| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Accessories increase leak detector's versatility
|
|
|
1989
|
39 |
10 |
p. 1012-
1 p.
|
artikel
|
| 2 |
A comparative study of silicon deposition from SiCl4 in cold plasma using argon, H2 or Ar+H2
|
|
|
1989
|
39 |
10 |
p. 980-
1 p.
|
artikel
|
| 3 |
A complete range of turbo control and power supplies
|
|
|
1989
|
39 |
10 |
p. 1013-
1 p.
|
artikel
|
| 4 |
Activities for the construction of a new Heidelberg proton microprobe
|
|
|
1989
|
39 |
10 |
p. 983-
1 p.
|
artikel
|
| 5 |
A generalized approach to vacuum system automation
|
|
|
1989
|
39 |
10 |
p. 972-
1 p.
|
artikel
|
| 6 |
A high ionization efficiency source for partially ionized beam deposition
|
|
|
1989
|
39 |
10 |
p. 983-
1 p.
|
artikel
|
| 7 |
A high-performance scanning tunneling microscope
|
|
|
1989
|
39 |
10 |
p. 1005-
1 p.
|
artikel
|
| 8 |
A model for reactive sputtering with magnetrons
|
Larsson, T.
|
|
1989
|
39 |
10 |
p. 949-954
6 p.
|
artikel
|
| 9 |
A Monte Carlo investigation of the runaway of H+ ions in helium
|
|
|
1989
|
39 |
10 |
p. 983-
1 p.
|
artikel
|
| 10 |
Amorphous phase formation in Ni3B by low-temperature deuterium implantation
|
|
|
1989
|
39 |
10 |
p. 986-
1 p.
|
artikel
|
| 11 |
Analysis of frequency responses for different rotor configurations of small turbomolecular pumps
|
|
|
1989
|
39 |
10 |
p. 970-
1 p.
|
artikel
|
| 12 |
Analysis of grain growth due to ion irradiation of thin films
|
|
|
1989
|
39 |
10 |
p. 995-
1 p.
|
artikel
|
| 13 |
An evaluation of the composition of the residual atmosphere above a commercial dry pump
|
|
|
1989
|
39 |
10 |
p. 970-
1 p.
|
artikel
|
| 14 |
A new symmetric scanning tunneling microscope design
|
|
|
1989
|
39 |
10 |
p. 1005-
1 p.
|
artikel
|
| 15 |
A new type of hollow cathode discharge gun used in ion beam coating apparatus and theory analysis
|
Shulin, Zhang
|
|
1989
|
39 |
10 |
p. 945-947
3 p.
|
artikel
|
| 16 |
A new ultrafine groove fabrication method utilizing electron cyclotron resonance plasma deposition and reactive ion etching
|
|
|
1989
|
39 |
10 |
p. 998-
1 p.
|
artikel
|
| 17 |
An impulsive collision model for the vibrational and rotational excitation of sputtered molecules
|
|
|
1989
|
39 |
10 |
p. 978-
1 p.
|
artikel
|
| 18 |
An in situ annealing study of lead implanted single crystal calcium titanate
|
|
|
1989
|
39 |
10 |
p. 988-
1 p.
|
artikel
|
| 19 |
Anisotropy of low-energy ion etching via electron cyclotron resonance plasma
|
|
|
1989
|
39 |
10 |
p. 997-
1 p.
|
artikel
|
| 20 |
Annealed Czochralski grown silicon crystals : a new material for the monochromatisation of synchrotron radiation and X-rays above 60 keV
|
|
|
1989
|
39 |
10 |
p. 1006-1007
2 p.
|
artikel
|
| 21 |
Annealing behavior of refractory metal multilayers on Si : the Mo/Ti and W/Ti systems
|
|
|
1989
|
39 |
10 |
p. 996-
1 p.
|
artikel
|
| 22 |
Annealing behavior of Si implanted InP
|
|
|
1989
|
39 |
10 |
p. 985-
1 p.
|
artikel
|
| 23 |
Annealing behaviour of extremely low energy beryllium implantation into Ga0.47In0.53As
|
|
|
1989
|
39 |
10 |
p. 986-
1 p.
|
artikel
|
| 24 |
Annoucements
|
|
|
1989
|
39 |
10 |
p. 1019-1020
2 p.
|
artikel
|
| 25 |
An 18O study of oxygen exchange phenomena during microwave-discharge plasma oxidation of silicon
|
|
|
1989
|
39 |
10 |
p. 1000-
1 p.
|
artikel
|
| 26 |
A novel heteroepitaxy method of Ge films on CaF2 by electron beam exposure
|
|
|
1989
|
39 |
10 |
p. 992-
1 p.
|
artikel
|
| 27 |
A phenomenological model for surface deposition kinetics during plasma and sputter deposition of amorphous hydrogenated silicon
|
|
|
1989
|
39 |
10 |
p. 978-
1 p.
|
artikel
|
| 28 |
A photoemission study of H2O adsorption on a vicinal Si(100) surface
|
|
|
1989
|
39 |
10 |
p. 971-
1 p.
|
artikel
|
| 29 |
A physical model for eliminating instabilities in reactive sputtering
|
|
|
1989
|
39 |
10 |
p. 977-
1 p.
|
artikel
|
| 30 |
Application of reflectance difference spectroscopy to molecular-beam epitaxy growth of GaAs and AlAs
|
|
|
1989
|
39 |
10 |
p. 1003-
1 p.
|
artikel
|
| 31 |
Application of the scanning tunneling microscope to insulating surfaces
|
|
|
1989
|
39 |
10 |
p. 1004-
1 p.
|
artikel
|
| 32 |
Applications of a high spatial resolution combined AES/SIMS instrument
|
Bishop, HE
|
|
1989
|
39 |
10 |
p. 929-939
11 p.
|
artikel
|
| 33 |
A rotating substrate holder for the production of uniform thin amorphous films and multilayer structures
|
Taylor, JSG
|
|
1989
|
39 |
10 |
p. 967-968
2 p.
|
artikel
|
| 34 |
A simple and novel technique for the deposition of conducting tin dioxide films
|
|
|
1989
|
39 |
10 |
p. 977-
1 p.
|
artikel
|
| 35 |
A solid state oxygen source for uhv
|
|
|
1989
|
39 |
10 |
p. 984-
1 p.
|
artikel
|
| 36 |
A source replenishment device for vacuum deposition
|
|
|
1989
|
39 |
10 |
p. 973-
1 p.
|
artikel
|
| 37 |
A study of the adhesion of vacuum-evaporated polyethylene films to aluminium
|
|
|
1989
|
39 |
10 |
p. 973-
1 p.
|
artikel
|
| 38 |
A time-of-flight quadrupole mass spectrometer system for measurements of thermal decomposition
|
|
|
1989
|
39 |
10 |
p. 971-
1 p.
|
artikel
|
| 39 |
A time resolved study of velocity distributions in pulsed molecular beams
|
|
|
1989
|
39 |
10 |
p. 983-
1 p.
|
artikel
|
| 40 |
Atomic beam scattering
|
|
|
1989
|
39 |
10 |
p. 1003-
1 p.
|
artikel
|
| 41 |
Auger electron spectroscopy : method for the accurate measurement of signal and noise and a figure of merit for the performance of AES instrument sensitivity
|
|
|
1989
|
39 |
10 |
p. 1003-
1 p.
|
artikel
|
| 42 |
Automatic leak detector and needs no liquid nitrogen
|
|
|
1989
|
39 |
10 |
p. 1014-
1 p.
|
artikel
|
| 43 |
A vacuum measurement system with Penning gauge for high voltage application
|
|
|
1989
|
39 |
10 |
p. 971-
1 p.
|
artikel
|
| 44 |
Balzers introduces all-in-one cryo preparation chamber
|
|
|
1989
|
39 |
10 |
p. 1014-
1 p.
|
artikel
|
| 45 |
Balzers publishes 1988 literature index
|
|
|
1989
|
39 |
10 |
p. 1018-
1 p.
|
artikel
|
| 46 |
Broad ion beam modeling for extraction optics optimization and etching process simulation
|
|
|
1989
|
39 |
10 |
p. 982-
1 p.
