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                             192 results found
no title author magazine year volume issue page(s) type
1 A formula for the calculation of the sputtering yield of polycrystalline material 1985
35 8 p. 331-
1 p.
article
2 A general review of synchrotron radiation, its uses and special technologies 1985
35 8 p. 332-
1 p.
article
3 A high-power polarized coherent TE N2 laser 1985
35 8 p. 328-
1 p.
article
4 A high resolution electron spectrometer facility for studying the spectra of microscopically localized field emission sites on planar cathodes 1985
35 8 p. 327-
1 p.
article
5 A high stability low cost film thickness monitor Nyaiesh, AR
1985
35 8 p. 325-326
2 p.
article
6 Al alloy-ceramic ultrahigh vacuum and cryogenic feedthrough useful from dc to 6.5 GHz 1985
35 8 p. 329-
1 p.
article
7 A miniature scanning electron microscope for investigation of the interior surface of a superconducting Nb radiofrequency accelerating cavity 1985
35 8 p. 345-
1 p.
article
8 A molecular dynamics study of irradiation damage in rutile, TiO2 1985
35 8 p. 343-
1 p.
article
9 A multibeam scheme for electron-beam lithography 1985
35 8 p. 343-
1 p.
article
10 Analysis of surface structures and of size and shape variations in ionitrided precipitation hardening stainless steel samples Tesi, B
1985
35 8 p. 307-314
8 p.
article
11 Analytical model for low-pressure gas discharges: application to the Hg+;Ar discharge 1985
35 8 p. 334-
1 p.
article
12 An automatic thin-film thickness indicator implemented with a Z-80 microcomputer 1985
35 8 p. 330-
1 p.
article
13 An e-beam microfabrication system for nanolithography 1985
35 8 p. 344-
1 p.
article
14 An electron-beam/optical-hybrid lithography approach to submicrometer electronic devices 1985
35 8 p. 344-
1 p.
article
15 Angular distributions and sputtering yield of Al and Al2O3 during 40 keV argon ion bombardment 1985
35 8 p. 336-
1 p.
article
16 Annealing and light induced changes in the field effect conductance of amorphous silicon 1985
35 8 p. 341-
1 p.
article
17 Anode surface temperature and spot formation model for the vacuum arc 1985
35 8 p. 332-
1 p.
article
18 A quantitative account of the mechanisms of the positive column HeCd+ laser (441.6 mm) 1985
35 8 p. 328-
1 p.
article
19 A secondary electron detector for scanning electron microscopy of irradiated nuclear fuel 1985
35 8 p. 346-
1 p.
article
20 A simple model for the lowest excited states of α-CO/W (100): application to electron stimulated desorption 1985
35 8 p. 327-
1 p.
article
21 Assessment of the extent of atomic mixing from sputtering experiments 1985
35 8 p. 331-
1 p.
article
22 A study of defects in amorphous silicon films 1985
35 8 p. 333-
1 p.
article
23 A study of the sputtering of copper-nickel using a combination of techniques 1985
35 8 p. 331-
1 p.
article
24 A tensile testing machine for evaporated thin metal films 1985
35 8 p. 330-
1 p.
article
25 Cathodoluminescence studies of post-range defect introduction from ion implantation in CdSe 1985
35 8 p. 341-
1 p.
article
26 Channeling measurements of lattice disorder at the GaAsInAs (100) heterojunction 1985
35 8 p. 334-
1 p.
article
27 Characterization and annealing behavior of drop levels in CdTe epitaxial layers 1985
35 8 p. 341-
1 p.
article
28 Chlorine and hydrogen chloride on clean and oxygen-covered Fe (100): Bonding and reactions 1985
35 8 p. 346-
1 p.
article
29 Compensation mechanisms related to boron implantation in GaAs 1985
35 8 p. 340-
1 p.
article
30 Competing ambient effects on the interdiffusion in Pt/Ni Al films 1985
35 8 p. 339-
1 p.
article
31 Competing processes of Si molecular beam reactive etching and simultaneous deposition on film and bulk SiO2 1985
35 8 p. 339-
1 p.
