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                             30 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 An optimization method for nonequiradial electrostatic deflection systems Grigorov, Grigor Nikolov
1988
38 11 p. 1025-1028
4 p.
artikel
2 Author index of articles 1988
38 11 p. 1057-
1 p.
artikel
3 Background in Auger electron spectroscopy 1988
38 11 p. 1054-
1 p.
artikel
4 Computer simulated and channelling studies of damage distributions in phosphorus implanted silicon Budinov, H
1988
38 11 p. 995-997
3 p.
artikel
5 Correlation between secondary ion and ion-photon emissions 1988
38 11 p. 1051-
1 p.
artikel
6 Electron beam evaporation and welding: plasma formation and liquid pool instabilities Stefanov, B
1988
38 11 p. 1029-1033
5 p.
artikel
7 Electronically stimulated desorption 1988
38 11 p. 1051-1052
2 p.
artikel
8 Electron-laser-ion technology for treatment of semiconductor structures 1988
38 11 p. 1054-1055
2 p.
artikel
9 Improvement of the corrosion properties of metals by ion implantation Radjabov, TD
1988
38 11 p. 979-985
7 p.
artikel
10 Introduction Karpuzov, D.S.
1988
38 11 p. 965-
1 p.
artikel
11 Ion beam exposure of PMMA polymer resist Mühle, R
1988
38 11 p. 1005-1006
2 p.
artikel
12 Ion beam mixing in Al/Fe multilayered thin films Rauschenbach, B
1988
38 11 p. 987-990
4 p.
artikel
13 Ion bombardment as a tool to modify surface properties of different materials Braun, M
1988
38 11 p. 973-977
5 p.
artikel
14 Ion implantation and annealing 1988
38 11 p. 1053-
1 p.
artikel
15 Ion implantation in metals—structure investigations and applications Reuther, H
1988
38 11 p. 967-971
5 p.
artikel
16 Ion microbeam technique 1988
38 11 p. 1054-
1 p.
artikel
17 Modern trends in secondary ion mass spectroscopy 1988
38 11 p. 1054-
1 p.
artikel
18 Oxygen incorporation in Al thin films during deposition by dc magnetron sputtering Popov, DN
1988
38 11 p. 1015-1017
3 p.
artikel
19 Range and range profile calculations for MeV phosphorus implantation into silicon Posselt, M
1988
38 11 p. 991-993
3 p.
artikel
20 Reactive ion etching of deep trenches in silicon with CF2Cl2 and O2 Wöhl, G
1988
38 11 p. 1011-1014
4 p.
artikel
21 Role of ion/surface interactions in nucleation kinetics and elemental incorporation probabilities during film growth from the vapour phase 1988
38 11 p. 1053-
1 p.
artikel
22 Role of ion/surface interactions on film growth kinetics: applications to hard coatings 1988
38 11 p. 1053-
1 p.
artikel
23 Scanning electron microscopy in submicron structure diagnostics Aristov, VV
1988
38 11 p. 1045-1050
6 p.
artikel
24 Simulation of erosion induced surface evolution in temporally and spatially dependent systems Katardjiev, IV
1988
38 11 p. 999-1004
6 p.
artikel
25 Structural properties of coatings prepared by flash evaporation and magnetron sputtering of Cu-15% Sn and Cu-20% Sn alloys Tzaneva, DV
1988
38 11 p. 1019-1024
6 p.
artikel
26 Studies of ion beam sputtering and deposition processes and their influence on surface topography 1988
38 11 p. 1053-1054
2 p.
artikel
27 Technological capabilities of plasma electron beam sources 1988
38 11 p. 1055-
1 p.
artikel
28 The effect of ion implantation on polymer mask resistance to ion beam etching Borzenko, TB
1988
38 11 p. 1007-1009
3 p.
artikel
29 The influence of electron beam energy on defect density in MOS device quality oxides Balasiński, A
1988
38 11 p. 1041-1043
3 p.
artikel
30 UHV apparatus for electron-stimulated desorption: experimental procedure and characteristics Kasabov, SG
1988
38 11 p. 1035-1039
5 p.
artikel
                             30 gevonden resultaten
 
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