|
artikel
|
| 47 |
Buried layers of silicon oxy-nitride fabricated using ion beam synthesis
|
|
|
1989
|
39 |
10 |
p. 985-
1 p.
|
artikel
|
| 48 |
Channeling simulation in Ni3Al
|
|
|
1989
|
39 |
10 |
p. 1001-
1 p.
|
artikel
|
| 49 |
Characteristics of titanium arc evaporation processes
|
|
|
1989
|
39 |
10 |
p. 973-
1 p.
|
artikel
|
| 50 |
Characterization and thermal desorption spectroscopy study on a new, low outgassing material surface for improved ultrahigh vacuum uses
|
|
|
1989
|
39 |
10 |
p. 972-
1 p.
|
artikel
|
| 51 |
Characterization of a saddle field fast atom beam source
|
|
|
1989
|
39 |
10 |
p. 984-
1 p.
|
artikel
|
| 52 |
Characterization of cosputtered tungsten carbide thin films
|
|
|
1989
|
39 |
10 |
p. 975-
1 p.
|
artikel
|
| 53 |
Characterization of H+ ion irradiated silicon carbides
|
|
|
1989
|
39 |
10 |
p. 988-
1 p.
|
artikel
|
| 54 |
Characterization of molecular-beam epitaxially grown CdTe surfaces by high-energy electron diffraction and synchrotron radiation photo-emission spectroscopy
|
|
|
1989
|
39 |
10 |
p. 989-
1 p.
|
artikel
|
| 55 |
Characterization of PECVD deposited silicon oxynitride thin films
|
|
|
1989
|
39 |
10 |
p. 981-
1 p.
|
artikel
|
| 56 |
Characterization of SrF2 thin films and of SrF2/InP structures
|
|
|
1989
|
39 |
10 |
p. 1002-
1 p.
|
artikel
|
| 57 |
Characterization of the silicon-on-insulator material formed by high-dose oxygen implantation using spectroscopic ellipsometry
|
|
|
1989
|
39 |
10 |
p. 1000-
1 p.
|
artikel
|
| 58 |
Charge transfer adsorption in silicon vapor-phase epitaxial growth
|
|
|
1989
|
39 |
10 |
p. 991-
1 p.
|
artikel
|
| 59 |
Charge-transfer dipole moments at the Si-SiO2 interface
|
|
|
1989
|
39 |
10 |
p. 996-
1 p.
|
artikel
|
| 60 |
Chemically enhanced ion etching on refractory metal silicides
|
|
|
1989
|
39 |
10 |
p. 997-
1 p.
|
artikel
|
| 61 |
Chemical reactions at the Si/GaAs(110) and Si/InP(110) interfaces : effects on valence-band discontinuity measurements
|
|
|
1989
|
39 |
10 |
p. 993-
1 p.
|
artikel
|
| 62 |
Coherent meson production relativistic heavy-ion collision
|
|
|
1989
|
39 |
10 |
p. 1000-
1 p.
|
artikel
|
| 63 |
Concentric tube scanning tunneling microscope
|
|
|
1989
|
39 |
10 |
p. 1004-
1 p.
|
artikel
|
| 64 |
Controlled etching of silicate glasses by pulsed ultraviolet laser radiation
|
|
|
1989
|
39 |
10 |
p. 998-
1 p.
|
artikel
|
| 65 |
Control of microstructure and properties of copper films using ion-assited deposition
|
|
|
1989
|
39 |
10 |
p. 980-
1 p.
|
artikel
|
| 66 |
Cosputtered W75C25 thin film diffusion barriers
|
|
|
1989
|
39 |
10 |
p. 977-
1 p.
|
artikel
|
| 67 |
Cross-sectional transmission electron microscope study of intrinsic solid-phase epitaxial growth in self-ion-implanted (001) Si
|
|
|
1989
|
39 |
10 |
p. 986-
1 p.
|
artikel
|
| 68 |
Cryo-Torr product folder
|
|
|
1989
|
39 |
10 |
p. 1012-
1 p.
|
artikel
|
| 69 |
Crystallization of SiO by HE+ bombardment
|
|
|
1989
|
39 |
10 |
p. 992-
1 p.
|
artikel
|
| 70 |
Current-voltage relations in magnetrons
|
|
|
1989
|
39 |
10 |
p. 976-
1 p.
|
artikel
|
| 71 |
Defects in SiO2 in buried-oxide structures formed by O+ implantation
|
|
|
1989
|
39 |
10 |
p. 985-
1 p.
|
artikel
|
| 72 |
Density of ZnS thin films grown by atomic layer epitaxy
|
|
|
1989
|
39 |
10 |
p. 992-
1 p.
|
artikel
|
| 73 |
Dependence of microstructure of TiN coatings on their thickness
|
|
|
1989
|
39 |
10 |
p. 1006-
1 p.
|
artikel
|
| 74 |
Deposition of device quality silicon dioxide thin films by remote plasma enhanced chemical vapor deposition
|
|
|
1989
|
39 |
10 |
p. 981-
1 p.
|
artikel
|
| 75 |
Deposition of hard carbon films by the r.f. glow discharge method
|
|
|
1989
|
39 |
10 |
p. 982-
1 p.
|
artikel
|
| 76 |
Deposition of TiB2 films by a co-sputtering method
|
|
|
1989
|
39 |
10 |
p. 974-
1 p.
|
artikel
|
| 77 |
Deposition of vanadium oxide films by direct-current magnetron reactive sputtering
|
|
|
1989
|
39 |
10 |
p. 977-
1 p.
|
artikel
|
| 78 |
Deposition techniques for the preparation of thin film nuclear targets
|
|
|
1989
|
39 |
10 |
p. 973-
1 p.
|
artikel
|
| 79 |
Depth of origin of sputtered atoms: experimental and theoretical study of Cu/Ru(0001)
|
|
|
1989
|
39 |
10 |
p. 975-
1 p.
|
artikel
|
| 80 |
Design and performance of an UHV beamline to produce low and hyperthermal energy ion beams
|
|
|
1989
|
39 |
10 |
p. 983-
1 p.
|
artikel
|
| 81 |
Diamond crystal growth by plasma chemical vapor deposition
|
|
|
1989
|
39 |
10 |
p. 980-
1 p.
|
artikel
|
| 82 |
Diamond films by ion-assisted deposition at room temperature
|
|
|
1989
|
39 |
10 |
p. 980-
1 p.
|
artikel
|
| 83 |
Diffusion model for Ohmic contacts to GaAs
|
|
|
1989
|
39 |
10 |
p. 993-
1 p.
|
artikel
|
| 84 |
Diffusion of boron, phosphorus and arsenic implanted in thin films of cobalt disilicide
|
|
|
1989
|
39 |
10 |
p. 995-
1 p.
|
artikel
|
| 85 |
Diffusion of Cu into rf-sputtered iron oxide films
|
|
|
1989
|
39 |
10 |
p. 976-
1 p.
|
artikel
|
| 86 |
Displacement damage in LiNbO3
|
|
|
1989
|
39 |
10 |
p. 986-
1 p.
|
artikel
|
| 87 |
Distribution of energy in polymers due to incident electrons and protons
|
|
|
1989
|
39 |
10 |
p. 1001-
1 p.
|
artikel
|
| 88 |
Editorial: Software survey section
|
|
|
1989
|
39 |
10 |
p. ix-x
nvt p.
|
artikel
|
| 89 |
Edwards news no 17
|
|
|
1989
|
39 |
10 |
p. 1019-
1 p.
|
artikel
|
| 90 |
Effect of grain size on the oxidation kinetics of sputtered titanium nitride films
|
|
|
1989
|
39 |
10 |
p. 977-
1 p.
|
artikel
|
| 91 |
Effect of mixing ions on the formation process of β-SiC fabricated by ion beam mixing
|
|
|
1989
|
39 |
10 |
p. 994-
1 p.
|
artikel
|
| 92 |
Effect of resputtering on composition of WSix films deposited by multilayer sputtering
|
|
|
1989
|
39 |
10 |
p. 976-
1 p.
|
artikel
|
| 93 |
Effects of dry etching on the electrical properties of silicon
|
|
|
1989
|
39 |
10 |
p. 998-
1 p.