article
32 Continuous-wave laser fluorescence spectroscopy of impurities in tokamaks 1985
35 8 p. 334-
1 p.
article
33 Cryopump regeneration studies 1985
35 8 p. 328-
1 p.
article
34 Crystalline aspects of impurity generated sputter cones 1985
35 8 p. 330-
1 p.
article
35 cw-laser annealed solar cells 1985
35 8 p. 339-
1 p.
article
36 Daytime E-region ion and nitric oxide densities 1985
35 8 p. 335-
1 p.
article
37 Density perturbations induced by a discharge in a laser cavity 1985
35 8 p. 328-
1 p.
article
38 Deposition and properties of optical oxide coatings from polymerized solutions 1985
35 8 p. 330-
1 p.
article
39 Depth distribution of ion-implanted argon in gadolinium and samarium films 1985
35 8 p. 338-
1 p.
article
40 Design of an electrostatic ion optical system for microfabrication with 100 Å resolution 1985
35 8 p. 343-
1 p.
article
41 Determination of atmospheric aerosol particle size distribution and visibility using a mobile laboratory 1985
35 8 p. 335-
1 p.
article
42 Determination of effective surface recombination velocity and minority-carrier lifetime in high-efficiency Si solar cells 1985
35 8 p. 340-
1 p.
article
43 Deuterium trapping by impurities in copper 1985
35 8 p. 337-
1 p.
article
44 Developments in broad-beam, ion source technology and applications 1985
35 8 p. 343-
1 p.
article
45 Diffusion of Au into Sn thin films studied by the attenuated total reflection method 1985
35 8 p. 339-
1 p.
article
46 Diffusion of oxygen in silicon 1985
35 8 p. 339-
1 p.
article
47 Distribution of ionisation fractions in irradiated targets 1985
35 8 p. 343-
1 p.
article
48 Dynamic properties of charged walls in ion implanted garnets 1985
35 8 p. 338-
1 p.
article
49 Editorial: Software survey section Colligon, John S
1985
35 8 p. I-IV
nvt p.
article
50 e+e-→+heavy lepton by one photon exchange 1985
35 8 p. 334-
1 p.
article
51 Effect of heating on the electrical and optical properties of tin disulphide thin films 1985
35 8 p. 330-
1 p.
article
52 Effect of hydrogen on the deposition rate for planar rf magnetron sputtering of hydrogenated amorphous silicon 1985
35 8 p. 331-
1 p.
article
53 Effect of substrate temperature on SnTe films 1985
35 8 p. 330-
1 p.
article
54 Effects of various encapsulating films on laser recrystallization of silicon on SiO2 1985
35 8 p. 340-
1 p.
article
55 Electrical and structural properties of p-n junctions in cw laser annealed silicon 1985
35 8 p. 337-
1 p.
article
56 Electrical properties and grain size of phosphorus in situ doped and cw laser annealed polycrystalline silicon films 1985
35 8 p. 341-
1 p.
article
57 Electron-beam array lithography stitching experiments 1985
35 8 p. 344-
1 p.
article
58 Electron-beam fabrication of a 1.25 μm, 16-bit I 2 Lmuprocessor 1985
35 8 p. 344-
1 p.
article
59 Electron beam lithography 1985
35 8 p. 336-
1 p.
article
60 Electron stimulated desorption of excited alkali atoms from alkali halide surfaces 1985
35 8 p. 337-
1 p.
article
61 Energy consumption and the ability to obtain UHV using a Diffstak diffusion pump 1985
35 8 p. 327-
1 p.
article
62 Evaluation of a glass epoxy for vacuum applications Santhanam, Jayalaksmi
1985
35 8 p. 321-323
3 p.
article
63 Experimental investigation of flow characteristics and thermal accomodation in neutralizer gas cells 1985
35 8 p. 327-
1 p.
article
64 Experimental investigation of flow characteristics and thermal through a tube under free molecular conditions 1985
35 8 p. 327-
1 p.
