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                             45 results found
no title author magazine year volume issue page(s) type
1 An AES study of the reduction of anodic HfO2 by bombardment with 3 keV Ar+ ions Sanz, JM
1987
37 5-6 p. 445-446
2 p.
article
2 Application of silicides in microelectronics 1987
37 5-6 p. 486-
1 p.
article
3 Boron implantation effects on Au: GaAs Schottky barrier Pérez, A
1987
37 5-6 p. 415-417
3 p.
article
4 Boron implantation influence on the backgating effect in GaAs MESFETs Samitier, J
1987
37 5-6 p. 411-413
3 p.
article
5 Coupled vacuum and heating power control for freeze-drying time reduction of solutions in phials Lombraña, JI
1987
37 5-6 p. 473-476
4 p.
article
6 Deposition of amorphous silicon films from an electrostatically confined silane plasma Andreu, J
1987
37 5-6 p. 443-444
2 p.
article
7 Deposition of transparent and conductive oxide thin films by activated reactive evaporation 1987
37 5-6 p. 491-
1 p.
article
8 Editorial: Software survey section Colligon, John S.
1987
37 5-6 p. I-IV
nvt p.
article
9 Effects of residual gases and rf power on ITO rf sputtered thin films Clement, M
1987
37 5-6 p. 447-449
3 p.
article
10 Effects of side wall ion reflection on maskless physical etching 1987
37 5-6 p. 491-
1 p.
article
11 Effects of the atmosphere on the resistance of ITO thin films Calderer, Josep
1987
37 5-6 p. 441-442
2 p.
article
12 Electron beam stimulated reactions on semiconductors 1987
37 5-6 p. 492-
1 p.
article
13 Epitaxial growth of in situ doped silicon by LPCVD Domínguez, C
1987
37 5-6 p. 407-409
3 p.
article
14 EPR study of the surface reactivity and reducibility under vacuum of a RhCl3/SrTiO3 catalyst precursor Blasco, T
1987
37 5-6 p. 469-471
3 p.
article
15 ESCA analysis of amorphous silicon nitride thin films 1987
37 5-6 p. 488-489
2 p.
article
16 ESD threshold and local bonding of dissociated species from H2O on niobium Rey, S
1987
37 5-6 p. 457-459
3 p.
article
17 Foreword 1987
37 5-6 p. 383-
1 p.
article
18 High performance uhv feedthroughs 1987
37 5-6 p. 493-
1 p.
article
19 Influence of the epitaxial layer on the current-voltage characteristics in high voltage VDMOS devices. Analysis of the quasi-saturation point Rebollo, J
1987
37 5-6 p. 399-401
3 p.
article
20 Interaction of O2 and/or N2 with active TiO2 surfaces by means of the dynamics of gas/solid interface at high temperatures 1987
37 5-6 p. 492-493
2 p.
article
21 Interfacial properties of metal overlayers on III–V compounds Lindau, I
1987
37 5-6 p. 385-390
6 p.
article
22 Ion implantation Armour, DG
1987
37 5-6 p. 423-427
5 p.
article
23 Lateral interactions between sulphur atoms adsorbed on Mo(110) de Miguel, JJ
1987
37 5-6 p. 455-456
2 p.
article
24 Low pressure silicon epitaxy in a hot-wall reactor Domínguez, C
1987
37 5-6 p. 419-421
3 p.
article
25 New patent 1987
37 5-6 p. 505-517
13 p.
article
26 Non-dissociative high temperature induced states of CO from CO2 adsorbed on tungsten surface near room temperature González, F
1987
37 5-6 p. 461-463
3 p.
article
27 Optical properties of reactively sputtered silicon nitride films Paule, E
1987
37 5-6 p. 395-397
3 p.
article
28 Oxide thickness determination in CrSiO2Si structures by dc current-voltage pairs Aymerich-Humet, X
1987
37 5-6 p. 403-405
3 p.
article
29 Preparation and characterization of platinum catalysts supported on fumed silica Folgado, MA
1987
37 5-6 p. 451-454
4 p.
article
30 Present state of degassing of steels in vacuum 1987
37 5-6 p. 493-
1 p.
article
31 Residual vacuum in evacuated solar collectors Adrados, JP
1987
37 5-6 p. 477-479
3 p.
article
32 Rheotaxial growth of semiconductor thin films 1987
37 5-6 p. 492-
1 p.
article
33 Rutherford backscattering spectrometry Perrière, Jaques
1987
37 5-6 p. 429-432
4 p.
article
34 Silicide formation study on low-energy ion-beam processed silicon 1987
37 5-6 p. 486-487
2 p.
article
35 Small area XPS by electron optical aperturing Demanet, CM
1987
37 5-6 p. 465-467
3 p.
article
36 Sputtering process of Cu2S in an Ar atmosphere Santamaria, J
1987
37 5-6 p. 433-436
4 p.
article
37 Surface analysis by scanning tunnelling microscopy 1987
37 5-6 p. 492-
1 p.
article
38 The application of the vacuum degassing technique in steel plant in order to obtain new quality grades in non-oriented magnetic steel sheet Ibarrondo, I
1987
37 5-6 p. 481-483
3 p.
article
39 The influence of pressure on the operation of glow-discharge sputtering systems Abril, I
1987
37 5-6 p. 391-394
4 p.
article
40 The initial growth of Pb deposited on Cu(100) studied by the scattering of thermal He atoms 1987
37 5-6 p. 487-488
2 p.
article
41 Thin Cu x S sputtered films in Ar/H2 atmospheres Iborra, E
1987
37 5-6 p. 437-439
3 p.
article
42 Thin film deposition techniques for electronic materials 1987
37 5-6 p. 491-
1 p.
article
43 Up-to-date techniques for practical surface analysis 1987
37 5-6 p. 485-486
2 p.
article
44 Vacuum news 1987
37 5-6 p. 497-503
7 p.
article
45 VI Spanish conference on vacuum and its applications 1987
37 5-6 p. 495-496
2 p.
article
                             45 results found
 
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