|
artikel
|
| 94 |
Effects of energy straggling on surface analysis with fast ion beams
|
|
|
1989
|
39 |
10 |
p. 1001-
1 p.
|
artikel
|
| 95 |
Effects of ion implantation on poly(dimethylsilylene-co-methyl-phenylsyilylene
|
|
|
1989
|
39 |
10 |
p. 986-
1 p.
|
artikel
|
| 96 |
Effects of plasma stripping on the oxidation states of aluminum-silicon and tungsten surfaces
|
|
|
1989
|
39 |
10 |
p. 997-
1 p.
|
artikel
|
| 97 |
Electrical and optical properties of indium tin oxide thin films prepared on low-temperature substrates by rf magnetron sputtering under an applied external magnetic field
|
|
|
1989
|
39 |
10 |
p. 978-
1 p.
|
artikel
|
| 98 |
Electrical damage induced by ion beam etching of GaAs
|
|
|
1989
|
39 |
10 |
p. 997-
1 p.
|
artikel
|
| 99 |
Electric-field-assisted deposition of optical coatings
|
|
|
1989
|
39 |
10 |
p. 981-
1 p.
|
artikel
|
| 100 |
Electron-beam lithography system using a quadrupole triplet
|
|
|
1989
|
39 |
10 |
p. 998-
1 p.
|
artikel
|
| 101 |
Electron emission from electroformed carbon films
|
|
|
1989
|
39 |
10 |
p. 1002-
1 p.
|
artikel
|
| 102 |
Electron energy distributions in oxygen microwave plasmas
|
|
|
1989
|
39 |
10 |
p. 999-
1 p.
|
artikel
|
| 103 |
Electronic transitions in surface and near-surface radiation effects
|
|
|
1989
|
39 |
10 |
p. 984-
1 p.
|
artikel
|
| 104 |
Energy dependence of concentration of implants and its chemical consequences
|
|
|
1989
|
39 |
10 |
p. 984-
1 p.
|
artikel
|
| 105 |
Energy distributions of molecular gas ions generated in a special glow-discharge source
|
Wroński, Z
|
|
1989
|
39 |
10 |
p. 941-944
4 p.
|
artikel
|
| 106 |
Epitaxial growth and X-ray structural characterization of Zn1−x
Fe
x
Se films on GaAs(001)
|
|
|
1989
|
39 |
10 |
p. 991-
1 p.
|
artikel
|
| 107 |
Epitaxial silicon reactor technology—a review
|
|
|
1989
|
39 |
10 |
p. 989-
1 p.
|
artikel
|
| 108 |
Etching on polar (111) surfaces of CdTe crystals studied with Auger electron spectroscopy
|
|
|
1989
|
39 |
10 |
p. 1004-
1 p.
|
artikel
|
| 109 |
Evidence of implantation doping in polyacetylene
|
|
|
1989
|
39 |
10 |
p. 985-
1 p.
|
artikel
|
| 110 |
Extension of thermocouple gauge sensitivity to atmospheric pressure
|
|
|
1989
|
39 |
10 |
p. 971-
1 p.
|
artikel
|
| 111 |
Fluctuations during JET discharges with H-mode
|
|
|
1989
|
39 |
10 |
p. 999-
1 p.
|
artikel
|
| 112 |
Focusing protons and light ions to micron and submicron dimensions
|
|
|
1989
|
39 |
10 |
p. 984-
1 p.
|
artikel
|
| 113 |
Formation and thermal stability of amorphous CuZr thin films deposited by coevaporation
|
|
|
1989
|
39 |
10 |
p. 974-
1 p.
|
artikel
|
| 114 |
Formation of buried nitride layers by ion implantation
|
|
|
1989
|
39 |
10 |
p. 984-
1 p.
|
artikel
|
| 115 |
Formation of paramagnetic defects in high-purity silica by high-energy ions
|
|
|
1989
|
39 |
10 |
p. 988-
1 p.
|
artikel
|
| 116 |
Formation of some hierarchy in amorphous structure during the crystallization of vacuum-deposited amorphous semiconductor films
|
|
|
1989
|
39 |
10 |
p. 974-
1 p.
|
artikel
|
| 117 |
Fundamental irradiation processes relevant to plasma-surface technology
|
|
|
1989
|
39 |
10 |
p. 979-
1 p.
|
artikel
|
| 118 |
GaAs surface cleaning by thermal oxidation and sublimation in molecular-beam epitaxy
|
|
|
1989
|
39 |
10 |
p. 991-
1 p.
|
artikel
|
| 119 |
Ga0.5In0.5P/GaAs interfaces by organometallic vapor-phase epitaxy
|
|
|
1989
|
39 |
10 |
p. 992-
1 p.
|
artikel
|
| 120 |
GaP/Si heteroepitaxy by complex ion beam sputtering
|
|
|
1989
|
39 |
10 |
p. 993-
1 p.
|
artikel
|
| 121 |
Geometrical and surface effects in the sputtering process
|
|
|
1989
|
39 |
10 |
p. 975-
1 p.
|
artikel
|
| 122 |
Graham Kinney pumps for Saudi
|
|
|
1989
|
39 |
10 |
p. 1015-
1 p.
|
artikel
|
| 123 |
Grazing X-ray reflectometry and Rutherford backscattering : two complementary techniques for the study of thin film mixing
|
|
|
1989
|
39 |
10 |
p. 1002-
1 p.
|
artikel
|
| 124 |
Growth and characterization of AlGaInAs lattice matched to InP grown by molecular-beam epitaxy
|
|
|
1989
|
39 |
10 |
p. 991-
1 p.
|
artikel
|
| 125 |
Growth and characterization of Si1−x
Ge
x
and Ge epilayers on (100) Si
|
|
|
1989
|
39 |
10 |
p. 991-
1 p.
|
artikel
|
| 126 |
Growth and properties of doped CdTe films grown by photoassisted molecular-beam epitaxy
|
|
|
1989
|
39 |
10 |
p. 989-
1 p.
|
artikel
|
| 127 |
Growth and structure of chemical vapor deposited silicon carbide from methyltrichlorosilane and hydrogen in the temperature range of 1100 to 1400°C
|
|
|
1989
|
39 |
10 |
p. 991-
1 p.
|
artikel
|
| 128 |
Growth, atomic structure, and oxidation of chromium overlayers on W(110)
|
|
|
1989
|
39 |
10 |
p. 974-
1 p.
|
artikel
|
| 129 |
Growth dynamics of aluminum nitride and aluminum oxide thin films synthesized by ion-assisted deposition
|
|
|
1989
|
39 |
10 |
p. 980-
1 p.
|
artikel
|
| 130 |
Growth kinetics and step density in reflection high-energy electron diffraction during molecular-beam epitaxy
|
|
|
1989
|
39 |
10 |
p. 993-
1 p.
|
artikel
|
| 131 |
Growth of Al and Al nitride films in N2−Ne and N2−(Ne+Ar) discharges: construction of a ternary gas phase diagram
|
|
|
1989
|
39 |
10 |
p. 982-
1 p.
|
artikel
|
| 132 |
Growth of epitaxial CaSi2 films on Si(111)
|
|
|
1989
|
39 |
10 |
p. 989-
1 p.
|
artikel
|
| 133 |
Growth processes in amorphous metallic films: a computer simulation
|
|
|
1989
|
39 |
10 |
p. 974-
1 p.
|
artikel
|
| 134 |
Hard coatings
|
Bunshah, RF
|
|
1989
|
39 |
10 |
p. 955-965
11 p.
|
artikel
|
| 135 |
Helium diffraction from (2 x n) structures on Si(001)
|
|
|
1989
|
39 |
10 |
p. 1003-
1 p.
|
artikel
|
| 136 |
High dose uranium ion implantation into silicon
|
|
|
1989
|
39 |
10 |
p. 987-
1 p.
|
artikel
|
| 137 |
High performance hoses and ‘O’-rings from safelab
|
|
|
1989
|
39 |
10 |
p. 1010-
1 p.
|
artikel
|
| 138 |
High performance SIMS
|
|
|
1989
|
39 |
10 |
p. 1011-
1 p.
|
artikel
|
| 139 |
High-precision reticle making by electron-beam lithography
|
|
|
1989
|
39 |
10 |
p. 998-
1 p.