article
65 Experimental investigation of the amorphous silicon melting temperature by fast heating process 1985
35 8 p. 340-
1 p.
article
66 Experimental performance of an open structure cryopump 1985
35 8 p. 329-
1 p.
article
67 Experimental support for a Gomer-type escape mechanism and heavy-ion tunnelling in field evaporation 1985
35 8 p. 330-
1 p.
article
68 Experimental validation of the solar aureole technique for determining aerosol size distributions 1985
35 8 p. 335-
1 p.
article
69 Expitaxial regrowth of (100) InP layers amorphized by ion implantation at room temperature 1985
35 8 p. 338-
1 p.
article
70 Expitaxial regrowth of intrinsic, 31P-doped and compensated (31P + 11B-doped) amorphous Si 1985
35 8 p. 338-
1 p.
article
71 Factors determining the compound phases formed by oxygen or nitrogen implantation in metals 1985
35 8 p. 337-
1 p.
article
72 FET fabrication using maskless ion implantation 1985
35 8 p. 336-
1 p.
article
73 Field ion microscopy and pulsed laser atom-probe mass spectroscopy of insulating glasses 1985
35 8 p. 345-
1 p.
article
74 Forbidden line emission from highly ionized atoms in tokamak plasmas 1985
35 8 p. 333-
1 p.
article
75 Formation and Schottky behavior of manganese silicides on n -type silicon 1985
35 8 p. 339-
1 p.
article
76 Formation of droplets on Si surfaces bombarded by In from a capillary type liquid metal ion source Rüdenauer, FG
1985
35 8 p. 315-320
6 p.
article
77 Growth of autectic thin film structures 1985
35 8 p. 337-
1 p.
article
78 Guidelines for construction of low-pressure gas manifolds 1985
35 8 p. 329-
1 p.
article
79 Heat-treatment studies on thin-film CdS/Cu x S solar cells 1985
35 8 p. 340-
1 p.
article
80 Height and slope distributions for surfaces of rough metallic deposits 1985
35 8 p. 330-
1 p.
article
81 High-efficiency high-energy flashlamp-pumped dye laser 1985
35 8 p. 328-
1 p.
article
82 High-resolution electron microscopy of electron irradiation damage in apatite 1985
35 8 p. 346-
1 p.
article
83 High-temperature annealing effects on tin oxide films 1985
35 8 p. 342-
1 p.
article
84 High-voltage double layers in a magnetised plasma column 1985
35 8 p. 335-
1 p.
article
85 Hydrogen content of a variety of plasma-deposited silicon nitrides 1985
35 8 p. 337-
1 p.
article
86 Ideal and relaxed surfaces of SiC 1985
35 8 p. 346-
1 p.
article
87 Impurity and defect levels in beryllium-doped GaAs grown by molecular beam epitaxy 1985
35 8 p. 338-
1 p.
article
88 Indirect plasma deposition of silicon dioxide 1985
35 8 p. 330-
1 p.
article
89 Indium antimonide-bismuth compositions grown by molecular beam epitaxy 1985
35 8 p. 341-
1 p.
article
90 Influence of buffer thickness on the performance of GaAs field effect transistors prepared by molecular beam epitaxy 1985
35 8 p. 342-
1 p.
article
91 Infrared interferometric analysis of thin films and optical surfaces 1985
35 8 p. 346-
1 p.
article
92 Infrared optogalvanic measurements on helium and helium-hydrogen discharges 1985
35 8 p. 328-
1 p.
article
93 Interactions of residual gases with a barium getter film as measured by AES and XPS 1985
35 8 p. 345-
1 p.
article
94 Interface structures during solid-phase-epitaxial growth in ion-implanted semiconductors and a crystallization model 1985
35 8 p. 339-
1 p.
article
95 Investigations of holes machined by laser beam on Al and Cr thin films 1985
35 8 p. 336-
1 p.
article
96 Ion beam exposure characteristics of resists: Experimental results 1985
35 8 p. 338-
1 p.
