| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A comparison of helium ion and fast atom scattering from copper surfaces
|
Xu, N.S.
|
|
1989
|
39 |
11-12 |
p. 1201-1205
5 p.
|
artikel
|
| 2 |
A fundamental approach to surface evolution during growth and erosion
|
Katardjiev, IV
|
|
1989
|
39 |
11-12 |
p. 1069-1075
7 p.
|
artikel
|
| 3 |
Ag+ implantation in Al2O3, LiNbO3 and quartz
|
Rahmani, M
|
|
1989
|
39 |
11-12 |
p. 1157-1162
6 p.
|
artikel
|
| 4 |
A molecular dynamics study of collisionally-excited sputtered atoms
|
|
|
1989
|
39 |
11-12 |
p. 1212-
1 p.
|
artikel
|
| 5 |
Analysis of epitaxial calcium fluoride on silicon by RBS and channelling of 340 keV protons
|
|
|
1989
|
39 |
11-12 |
p. 1209-
1 p.
|
artikel
|
| 6 |
An arc multiply-charged ion source for cyclotrons
|
|
|
1989
|
39 |
11-12 |
p. 1208-
1 p.
|
artikel
|
| 7 |
Beam transport in a single gap accelerator
|
Surrey, E
|
|
1989
|
39 |
11-12 |
p. 1035-1037
3 p.
|
artikel
|
| 8 |
Broad-beam ion source technology and applications
|
Kaufman, Harold R
|
|
1989
|
39 |
11-12 |
p. 1175-1180
6 p.
|
artikel
|
| 9 |
Characterisation of a small negative ion source
|
Surrey, E
|
|
1989
|
39 |
11-12 |
p. 1145-1147
3 p.
|
artikel
|
| 10 |
Characterization of damage caused by heavy-ion irradiation of alpha-titanium
|
Yellen, DH
|
|
1989
|
39 |
11-12 |
p. 1141-1143
3 p.
|
artikel
|
| 11 |
Collapse of cascades produced by low-energy ion irradiation of gold
|
Calder, AF
|
|
1989
|
39 |
11-12 |
p. 1115-1118
4 p.
|
artikel
|
| 12 |
Computer simulation of ion-bombardment induced sputtering of Rh(111) surface
|
Chakarov, IR
|
|
1989
|
39 |
11-12 |
p. 1123-1126
4 p.
|
artikel
|
| 13 |
Computer simulation of ion implantation range profiles in single crystals materials
|
|
|
1989
|
39 |
11-12 |
p. 1211-
1 p.
|
artikel
|
| 14 |
Contamination problems with broad beam ion sources when producing NbNb2O5Pb alloy Josephson junctions
|
Mantle, H
|
|
1989
|
39 |
11-12 |
p. 1135-1139
5 p.
|
artikel
|
| 15 |
Control of plasma parameters in a cylinder symmetrical capacitively coupled rf ion source by use of a magnetic field
|
Korzec, D.
|
|
1989
|
39 |
11-12 |
p. 1185-1190
6 p.
|
artikel
|
| 16 |
Daresbury isotope separator and nuclear orientation facility
|
Walker, P.M.
|
|
1989
|
39 |
11-12 |
p. 1039-1042
4 p.
|
artikel
|
| 17 |
Effect of implantation temperature on electrical properties of buried nitride SOI structures
|
|
|
1989
|
39 |
11-12 |
p. 1211-
1 p.
|
artikel
|
| 18 |
Effects of 200 keV B+ ion implantation on stress and adhesion of magnetron sputtered Ti on glass and single crystal Si
|
|
|
1989
|
39 |
11-12 |
p. 1207-
1 p.
|
artikel
|
| 19 |
Electrical characterization of Si/SiO2 interfaces under silicon self-implantation
|
|
|
1989
|
39 |
11-12 |
p. 1208-1209
2 p.
|
artikel
|
| 20 |
Electron detachment cross-sections in low energy heavy negative ion beam appratus
|
Ishikawa, J
|
|
1989
|
39 |
11-12 |
p. 1127-1130
4 p.