|
artikel
|
| 140 |
High temperatures stability of plasma-enhanced chemically vapour deposited titanium silicide due to two-step rapid thermal annealing
|
|
|
1989
|
39 |
10 |
p. 981-
1 p.
|
artikel
|
| 141 |
Hollow-anode discharge with axial-magnetic field as an electron beam source
|
|
|
1989
|
39 |
10 |
p. 984-
1 p.
|
artikel
|
| 142 |
Image charge focusing of relativistic electron beams
|
|
|
1989
|
39 |
10 |
p. 1004-
1 p.
|
artikel
|
| 143 |
Improved adhesion of solid lubricating films with ion-beam mixing
|
|
|
1989
|
39 |
10 |
p. 979-
1 p.
|
artikel
|
| 144 |
Improvements to and characterization of GaInAs/AlInAs hetero-interfaces grown by molecular-beam epitaxy
|
|
|
1989
|
39 |
10 |
p. 990-
1 p.
|
artikel
|
| 145 |
Inert gas entrapment in films produced by ion-assisted physical vapour deposition processes
|
|
|
1989
|
39 |
10 |
p. 981-
1 p.
|
artikel
|
| 146 |
Influence of boron related defects on activation of silicon implanted into undoped semi-insulating GaAs
|
|
|
1989
|
39 |
10 |
p. 987-
1 p.
|
artikel
|
| 147 |
Influence of deposition parameters on the properties of boron-doped amorphous silicon-carbide films
|
|
|
1989
|
39 |
10 |
p. 980-
1 p.
|
artikel
|
| 148 |
Influence of deposition rate on properties of reactively sputtered TiNx films
|
|
|
1989
|
39 |
10 |
p. 976-
1 p.
|
artikel
|
| 149 |
Influence of substrate misorientation on defect and impurity incorporation in GaAs/AlGaAs heterostructures grown by molecular-beam epitaxy
|
|
|
1989
|
39 |
10 |
p. 990-
1 p.
|
artikel
|
| 150 |
In situ investigation of TiN formation on top of TiSi2
|
|
|
1989
|
39 |
10 |
p. 977-
1 p.
|
artikel
|
| 151 |
Integrated thermal vacuum sensor with extended range
|
|
|
1989
|
39 |
10 |
p. 969-
1 p.
|
artikel
|
| 152 |
Interactions between interstitial atoms in silicon : arsenic-argon-boron and boron-argon-phosphorus
|
|
|
1989
|
39 |
10 |
p. 995-
1 p.
|
artikel
|
| 153 |
Interdiffusion and structural relaxation in Mo/Si multilayer films
|
|
|
1989
|
39 |
10 |
p. 995-
1 p.
|
artikel
|
| 154 |
Interfacial reactions in the Ti/GaAs system
|
|
|
1989
|
39 |
10 |
p. 993-
1 p.
|
artikel
|
| 155 |
Intermixing of Co/Gd
x
O
y
thin films on Kapton polyimide
|
|
|
1989
|
39 |
10 |
p. 994-
1 p.
|
artikel
|
| 156 |
Investigation of cosputtered W-C thin films as diffusion barriers
|
|
|
1989
|
39 |
10 |
p. 976-
1 p.
|
artikel
|
| 157 |
Investigation of the void structure in amorphous germanium thin films as a function of low-energy ion bombardment
|
|
|
1989
|
39 |
10 |
p. 980-
1 p.
|
artikel
|
| 158 |
Ion beam bombardment effects during film deposition
|
|
|
1989
|
39 |
10 |
p. 979-
1 p.
|
artikel
|
| 159 |
Ion beam mixing of GaAs with films of Al, Si and their nitrides
|
|
|
1989
|
39 |
10 |
p. 996-
1 p.
|
artikel
|
| 160 |
Ion beam self-sputtering using a cathodic arc ion source
|
|
|
1989
|
39 |
10 |
p. 975-
1 p.
|
artikel
|
| 161 |
Ion emission from plasma-focus facilities
|
|
|
1989
|
39 |
10 |
p. 999-
1 p.
|
artikel
|
| 162 |
Ion implantation, a method for fabricating light guides in polymers
|
|
|
1989
|
39 |
10 |
p. 987-
1 p.
|
artikel
|
| 163 |
Ion implantation and annealing of crystalline oxides and ceramic materials
|
|
|
1989
|
39 |
10 |
p. 988-
1 p.
|
artikel
|
| 164 |
Ion implanters: chemical and radiation safety
|
|
|
1989
|
39 |
10 |
p. 982-
1 p.
|
artikel
|
| 165 |
Ion-induced mixing at Nb/Fe2O3 interface studied by CEMS technique
|
|
|
1989
|
39 |
10 |
p. 995-
1 p.
|
artikel
|
| 166 |
Ionizing beam-induced adhesion enhancement and interface chemistry for AuGaAs
|
|
|
1989
|
39 |
10 |
p. 979-
1 p.
|
artikel
|
| 167 |
Ion microscopy using magnifying ion transport systems and position sensitive detectors
|
|
|
1989
|
39 |
10 |
p. 1002-
1 p.
|
artikel
|
| 168 |
Ion mixing and thermochemical properties of tracers in Ag
|
|
|
1989
|
39 |
10 |
p. 996-
1 p.
|
artikel
|
| 169 |
Ion mixing of Al2O3 and Al films on SiO2
|
|
|
1989
|
39 |
10 |
p. 994-
1 p.
|
artikel
|
| 170 |
Ion sputtering yield measurements for submicrometer thin films
|
|
|
1989
|
39 |
10 |
p. 975-
1 p.
|
artikel
|
| 171 |
Issues in molecular-beam epitaxy kinetics of compound semiconductor based heterostructures
|
|
|
1989
|
39 |
10 |
p. 991-
1 p.
|
artikel
|
| 172 |
Jacques Friedel to receive 1988 Von Hippel award of Materials Research Society
|
|
|
1989
|
39 |
10 |
p. 1019-
1 p.
|
artikel
|
| 173 |
Kinetics and mechanism of reaction at room temperature in thin Au/metal couples
|
|
|
1989
|
39 |
10 |
p. 994-
1 p.
|
artikel
|
| 174 |
Kinetics of growth coalescence of In/GaAs
|
|
|
1989
|
39 |
10 |
p. 973-
1 p.
|
artikel
|
| 175 |
Large grain polycrystalline silicon by low-temperature annealing of low-pressure chemical vapor deposited amorphous silicon films
|
|
|
1989
|
39 |
10 |
p. 992-
1 p.
|
artikel
|
| 176 |
Lattice site occupation of compound forming elements implanted into aluminium
|
|
|
1989
|
39 |
10 |
p. 989-
1 p.
|
artikel
|
| 177 |
Light-enhanced molecular-beam epitaxial growth in II–VI and III–V compound semiconductors
|
|
|
1989
|
39 |
10 |
p. 989-
1 p.
|
artikel
|
| 178 |
Localized epitaxial growth of IrSi3 on (111) and (001) silicon
|
|
|
1989
|
39 |
10 |
p. 992-
1 p.
|
artikel
|
| 179 |
Low-energy electronic stopping for boron in beryllium
|
|
|
1989
|
39 |
10 |
p. 1001-
1 p.
|
artikel
|
| 180 |
Low-energy neutral/ion backscattering at As/Si(001)
|
|
|
1989
|
39 |
10 |
p. 1006-
1 p.
|
artikel
|
| 181 |
Low power, 3.2-cm, efficient microwave electron cyclotron resonant ion source
|
|
|
1989
|
39 |
10 |
p. 984-
1 p.
|
artikel
|
| 182 |
Low-temperature annealing of As-implanted Ge
|
|
|
1989
|
39 |
10 |
p. 991-
1 p.
|
artikel
|
| 183 |
Low-temperature atomic force microscopy
|
|
|
1989
|
39 |
10 |
p. 1004-
1 p.
|
artikel
|
| 184 |
Low temperature growth of AIN and Al2O3 films by the simultaneous use of a microwave ion source and an ionized cluster beam system Hiroshi Takaoka et al,
Thin Solid Films,
157, 1988, 143–158
|
|
|
1989
|
39 |
10 |
p. 981-
1 p.
