no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
1 |
An AES study of the reduction of anodic HfO2 by bombardment with 3 keV Ar+ ions
|
Sanz, JM |
|
1987 |
37 |
5-6 |
p. 445-446 2 p. |
article |
2 |
Application of silicides in microelectronics
|
|
|
1987 |
37 |
5-6 |
p. 486- 1 p. |
article |
3 |
Boron implantation effects on Au: GaAs Schottky barrier
|
Pérez, A |
|
1987 |
37 |
5-6 |
p. 415-417 3 p. |
article |
4 |
Boron implantation influence on the backgating effect in GaAs MESFETs
|
Samitier, J |
|
1987 |
37 |
5-6 |
p. 411-413 3 p. |
article |
5 |
Coupled vacuum and heating power control for freeze-drying time reduction of solutions in phials
|
Lombraña, JI |
|
1987 |
37 |
5-6 |
p. 473-476 4 p. |
article |
6 |
Deposition of amorphous silicon films from an electrostatically confined silane plasma
|
Andreu, J |
|
1987 |
37 |
5-6 |
p. 443-444 2 p. |
article |
7 |
Deposition of transparent and conductive oxide thin films by activated reactive evaporation
|
|
|
1987 |
37 |
5-6 |
p. 491- 1 p. |
article |
8 |
Editorial: Software survey section
|
Colligon, John S. |
|
1987 |
37 |
5-6 |
p. I-IV nvt p. |
article |
9 |
Effects of residual gases and rf power on ITO rf sputtered thin films
|
Clement, M |
|
1987 |
37 |
5-6 |
p. 447-449 3 p. |
article |
10 |
Effects of side wall ion reflection on maskless physical etching
|
|
|
1987 |
37 |
5-6 |
p. 491- 1 p. |
article |
11 |
Effects of the atmosphere on the resistance of ITO thin films
|
Calderer, Josep |
|
1987 |
37 |
5-6 |
p. 441-442 2 p. |
article |
12 |
Electron beam stimulated reactions on semiconductors
|
|
|
1987 |
37 |
5-6 |
p. 492- 1 p. |
article |
13 |
Epitaxial growth of in situ doped silicon by LPCVD
|
Domínguez, C |
|
1987 |
37 |
5-6 |
p. 407-409 3 p. |
article |
14 |
EPR study of the surface reactivity and reducibility under vacuum of a RhCl3/SrTiO3 catalyst precursor
|
Blasco, T |
|
1987 |
37 |
5-6 |
p. 469-471 3 p. |
article |
15 |
ESCA analysis of amorphous silicon nitride thin films
|
|
|
1987 |
37 |
5-6 |
p. 488-489 2 p. |
article |
16 |
ESD threshold and local bonding of dissociated species from H2O on niobium
|
Rey, S |
|
1987 |
37 |
5-6 |
p. 457-459 3 p. |
article |
17 |
Foreword
|
|
|
1987 |
37 |
5-6 |
p. 383- 1 p. |
article |
18 |
High performance uhv feedthroughs
|
|
|
1987 |
37 |
5-6 |
p. 493- 1 p. |
article |
19 |
Influence of the epitaxial layer on the current-voltage characteristics in high voltage VDMOS devices. Analysis of the quasi-saturation point
|
Rebollo, J |
|
1987 |
37 |
5-6 |
p. 399-401 3 p. |
article |
20 |
Interaction of O2 and/or N2 with active TiO2 surfaces by means of the dynamics of gas/solid interface at high temperatures
|
|
|
1987 |
37 |
5-6 |
p. 492-493 2 p. |
article |
21 |
Interfacial properties of metal overlayers on III–V compounds
|
Lindau, I |
|
1987 |
37 |
5-6 |
p. 385-390 6 p. |
article |
22 |
Ion implantation
|
Armour, DG |
|
1987 |
37 |