|
artikel
|
| 21 |
Enhanced electrical activation of Zn and Be implants in GaAs by the co-implantation of phosphorus
|
Tang, ACT
|
|
1989
|
39 |
11-12 |
p. 1061-1064
4 p.
|
artikel
|
| 22 |
Formation and stability of sputtered clusters
|
Andersen, Hans Henrik
|
|
1989
|
39 |
11-12 |
p. 1095-1099
5 p.
|
artikel
|
| 23 |
High current metallic ion beams
|
Rück, D.M.
|
|
1989
|
39 |
11-12 |
p. 1191-1193
3 p.
|
artikel
|
| 24 |
Impact collision ion scattering spectrometry studies of thin metal overlayers on Si(111) surfaces
|
Chang, C.S.
|
|
1989
|
39 |
11-12 |
p. 1195-1199
5 p.
|
artikel
|
| 25 |
Implanted oxide layers in silicon—establishment of a critical dose for direct formation of a stoichiometric buried SiO2 layer
|
Yankov, RA
|
|
1989
|
39 |
11-12 |
p. 1167-1170
4 p.
|
artikel
|
| 26 |
Impurity diffusion in silicon enhanced by low energy ion bombardment
|
|
|
1989
|
39 |
11-12 |
p. 1207-
1 p.
|
artikel
|
| 27 |
Inelastic ion surface collisions
|
|
|
1989
|
39 |
11-12 |
p. 1212-
1 p.
|
artikel
|
| 28 |
Ion beam deposition of β-SiC layers onto α-SiC substrates
|
Withrow, SP
|
|
1989
|
39 |
11-12 |
p. 1065-1068
4 p.
|
artikel
|
| 29 |
Ion beam source for materials analysis
|
|
|
1989
|
39 |
11-12 |
p. 1207-
1 p.
|
artikel
|
| 30 |
Ion mass spectrum scanning and mass peak locking using IBM- PC/XT
|
|
|
1989
|
39 |
11-12 |
p. 1210-
1 p.
|
artikel
|
| 31 |
Liquid metal ion sources and their applications to sub-micron spatial resolution surface chemical analysis
|
|
|
1989
|
39 |
11-12 |
p. 1211-
1 p.
|
artikel
|
| 32 |
Low energy ion beams—5. Selected proceedings of the fifth international conference
|
|
|
1989
|
39 |
11-12 |
p. 1213-
1 p.
|
artikel
|
| 33 |
Low temperature formation of silicon nitride and oxide films by the simultaneous use of a microwave ion source and an ICB source
|
Ishikawa, J
|
|
1989
|
39 |
11-12 |
p. 1111-1113
3 p.
|
artikel
|
| 34 |
Matching, transport and bunching of four 40-keV ion beams with an electrostatic quadrupole channel
|
Bannenberg, J.G.
|
|
1989
|
39 |
11-12 |
p. 1031-1033
3 p.
|
artikel
|
| 35 |
Modelling of liquid-metal ion sources
|
Forbes, Richard G
|
|
1989
|
39 |
11-12 |
p. 1153-1155
3 p.
|
artikel
|
| 36 |
Modification of chemical properties by ion beam mixing techniques
|
Wolf, G.K.
|
|
1989
|
39 |
11-12 |
p. 1105-1110
6 p.
|
artikel
|
| 37 |
New patent
|
|
|
1989
|
39 |
11-12 |
p. i-viii
nvt p.
|
artikel
|
| 38 |
Novel applications of ion implantation
|
Jeynes, C.
|
|
1989
|
39 |
11-12 |
p. 1047-1056
10 p.
|
artikel
|
| 39 |
Observation of swelling and sputtering of a silicon target under argon ion irradiation using a double marker technique
|
Jafri, ZH
|
|
1989
|
39 |
11-12 |
p. 1119-1121
3 p.
|
artikel
|
| 40 |
On mechanics of interaction concentrated low energy plasma-ion flows and radiation with biological tissues
|
|
|
1989
|
39 |
11-12 |
p. 1209-1210
2 p.
|
artikel
|
| 41 |
On the mechanism of sputtering of SiO2 by Ar at ion energies near the sputtering threshold
|
Todorov, SS
|
|
1989
|
39 |
11-12 |
p. 1101-1103
3 p.