|
artikel
|
| 185 |
Lubricating of mechanisms for vacuum service
|
|
|
1989
|
39 |
10 |
p. 972-
1 p.
|
artikel
|
| 186 |
Magnetic field gradient effects on ion energy for electron cyclotron resonance microwave plasma stream
|
|
|
1989
|
39 |
10 |
p. 1000-
1 p.
|
artikel
|
| 187 |
Magnetron plasma diagnostics and processing implications
|
|
|
1989
|
39 |
10 |
p. 1000-
1 p.
|
artikel
|
| 188 |
Magnetron-plasma ion beam etching : a new dry etching technique
|
|
|
1989
|
39 |
10 |
p. 997-
1 p.
|
artikel
|
| 189 |
Measurement of the electronic stopping power of gold for protons in a large solid angle transmission geometry
|
|
|
1989
|
39 |
10 |
p. 1001-
1 p.
|
artikel
|
| 190 |
Mechanisms of contaminant particle production, migration, and adhesion
|
|
|
1989
|
39 |
10 |
p. 979-
1 p.
|
artikel
|
| 191 |
Medium-energy ion scattering studies of relaxation at metal surfaces
|
|
|
1989
|
39 |
10 |
p. 1003-
1 p.
|
artikel
|
| 192 |
Medium resolution atmospheric pressure ionization mass spectrometer
|
|
|
1989
|
39 |
10 |
p. 971-
1 p.
|
artikel
|
| 193 |
Metal/semiconductor interfaces on SnO2(110)
|
|
|
1989
|
39 |
10 |
p. 993-
1 p.
|
artikel
|
| 194 |
Metastable bismuth-iron alloy films synthesized with ion mixing and magnetron copsuttering
|
|
|
1989
|
39 |
10 |
p. 996-
1 p.
|
artikel
|
| 195 |
Methods of surface analysis (techniques and applications)
|
Steckelmacher, W.
|
|
1989
|
39 |
10 |
p. 1021-
1 p.
|
artikel
|
| 196 |
Microbeam line with 1.5 MeV helium ions and protons at Osaka
|
|
|
1989
|
39 |
10 |
p. 982-
1 p.
|
artikel
|
| 197 |
Microstructural characterization of nitrogen implanted 440C steel
|
|
|
1989
|
39 |
10 |
p. 988-
1 p.
|
artikel
|
| 198 |
Mixing of Pt-René N4 alloy under Pt+ bombardment
|
|
|
1989
|
39 |
10 |
p. 995-
1 p.
|
artikel
|
| 199 |
Model calculation for the tunnel current from a tungsten tip to a Ni(100) surface with a chemisorbed oxygen atom
|
|
|
1989
|
39 |
10 |
p. 971-
1 p.
|
artikel
|
| 200 |
Molecular-beam epitaxial growth and characterization of pseudomorphic InAs/In0.52Al0.48As quantum wells
|
|
|
1989
|
39 |
10 |
p. 990-
1 p.
|
artikel
|
| 201 |
Molecular-beam epitaxy growth of GaAs/InAs structures on (001)InP by alternating III/V fluxes
|
|
|
1989
|
39 |
10 |
p. 990-
1 p.
|
artikel
|
| 202 |
Molecular flow in complex vacuum systems
|
Steckelmacher, W.
|
|
1989
|
39 |
10 |
p. 1022-
1 p.
|
artikel
|
| 203 |
Molecular stream epitaxy and the role of the boundary layer in chemical vapor deposition
|
|
|
1989
|
39 |
10 |
p. 990-
1 p.
|
artikel
|
| 204 |
Molecular structure evolution under krypton ion irradiation of an electropolymerised polyacrylonitrile film
|
|
|
1989
|
39 |
10 |
p. 985-
1 p.
|
artikel
|
| 205 |
Monte Carlo simulation of ion transport through rf glow-discharge sheaths
|
|
|
1989
|
39 |
10 |
p. 999-
1 p.
|
artikel
|
| 206 |
Morphology and structure of gold silver and copper layers obtained by sputtering during ion bombardment of targets from these metals
|
|
|
1989
|
39 |
10 |
p. 981-
1 p.
|
artikel
|
| 207 |
Multipole lenses and their application in nuclear microprobe lens systems
|
|
|
1989
|
39 |
10 |
p. 984-
1 p.
|
artikel
|
| 208 |
Narrowband filters for precision monochromatic light sources
|
|
|
1989
|
39 |
10 |
p. 1009-
1 p.
|
artikel
|
| 209 |
New Cambridge headquarters for Torvac and Wentgate
|
|
|
1989
|
39 |
10 |
p. 1015-
1 p.
|
artikel
|
| 210 |
New Graham Kinney technical brochure
|
|
|
1989
|
39 |
10 |
p. 1015-
1 p.
|
artikel
|
| 211 |
New microwave ion source for multiply charged ion beam production
|
|
|
1989
|
39 |
10 |
p. 982-
1 p.
|
artikel
|
| 212 |
New MKS flowmeter calibration system
|
|
|
1989
|
39 |
10 |
p. 1009-
1 p.
|
artikel
|
| 213 |
New patent
|
|
|
1989
|
39 |
10 |
p. i-vi
nvt p.
|
artikel
|
| 214 |
New Pirani gauge from MKS
|
|
|
1989
|
39 |
10 |
p. 1009-
1 p.
|
artikel
|
| 215 |
New Pirani vacuum sensor has integral transmitter
|
|
|
1989
|
39 |
10 |
p. 1013-1014
2 p.
|
artikel
|
| 216 |
News for users of high vacuum systems—vacuum leadthoughs now on ISO standard flanges
|
|
|
1989
|
39 |
10 |
p. 1012-1013
2 p.
|
artikel
|
| 217 |
Nondiffusive velocity broadening in ion energy analyzer operation
|
|
|
1989
|
39 |
10 |
p. 1000-
1 p.
|
artikel
|
| 218 |
Novel approach for particle velocity and size measurement under plasma conditions
|
|
|
1989
|
39 |
10 |
p. 1000-
1 p.
|
artikel
|
| 219 |
Novel microstructures for the in situ measurement of mechanical properties of thin films
|
|
|
1989
|
39 |
10 |
p. 979-
1 p.
|
artikel
|
| 220 |
Observation of microfabricated patterns by scanning tunneling microscopy
|
|
|
1989
|
39 |
10 |
p. 1005-
1 p.
|
artikel
|
| 221 |
On-line measurement of the spatial dose uniformity in ion implantation processes
|
|
|
1989
|
39 |
10 |
p. 987-
1 p.
|
artikel
|
| 222 |
On the calculation of the overall transmission probability of a variable blade length multiple-stage turbomolecular pump
|
|
|
1989
|
39 |
10 |
p. 969-
1 p.
|
artikel
|
| 223 |
On the energy distribution of doubly charged atomic ions emitted from liquid metal ion sources
|
|
|
1989
|
39 |
10 |
p. 983-
1 p.
|
artikel
|
| 224 |
On the properties of physically vapour-deposited TiAlVN coatings
|
|
|
1989
|
39 |
10 |
p. 973-
1 p.
|
artikel
|
| 225 |
O+, O+
2, O+
3 and O+
4 ions in Ar-O2 sputtering discharges : comments on “Oxidation mechanism in rf CO2 plasma”, Vacuum, 36, 85 (1986)
|
|
|
1989
|
39 |
10 |
p. 999-
1 p.
|
artikel
|
| 226 |
Optical and structural characteristics of Al2O3 films deposited by the reactive ionized cluster beam method
|
|
|
1989
|
39 |
10 |
p. 991-
1 p.
|
artikel
|
| 227 |
Optical investigations of ion implant damage in silicon
|
|
|
1989
|
39 |
10 |
p. 987-
1 p.
|
artikel
|
| 228 |
Optically absorbing layers on ion beam modified polymers: a study of their evolution and properties
|
|
|
1989
|
39 |
10 |
p. 984-
1 p.
|
artikel
|
| 229 |
Optical properties of molecular beam epitaxially grown GaAs1−x
Sb
x
(0 < x < 0.5) on GaAs and InP substrates
|
|
|
1989
|
39 |
10 |
p. 990-
1 p.