article
97 Ion-beam-induced metastable Pt2Si3 phase. III. Structure and diffusion in amorphous Pt2Si3 1985
35 8 p. 339-
1 p.
article
98 Ion-beam-induced topography and surface diffusion 1985
35 8 p. 331-
1 p.
article
99 Ion beam joining technique 1985
35 8 p. 343-
1 p.
article
100 Ion extraction from a plasma through a conical orifice 1985
35 8 p. 345-
1 p.
article
101 Ion-extraction performance of the circular magnetic-multipole bucket ion source applied for the neutral beam injection system of the Heliotron E machine 1985
35 8 p. 345-
1 p.
article
102 Ion implanted metastable surface alloys in vanadium 1985
35 8 p. 343-
1 p.
article
103 Ion saturation current density and specific heat flux on a cynlinder probe immersed in a dense plasma 1985
35 8 p. 335-
1 p.
article
104 Ion-surface interactions during vapor phase crystal growth by sputtering, MBE, and plasma-enhanced CVD: Applications to semiconductors 1985
35 8 p. 346-
1 p.
article
105 Kinetics and mechanisms of chemical reactions in nonequilibrium-plasma etching of silicon and silicon compounds 1985
35 8 p. 343-
1 p.
article
106 Large cross-section pulsed TEA-CO2 interferometer for plasma diagnostics 1985
35 8 p. 334-
1 p.
article
107 Large grain CdTe thin films on SbBi alloy-coated Ta substrates 1985
35 8 p. 342-
1 p.
article
108 Large turbomolecular pumps for fusion research and high-energy physics 1985
35 8 p. 328-
1 p.
article
109 Laser beam power fade induced by system and atmospheric effects 1985
35 8 p. 336-
1 p.
article
110 Laser-generated electron emission from surfaces: Effect of the pulse shape on temperature and transient phenomena 1985
35 8 p. 327-
1 p.
article
111 Laser magnetic resonance of metastable krypton and xenon atoms 1985
35 8 p. 332-
1 p.
article
112 Level's population and Kumakhov radiation for planar-channeled MEV electrons 1985
35 8 p. 335-
1 p.
article
113 Long term impurity deposition on the first wall of doublet III 1985
35 8 p. 337-
1 p.
article
114 Masked ion-beam litography: A feasibility demonstration for submicrometer device fabrication 1985
35 8 p. 336-
1 p.
article
115 Measurement of the ionisation and attachment coefficients in SF6 and air mixtures 1985
35 8 p. 334-
1 p.
article
116 Measurements of the magnification behaviour of some three-element electrostatic lenses 1985
35 8 p. 344-
1 p.
article
117 Methods of pumping speed and gas release measurement in ionization gauge heads—A review 1985
35 8 p. 329-
1 p.
article
118 Modelling ion beam milling 1985
35 8 p. 342-
1 p.
article
119 Model of bias sputtering in a dc-triode configuration applied to the production of Pd films 1985
35 8 p. 331-
1 p.
article
120 Motional side-band resonances in the microwave spectrum of stored ions 1985
35 8 p. 333-
1 p.
article
121 Neutral particle diagnostics for ohmically and auxiliary heated tokamaks 1985
35 8 p. 333-
1 p.
article
122 New operation mode of a microchannel plate for the detection of low-energy positive ions 1985
35 8 p. 328-
1 p.
article
123 New technique for measuring win velocity 1985
35 8 p. 335-
1 p.
article
124 NiSi formation at the silicide/Si interface on the NiPt/Si system 1985
35 8 p. 341-
1 p.
article
125 NMR study of magnetic doped semiconducting (SnTe)100−x (MnTe) x compounds 1985
35 8 p. 334-
1 p.
article
126 On gaseous sodium halide dimers 1985
35 8 p. 333-
1 p.
article
127 On magnetic shielding in hydrogen masers 1985
35 8 p. 328-
1 p.
article
128 On the determination of particle concentrations in multitemperature plasmas 1985
35 8 p. 333-
1 p.