|
artikel
|
| 42 |
Optical emission spectroscopy for analysis of broad ion beams
|
Heinrich, F.
|
|
1989
|
39 |
11-12 |
p. 1181-1184
4 p.
|
artikel
|
| 43 |
Oxygen ion source of duoplasmatron type
|
|
|
1989
|
39 |
11-12 |
p. 1211-
1 p.
|
artikel
|
| 44 |
Physical principles of low energy radiative-plasmo-dynamical sources and their use for applied research
|
|
|
1989
|
39 |
11-12 |
p. 1209-
1 p.
|
artikel
|
| 45 |
Preface
|
Wilson, Ian H
|
|
1989
|
39 |
11-12 |
p. 1023-
1 p.
|
artikel
|
| 46 |
Problems using the Sigmund formula for the calculation of sputtering yields
|
Webb, Roger P
|
|
1989
|
39 |
11-12 |
p. 1163-1165
3 p.
|
artikel
|
| 47 |
Radiation damage in Si and GaAs due to low energy ion bombardment
|
|
|
1989
|
39 |
11-12 |
p. 1208-
1 p.
|
artikel
|
| 48 |
Reactive ion beam etching studies of tungsten with CF4/argon mixtures using ion scattering spectroscopy and SIMS
|
Cox, TI
|
|
1989
|
39 |
11-12 |
p. 1171-1173
3 p.
|
artikel
|
| 49 |
Room temperature interaction of ionised nitrogen with cleaved GaAs
|
El Khalki, A
|
|
1989
|
39 |
11-12 |
p. 1131-1133
3 p.
|
artikel
|
| 50 |
Scanning tunneling microscopy of ion impacts on semiconductor surfaces
|
|
|
1989
|
39 |
11-12 |
p. 1212-
1 p.
|
artikel
|
| 51 |
Secondary ion mass spectrometry (SIMS) of silicon
|
Grasserbauer, M
|
|
1989
|
39 |
11-12 |
p. 1077-1087
11 p.
|
artikel
|
| 52 |
Study of low-energy hydrogen implantation in silicon
|
Srikanth, K
|
|
1989
|
39 |
11-12 |
p. 1057-1060
4 p.
|
artikel
|
| 53 |
Surface analysis using electron beam SNMS, applications and investigations of sputter yields
|
Wilson, R
|
|
1989
|
39 |
11-12 |
p. 1089-1093
5 p.
|
artikel
|
| 54 |
The computer modelling of SIMS sputter depth profiling and high fluence, low energy ion implantation using the IMPETUS code
|
|
|
1989
|
39 |
11-12 |
p. 1207-
1 p.
|
artikel
|
| 55 |
The development of ion implanter technology
|
Aitken, D
|
|
1989
|
39 |
11-12 |
p. 1025-1029
5 p.
|
artikel
|
| 56 |
The formation of various nickel-silicon compounds by ion beam mixing
|
|
|
1989
|
39 |
11-12 |
p. 1208-
1 p.
|
artikel
|
| 57 |
The numerical simulation of the extraction of ion beams from plasma and their dynamics in ionic-optical systems
|
|
|
1989
|
39 |
11-12 |
p. 1210-1211
2 p.
|
artikel
|
| 58 |
The role of implanted hydrogen in annihilation of radiation induced charges in Si3N4-SiO2-Si and ZnO-Si3N4-SiO2-Si structures
|
|
|
1989
|
39 |
11-12 |
p. 1210-
1 p.
|
artikel
|
| 59 |
The study of characteristics of low energy ion beam
|
|
|
1989
|
39 |
11-12 |
p. 1209-
1 p.
|
artikel
|
| 60 |
The use of Hall effect profiling to monitor the reactivation of silicon implants after oxygen implantation in gallium arsenide
|
Whitehead, NJ
|
|
1989
|
39 |
11-12 |
p. 1149-1151
3 p.
|
artikel
|
| 61 |
The use of micro-computers in the simulation of ion beam optics
|
Spädtke, Peter
|
|
1989
|
39 |
11-12 |
p. 1043-1046
4 p.
|
artikel
|
Tijdschrift beschrijving