|
artikel
|
| 230 |
Optimisation of the properties of a microfocused ion beam system
|
|
|
1989
|
39 |
10 |
p. 982-
1 p.
|
artikel
|
| 231 |
Organometallic chemical vapor phase deposition of “Mn2Si”
|
|
|
1989
|
39 |
10 |
p. 1002-
1 p.
|
artikel
|
| 232 |
Oscillating vane for measuring speed of gas flow
|
|
|
1989
|
39 |
10 |
p. 970-
1 p.
|
artikel
|
| 233 |
Oxford applied research ‘new review’ winter
|
|
|
1989
|
39 |
10 |
p. 1019-
1 p.
|
artikel
|
| 234 |
Phenomena produced by ion bombardment in plasma-assisted etching environments
|
|
|
1989
|
39 |
10 |
p. 999-
1 p.
|
artikel
|
| 235 |
Photoluminescence spectra of highly doped Al
x
Ga1−x
As grown by molecular-beam epitaxy
|
|
|
1989
|
39 |
10 |
p. 992-
1 p.
|
artikel
|
| 236 |
Photoreflectance study of boron ion-implanted {100} CdTe
|
|
|
1989
|
39 |
10 |
p. 986-
1 p.
|
artikel
|
| 237 |
Physics at surfaces
|
Steckelmacher, W.
|
|
1989
|
39 |
10 |
p. 1021-1022
2 p.
|
artikel
|
| 238 |
Plasma-assisted etching of tungsten films : a quartz-crystal micro-balance study
|
|
|
1989
|
39 |
10 |
p. 998-
1 p.
|
artikel
|
| 239 |
Plasma deposition of amorphous hydrogenated carbon films on III–V semiconductors
|
|
|
1989
|
39 |
10 |
p. 981-
1 p.
|
artikel
|
| 240 |
Plasma enhanced chemical vapor deposition of polycrystalline diamond and diamondlike films
|
|
|
1989
|
39 |
10 |
p. 979-
1 p.
|
artikel
|
| 241 |
Plasma etching with a microwave cavity plasma disk source
|
|
|
1989
|
39 |
10 |
p. 997-
1 p.
|
artikel
|
| 242 |
Plasma oscillation modes in a low-pressure plane positive column
|
|
|
1989
|
39 |
10 |
p. 999-
1 p.
|
artikel
|
| 243 |
Plasma polymerized thin films containing small silver particles
|
|
|
1989
|
39 |
10 |
p. 979-
1 p.
|
artikel
|
| 244 |
Platinum silicide contact to arsenic-doped polycrystalline silicon
|
|
|
1989
|
39 |
10 |
p. 995-
1 p.
|
artikel
|
| 245 |
Preparation and characteristics of ZnS thin films by intense pulsed ion beam
|
|
|
1989
|
39 |
10 |
p. 989-
1 p.
|
artikel
|
| 246 |
Preparation properties and applications of boron nitride thin films
|
|
|
1989
|
39 |
10 |
p. 975-
1 p.
|
artikel
|
| 247 |
Pressure stability in reactive magnetron sputtering
|
|
|
1989
|
39 |
10 |
p. 974-
1 p.
|
artikel
|
| 248 |
Primary vacuum pumps for the fusion reactor fuel cycle
|
|
|
1989
|
39 |
10 |
p. 969-
1 p.
|
artikel
|
| 249 |
Properties of AIN films deposited on N-implanted Al
|
|
|
1989
|
39 |
10 |
p. 988-
1 p.
|
artikel
|
| 250 |
Properties of hard tungsten films prepared by sputtering
|
|
|
1989
|
39 |
10 |
p. 977-
1 p.
|
artikel
|
| 251 |
Properties of ion-beam-sputtered Ni/Fe artificial lattice film
|
|
|
1989
|
39 |
10 |
p. 977-
1 p.
|
artikel
|
| 252 |
Properties of polycrystalline silicon grown on insulating subtrates by electron beam gun evaporation
|
|
|
1989
|
39 |
10 |
p. 972-
1 p.
|
artikel
|
| 253 |
Proposal for a sensitive leak test telescope
|
|
|
1989
|
39 |
10 |
p. 970-
1 p.
|
artikel
|
| 254 |
Pumping mechanism for N2 gas in a triode ion pump with A1100 aluminum cathode
|
|
|
1989
|
39 |
10 |
p. 969-
1 p.
|
artikel
|
| 255 |
Quantitative analysis and depth profiling of rare gases in solids by secondary-ion mass spectrometry : detection of (CsR)+ molecular ions (R = rare gas)
|
|
|
1989
|
39 |
10 |
p. 1002-
1 p.
|
artikel
|
| 256 |
Quantitative analysis of channeling data for the determination of the amorphous fraction in ion bombarded single crystals
|
|
|
1989
|
39 |
10 |
p. 1001-
1 p.
|
artikel
|
| 257 |
Quantitative measurements with quadrupole mass spectrometers: important specifications for reliable measurements
|
|
|
1989
|
39 |
10 |
p. 971-
1 p.
|
artikel
|
| 258 |
Radiation effects in thin films of high T
c superconductors
|
|
|
1989
|
39 |
10 |
p. 988-
1 p.
|
artikel
|
| 259 |
Radiation effects on metal-insulator-semiconductor diode energetic ion detectors
|
|
|
1989
|
39 |
10 |
p. 988-
1 p.
|
artikel
|
| 260 |
(111) random and 〈110〉 channeled implantation profiles and range parameters in Hg1−x
Cd
x
Te
|
|
|
1989
|
39 |
10 |
p. 1001-
1 p.
|
artikel
|
| 261 |
Range distribution of implanted cesium ions in silicon dioxide films
|
|
|
1989
|
39 |
10 |
p. 986-
1 p.
|
artikel
|
| 262 |
Range measurements and thermal stability study of AZ111 photoresist implanted with Bi ions
|
|
|
1989
|
39 |
10 |
p. 987-
1 p.
|
artikel
|
| 263 |
Range profiles of Ar implanted into C films
|
|
|
1989
|
39 |
10 |
p. 989-
1 p.
|
artikel
|
| 264 |
Range profiles of helium in solids
|
|
|
1989
|
39 |
10 |
p. 1001-
1 p.
|
artikel
|
| 265 |
Reaction of atomic and molecular bromine with aluminum
|
|
|
1989
|
39 |
10 |
p. 971-
1 p.
|
artikel
|
| 266 |
Reactive and chemically assisted ion beam etching of Si and SiO2
|
|
|
1989
|
39 |
10 |
p. 997-
1 p.
|
artikel
|
| 267 |
Reactive and nonreactive ion mixing of Ti films on carbon substrates
|
|
|
1989
|
39 |
10 |
p. 994-
1 p.
|
artikel
|
| 268 |
Reconsidering the mechanisms of laser sputtering with Knudsen-layer formation taken into account
|
|
|
1989
|
39 |
10 |
p. 976-
1 p.
|
artikel
|
| 269 |
Reflection electron microscopy observation of the Si-SiO2 interface
|
|
|
1989
|
39 |
10 |
p. 996-
1 p.
|
artikel
|
| 270 |
Reflection high-energy electron diffraction observations during growth of ZnS
x
Se1−x
(0 ⩽ x ⩽ 1) by molecular-beam epitaxy
|
|
|
1989
|
39 |
10 |
p. 990-
1 p.
|
artikel
|
| 271 |
Reflection high-energy electron diffraction studies of principal streak intensity profiles and adatom coverage of (100) GaAs grown by molecular-beam epitaxy
|
|
|
1989
|
39 |
10 |
p. 1003-
1 p.
|
artikel
|
| 272 |
Reordering of polycrystalline Pd2Si on epitaxial Pd2Si
|
|
|
1989
|
39 |
10 |
p. 996-
1 p.
|
artikel
|
| 273 |
Role of the modifications induced by ion beam irradiation in the optical and conducting properties of polyimide
|
|
|
1989
|
39 |
10 |
p. 985-
1 p.
|
artikel
|
| 274 |
Rotary pump backstreaming: an analytical appraisal of practical results and the factors affecting them
|
|
|
1989
|
39 |
10 |
p. 969-
1 p.