article
129 Operational aspects of a gallium phosphide source of P2 vapor in molecular beam epitaxy 1985
35 8 p. 336-
1 p.
article
130 Phase transitions in compound semiconductor films triggered by laser irradiation 1985
35 8 p. 342-
1 p.
article
131 Photoluminescence of undoped In0.53 Ga0.47As/InP grown by the vapor phase epitaxy technique 1985
35 8 p. 341-
1 p.
article
132 Plasma-enhanced chemical vapor deposited SiO2/InP interface 1985
35 8 p. 337-
1 p.
article
133 Plasma expulsion from the plasma jet igniter 1985
35 8 p. 344-
1 p.
article
134 Plasma kinetic effects of nitrogen and hydrogen addition to carbon monoxide laser discharges 1985
35 8 p. 334-
1 p.
article
135 Pressure concentrations due to plastic deformation of thin films or gaskets between anvils 1985
35 8 p. 332-
1 p.
article
136 Problems in monitoring partial pressures in industrial vacuum plant 1985
35 8 p. 329-
1 p.
article
137 Pulsed laser heating of silicon: The coupling of optical absorption and thermal conduction during irradiation 1985
35 8 p. 340-
1 p.
article
138 Pulse-laser-induced supersaturation of indium and antimony in germanium 1985
35 8 p. 339-
1 p.
article
139 Reactions of atomic hydrogen in the deposition of hydrogenated amorphous silicon by glow discharge and reactive sputtering 1985
35 8 p. 331-
1 p.
article
140 Reactive ion etching of aluminium using SiCl4 1985
35 8 p. 331-
1 p.
article
141 Recent developments in cryopumping 1985
35 8 p. 328-
1 p.
article
142 Reducing the grain size of polycrystalline lead films by the use of nucleants 1985
35 8 p. 341-
1 p.
article
143 Reduction of the impurity concentration of an intense hydrogen ion beam 1985
35 8 p. 345-
1 p.
article
144 Resonant contributions to the cross section for electron stimulated desorption of neutral particles from adsorbates 1985
35 8 p. 333-
1 p.
article
145 RIE of SiO2 in doped and undoped fluorocarbon plasmas 1985
35 8 p. 332-
1 p.
article
146 Scattered electron counting system for nozzle beam studies of small clusters 1985
35 8 p. 332-
1 p.
article
147 Si incorporation in Al x Ga1−x As grown by molecular beam epitaxy 1985
35 8 p. 342-
1 p.
article
148 Similarity in interactions between metal-semiconductor and metal-metal interfaces 1985
35 8 p. 342-
1 p.
article
149 Simulation of high-voltage breakdown in the post-arc column 1985
35 8 p. 334-
1 p.
article
150 Simulation of plasma-assisted etching processed by ion-beam techniques 1985
35 8 p. 336-
1 p.
article
151 Specimen manipulators for high resolution in ultra-high vacuum 1985
35 8 p. 329-
1 p.
article
152 Spinning rotor vacuum gauges 1985
35 8 p. 329-
1 p.
article
153 Stability of glow discharge 1985
35 8 p. 332-
1 p.
article
154 Stoichiometry determination of reactively sputtered titanium-silicide 1985
35 8 p. 332-
1 p.
article
155 Stopping ratios for 30–330 keV ions with 1 ⩽Z 1⩽5 1985
35 8 p. 333-
1 p.
article
156 Structural studies of Schottky barrier formation by means of surface EXAFS: Pd and AG on Si(111) 7 × 7 1985
35 8 p. 346-
1 p.
article
157 Structural study of alloyed gold metallization contacts on InGaAsP/InP layers 1985
35 8 p. 339-
1 p.
article
158 Studies of a glow discharge electron beam 1985
35 8 p. 344-
1 p.
article
159 Studies of current-voltage characteristics of antimony oxide films 1985
35 8 p. 343-
1 p.
article
160 Surface composition of a tin lead alloy 1985
35 8 p. 345-
1 p.
article
161 System related impurity incorporation during the growth of gallium arsenide by molecular beam epitaxy 1985
35 8 p. 343-
1 p.