5-6 |
p. 423-427 5 p. |
article |
23 |
Lateral interactions between sulphur atoms adsorbed on Mo(110)
|
de Miguel, JJ |
|
1987 |
37 |
5-6 |
p. 455-456 2 p. |
article |
24 |
Low pressure silicon epitaxy in a hot-wall reactor
|
Domínguez, C |
|
1987 |
37 |
5-6 |
p. 419-421 3 p. |
article |
25 |
New patent
|
|
|
1987 |
37 |
5-6 |
p. 505-517 13 p. |
article |
26 |
Non-dissociative high temperature induced states of CO from CO2 adsorbed on tungsten surface near room temperature
|
González, F |
|
1987 |
37 |
5-6 |
p. 461-463 3 p. |
article |
27 |
Optical properties of reactively sputtered silicon nitride films
|
Paule, E |
|
1987 |
37 |
5-6 |
p. 395-397 3 p. |
article |
28 |
Oxide thickness determination in CrSiO2Si structures by dc current-voltage pairs
|
Aymerich-Humet, X |
|
1987 |
37 |
5-6 |
p. 403-405 3 p. |
article |
29 |
Preparation and characterization of platinum catalysts supported on fumed silica
|
Folgado, MA |
|
1987 |
37 |
5-6 |
p. 451-454 4 p. |
article |
30 |
Present state of degassing of steels in vacuum
|
|
|
1987 |
37 |
5-6 |
p. 493- 1 p. |
article |
31 |
Residual vacuum in evacuated solar collectors
|
Adrados, JP |
|
1987 |
37 |
5-6 |
p. 477-479 3 p. |
article |
32 |
Rheotaxial growth of semiconductor thin films
|
|
|
1987 |
37 |
5-6 |
p. 492- 1 p. |
article |
33 |
Rutherford backscattering spectrometry
|
Perrière, Jaques |
|
1987 |
37 |
5-6 |
p. 429-432 4 p. |
article |
34 |
Silicide formation study on low-energy ion-beam processed silicon
|
|
|
1987 |
37 |
5-6 |
p. 486-487 2 p. |
article |
35 |
Small area XPS by electron optical aperturing
|
Demanet, CM |
|
1987 |
37 |
5-6 |
p. 465-467 3 p. |
article |
36 |
Sputtering process of Cu2S in an Ar atmosphere
|
Santamaria, J |
|
1987 |
37 |
5-6 |
p. 433-436 4 p. |
article |
37 |
Surface analysis by scanning tunnelling microscopy
|
|
|
1987 |
37 |
5-6 |
p. 492- 1 p. |
article |
38 |
The application of the vacuum degassing technique in steel plant in order to obtain new quality grades in non-oriented magnetic steel sheet
|
Ibarrondo, I |
|
1987 |
37 |
5-6 |
p. 481-483 3 p. |
article |
39 |
The influence of pressure on the operation of glow-discharge sputtering systems
|
Abril, I |
|
1987 |
37 |
5-6 |
p. 391-394 4 p. |
article |
40 |
The initial growth of Pb deposited on Cu(100) studied by the scattering of thermal He atoms
|
|
|
1987 |
37 |
5-6 |
p. 487-488 2 p. |
article |
41 |
Thin Cu x S sputtered films in Ar/H2 atmospheres
|
Iborra, E |
|
1987 |
37 |
5-6 |
p. 437-439 3 p. |
article |
42 |
Thin film deposition techniques for electronic materials
|
|
|
1987 |
37 |
5-6 |
p. 491- 1 p. |
article |
43 |
Up-to-date techniques for practical surface analysis
|
|
|
1987 |
37 |
5-6 |
p. 485-486 2 p. |
article |
44 |
Vacuum news
|
|
|
1987 |
37 |
5-6 |
p. 497-503 7 p. |
article |
45 |
VI Spanish conference on vacuum and its applications
|
|
|
1987 |
37 |
5-6 |
p. 495-496 2 p. |
article |