|
artikel
|
| 275 |
Scanning differential polarization microscope : its use to image linear and circular differential scattering
|
|
|
1989
|
39 |
10 |
p. 1003-
1 p.
|
artikel
|
| 276 |
Scanning electron microscopy study of seeded recrystallization of silicon-on-insulator layers with either polycrystalline or epitaxially deposited silicon in the seed windows
|
|
|
1989
|
39 |
10 |
p. 1004-
1 p.
|
artikel
|
| 277 |
Scanning positron microbeam
|
|
|
1989
|
39 |
10 |
p. 983-
1 p.
|
artikel
|
| 278 |
Scanning tunneling microscopy imaging of microbridges under scanning electron microscopy control
|
|
|
1989
|
39 |
10 |
p. 1005-
1 p.
|
artikel
|
| 279 |
Scanning tunneling microscopy of graphite adsorbed metal species and sliding charge-density wave systems
|
|
|
1989
|
39 |
10 |
p. 1005-
1 p.
|
artikel
|
| 280 |
Scanning tunneling microscopy topography of electron-beam evaporated niobium thin films in Nb-NbO
x
-Pb tunnel junctions on quartz substrates
|
|
|
1989
|
39 |
10 |
p. 1005-
1 p.
|
artikel
|
| 281 |
Secondary ion beam profile calculations in a 252Cf plasma desorption time-of-light mass spectrometer
|
|
|
1989
|
39 |
10 |
p. 1000-
1 p.
|
artikel
|
| 282 |
Secondary ion mass spectrometry sensitivity factors versus ionization potential and electron affinity for many elements in HgCdTe and CdTe using oxygen and cesium ion beams
|
|
|
1989
|
39 |
10 |
p. 1002-
1 p.
|
artikel
|
| 283 |
Secondary ion yield changes in Si and GaAs due to topography changes during O+
2 or Cs+ ion bombardment
|
|
|
1989
|
39 |
10 |
p. 986-
1 p.
|
artikel
|
| 284 |
Seed shape dependence of Si solid-phase epitaxy : preferential facet growth
|
|
|
1989
|
39 |
10 |
p. 990-
1 p.
|
artikel
|
| 285 |
Self-similar expansions in ion beam fusion
|
|
|
1989
|
39 |
10 |
p. 999-
1 p.
|
artikel
|
| 286 |
Shattering solids by irradiating supercurrent ion beams
|
|
|
1989
|
39 |
10 |
p. 989-
1 p.
|
artikel
|
| 287 |
Silicon and silicon dioxide thermal bonding for silicon-on-insulator applications
|
|
|
1989
|
39 |
10 |
p. 996-
1 p.
|
artikel
|
| 288 |
Simulation of isotopic mass effects in sputtering, II
|
|
|
1989
|
39 |
10 |
p. 978-
1 p.
|
artikel
|
| 289 |
Solid lubricating fluorine-containing polymer film synthesized by perfluoropolyether sputtering
|
|
|
1989
|
39 |
10 |
p. 975-
1 p.
|
artikel
|
| 290 |
Some characteristics of an inverted magnetron cold cathode ionization gauge with dual feedthroughs
|
|
|
1989
|
39 |
10 |
p. 971-
1 p.
|
artikel
|
| 291 |
Specimen damage by nuclear microbeams and its avoidance
|
|
|
1989
|
39 |
10 |
p. 986-
1 p.
|
artikel
|
| 292 |
Spectron finds leak in Oxford street megastore
|
|
|
1989
|
39 |
10 |
p. 1015-1016
2 p.
|
artikel
|
| 293 |
Spectroscopic studies of fluorescent emission in plasma etching of silicon nitride
|
|
|
1989
|
39 |
10 |
p. 998-
1 p.
|
artikel
|
| 294 |
Sputtered cluster mass distributions, thermodynamic equilibrium and critical phenomena
|
|
|
1989
|
39 |
10 |
p. 978-
1 p.
|
artikel
|
| 295 |
Sputtering of insulators
|
|
|
1989
|
39 |
10 |
p. 976-
1 p.
|
artikel
|
| 296 |
Static and dynamic deformations stimulated by ion implantation
|
|
|
1989
|
39 |
10 |
p. 986-
1 p.
|
artikel
|
| 297 |
Stopping powers of Be, Al, Ti, V, Fe, Co, Ni, Cu, Zn, Mo, Rh, Ag, Sn, Ta, Pt and Au for 6.5 MeV protons
|
|
|
1989
|
39 |
10 |
p. 1001-
1 p.
|
artikel
|
| 298 |
Stress distribution in released vacuum-deposited aluminum films
|
|
|
1989
|
39 |
10 |
p. 974-
1 p.
|
artikel
|
| 299 |
Stress modification of NiFe films by ion bombardment concurrent with film growth by alloy evaporation
|
|
|
1989
|
39 |
10 |
p. 979-
1 p.
|
artikel
|
| 300 |
Striations in a gas discharge
|
|
|
1989
|
39 |
10 |
p. 999-
1 p.
|
artikel
|
| 301 |
Structural and electrical properties of silicon nitride films prepared by multipolar plasma-enhanced deposition
|
|
|
1989
|
39 |
10 |
p. 980-
1 p.
|
artikel
|
| 302 |
Structure of reactively sputtered chromium-carbon films
|
|
|
1989
|
39 |
10 |
p. 975-
1 p.
|
artikel
|
| 303 |
Structure of TiN coatings deposited at relatively high rates and low temperatures by magnetron sputtering
|
|
|
1989
|
39 |
10 |
p. 974-
1 p.
|
artikel
|
| 304 |
Study of metal surfaces by scanning tunneling microscopy with field ion microscopy
|
|
|
1989
|
39 |
10 |
p. 1005-
1 p.
|
artikel
|
| 305 |
Superconducting and transport properties and the mixing process in Al/Si multilayer films
|
|
|
1989
|
39 |
10 |
p. 995-
1 p.
|
artikel
|
| 306 |
Surface analysis of bulk polymers using single- and multiple-photon ionization
|
|
|
1989
|
39 |
10 |
p. 1006-
1 p.
|
artikel
|
| 307 |
Surface chemical analysis of polydiacetylene films exposed to electron beam and ultraviolet irradiation
|
|
|
1989
|
39 |
10 |
p. 1006-
1 p.
|
artikel
|
| 308 |
Surface cracking of vitreous fused silica induced by MeV ion beam bombardment
|
|
|
1989
|
39 |
10 |
p. 987-
1 p.
|
artikel
|
| 309 |
Surface effects on the stability of hot cathode ionization gauges
|
|
|
1989
|
39 |
10 |
p. 971-
1 p.
|
artikel
|
| 310 |
Techniques for testing cryopump capacity
|
|
|
1989
|
39 |
10 |
p. 972-
1 p.
|
artikel
|
| 311 |
The application of dynamic recoil mixing to enhance adhesion of gold films on silica substrates
|
|
|
1989
|
39 |
10 |
p. 978-
1 p.
|
artikel
|
| 312 |
The deposition rate dependence of plasma polymerization on the radius of curvature of the substrate
|
|
|
1989
|
39 |
10 |
p. 982-
1 p.
|
artikel
|
| 313 |
The design of a versatile scanning proton microprobe of high resolution and efficiency
|
|
|
1989
|
39 |
10 |
p. 1006-
1 p.
|
artikel
|
| 314 |
The development and use of a time-of-flight system to analyse energy spectra produced by a fast atom beam source
|
|
|
1989
|
39 |
10 |
p. 982-
1 p.
|
artikel
|
| 315 |
The effect of a thin ultraviolet grown oxide on metal-GaAs contacts
|
|
|
1989
|
39 |
10 |
p. 989-
1 p.
|
artikel
|
| 316 |
The effect of cooling rate on the surface reconstruction of annealed silicon(111) studied by scanning tunneling microscopy and low-energy electron diffraction
|
|
|
1989
|
39 |
10 |
p. 1004-
1 p.
|
artikel
|
| 317 |
The effect of stoichiometry on sputtering deuterium retention and surface damage in titanium carbide films
|
|
|
1989
|
39 |
10 |
p. 974-
1 p.