article
162 Techniques for the correction of topographical effects in scanning Auger electron microscopy 1985
35 8 p. 345-
1 p.
article
163 Technology and applications of broad-beam ion sources used in sputtering. Part I. Ion source technology 1985
35 8 p. 343-
1 p.
article
164 Tellurium and iodine in silicon part II: Hall effect and resistivity measurements on ion implanted silicon 1985
35 8 p. 335-
1 p.
article
165 Testing of a field electron energy analyser 1985
35 8 p. 344-
1 p.
article
166 The behavior of boron (also arsenic) in bilayers of polycrystalline silicon and tungsten disilicide 1985
35 8 p. 339-
1 p.
article
167 The behaviour of uranium oxides in low partial pressures of O2 Studied using X-ray photoelectron spectroscopy 1985
35 8 p. 346-
1 p.
article
168 The dynamics of imploding argon plasmas 1985
35 8 p. 332-
1 p.
article
169 The effect of implantation on explosively crystallized a-Si 1985
35 8 p. 340-
1 p.
article
170 The effect of the atomic incident angle upon the microstructure of thick beryllium deposits produced by physical vapor deposition 1985
35 8 p. 330-
1 p.
article
171 The effect of the inlet valve on the ultimate vacua above integrated pumping groups 1985
35 8 p. 329-
1 p.
article
172 The electrical resistivity of thin metal films with unlike surfaces 1985
35 8 p. 329-
1 p.
article
173 The erosion energy efficiency of sputtering 1985
35 8 p. 331-
1 p.
article
174 The existence of an electron shock structure in the electrical breakdown of nitrogen 1985
35 8 p. 332-
1 p.
article
175 The Ferranti oscillogyro: a miniature vacuum system 1985
35 8 p. 328-
1 p.
article
176 The growth of a GaP epilayer on Si substrates by metallorganic CVD 1985
35 8 p. 342-
1 p.
article
177 The growth of Cd x Hg1−x Te using organometallics 1985
35 8 p. 337-
1 p.
article
178 The influence of charge transfer on ion probe measurements of laser-produced plasmas 1985
35 8 p. 335-
1 p.
article
179 The mechanism of the enhancement in divacancy production by oxygen during electron irradiation of silicon. I. Experimental 1985
35 8 p. 340-
1 p.
article
180 The N-P final state interaction in the 2H(d,np)2H reaction at 12 MeV 1985
35 8 p. 334-
1 p.
article
181 Theoretical and experimental study of high fluence germanium implantation into silicon. Contribution of atomic mixing 1985
35 8 p. 343-
1 p.
article
182 Theory of hydrogen chemisorption on ferromagnets 1985
35 8 p. 338-
1 p.
article
183 The preparation and characterization of transition metal nitride films 1985
35 8 p. 345-
1 p.
article
184 The ratio of the single and double scattering intensities in ion scattering spectroscopy as a quantitative measure of surface structures 1985
35 8 p. 345-
1 p.
article
185 The relation between the conductance of an elbow and the angle between the tubes 1985
35 8 p. 327-
1 p.
article
186 The relationship between vacuum and atomic collisions in solids 1985
35 8 p. 345-
1 p.
article
187 Thermal removal of surface carbon from GaAs substrate used in molecular beam epitaxy 1985
35 8 p. 342-
1 p.
article
188 The velocity dependency of fast heavy-ion induced desorption of biomolecules 1985
35 8 p. 336-
1 p.
article
189 Two-dimensional fluid simultations of non-uniformly iradiated targets for inertial confinement fusion 1985
35 8 p. 335-
1 p.
article
190 uv laser triggering of high-voltage gas switches 1985
35 8 p. 328-
1 p.
article
191 Vacuum deposition of high quality metal films on porous substrates 1985
35 8 p. 330-
1 p.
article
192 Vibrational temperature in a weakly ionised steady-state nitrogen discharge plasma 1985
35 8 p. 334-
1 p.
article
                             192 results found
 
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