-4 p. 355-359
5 p.
 artikel
67 PIXE analysis of trace elements in hair and their correlation with acute cerebrovascular diseases Dazhong, Zhang
 1989
 39 2-4 p. 139-141
3 p.
 artikel
68 Preface Wang, Zhong-lie
 1989
 39 2-4 p. 71-72
2 p.
 artikel
69 Proceedings of the international symposium on applications of ion beams produced by small accelerators 1989
 39 2-4 p. i-xvi
nvt p.
 artikel
70 Properties of SOI structures formed by high dose oxygen implantation into silicon Diantong, Lu
 1989
 39 2-4 p. 219-221
3 p.
 artikel
71 Proton and alpha particle induced L-shell ionization of rare earth and heavy eleme nts Zhaoyuan, Liu
 1989
 39 2-4 p. 421-423
3 p.
 artikel
72 Proton channeling effect of α-LilO3 single crystal Jiarui, Liu
 1989
 39 2-4 p. 83-86
4 p.
 artikel
73 Purification of P2+ beam and anti-punch-through implantation of P-channel MOSFET Jin-hua, Li
 1989
 39 2-4 p. 209-210
2 p.
 artikel
74 Range distribution of heavy ions in multi-elemental targets Ke-Ming, Wang
 1989
 39 2-4 p. 315-318
4 p.
 artikel
75 RBS studies of As redistribution during silicide formation by RTA Wei, Zhou
 1989
 39 2-4 p. 153-157
5 p.
 artikel
76 Reverse annealing behaviour and shallow p+n junction characteristics of BF2 + implanted silicon Jialu, Liu
 1989
 39 2-4 p. 217-218
2 p.
 artikel
77 Review of 400 kV and 500 kV systems for ion implantation and analysis van Oosterhout, H.A.P.
 1989
 39 2-4 p. 385-391
7 p.
 artikel
78 Rutherford backscattering spectrometry of real CdTe surfaces Perillo, E
 1989
 39 2-4 p. 125-127
3 p.
 artikel
79 Si ion implantation into LEC semi-insulating GaAs Lee, Dowson
 1989
 39 2-4 p. 203-204
2 p.
 artikel
80 SIMS characterization of hetero-isotopic cluster ions of lithium fluoride Wang, Guang-hou
 1989
 39 2-4 p. 137-138
2 p.
 artikel
81 Singly and doubly charged ion collisions with neutrals into excited states Jia-rui, Liu
 1989
 39 2-4 p. 417-419
3 p.
 artikel
82 SOI structure by N+ 2 ion implantation into silicon 1989
 39 2-4 p. 433-
1 p.
 artikel
83 Some new structural transformations induced by ion beams Liu, Bai-Xin
 1989
 39 2-4 p. 169-171
3 p.
 artikel
84 Stability of displacement cascade damage in iron under high energy self ion bombardment Dunlop, A
 1989
 39 2-4 p. 247-250
4 p.
 artikel
85 Sticking studies of atoms to different surfaces at the Van de Graaff laboratory, AFI-Stockholm Emmoth, B
 1989
 39 2-4 p. 329-330
2 p.
 artikel
86 Stopping power at the solid surface Kitagawa, M
 1989
 39 2-4 p. 335-337
3 p.
 artikel
87 Structural change in iron implanted potassium bromide crystals Wang, Guang-hou
 1989
 39 2-4 p. 431-432
2 p.
 artikel
88 Structural correlation in tantalum nitride formation by direct nitrogen implantation Zhou, X
 1989
 39 2-4 p. 307-308
2 p.
 artikel
89 Superconductivity in Mo films after implanting Be ions Yu-Qiu, Liu
 1989
 39 2-4 p. 273-274
2 p.
 artikel
90 The annealing of MeV energy boron ions implanted into silicon Wuxing, Lu
 1989
 39 2-4 p. 223-226
4 p.
 artikel
91 The computer simulation of ISS Hou, M
 1989
 39 2-4 p. 309-314
6 p.
 artikel
92 The dependencies of the dynamic recoil mixing zone on beam energy of irradiation, dose, dose rate and temperature of sample Yucai, Feng
 1989
 39 2-4 p. 255-257
3 p.
 artikel
93 The diffusion of metal in polymer films Zhang, Ji-Zhong
 1989
 39 2-4 p. 143-145
3 p.
 artikel
94 The effect of temperature on ion beam mixing of Mo films on Si substrates Wenyu, Gao
 1989
 39 2-4 p. 259-261
3 p.
 artikel
95 The elastic recoil detection by C ions for hydrogen profiling in solids Jiarui, Liu
 1989
 39 2-4 p. 121-122
2 p.
 artikel
96 The enhanced adhesion properties of metallic thin films on metal substrates by ion implantation Lai, Zuwu
 1989
 39 2-4 p. 405-407
3 p.
 artikel
97 The evolution of ΔE/ΔX for 7 MeV/u 16O ions in carbon Bridwell, LB
 1989
 39 2-4 p. 325-327
3 p.
 artikel
98 The mechanical and corrosion behaviour of iron implanted with N+ Yi, Li
 1989
 39 2-4 p. 263-266
4 p.
 artikel
99 The microstructure of N+ implanted steels Guangjun, Cai
 1989
 39 2-4 p. 239-241
3 p.
 artikel
100 The modification in fatigue life of pure polycrystalline nickel by carbon ion implantation Xu, MH
 1989
 39 2-4 p. 297-299
3 p.
 artikel
101 The modification of the mechanical properties of soft metals by ion implantation Wang, Yi-hua
 1989
 39 2-4 p. 293-295
3 p.
 artikel
102 The observation of water penetration into Na-beta-alumina by 1H(15N, α γ) 12C reaction Chengzhou, Ji
 1989
 39 2-4 p. 111-113
3 p.
 artikel
103 The structural and electrical properties of ion-beam mixed tungsten silicides Xunliang, Ding
 1989
 39 2-4 p. 243-245
3 p.
 artikel
                             103 gevonden resultaten
 
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