|
artikel
|
| 318 |
The effects of p
+ implant species and dose on black gold formation
|
|
|
1989
|
39 |
10 |
p. 988-
1 p.
|
artikel
|
| 319 |
The electron-beam column for a high-dose and high-voltage electronbeam exposure system Ex-7
|
|
|
1989
|
39 |
10 |
p. 983-
1 p.
|
artikel
|
| 320 |
The emerging technologies of oil-free vacuum pumps
|
|
|
1989
|
39 |
10 |
p. 970-
1 p.
|
artikel
|
| 321 |
The formation of an amorphous silicide by thermal reaction of sputter-deposited Ti and Si layers
|
|
|
1989
|
39 |
10 |
p. 996-
1 p.
|
artikel
|
| 322 |
The friction and wear of ion-implanted ceramics: the role of adhesion
|
|
|
1989
|
39 |
10 |
p. 978-
1 p.
|
artikel
|
| 323 |
The influence of heavier gases in pumping helium and hydrogen in an ion pump
|
|
|
1989
|
39 |
10 |
p. 972-
1 p.
|
artikel
|
| 324 |
The influence of thermal relaxation on implantation induced disorder accumulation
|
|
|
1989
|
39 |
10 |
p. 987-
1 p.
|
artikel
|
| 325 |
The interaction of copper and nickel : nickel monolayers on a Cu{100} single crystal
|
|
|
1989
|
39 |
10 |
p. 994-
1 p.
|
artikel
|
| 326 |
The metastable C49 structure in sputtered TiSi2 thin films
|
|
|
1989
|
39 |
10 |
p. 977-
1 p.
|
artikel
|
| 327 |
The microbeam facility at the University of Montreal
|
|
|
1989
|
39 |
10 |
p. 983-
1 p.
|
artikel
|
| 328 |
The molecular drag pump: principle, characteristics, and applications
|
|
|
1989
|
39 |
10 |
p. 970-
1 p.
|
artikel
|
| 329 |
The oxidation of PtSi, Pt2Si and polycrystalline silicon in ultrahigh vacuum residual gas
|
|
|
1989
|
39 |
10 |
p. 994-
1 p.
|
artikel
|
| 330 |
The properties of aluminum thin films sputter deposited at elevated temperatures
|
|
|
1989
|
39 |
10 |
p. 976-
1 p.
|
artikel
|
| 331 |
Thermal stability and Bi diffusion in the implanted AZ111 photoresist
|
|
|
1989
|
39 |
10 |
p. 985-
1 p.
|
artikel
|
| 332 |
Thermochemical modeling of interfacial reactions and selective deposition at growth from the vapor
|
|
|
1989
|
39 |
10 |
p. 994-
1 p.
|
artikel
|
| 333 |
Thin palladium films prepared by metal-organic plasma-enhanced chemical vapour deposition
|
|
|
1989
|
39 |
10 |
p. 981-
1 p.
|
artikel
|
| 334 |
Thirty years of turbomolecular pumps: a review and recent developments
|
|
|
1989
|
39 |
10 |
p. 970-
1 p.
|
artikel
|
| 335 |
Time of flight measurements of the ratio of radial diffusion coefficient and mobility for electron swarms in helium, argon, neon and krypton at high E/N
|
|
|
1989
|
39 |
10 |
p. 999-
1 p.
|
artikel
|
| 336 |
Tip contamination effects in ambient pressure scanning tunneling microscopy imaging of graphite
|
|
|
1989
|
39 |
10 |
p. 1005-
1 p.
|
artikel
|
| 337 |
Titanium silicides formed by rapid thermal vacuum processing
|
|
|
1989
|
39 |
10 |
p. 997-
1 p.
|
artikel
|
| 338 |
Torvac now offers comprehensive furnace capability
|
|
|
1989
|
39 |
10 |
p. 1016-
1 p.
|
artikel
|
| 339 |
Total and partial pressure measurement in vacuum systems
|
Steckelmacher, W.
|
|
1989
|
39 |
10 |
p. 1021-
1 p.
|
artikel
|
| 340 |
“Tracking” tunneling microscopy
|
|
|
1989
|
39 |
10 |
p. 1004-
1 p.
|
artikel
|
| 341 |
Transient annealing of Sn+ implanted GaAs
|
|
|
1989
|
39 |
10 |
p. 995-
1 p.
|
artikel
|
| 342 |
Transient boron diffusion in ion-implanted crystalline and amorphous silicon
|
|
|
1989
|
39 |
10 |
p. 987-
1 p.
|
artikel
|
| 343 |
Transverse straggling of MeV oxygen ions implanted in silicon
|
|
|
1989
|
39 |
10 |
p. 987-
1 p.
|
artikel
|
| 344 |
Tritium removal from noble gas streams
|
|
|
1989
|
39 |
10 |
p. 972-
1 p.
|
artikel
|
| 345 |
Tungsten-rhenium alloys as diffusion barriers between aluminum and silicon
|
|
|
1989
|
39 |
10 |
p. 993-
1 p.
|
artikel
|
| 346 |
Tunneling microscopy of NbSe2 in air
|
|
|
1989
|
39 |
10 |
p. 1004-
1 p.
|
artikel
|
| 347 |
Uhv linear actuators for NSLS beam lines
|
|
|
1989
|
39 |
10 |
p. 982-
1 p.
|
artikel
|
| 348 |
UHV system aids MIT's research into high temperature superconductors
|
|
|
1989
|
39 |
10 |
p. 1017-1018
2 p.
|
artikel
|
| 349 |
Ultrahigh vacuum in situ transmission electron microscopy observations of molecular-beam epitaxially grown InSb(
111
)
|
|
|
1989
|
39 |
10 |
p. 990-
1 p.
|
artikel
|
| 350 |
Unconstrained optimization in LEED : application to Ge(111) (1 x 1)-H
|
|
|
1989
|
39 |
10 |
p. 1003-
1 p.
|
artikel
|
| 351 |
Uniform composition TeSe film preparation from alloy sources
|
|
|
1989
|
39 |
10 |
p. 973-
1 p.
|
artikel
|
| 352 |
Use of porous plugs in the transition flow range for the calibration of vacuum gauges
|
|
|
1989
|
39 |
10 |
p. 970-
1 p.
|
artikel
|
| 353 |
Vacuum furnace for steel powder atomising
|
|
|
1989
|
39 |
10 |
p. 1012-
1 p.
|
artikel
|
| 354 |
Vacuum pumping system for the Lanzhou cyclotron
|
|
|
1989
|
39 |
10 |
p. 970-
1 p.
|
artikel
|
| 355 |
Vacuum vapor deposited thin films of a perylene dicarboximide derivative: microstructure versus deposition parameters
|
|
|
1989
|
39 |
10 |
p. 973-
1 p.
|
artikel
|
| 356 |
Valence-band photoemission and electron-energy-loss studies of reactive ion etched silicon dioxide
|
|
|
1989
|
39 |
10 |
p. 997-
1 p.
|
artikel
|
| 357 |
Vapor-deposited superconducting lanthanum sulfide films
|
|
|
1989
|
39 |
10 |
p. 973-
1 p.
|
artikel
|
| 358 |
Variation of yield with thickness in SIMS and PDMS : measurements of secondary ion emission from organized molecular films
|
|
|
1989
|
39 |
10 |
p. 1002-
1 p.
|
artikel
|
| 359 |
Variations in the reflectance of TiN, ZrN and HfN
|
|
|
1989
|
39 |
10 |
p. 981-
1 p.
|
artikel
|
| 360 |
VAT series 14 gate valves
|
|
|
1989
|
39 |
10 |
p. 1010-
1 p.
|
artikel
|
| 361 |
Veeco instruments appoints new UK sales manager
|
|
|
1989
|
39 |
10 |
p. 1017-
1 p.
|
artikel
|
| 362 |
Wet-chemical etching of III–V semiconductors
|
|
|
1989
|
39 |
10 |
p. 998-
1 p.
|
artikel
|
| 363 |
X-ray photoemission spectroscopy characterization of silicon surfaces after CF4/H2 magnetron ion etching : comparisons to reactive ion etching
|
|
|
1989
|
39 |
10 |
p. 1006-
1 p.
|
artikel
|
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